DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 24 A IDM Tc = 25°C, pulse width limited by TJM 144 A IAR Tc = 25°C 21 A EAR Tc = 25°C 30 mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 1800 W 730 W 4.5 W RthJC 0.08 C/W RthJHS 0.20 C/W IS = 0 PDC PDHS Tc = 25°C Derate 4.0W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 4 ma SG1 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test ±100 nA 50 1 µA mA 0.45 Ω S +175 -55 Tstg Weight V 175 TJM TL 5.5 12 -55 TJ max. V 4.4 1.6mm (0.063 in) from case for 10 s ID25 = 24 A RDS(on) ≤ 0.45 Ω PDC = 1800W SG2 SD1 SD2 Features 1000 3.5 1000 V GATE TJ = 25°C unless otherwise specified typ. = DRAIN Characteristic Values min. VDSS +175 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages °C • Optimized for RF and high speed °C • Easy to mount—no insulators needed • High power density °C 300 °C 3 g switching at frequencies to 30MHz DE475-102N21A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. 0.3 Ω 5500 pF 190 pF 52 pF 46 pF 5 ns 5 ns 5 ns 8 ns 155 nC 33 nC 84 nC RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% min. Trr QRM max. IF = IS, -di/dt = 100A/µs, VR = 100V IRM typ. max. 21 A 144 A 1.5 V 200 ns 0.6 µC 8 A CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE475-102N21A RF Power MOSFET Fig. 2 Typical Transfer Characteristics VDS = 50V, ID = 12A Typical Output Characteristics PW = 15 µS 70 30 60 25 ID , Drain Currnet (A) ID , Drain Current (A) Fig. 1 50 40 30 20 20 Bottom 7V 6.5V 6V 5.5V 10 5 0 0 5 6 7 8 9 10 11 12 13 14 0 15 25 Fig. 3 50 75 100 125 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (V) Fig. 4 Gate Charge vs. Gate-to-Source Voltage VDS = 500V, ID = 12A Extended Typical Output Characteristics PW = 15 µS 100 16 Gate-to-Source Voltage (V) 7.5-15V 15 10 Top ID , Drain Currnet (A) 14 12 10 8 6 4 80 60 Bottom 9-15V 8.5V 8V 7.5V 7V 6.5V 6V 40 20 2 0 0 0 50 100 150 200 250 Fig. 5 VDS vs. Capacitance 10000 Ciss 1000 Coss 100 Crss 10 0 100 200 300 400 500 VDS Voltage (V) 0 25 50 75 100 VDS, Drain-to-Source Voltage (V) Gate Charge (nC) Capacitance (pF) Top 600 700 800 125 DE475-102N21A RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source DE475-102N21A RF Power MOSFET 102N21A DE-SERIES SPICE Model (Preliminary) The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de475-102n21a.html Net List: .SUBCKT 102N21A 10 20 30 * TERMINALS: D G S * 1000 Volt 21 Amp 0.45 ohm N-Channel Power MOSFET * REV.A 01-09-02 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.3 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 5.5N RD 4 1 0.45 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0247 Rev 6 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com