DCR6430M22 Phase Control Thyristor DS6034-1 April 2011 (LN28245) KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 2200 V 6430 A 80000 A 1000 V/µs 250 A/µs * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR6430M22 DCR6430M20 DCR6430M18 Repetitive Peak Voltages VDRM and VRRM V 2200 2000 1800 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 400mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM +100V respectively (See Package Details for further information) Lower voltage grades available. ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR6430M22 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR6430M22 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 6430 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 10100 A Continuous (direct) on-state current - 9090 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 80.0 kA VR = 0 32.00 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.005 °C/W Rth(c-h) Thermal resistance – case to heatsink Double side cooled DC - 0.0015 °C/W Tvj Virtual junction temperature Blocking VDRM / VRRM - 125 °C Tstg Storage temperature range -40 140 °C Fm Clamping force 80 100 kN 2/9 www.dynexsemi.com DCR6430M22 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units - 400 mA 1000 - V/µs Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open dI/dt Rate of rise of on-state current From 67% VDRM to 5000A Repetitive 50Hz - 250 A/µs Gate source 30V, 10, Non-repetitive - 1000 A/µs 1.05 V tr < 0.5µs, Tj = 125°C VT VT(TO) rT tgd On-state voltage IT = 3000A, Tcase = 125°C Threshold voltage Tcase = 125°C - 0.87 V On-state slope resistance Tcase = 125°C - 0.061 m VD = 67% VDRM, gate source 30V, 10 - 3.0 µs - 500 µs IT = 2000A, tp = 1000us,Tj = 125°C, dI/dt =1.5A/µs, - 3000 µC - 75 A Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 100V, dI/dt = 1.5A/µs, dVDR/dt = 20V/µs linear to 67% VDRM QS Stored charge IRR Reverse recovery current IL Latching current Tj = 25°C, - 1 A IH Holding current Tj = 25°C, - 200 mA GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units 3 V VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C VGD Gate non-trigger voltage At 40% VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 300 mA IGD Gate non-trigger current At 40% VDRM, Tcase = 125°C TBD mA 3/9 www.dynexsemi.com DCR6430M22 SEMICONDUCTOR CURVES 10000 Instantaneous on-state current, IT - (A) 9000 8000 7000 VTM EQUATION 6000 VTM = A + Bln (IT) + C.IT+D.IT 5000 4000 3000 2000 Tj=25°C 1000 Tj=125°C 0 0.5 0.7 0.9 1.1 1.3 Instantaneous on-state voltage,VT - (V) Where A = 0.336497 B = 0.0633152 C = 0.0000346606 D = 0.00180628 These values are valid for Tj = 125°C 1.5 Fig.2 Maximum &minimum on-state characteristics 0.008 Double side cooled t i Rthjc t Rthi 1 e i 1 n Thermal Impedance Zth(j-c) (°C/W) 0.006 0.004 0.002 i τi (s) Rthi (°C/kW) 1 0.4069 3.359 2 0.0854 0.956 3 0.0118 0.481 4 0.003 0.224 0 0.001 0.01 0.1 Time ( s ) 1 10 100 Fig.3 Maximum (limit) transient thermal impedance – junction to case (°C/W) 4/9 www.dynexsemi.com DCR6430M22 SEMICONDUCTOR 15000 130 120 Mean power dissipation - (W) Maximum case temperature, Tcase - (°C) 110 12000 100 9000 6000 180 120 90 60 30 3000 0 0 80 70 60 50 40 30 180 120 90 60 30 20 10 0 1100 2200 3300 4400 5500 6600 Mean on-state current, IT(AV) - (A) 0 Fig.4 On-state power dissipation – sine wave 130 90 1100 2200 3300 4400 5500 Mean on-state current, IT(AV) - (A) 6600 Fig.5 Maximum permissible case temperature, double side cooled – sine wave 15000 120 Maximum case temperature, Tcase - (°C) 110 12000 Mean power dissipation - (W) 100 90 80 70 60 50 40 d.c. 180 120 90 60 30 30 20 10 0 9000 6000 d.c. 180 120 90 60 30 3000 0 0 1100 2200 3300 4400 5500 Mean on-state current, IT(AV) - (A) 6600 Fig.6 Maximum permissible case temperature, double side cooled – rectangular wave 0 1100 2200 3300 4400 5500 Mean on-state current, IT(AV) - (A) 6600 Fig.7 On-state power dissipation – rectangular wave 5/9 www.dynexsemi.com DCR6430M22 SEMICONDUCTOR 100.0 Conditons: Tcase=125°C VR=0 Pulse width = 10ms 90.0 40.00 35.00 80.0 30.00 70.0 I2t (MA2s) Surge current, ITSM - (KA) Conditons: Tcase=125°C VR=0 half-sine wave 60.0 25.00 50.0 20.00 40.0 15.00 30.0 20.0 10.00 1 10 Number of cycles 100 1 Fig.9 Single-cycle I t 24000 1500 Conditons: Tj=125°C IT=2000A VR=0 Conditons: Tj=125°C IT=2000A VR=0 1200 Reverse recovery current, IRR - (A) Stored charge, QS - (uC) 10 2 Fig.8 Multi-cycle surge current 20000 Pulse width, tp - (ms) 16000 12000 8000 4000 900 600 300 0 1 10 Rate of decay of on-state current, di/dt - (A/us) Fig.10 Stored charge vs di/dt 100 0 1 10 Rate of decay of on-state current, di/dt - (A/us) 100 Fig.11 Reverse recovery current vs di/dt 6/9 www.dynexsemi.com DCR6430M22 SEMICONDUCTOR 4.50 4.00 Gate trigger voltage, VGT - (V) 3.50 Upper limit 3.00 2.50 2.00 1.50 1.00 Lower limit 0.50 Tj=-40°C Tj=25°C Tj=125°C 0.00 0 50 100 150 200 250 300 350 400 450 500 Gate trigger current IGT, - (mA) Fig.12 Gate characteristics 12.0 PGM=20W Gate trigger voltage, VGT - (V) 10.0 8.0 6.0 A 4.0 A is Recommended Triggering Area. B is Unreliable Triggering Area. C is Recommended Gate Load Line. 2.0 0.0 B 0.0 C 1.0 2.0 3.0 4.0 Gate trigger current IGT, - (A) Fig.13 Gate characteristics 7/9 www.dynexsemi.com DCR6430M22 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Package outline type code: M Fig.14 Package outline 8/9 www.dynexsemi.com DCR6430M22 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 9/9 www.dynexsemi.com