DB2J309 Silicon epitaxial planar type Unit: mm For high speed switching circuits Features Short reverse recovery time trr Small reverse current IR Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C5 Packaging DB2J30900L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 100 mA Peak forward current IFM 200 mA Non-repetitive peak forward surge current *1 IFSM 1 A Tj 125 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +125 °C Reverse voltage Junction temperature 1: Cathode 2: Anode Panasonic JEITA Code SMini2-F5-B SC-90A Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit VF1 IF = 10 mA 0.44 VF2 IF = 100 mA 0.58 IR1 VR = 10 V 0.3 IR2 VR = 30 V 2.0 Terminal capacitance Ct VR = 10 V, f = 1 MHz 3.0 pF Reverse recovery time *1 trr IF = IR = 100 mA, Irr = 10 mA, RL = 100 W 1.3 ns Forward voltage Reverse current V mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2013 VR Ver. CED t IF trr 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse IF = 100 mA IR = 100 mA RL = 100 Ω t Irr = 10 mA 1 DB2J309 DB2J309_ IR-VR DB2J309_ IF-VF IF VF 1 DB2J309_Ct-VR IR VR Ct VR 20 Pulse test Ta = 25°C Ta = 125°C Reverse current IR (A) Forward current IF (A) 10−1 Ta = 125°C 10−2 100°C 100°C 85°C 10−4 −40°C 10−9 25°C 85°C 25°C 10−7 10−3 Terminal capacitance Ct (pF) 10−5 15 10 5 −40°C 10−5 0 0.2 0.4 Forward voltage VF (V) 0.6 10−11 0 10 20 30 Reverse voltage VR (V) Ver. CED 40 0 0 10 20 30 Reverse voltage VR (V) 2 DB2J309 SMini2-F5-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202