Central CS202-4M-2 4.0 amp scr 200 thru 800 volt Datasheet

Central
CS202-4B-2
CS202-4D-2
CS202-4M-2
CS202-4N-2
TM
Semiconductor Corp.
4.0 AMP SCR
200 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS202-4B-2
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
TO-202-2 THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CS202
-4B-2
CS202
-4D-2
200
400
CS202
-4M-2
CS202
-4N-2 UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=85°C)
Peak One Cycle Surge (t=10ms)
IT(RMS)
4.0
A
ITSM
30
A
I2t Value for Fusing (t=10ms)
I 2t
4.5
A2s
Peak Gate Power (tp=20µs)
PGM
PG (AV)
3.0
W
0.2
W
Average Gate Power Dissipation
Peak Gate Current (tp=20µs)
Critical Rate of Rise of On-State Current
Storage Temperature
IGM
di/dt
600
800
V
1.2
A
50
A/µs
Junction Temperature
Tstg
TJ
Thermal Resistance
ΘJA
80
°C/W
Thermal Resistance
ΘJC
7.5
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM, IRRM
IDRM, IRRM
IGT
Rated VDRM, VRRM, RGK=1KΩ
Rated VDRM, VDRM, RGK=1KΩ, TC=125°C
VD=12V, RL =10Ω
IH
VGT
VTM
dv/dt
20
-40 to +150
°C
-40 to +125
°C
TYP
MAX
UNITS
10
µA
200
µA
38
200
µA
IT=50mA, RGK=1KΩ
VD=12V, RL =10Ω
0.25
2.0
mA
0.55
0.8
V
ITM=8.0A, tp=380µs
VD=2 /3 VDRM, RGK=1KΩ, TC=125°C
1.6
1.8
10
V
V/µs
R1 (14-September 2004)
Central
TM
CS202-4B-2
CS202-4D-2
CS202-4M-2
CS202-4N-2
Semiconductor Corp.
4.0 AMP SCR
200 THRU 800 VOLTS
TO-202-2 THYRISTOR CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE
2) ANODE
3) GATE
NOTE: TAB IS COMMON
TO PIN 2 (ANODE)
MARKING CODE:
FULL PART NUMBER
SYMBOL
A
B
C
D
E
F
G
H
J
K
L
M
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.057 0.061 1.45
1.55
0.019 0.021 0.49
0.52
0.175 0.180 4.44
4.56
0.376 0.388 9.55
9.85
0.350
8.89
0.070
1.78
0.035 0.043 0.90
1.10
0.023 0.028 0.59
0.71
0.098 0.102 2.49
2.59
0.280 0.301 7.12
7.65
0.406 0.425 10.30 10.80
0.024 0.059 0.60
1.50
TO-202-2 Thyristor (REV: R0)
R1 (14-September 2004)
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