STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET™ II Power MOSFET General features Type VDSSS RDS(on) ID STD100NH02L STD100NH02L-1 24V 24V <0.0048Ω <0.0048Ω 60A(1) 60A(1) 3 3 2 1 1. Value limited by wire bonding ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device DPAK 1 IPAK Internal schematic diagram Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. Applications ■ Switching application Order codes Part number Marking Package Packaging STD100NH02LT4 D100NH02L DPAK Tape & reel STD100NH02L-1 D100NH02L IPAK Tube December 2006 Rev 11 1/16 www.st.com 16 Contents STD100NH02L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ................................................ 8 STD100NH02L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit 30 V Drain-source voltage (VGS = 0) 24 V Drain-gate voltage (RGS = 20KΩ) 24 V ± 20 V Vspike (1) Drain-source voltage rating VDS VDGR VGS Drain-source voltage ID (2) Drain current (continuous) at TC = 25°C 60 A ID (2) Drain current (continuous) at TC=100°C 60 A Drain current (pulsed) 240 A Total dissipation at TC = 25°C 100 W Derating factor 0.67 W/°C Single pulse avalanche energy 800 mJ -55 to 175 °C Value Unit IDM (3) PTOT EAS (4) Tstg TJ Storage temperature Max. operating junction temperature 1. Garanted when external Rg = 4.7 Ω and tf < tfmax. 2. Value limited by wire bonding. 3. Pulse width limited by safe operating area 4. Starting TJ = 25 oC, ID = 30A, VDD = 15V Table 2. Symbol Thermal data Parameter RthJC Thermal resistance junction-case Max 1.5 °C/W RthJA Thermal resistance junction-ambient Max 100 °C/W Tl Maximum lead temperature for soldering purpose 275 °C 3/16 Electrical characteristics 2 STD100NH02L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 25mA, VGS = 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Max. 24 V VDS = 20, TC = 125°C 1 1 10 µA µA ±100 nA 1.8 V 0.0042 0.0048 0.005 0.009 VGS = 5V, ID = 15A Unit Ω Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit Forward transconductance VDS = 10 V, ID = 30A 50 S Input capacitance Output capacitance Reverse transfer capacitance VDS = 15V, f = 1 MHz, VGS = 0 3940 1020 110 pF pF pF Total gate charge Gate-source charge Gate-drain charge VGS = 10V 62 12 8 VDD = 10V, ID = 30A 84 nC nC nC Qoss(2) Output charge VDS = 16V, VGS = 0V 24 nC Qgls(3) Third-quadrant gate charge VDS < 0V, VGS = 10V 56.5 nC Gate input resistance f = 1MHz gate DC Bias = 0 Test signal level = 20mV Open drain 1.1 Ω RG 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter Appendix A 3. Gate charge for synchronous operation 4/16 Typ. VDS = 20 IDSS Table 4. Min. STD100NH02L Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Table 6. Symbol ISD ISDM VSD(1) trr Qrr IRRM Switching times Parameter Max. Unit 15 200 60 35 47 ns ns ns ns Typ. Max Unit Source-drain current 60 A Source-drain current (pulsed) 240 A 1.3 V Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. VDD = 10V, ID = 30A, RG = 4.7Ω, VGS = 10V Figure 13 on page 8 Typ. Source drain diode Parameter Test conditions Forward on voltage ISD = 30A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current di/dt = 100A/µs, VDD = 15V, TJ = 150°C ISD = 60A, Figure 15 on page 8 Min 47 58 2.5 ns µC A 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16 Electrical characteristics STD100NH02L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/16 STD100NH02L Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage vs temperature 7/16 Test circuit 3 STD100NH02L Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/16 STD100NH02L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/16 Package mechanical data STD100NH02L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 10/16 STD100NH02L Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 11/16 Packaging mechanical data 5 STD100NH02L Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12/16 inch MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 0.059 0.065 0.073 1.574 16.3 0.618 0.641 MAX. MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD100NH02L Buck converter - power losses estimation Appendix A Buck converter - power losses estimation Figure 18. Buck converter: power losses estimation The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. ● The low side (SW2) device requires: ● Very low RDS(on) to reduce conduction losses ● Small Qgls to reduce the gate charge losses ● Small Coss to reduce losses due to output capacitance ● Small Qrr to reduce losses on SW1 during its turn-on ● The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source ● voltage to avoid the cross conduction phenomenon; ● The high side (SW1) device requires: ● Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate ● Small Qg to have a faster commutation and to reduce gate charge losses ● Low RDS(on) to reduce the conduction losses. 13/16 Buck converter - power losses estimation Table 7. STD100NH02L Power losses calculation High side switching (SW1) Low side switch (SW2) R DS(on)SW1 * I 2L * δ R DS(on)SW2 * I 2L * (1 − δ ) Pconduction Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * Pswitching Recovery IL Ig Zero Voltage Switching (1) Not applicable Vin * Q rr(SW2) * f Conductio n Not applicable Vf(SW2) * I L * t deadtime * f Pgate(QG) Q g(SW1) * Vgg * f Q gls(SW2) * Vgg * f PQoss Vin * Q oss(SW1) * f Vin * Q oss(SW2) * f 2 2 Pdiode 1. Dissipated by SW1 during turn-on Table 8. Paramiters meaning Parameter d Duty-cycle Qgsth Post threshold gate charge Qgls Third quadrant gate charge Pconduction Pswitching 14/16 Meaning On state losses On-off transition losses Pdiode Conduction and reverse recovery diode losses Pgate Gate drive losses PQoss Output capacitance losses STD100NH02L 6 Revision history Revision history Table 9. Revision history Date Revision Changes 09-Sep-2004 9 Complete version 08-Aug-2006 10 The document has been reformatted, updated SOA Figure 1. 18-Dev-2006 11 Typo mistake on Table 3. 15/16 STD100NH02L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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