Central CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 TM Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER TO-202-2 THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CS202 -4B-2 CS202 -4D-2 200 400 CS202 -4M-2 CS202 -4N-2 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM RMS On-State Current (TC=85°C) Peak One Cycle Surge (t=10ms) IT(RMS) 4.0 A ITSM 30 A I2t Value for Fusing (t=10ms) I 2t 4.5 A2s Peak Gate Power (tp=20µs) PGM PG (AV) 3.0 W 0.2 W Average Gate Power Dissipation Peak Gate Current (tp=20µs) Critical Rate of Rise of On-State Current Storage Temperature IGM di/dt 600 800 V 1.2 A 50 A/µs Junction Temperature Tstg TJ Thermal Resistance ΘJA 80 °C/W Thermal Resistance ΘJC 7.5 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT Rated VDRM, VRRM, RGK=1KΩ Rated VDRM, VDRM, RGK=1KΩ, TC=125°C VD=12V, RL =10Ω IH VGT VTM dv/dt 20 -40 to +150 °C -40 to +125 °C TYP MAX UNITS 10 µA 200 µA 38 200 µA IT=50mA, RGK=1KΩ VD=12V, RL =10Ω 0.25 2.0 mA 0.55 0.8 V ITM=8.0A, tp=380µs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 1.6 1.8 10 V V/µs R1 (14-September 2004) Central TM CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS TO-202-2 THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE 3) GATE NOTE: TAB IS COMMON TO PIN 2 (ANODE) MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.057 0.061 1.45 1.55 0.019 0.021 0.49 0.52 0.175 0.180 4.44 4.56 0.376 0.388 9.55 9.85 0.350 8.89 0.070 1.78 0.035 0.043 0.90 1.10 0.023 0.028 0.59 0.71 0.098 0.102 2.49 2.59 0.280 0.301 7.12 7.65 0.406 0.425 10.30 10.80 0.024 0.059 0.60 1.50 TO-202-2 Thyristor (REV: R0) R1 (14-September 2004)