CYTA44D Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA44D type consists of two (2) isolated NPN high voltage silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERmini™ device is ideal for high voltage applications. MARKING CODE: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO VCEO 450 UNITS V 400 V VEBO 6.0 V Collector Current IC 300 mA Power Dissipation PD 2.0 W TJ,Tstg -65 to +150 °C ΘJA 62.5 °C/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C SYMBOL TEST CONDITIONS ICBO VCB=400V ICES VCE=400V IEBO VBE=4.0V BVCBO IC=100µA BVCES IC=100µA BVCEO IC=1.0mA BVEBO IE=10µA VCE(SAT) IC=1.0mA, IB=0.1mA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA hFE VCE=10V, IC=50mA hFE VCE=10V, IC=100mA fT VCE=10V, IC=10mA, f=10MHz Cob VCB=20V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz unless otherwise noted) MIN MAX 100 500 100 450 450 400 6.0 0.40 0.50 0.75 0.75 40 50 200 45 20 20 7.0 130 UNITS nA nA nA V V V V V V V V MHz pF pF R1 (11-August 2005) Central TM Semiconductor Corp. CYTA44D SURFACE MOUNT DUAL, ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS SOT-228 CASE - MECHANICAL OUTLINE LEAD CODE: 1) COLLECTOR 2) COLLECTOR 3) COLLECTOR 4) COLLECTOR 5) EMITTER Q2 6) BASE Q2 7) EMITTER Q1 8) BASE Q1 Q1 Q1 Q2 Q2 MARKING CODE: FULL PART NUMBER R1 (11-August 2005)