CV110-3A The Communications Edge TM Cellular-band High Linearity Downconverter IF THRU IF IN GND GND 26 GND RF IN 27 25 24 23 22 GND 2 21 IF OUT IF Amp 20 GND RF Amp N/C 3 19 N/C IF Feedthru Path GND 4 18 GND LO Driver Amp IF THRU 5 GND 6 17 BIAS 16 GND RF/IF 9 10 11 12 13 14 LO OUT GND Typical applications include frequency downconversion used in CDMA/GSM/TDMA, CDMA2000, W-CDMA, and EDGE 2.5G and 3G mobile base transceiver stations for cellular frequency bands. 15 LO IN LO 8 GND RF/IF 7 MIXLO Functionality includes RF amplification, frequency conversion and IF amplification, while an integrated LO driver amplifier powers the passive mixer. The MCM is implemented with reliable and mature GaAs MESFET and InGaP HBT technology. 28 RF OUT 1 GND RF: 800 – 960 MHz IF: 200 – 350 MHz +37 dBm Output IP3 +20 dBm Output P1dB 5 dB Noise Figure +5V Single supply operation Pb-free 6mm 28-pin QFN package High-side LO configuration Common footprint with other PCS/UMTS versions The CV110-3A is a high linearity downconverter designed to meet the demanding issues for performance, functionality, and cost goals of current and next generation mobile infrastructure. It provides high dynamic range performance in a low profile surfacemount leadless package that measures 6 x 6 mm square. GND • • • • • • • • • Functional Diagram N/C • High dynamic range downconverter with integrated LO, IF, & RF amps Product Description GND Product Features Product Information Specifications (1) Parameters RF Frequency Range LO Frequency Range IF Center Frequency Range % Bandwidth around IF center frequency IF Test Frequency SSB Conversion Gain Gain Drift over Temp (-40 to 85 °C) Output IP3 Output IP2 Output 1dB Compression Point Noise Figure LO Input Drive Level LO-RF Isolation LO-IF Isolation Return Loss: RF Port Return Loss: LO Port Return Loss: IF Port Operating Supply Voltage Supply Current FIT Rating Junction Temperature Units MHz MHz MHz % MHz dB dB dBm dBm dBm dB dBm dB dB dB dB dB V mA failures /1E9 hrs °C Min -2.5 +4.9 290 Typ 800 – 960 1000 – 1310 200 – 350 ±7.5 240 22 ±1.5 +37 +45 +20 5 0 60 40 15 10 15 +5 360 Max Comments See note 2 See note 3 Temp = 25 °C Referenced to +25 °C See note 4 See note 4 See note 5 +2.5 PLO = 0 dBm PLO = 0 dBm +5.1 480 72.1 160 @ 70o C ambient, 90% confidence See note 6 1. Specifications when using the application specific circuit (shown on page 3) with a low side LO = 0 dBm in a downconverting application over the operating case temperature range. 2. IF matching components affect the center IF frequency. Proper component values for other IF center frequencies than shown can be provided by emailing to [email protected]. 3. The IF bandwidth of the converter is defined as 15% around any center frequency in its operating IF frequency range. The bandwidth is determined with external components. Specifications are valid around the total ±7.5% bandwidth. ie. with a center frequency of 240 MHz, the specifications are valid from 240 ± 18 MHz. 4. Assumes the supply voltage = +5 V. OIP3 is measured with Δf = 1 MHz with IFout = 5 dBm / tone. 5. Assumes LO injection noise is filtered at the thermal noise floor, -174 dBm/Hz, at the RF, IF, and Image frequencies. 6. The maximum junction temperature ensures a minimum MTTF rating of 1 million hours of usage. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Voltage Junction Temperature RF Input (continuous) Rating -40 to +85 °C -55 to +125 °C +6 V +220 °C +2 dBm Ordering Information Part No. Description Cellular-band High Linearity Downconverter CV110-3AF (lead-free/RoHS-compliant 6x6mm QFN package) CV110-3APCB240 Fully Assembled Eval. Board, IF = 240MHz Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 1 of 4 March 2006 CV110-3A The Communications Edge TM Cellular-band High Linearity Downconverter Product Information GND IF IN GND 27 GND RF IN 28 IF THRU GND Device Architecture / Application Circuit Information 26 25 24 23 22 RF OUT 1 GND 2 IF Amp 20 GND RF Amp N/C 3 Stage 19 N/C IF Feedthru Path GND 4 18 GND LO Driver Amp IF THRU 5 GND 6 17 BIAS 16 GND RF/IF 15 LO IN 8 9 10 11 12 13 14 N/C GND MIXLO GND LO OUT GND LO GND RF/IF 7 Typical Downconverter Performance Chain Analysis 21 IF OUT RF Amp Matching RF Amp Bias RF Amplifier RF Filter MMIC Mixer IF Amplifier CV110-3A Gain (dB) Output P1dB (dBm) Output IP3 (dBm) NF (dB) 13.5 21 40.0 3.5 -1.5 ----1.5 -9.0 8 23.0 9.8 19.0 22 39.1 2.5 Cumulative Performance IF Amp Matching Current (mA) 150 --60 150 360 Cumulative Performance Output Output NF P1dB IP3 (dB) (dBm) (dBm) 13.5 21.0 40.0 3.5 12.0 19.5 38.5 3.5 3.0 6.1 22.1 4.5 22.0 20.3 37.0 5.0 22.0 20.3 37.0 5.0 Gain (dB) IF Amp Bias RF Bandpass Filter / Attenuator Pad Printed Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness LO Amp Bias LO Amp Bias RF / IF Diplexer CV110-3A: The application circuit can be broken up into four main functions as denoted in the colored dotted areas above: RF/IF diplexing (purple), amplifier matching (green), filtering (red), and dc biasing (blue). There are various placeholders for chip components in the circuit schematic so that a common PCB can be used for all WJ single-branch converters. Additional placeholders for other optional functions such as filtering are also included. RF / IF Amplifier Matching: The RF amplifier requires a shunt matching element for optimal gain and input return loss performance. The IF amplifier requires matching elements to optimize the performance of the amplifier to the desired IF center frequency. Since IF bandwidths are typically on the order of 5 to 10%, a simple two element matching network, in the form of either a high-pass or low-pass filter structure, is sufficient to match the MMIC IF amplifier over these narrow bandwidths. Proper component values for other IF center frequencies can be provided by emailing to [email protected]. RF Bandpass Filtering: Bandpass filtering is recommended to reject the image frequencies and achieve the best noise figure performance with the downconverter. The bandpass filter, implemented with a SAW filter on the application circuit, allows for the suppression of noise from the image frequency. It is permissible to not use a filter and use a 2 dB pad with R6, R7, and R16 instead with slightly degraded noise figure performance. Standard WJ evaluation boards will have the 2 dB pad in place. External Diplexer: In a downconversion application, the incoming RF signal impinges on the switching elements of the mixer; the interaction with these switches produces a signal at the IF frequency. The two signals (RF and IF) are directed to the appropriate ports by the external diplexer. Pin 5 contains the IF signal and allows the signal to be transferred to pin 25 for the convenience of PCB layouts. DC biasing: DC bias must be provided for the RF, LO and IF amplifiers in the converter. R1 sets the operating current for the last stage of the LO amplifier and is chosen to optimize the mixer LO drive level. Proper RF chokes and bypass capacitors are chosen for proper amplifier biasing at the intended frequency of operation. The “+5 V” dc bias should be supplied directly from a voltage regulator. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 2 of 4 March 2006 CV110-3A The Communications Edge TM Cellular-band High Linearity Downconverter Product Information Downconverting Application Circuit: CV110-3APCB240 RF = 800 – 960 MHz, IF = 240 MHz PCB Layout Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness Bill of Materials Ref. Desig. R1 R2, R3, R4, R5, C2, L8 R6, R7 R8 R9, R10 R11 R16 C1, C3, C4, C5, C6 C7, C9, C16 C8, C10 C11, C12, C13, C18, C21, F1 C15 C14, C17 C18 L2 L3 L4 L5 L6 L7 L10 U1 Component 13 Ω chip resistor, size 0805 0 Ω chip resistor 470 Ω chip resistor 2.2 Ω chip resistor 200 Ω chip resistor 27 Ω chip resistor 10 Ω chip resistor 100 pF chip capacitor 0.018 μF chip capacitor 1000 pF chip capacitor Shown in silkscreen, but not used in actual circuit. 8.2 pF chip capacitor 3.9 pF chip capacitor 1.5 pF chip capacitor 18 nH chip inductor 120 nH chip inductor 220 nH chip inductor, size 0805 12 nH chip inductor 22 nH chip inductor 56 nH chip inductor 10 nH chip inductor CV110-3A WJ Converter All components are of size 0603 unless otherwise specified. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 3 of 4 March 2006 CV110-3A The Communications Edge TM Cellular-band High Linearity Downconverter Product Information CV110-3AF Mechanical Information This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum 245°C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Product Marking Outline Drawing The component will be lasermarked with a “CV110-3AF” product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class III Passes 500V to <1000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260°C convection reflow Standard: JEDEC Standard J-STD-020 Functional Pin Layout Mounting Configuration / Land Pattern Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION RF Amp Output GND N/C GND IF Feedthru Port GND Mixer RF / IF Port GND N/C or GND GND Mixer LO Input GND LO Amp Output GND Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION LO Amp Input GND LO Amp Bias GND N/C or GND GND IF Amp Output/Bias GND IF Amp Input GND IF Feedthru Port GND RF Amp Input GND Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 4 of 4 March 2006