DG2016 New Product Vishay Siliconix High-Bandwidth, Low Voltage, Dual SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D Single Supply (1.8 V to 5.5 V) D Low On-Resistance - rON: 2.4 W D Crosstalk and Off Isolation: -81 dB @ 1 MHz D MSOP-10 Package D D D D D D D D D D D Reduced Power Consumption High Accuracy Reduce Board Space Low-Voltage Logic Compatible High Bandwidth Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Low-Voltage Data Acquisition ATE DESCRIPTION The DG2016 is a monolithic CMOS dual single-pole/double-throw (SPDT) analog switch. It is specifically designed for low-voltage, high bandwidth applications. The DG2016’s on-resistance (3 W @ 2.7 V), matching and flatness are guaranteed over the entire analog voltage range. Wide dynamic performance is achieved with better than –80 dB for both cross-talk and off-isolation at 1 MHz. Both SPDT’s operate with independent control logic, conduct equally well in both directions and block signals up to the power supply guaranteed. level when off. Break-before-make is With fast switching speeds, low on-resistance, high bandwidth, and low charge injection, the DG2016 is ideally suited for audio and video switching with high linearity. Built on Vishay Siliconix’s low voltage CMOS technology, the DG2016 contains an epitaxial layer which prevents latch-up. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION MSOP-10 TRUTH TABLE IN1 1 10 COM1 NO1 2 9 NC1 GND 3 8 V+ NO2 4 7 NC2 IN2 5 6 COM2 Top View Document Number: 72030 S-22312—Rev. A, 20-Jan-03 Logic NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range Package Part Number -40 to 85°C MSOP-10 DG2016DQ www.vishay.com 1 DG2016 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Power Dissipation (Packages)b MSOP-10c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/_C above 70_C SPECIFICATIONS (V+ = 3 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve - 40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatness rON Match Between Channels Switch Off Leakage Current f VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V INO, INC = 10 mA Room Full V+ = 2.7 V VCOM = 0 to V+, INO, INC = 10 mA Room V+ = 3.3 V, VNO, VNC = 1 V/3 V VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V 3.0 4.8 5.3 1.6 Room W 0.2 Room Full - 0.25 - 2.5 0.01 0.25 2.5 Room Full - 0.25 - 2.5 0.01 0.25 2.5 Room Full - 0.25 - 2.5 0.01 0.25 2.5 1.6 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 5 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON VNO or VNC = 2.0 V, RL = 50 W, W CL = 35 pF Turn-Off Time tOFF Room Full 28 53 59 Room Full 13 38 38 td VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF Full Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room 38 Off-Isolationd OIRR Room - 78 Crosstalkd XTALK Room - 82 CNO(off) Room 15 CNC(off) Room 15 Room 49 Room 45 Full 0.01 Break-Before-Make Time NO, NC Off Capacitanced Channel-On Capacitanced CNO(on) RL = 50 W W, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz CNC(on) ns 1 pC dB pF Power Supply Power Supply Current I+ VIN = 0 or V+ 1.0 mA Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com 2 Document Number: 72030 S-22312—Rev. A, 20-Jan-03 DG2016 New Product Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve - 40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatness rON Match Between Channels Switch Off Leakage Current VNO, VNC, VCOM rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA rON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA 2.4 Room 4.0 4.3 1.2 DrON Room INO(off), INC(off) Room Full - 0.25 - 2.5 0.01 0.25 2.5 Room Full - 0.25 - 2.5 0.01 0.25 2.5 Room Full - 0.25 - 2.5 0.01 0.25 2.5 2.0 ICOM(off) Channel-On Leakage Current Room Full ICOM(on) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V W 0.2 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.8 VIN = 0 or V+ Full 5 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF VNO or VNC = 3 V, RL = 50 W W, CL = 35 pF Break-Before-Make Time Charge Injectiond 48 52 Room Full 8 33 35 td VNO or VNC = 3 V, RL = 50 W, CL = 35 pF Full CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room 79 Room - 81 Room - 82 CNO(off) Room 14 CNC(off) Room 14 Room 48 Room 44 OIRR Crosstalkd XTALK Channel-On Capacitanced 23 QINJ Off-Isolationd Source-Off Capacitanced Room Full CNO(on) RL = 50 W W, CL = 5 pF, f = 1 MHz VIN = 0 or V+, f = 1 MHz CNC(on) ns 1 pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ 1.8 VIN = 0 or V+ Full 0.01 5.5 V 1.0 mA Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. Document Number: 72030 S-22312—Rev. A, 20-Jan-03 www.vishay.com 3 DG2016 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 5 8 T = 25_C IS = 10 mA 4 r ON - On-Resistance ( W ) r ON - On-Resistance ( W ) 7 6 5 4 V+ = 3.0 V, V+ = 5.0 V, 3 2 V+ = 3 V 85_C 25_C - 40_C 3 2 V+ = 5 V 85_C 1 25_C - 40_C 1 0 0 0 1 2 3 4 5 0 1 2 VCOM - Analog Voltage (V) Supply Current vs. Temperature 4 5 Supply Current vs. Input Switching Frequency 10000 10 mA V+ = 5 V 1 mA 1000 100 I+ - Supply Current (A) I+ - Supply Current (nA) 3 VCOM - Analog Voltage (V) V+ = 5 V VIN = 0 V V+ = 3 V VIN = 0 V 10 100 mA 10 mA 1 mA 100 nA 1 - 60 10 nA - 40 - 20 0 20 40 60 80 100 10 100 Temperature (_C) 1K 100 K 1M 10 M Input Switching Frequency (Hz) Leakage Current vs. Temperature Leakage vs. Analog Voltage 10000 100 V+ = 5 V 75 V+ = 5 V ICOM(off) 100 Leakage Current (pA) INO(off), IINC(off) 1000 Leakage Current (pA) 10 K ICOM(on) 10 50 ICOM(on) 25 ICOM(off) 0 INO(off), IINC(off) - 25 - 50 - 75 1 - 60 - 100 - 40 - 20 0 20 40 Temperature (_C) www.vishay.com 4 60 80 100 0 1 2 3 4 5 VCOM, VNO, VNC - Analog Voltage (V) Document Number: 72030 S-22312—Rev. A, 20-Jan-03 DG2016 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Insertion Loss, Off-Isolation Crosstalk vs. Frequency Switching Time vs. Temperature 60 10 RL = 50 W LOSS - 10 Loss, OIRR, X TALK (dB) t ON / t OFF - Switching Time (m s) 50 40 tON V+ = 3 V 30 tON V+ = 5 V 20 tOFF V+ = 3 V 10 - 30 - 50 XTALK OIRR V+ = 5 V RL = 50 W - 70 tOFF V+ = 5 V 0 - 60 - 90 - 40 - 20 0 20 40 60 80 100 1M 100 K 1G Frequency (Hz) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage 3.0 80 60 Q - Charge Injection (pC) 2.5 - Switching Threshold (V) 100 M 10 M Temperature (_C) 2.0 1.5 VT 1.0 40 20 V+ = 5 V 0 - 20 V+ = 3 V - 40 0.5 - 60 0.0 - 80 0 1 2 3 4 5 6 0 7 1 V+ - Supply Voltage (V) 2 3 4 5 VCOM - Analog Voltage (V) TEST CIRCUITS V+ Logic Input V+ Switch Input NO or NC tr t 5 ns tf t 5 ns VOUT 0.9 x VOUT IN Logic Input 50% VINL Switch Output COM VINH RL 50 W GND CL 35 pF Switch Output 0V tON tOFF 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM ǒ RL Ǔ R L ) R ON FIGURE 1. Switching Time Document Number: 72030 S-22312—Rev. A, 20-Jan-03 www.vishay.com 5 DG2016 New Product Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ COM NO VNO VINH tr <5 ns tf <5 ns VINL VO NC VNC RL 50 W IN CL 35 pF GND VNC = VNO VO 90% Switch 0V Output tD tD CL (includes fixture and stray capacitance) FIGURE 5. Break-Before-Make Interval V+ DVOUT V+ Rgen NC or NO COM VOUT VOUT + IN IN Vgen CL = 1 nF VIN = 0 - V+ On On Off GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 2. Charge Injection V+ V+ 10 nF 10 nF V+ V+ NC or NO IN COM 0V, 2.4 V Meter COM COM IN 0 V, 2.4 V RL NC or NO GND HP4192A Impedance Analyzer or Equivalent GND Analyzer VCOM Off Isolation + 20 log V NOńNC FIGURE 3. Off-Isolation www.vishay.com 6 f = 1 MHz FIGURE 4. Channel Off/On Capacitance Document Number: 72030 S-22312—Rev. A, 20-Jan-03