DG333A/333AL Vishay Siliconix Precision Quad SPDT Analog Switch 22-V Supply Voltage Range TTL and CMOS Compatible Logic Low On-Resistance (25 ) On-Resistance Matched Between Channels (<2 ) Flat On-Resistance Over Analog Signal Range ( <3 ) Low Charge Injection (1 pC) Low Leakage (0.2 nA) Fast Switching (175 ns) Single-Supply Operation (5 V to 40 V) ESD tolerance >2 kV per 3015.x Low Power (<1 A) – DG333A/333AL Rail-to-Rail Analog Signal Range Simple Logic Interface High Precision and Accuracy Minimal Transients Low Distortion Reduced Power Consumption Improved Reliability Break-Before-Make Switching Action Audio Switching Test Equipment Portable Instrumentation Communication Systems PBX, PABX Computer Peripherals Mass Storage Systems Switched-Capacitor Networks Battery-Powered Systems The DG333A/333AL consist of four independently controlled single-pole double-throw analog switches. These monolithic switch is designed to control analog signals with a high degree of accuracy. The DG333A/333AL minimize measurement errors by offering low on-resistance (25- typ), low leakage (20-pA typ) and low charge injection performance. The DG333AL features micro-power operation (<1-W typ). This is ideal for battery operated systems. Pin 15 is not connected on the DG333A. An improved charge injection compensation design minimizes switching transients. These switches can handle up to 22-V signals and have an improved continuous current of 30 mA. The DG333A/333AL is fabricated in Vishay Siliconix’s proprietary HVSG-2 CMOS process, resulting in higher speed and lower power consumption. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on. When off, they block voltages up to the power-supply levels. Dual-In-Line and Wide-Body SOIC IN1 1 20 IN4 S1 2 19 S8 D1 3 18 D4 S2 4 17 S7 V– 5 16 V+ GND 6 15 VL (DG333AL Only) S3 7 14 S6 D2 8 13 D3 S4 9 12 S5 IN2 10 11 IN3 SW1, 4, 5, 8 Normally Open SW2, 3, 6, 7 Normally Closed 0 Off On 1 On Off Logic Logic “0” 0.8 V Logic “1” 2.4 V Temp Range Package Part Number DG333ADJ 20-Pin Plastic DIP DG333ALDJ –40 40 to 85C DG333ADW Top View Document Number: 70803 S-52433—Rev. B, 06-Sep-99 20-Pin Wide-Body SOIC DG333ALDW www.vishay.com FaxBack 408-970-5600 4-1 DG333A/333AL Vishay Siliconix Voltages Referenced to V– Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125C V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V Power Dissipation (Package)b 20-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 890 mW 20-Pin Wide SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mW GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 12 mW/C above 75C d. Derate 10 mW/C above 75C Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA V+ S2 V– V+ VL (DG333AL) DG333A 5V Reg S1 Level Shift/ Drive INX V– V+ D GND V– FIGURE 1. www.vishay.com FaxBack 408-970-5600 4-2 Document Number: 70803 S-52433—Rev. B, 06-Sep-99 DG333A/333AL Vishay Siliconix Test Conditions Unless Otherwise Specified Limits D Suffix –40 to 85C V+ = 15 V, V V V– V = –15 15 V VIN = 2.4 V, 0.8 Ve Tempa Minb Full V– IS = –10 mA, VD = 10 V Room Full IS = –10 mA, VD = 5 V V+ = 16.5 V, V– = –16.5 V Room Full 3 5 DrDS(on) IS = –10 mA, VD = 10 V Room Full 2 4 Source Off Leakage Current IS(off) VD = 15.5 V, VS = 15.5 V V+ = 16.5V, V– = –16.5 V Room Hot –0.25 –20 0.25 20 Channel On Leakage Current ID(on) VD = 15.5 V, VS(open) = 15.5 V V+ = 16.5V, V– = –16.5 V Room Hot –0.75 –60 0.75 60 2.4 Parameter Symbol Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged VANALOG Channel On-Resistance rDS(on) On-Resistance Flatness rDS(on) Match Between Channelsf 25 45 90 W nA Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current 0.8 –1 1 V mA IINH or IINL VINH or VINL Full Turn-On Time tON 175 tOFF See Switching Time Test Circuit Figure 2 Room Turn-Off Time Room 145 ns tD See Figure 3 Room Q CL= 10 nF, Vgen = 0 V, Rgen = 0 W Room 10 pC RL = 75 W,, CL = 5 pF p VD = 2 2.3 3 VRMS, f = 1 MHz MH Room 72 Room 80 Room 8 Room 12 Dynamic Characteristics Break-Before-Make Time Delay Charge Injectiond Off Isolation OIRR Channel-to-Channel Crosstalk XTALK Off Capacitance COFF Channel On Capacitance CON f = 1 MHz, VS = 0 V 5 dB pF Power Supplies Positive Supply Current I+ Negative Supply Current I– Positive Supply Current I+ Room DG333A: VIN = 0 or 5 V Room 200 –1 Room 1 Logic Supply Current IL Negative Supply Current I– Room –1 V+/V– Full 4 Supply Voltage Range Document Number: 70803 S-52433—Rev. B, 06-Sep-99 DG333AL VIN = 0 or 5 V, DG333AL: V VL = 5 V Room mA A 1 22 V www.vishay.com FaxBack 408-970-5600 4-3 DG333A/333AL Vishay Siliconix Test Conditions Unless Otherwise Specified Parameter Limits D Suffix –40 to 85C V = 12 V V+ V, V V– = –0 0V TA = 25C Tempa Minb Full V– rDS(on) IS = –10 mA, VD = 10, 1 V Room IS(off) VD = 11 V, VS(open) = 1 V Room 0.25 ID(on) VD = 11 V, VS(open) = 0 V VD = 1 V, VS(open) = V+ Room 0.75 Symbol Typc Maxb Unit Analog Switch Analog Signal Ranged VANALOG Channel On-Resistance Source Off Leakage Current Channel On Leakage Current 35 V+ V 75 nA A Dynamic Characteristics Turn-On Time tON Turn-Off Time Break-Before-Make Time Delay Room tOFF See Switching Times Test Circuit Figure 2 tD See Figure 3 Room I+ DG333A: VIN = 0 or 5 V 90 Room 45 5 ns 10 Power Supplies Positive Supply Current Positive Supply Current I+ Logic Supply Current IL Positive Supply Range V+ DG333AL: VIN = 0 or 5 V, VL = 5 V Room 200 Room 1 Room 1 Room A A 1 Room 5 40 V Notes: a. Room = 25C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. f. On-resistance match and flatness are guaranteed only for bipolar supply operation. rDS(on) vs. VD (Dual Supply) rDS(on) vs. VD and Temperature (Dual Supply) 40 40 7.5 V 35 r DS(on)– On-Resistance ( ) r DS(on)– On-Resistance ( ) 35 30 10 V 25 15 V 20 20 V 15 10 –20 –15 –10 –5 0 5 10 15 20 125C 30 85C 70C 25 25C 20 0C –40C –55C 15 10 –15 –10 –5 0 5 10 15 VD – Drain Voltage (V) www.vishay.com FaxBack 408-970-5600 4-4 Document Number: 70803 S-52433—Rev. B, 06-Sep-99 DG333A/333AL Vishay Siliconix rDS(on) vs. VD (Single Supply) rDS(on) vs. VD and Temperature (Single Supply) 180 75 r DS(on)– On-Resistance ( ) r DS(on)– On-Resistance ( ) 150 5V 120 90 7V 10 V 60 12 V 15 V 30 63 51 125C 39 85C 70C 27 25C 0C –40C –55C 0 15 0 3 6 9 12 15 0 2 4 VD – Drain Voltage (V) 6 8 10 12 10 15 VD – Drain Voltage (V) Leakage Currents vs. Analog Voltage Drain Charge Injection 40 30 V+ = 15 V V– = –15 V 30 20 20 ID(off), IS(off) Q (pC) I (pA) 10 0 10 0 ID(on) –10 –10 –20 –20 –30 –15 –30 –15 –10 –5 0 5 10 15 –10 –5 0 5 VS – Source Voltage (V) VD or VS – Drain or Source Voltage (V) Input Switching Threshold vs. Supply Voltages Switching Time vs. Temperature 3.5 120 3.0 100 V+ = 15 V, V– = –15 V VIN = 3 V Pulse tON t ON , t OFF (ns) V IN (V) 2.5 2.0 1.5 80 tOFF 60 40 1.0 20 0.5 0 (V+) 5 10 15 20 25 30 35 40 0 –55 –40 –20 0 20 40 60 80 100 120 Temperature (C) Document Number: 70803 S-52433—Rev. B, 06-Sep-99 www.vishay.com FaxBack 408-970-5600 4-5 DG333A/333AL Vishay Siliconix Crosstalk and Off Isolation vs. Frequency Switching Time vs. Supply Voltages 140 80 120 Source 2 70 t ON , t OFF (ns) 100 Source 1 (dB) 80 60 40 tOFF 0 100 1k 60 50 V+ = 15 V V– = –15 V 20 tON V– = 0 V VIN = 3 V 10 k 100 k 10 M 1M 40 10 100 M 11 12 13 14 15 f – Frequency (Hz) Supply Voltage (V) Switching Time vs. V+ Power Supply Currents vs. Switching Frequency 16 10 mA 130 V+ = 15 V, V– = –15 V VIN = 5 V, 50% D Cycle 120 110 1 mA tON 90 V– = 0 V VIN = 3 V 80 I SUPPLY t ON , t OFF (ns) 100 70 100 A I+, I– 10 A IL 60 1 A 50 tOFF 40 100 nA 30 10 11 12 13 14 15 100 16 1k V+ Supply Voltage (V) 1M 10 M V+ = 16.5 V, V– = –16.5 V VIN = 0 V 10 nA I SUPPLY 100 k Supply Current vs. Temperature 1 A 100 nA 10 k f – Frequency (Hz) I+, I– 1 nA 100 pA IGND 10 pA 1 pA 0.1 pA –55 –40 –20 0 20 40 60 80 100 120 Temperature (C) www.vishay.com FaxBack 408-970-5600 4-6 Document Number: 70803 S-52433—Rev. B, 06-Sep-99 DG333A/333AL Vishay Siliconix tr <20 ns tf <20 ns +15 V 3V 50% VIN V+ +10 V –10 V 0V S1 VO S2 RL 300 IN1 tON tOFF D1 tOPEN +10 V 50% CL 35 pF VO 0V 50% 3V –10 V GND V– tOFF tON tOPEN –15 V Repeat Test for IN2, IN3 and IN4 FIGURE 2. Switching Times +15 V Logic Input V+ S1 10 V IN GND VO1 0V VD RL1 V– 90% VO2 S2 RL2 50% 0V VD VO1 D 3V CL1 90% VO2 CL2 0V tD tD –15 V RL = 300 , CL = 35 pF CL (includes fixture and stray capacitance) FIGURE 3. Break-Before-Make +15 V C V+ D 0V, 2.4 V IN S RL 100 Analyzer CH A CH B GND V– C VS Off Isolation 20 log V D C = RF Bypass –15 V FIGURE 4. Off Isolation Document Number: 70803 S-52433—Rev. B, 06-Sep-99 www.vishay.com FaxBack 408-970-5600 4-7 DG333A/333AL Vishay Siliconix +15 V C V+ D1 2.4 V IN1 2.4 V IN2 D4 S8 RL 100 50 W S1 GND V– Analyzer CH A CH B C –15 V FIGURE 5. Crosstalk +15 V C V+ D Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V S GND V– f = 1 MHz C –15 V FIGURE 6. Capacitances +15 V Rg V+ D S IN Vg CL 10 nF 3V GND VO VO VO IN On Off On V– Q = VO x CL –15 V FIGURE 7. Charge Injection www.vishay.com FaxBack 408-970-5600 4-8 Document Number: 70803 S-52433—Rev. B, 06-Sep-99 DG333A/333AL Vishay Siliconix Band-Pass Switched Capacitor Filter Single-pole double-throw switches are a common element for switched capacitor networks and filters. The fast switching times and low leakage of the DG333A/333AL allow for higher clock rates and consequently higher filter operating frequencies. Figure 8 shows two capacitors being switched. The DG333A/333AL is capable of switching four capacitors. +15 V V+ S1 D1 S2 IN1 ein S8 D4 S7 IN4 Clock 1/ 2 DG333A/333AL GND V– –15 V + – eout FIGURE 8. Band-Pass Switched Capacitor Filter Document Number: 70803 S-52433—Rev. B, 06-Sep-99 www.vishay.com FaxBack 408-970-5600 4-9