DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-300-1C 3 AMP SILICON BRIDGE RECTIFIERS MECHANICAL SPECIFICATION FEATURES PRV Ratings from 50 to 1000 Volts ACTUAL SIZE SERIES DB300-DB310 DT DB306 Surge overload rating to 60 Amps peak Reliable low cost molded epoxy construction BH Ideal for printed circuit board applications LL UL RECOGNIZED - FILE #E124962 _ RoHS COMPLIANT + LD D1 MECHANICAL DATA Case: Molded Epoxy (UL Flammability Rating 94V-0) Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on top of case; positive lead at beveled corner Mounting Position: Any. Thru hole provided for #6 screw (NOTE 1) bdc/egfih jjkh fmldndlporq s tvu/wxdy }i~ zi{ | !" #%$& ' ()* +, -/. 0 12 354 476 8:9; <9=?>@ AAB CC D EF G H7I J NO PQ K7L M RS TU V WX YZ[ Z\]?^_ ^`a + D1 BL _ BL Weight: 0.13 Ounces (3.6 Grams) MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS k k ¡ ¢ £¥¤ ¦ ¥ § ¨ ©ª« § ¬ £¥¡ ¬ £¥¤®¥¥¡ ¡ ¬ £§ £ ¡ ¯© °k¤ PARAMETER (TEST CONDITIONS) SYMBOL Series Number Maximum DC Blocking Voltage V ¼½ Working Peak Reverse Voltage V ±³²i´ Maximum Peak Recurrent Reverse Voltage V µµ¶ V ·¸ ·¹dº» It RMS Reverse Voltage Thermal Energy (Rating for Fusing) t < 8.3mSec Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). Tc = 60 C @ T = 60 C (Note 2) Average Forward Rectified Current ! " @ T = 25 C (Note 3) UNITS Typical Junction Capacitance (Note 4) B C @ T = 25 C D E @T = 125 C Minimum Insulation Breakdown Voltage (Circuit to Case) VOLTS ú³ûýü³þ ÿ -. / AMPS SEC 01 2 AMPS # $$&% ')(+*$, °C 3 I V 465 Maximum Forward Voltage (Per Diode) at 1.5 Amps DC ë³ìîíï³ïñð³ò³òÚó7ô³ôöõ³÷³÷âø7ù³ù éê³ê7ê I T , T Junction Operating and Storage Temperature Range Maximum Reverse Current at Rated V @+A RATINGS r¾ ¿gÀrÁgÂrÃgÄrÅÇÆrÈÊÉrËÍÌrΠϳгÐÒѳÓÔÖճ׳ØÚÙ³Û³ÜÞݳ߳àâá7ã³äæåçè KML NOQP R6STU VWMX6YQKL NZ C7 I F+G V H IJ Junction to Ambient (Note 3) R8:9<; Typical Thermal Resistance Junction to Case (Note 2) R=:>? lMmonp6q+rts u viwx:y zi{:| } ~xi+ z} ¤M¥ ¦ §M¨©ª«¬ ¤® ¯ª¥ °± } y } x:Mz | +y xoxi:~{ z +{:| } ~:M~xiz } :| M xi|:+} & zz | | s viw| } ~:xi: z ~+x: : + u u z :} s u : + vy o} :&:y z s viw| } ~:xi: z ~+x:iwx:| ~ ¤¥ ¦ §²³ ´µª¶i³ · ¸ ¹ ºº»ª¶:³ ¼« ½i¾¾¬i¾ ¿ÀªM¿°ÀÁ¬ ¥ À:±Â ¿À °±¦ §½Ã s v s vi :| ~ ziu +<¡~+:y } ~| ¢ | M¢xiy z x M£xiy z [+\ ] ^_ abcc pF ` A VOLTS d C/W e f g hig e j k E13 DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. BRDB-300-2C 3 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB300 - DB310 Ê<Ë Peak Forward Surge Current (Amperes) Average Forward Current, Io (Amperes) 5 60Hz Resistive and Inductive Loads 4 Case, Tc 3 NOTE 1 2 Ambient, TA 1 0 0 50 Ä 100 ÎÏ Ð<Ñ NOTE 2 Ò<Ó Ô:Õ 150 Å ÆÇ È:É<É Temperature, C Number of Cycles at 60 Hz FIGURE 1. FORWARD CURRENT DERATING CURVE FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 50 Instantaneous Reverse Current, I (Microamperes) ßà Instantaneous Forward Current Amperes Ì<Í NOTE 3 1.0 0.1 10 1.0.1 0.1 .01 0.01 0.4 08 0.6 1.0 1.2 1.4 1.6 0 40 1.8 Percent of Rated Peak Reverse Voltage Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE FIGURE 4. TYPICAL REVERSE CHARACTERISTICS ó:ô<ô Capacitance, pF NOTES á+â NOTE 4 (1) Case Temperature, T With Bridge Mounted on 4" Sq. x 0.11" Thick (10.5cm Sq. x 0.3cm) Aluminum Plate ã â Ambient Temperature, T With Bridge Mounted on PC Board With 0.5" Sq. (12mm Sq.) Pads and Lead Length of 0.375" (9.5mm) éê è å á (2) T = 60 C ðñ ò ë î:ï ì:í<í Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE E14 å ä (3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle æ ç (4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p Ö ×Ø Ù Ú Ú Û Ü Ú Ý Þ Þ