Z ibo Seno Electronic Engineering Co., Ltd. DB301 – DB307 3.0A GLASS PASSIVATED BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Surge Current Capability Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-O DB A C B D E G Mechanical Data ! H K L J M Case: DB , Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Case Weight: 1.0 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Dim Min Max A 6.20 6.50 B 6.80 8.40 C 7.24 8.70 D 0.20 0.38 E 8.12 8.80 G 2.15 3.40 H 1.30 - J 3.80 4.90 K 0.90 1.40 L 0.45 0.58 M 5.00 5.20 All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol DB 301 DB 302 DB 303 DB 304 DB 305 DB 306 DB 307 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 80 A Forward Voltage per element @IF = 3.0A VFM 1.1 V @TA = 25°C @TA = 125°C IRM 5.0 500 µA Cj 25 pF Typical Thermal Resistance per leg (Note 2) RθJA RθJL 40 15 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Average Rectified Output Current Peak Reverse Current At Rated DC Blocking Voltage @TA = 40°C Typical Junction Capacitance per element (Note 1) Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Mounted on PC board with 13mm2 copper pad. DB301 - DB307 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. DB301 – DB307 4.0 10 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 60 Hz Resistive or Inductive load 3.0 2.0 1.0 Tj = 25°C Pulse Width = 300µs 2% duty cycle 1.0 0.1 0.01 0 40 60 80 100 120 140 0.4 0.8 0.6 1.0 1.4 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) 100 Tj = 25°c f = 1.0 Mhz Vsig = 50 mV p-p Single half-sine-Wave (JEDEC M ethod) 100 CJ, CAPACITANCE (pF) IFSM , PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve 80 60 40 10 20 0 1 1 10 1 100 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) NUM BER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) 100 Tj = 125°C 10 1.0 Tj = 25°C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) DB301 - DB307 2 of 2 www.senocn.com Alldatasheet