SMD Ultra Fast Recovery Rectifier COMCHIP www.comchip.com.tw CURB201 Thru CURB207 Reverse Voltage: 50 - 1000 Volts Forward Current: 2.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Fast recovery time: 50 - 75 nS Low leakage current SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.155(3.94) 0.130(3.30) 0.185(4.70) 0.160(4.06) Mechanical data 0.012(0.31) 0.006(0.15) Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.093 gram 0.096(2.44) 0.083(2.13) 0.050(1.27) 0.030(0.76) 0.008(0.20) 0.203(0.10) 0.220(5.59) 0.200(5.08) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Symbol CURB 201 CURB 202 CURB 203 CURB 204 CURB 205 CURB 206 Max. Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Max. DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V V RMS 35 70 140 280 420 560 700 V Parameter Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) CURB 207 Unit I FSM 60 A Max. Average Forward Current Io 2.0 A Max. Instantaneous Forward Current at 2.0 A VF Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C IR 1.3 1.0 50 75 V nS 5.0 100 uA 20 C/W C Max. Thermal Resistance (Note 1) R Operating Junction Temperature Tj -55 to +150 Storage Temperature T STG -55 to +150 JL 1.7 C Note 1: Thermal resistance from junction to lead, 8.0x8.0mm square (0.13 mm thick) land areas. MDS0210014B Page 1 SMD Ultra Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CURB201 Thru CURB207) Fig.2 - Forward Characteristics Fig. 1 - Reverse Characteristics 10 Tj=25 C Pulse width 300uS 4% duty cycle Tj=125 C Forward current ( A ) Reverse Current ( uA ) 1000 100 10 Tj=25 C 1.0 1.0 CURB201-203 0.1 CURB204 0. 01 CURB205-207 0.1 0 20 40 60 80 100 120 0.001 140 0 0.2 0.4 1.0 1.2 1.4 1.6 1.8 Fig. 5 - Non Repetitive Forward Surge Current Fig. 3 - Junction Capacitance Peak Surge Forward Current ( A ) 200 Junction Capacitance (pF) 0.8 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Tj=25 C f=1.0MHz Vsig=50mV p-p 100 0.6 40 20 10 4 60 8.3mS Single Half Sine Wave JEDEC methode 50 40 30 Tj=25 C 20 10 2 0 1 0.1 1.0 10 100 1 5 10 50 1 00 Number of Cycles at 60Hz Reverse Voltage (V) Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 2.7 trr 10W NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE Average Forward Current ( A ) 50W NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 2.4 2.0 1.6 1.2 0.8 Single Phase Half Wave 60Hz 0.4 0 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm MDS0210014B Page 2