i, Line. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. D40E Series NPN POWER TRANSISTORS 30 - 80 VOLTS 2 AMP, 8 WATTS COMPLEMENTARY TO THE D41E SERIES D40E series are power transistors designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operati ng at frequencies from DC to greater than 0.1 MH;:; series, shunt and switching regulators; low and high frequency inverters/ converters; and many others. CASE STYLE TO-202 Features: • High free-air power dissipation • NPN complement to D41E PNP • Low collector saturation voltage (0.5V typ. @ 1.0A lc) • Excellent linearity • Fast switching DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0360-0410 TYPE TERM 1 TERM 2 TFBM 3 TAB TO-202 EMITTER BASE COUKTCR COLLECTOR maximum ratings (TA = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peakd) Base Current — Continuous Total Power Dissipation @ TA = 25°C @ Tc = 25°C Operating and Storage Junction Temperature Range SYMBOL D40E1 D40E5 D40E7 VCEO VCES VEBO 30 60 80 45 70 90 5 5 5 2 3 2 3 2 3 ic ICM IB PD - T • St9 UNITS Volts Volts Volts A 1 1 1.33 8 1.33 8 -55 to +1 50 -55 to +150 -55 to +150 75 15.6 75 75 °C/W 15.6 15.6 °C/W +260 +260 +260 °c 1 1.33 8 A Watts °C thermal characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: Ve" from Case for 5 Seconds (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2% Quality Semi-Conductors R&JA RSJC _ L electrical Characteristics (Tc = 25° C) (unless otherwise specified) L CHARACTERISTIC SYMBOL MIN TYP MAX UNIT vCEO(sus) 30 60 80 — — ICES — — 0.1 //A IEBO — — 0.1 A,A off characteristics*1* Collector-Emitter Sustaining Voltage D40E1 D40E5 D40E7 (lc = 10mA) Collector Cutoff Current (VCE = Rated VCES> Emitter Cutoff Current (VEB = 5V) Volts second breakdown FBSOA Second Breakdown with Base Forward Biased SEE FIGURE 1 on characteristics DC Current Gain (lc = 100mA, VCE = 2V) OC = 1A, VCE = 2V) Collector-Emitter Saturation Voltage (IC = 1-OA, IB = 0.1A) Base-Emitter Saturation Voltage (lc = 1.0mA, IB = 0.1 A) hFE hFE 50 10 — — — VcE(sat) — — 1.0 Volts vBE(sat) — — 1.3 Volts CCBO — 9 — PF *T — 230 — MHz nS dynamic characteristics Collector Capacitance (VCB = 10V, f = 1MHz) Current-Gain — Bandwidth Product (lc = 100mA, VCE = 10V) switching characteristics Resistive Load Delay Time + Rise Time lc = 1A, IB1 = lB2 = 0.1A td + V — 130 — Storage Time Fall Time Vcc = 30V, tp = 25 Msec ts — 400 — tf 170 (1) Pulse Test PW = 300ms Duty Cycle < 2%. 1 PEAK • CURRENT ^xTc^ MAX. POWER DIS SIP/ •c CASE 2 ro N PULSED OPI RAT w . DUTY CYCLE < •on CURRE NT"^ 500 T j- ISC PULSE IA \> V •^ V ^ s v SK — —-' . ^ lOmi PULSED D 'i.- —' Omt PULSE - \N^ •r. r- 1 T j - 2 5 •c ^« ^^> X T J—S 5'C ^ 100 ^V V\ \ D4OES 1 — |— O.IA MAX v< MAX E | D40E vc E - 2 V ^ M 30 El , D4OE * 10V ^ 100V V \ •\ \N ^V^\v - k ' EC MAX IV \ V. ^( 0.01 O.IO S I.O IC-AMPERES VCE FIG. 1 SAFE REGION OF OPERATION FIG. 2 TYPICAL HFE VS lc