'j.s.iis.ii <~>E.ml-(lona.uctoi iPtooud^i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 D41D Series PNP POWER TRANSISTORS -30 - -60 VOLTS -1 AMP, 6.25 WATTS COMPLEMENTARY TO THE D40D SERIES D41D is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others. CASE STYLE TO-202 Features: • • • • • DIMENSIONS ARE IN INCHES AND (MILLIMETERS) High free-air power dissipation PNP complement to D40D NPN Low collector saturation voltage (-0.5V typ. @ 1.0A lc) Excellent linearity Fast Switching 095-0106 413-2 H67) TYPE TERM 1 TERM 2 TERM 3 TAB T0202 EMIITES BASE COLLECTOR COLLECTOR maximum ratings (TA = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous PeakO) Base Current — Continuous Total Power Dissipation @ TA = 25° C @ TC = 25C Operating and Storage Junction Temperature Range SYMBOL D41D1.2 D41D4, 5 D41D7, 8 VCEO VCES VEBO ic 'CM IB PD -30 -45 -45 -60 UNITS Volts -5 -60 -5 -75 -5 Volts Volts -1 -1.5 -1 -1.5 -1 -1.5 A A Watts -.5 -.5 -.5 1.67 6.25 1.67 6.25 1.67 6.25 Tj.Tstg -55 to +150 -55 to +150 -5510+150 °C RftJA 75 20 75 20 °C/W R0JC 75 20 TL +260 +260 +260 thermal characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: Ve" from Case for 5 Seconds °c/w °c (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors electrical Characteristics (Tc = 25° C) (unless otherwise specified) CHARACTERISTIC SYMBOL MIN TYP MAX VCEO(SUS) -30 -45 -60 — — ICES — 'EBO — UNIT off characteristics'1' Collector-Emitter Sustaining Voltage D41D1.2 D41D4, 5 D41D7, 8 (lc = 10mA) Collector Cutoff Current ( VCE = Rated VCEO) Tc = 25° C (VCE = Rated VCES) TC = 1 50° c Emitter Cutoff Current (VEB = sv) Volts -0.1 -1 — M M -0.1 second breakdown FBSOA Second Breakdown with Base Forward Biased SEE FIGURE 7 on characteristics DC Current Gain (lc = 1 00mA, VCE = 2V) D41 D1 . 4, 7 D41 D2, 5, 8 D41 D1.4.7 D41D2 D41D5, 8 (IC = 1A, VCE = 2V) Collector-Emitter Saturation Voltage (1C = -500mA, IB = -50mA) D41 D1 , 2, 4, 5 D41D7, 8 Base-Emitter Saturation Voltage (lc = -500mA, IB = -50mA) hFE 50 120 10 20 10 VcE(sat) hFE — 150 360 — — — — 0.5 1.0 Volts vBE(sat) — — 1.5 Volts CCBO — 10 — PF fr — 150 — MHz td + V — 50 — nS ts tf — — 75 40 — dynamic characteristics Collector Capacitance (VCB = 10V, f = 1Mnz) Current-Gain — Bandwidth Product (lc = -20mA, VCE = -10V) switching characteristics Resistive Load Delay Time + Rise Time 1C = -1A. IB1 Storage Time Fall Time Vcc = -30V, t_ ip - 2 ^ = -0.1A — (1) Pulse Test PW = 300ms Duty Cycle < 2%. - T j - 1«' C •M^OI ^. _— • • -^J too *^* •^. 'r- •« t-». •1 '" ~™ —-^ j.-t»-e r „ M >t.» MO •\^ ^\ =5 •- M ysff" — I '— — j - I»'C m 1 •vnrc --f - ^ -^«, °"^^_ -» «^^ ^>^^ \ ^ *^ N J L\ ^ H -K> -»« -Xf \ s\ V>, N H ^ ^*^ -' ic-auicnn.cuM.T-.. -" -•• I c-cou«t» ««««-.. FIG. 1 FIG. 2 TYPICAL hpE VS. S -•'