DG411L/412L/413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance—r DS(on): 17 D Fast Switching—tON: 19 ns —tOFF: 12 ns D TTL, CMOS Compatible D Low Leakage: 0.25 nA D 2000-V ESD Protection D D D D D D D D D D D Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals SDSL, DSLAM Audio and Video Signal Routing DESCRIPTION The DG411L/412L/413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411/412/413 with improved performance Using BiCMOS wafer fabrication technology allows the DG411L/412L/413L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with "3 to "6 V. Combining high speed (tON: 19 ns), flat rDS(on) over the analog signal range (5 ), minimal insertion lose (-3 dB at 280 MHz), and excellent crosstalk and off-isolation performance (-50 dB at 50 MHz), the DG411L/412L/413L are ideally suited for audio and video signal switching. The DG411L and DG412L respond to opposite control logic as shown in the Truth Table. The DG413L has two normally open and two normally closed switches. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG411L/412L TSSOP and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 Logic DG411L DG412L V- 4 13 V+ 0 ON OFF GND 5 12 VL 1 OFF ON S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 TRUTH TABLE Logic “0” v 0.8 V Logic “1” w 2.4 V Top View Document Number: 71397 S-21452—Rev. C, 26-Aug-02 www.vishay.com 1 DG411L/412L/413L Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG413L Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 TRUTH TABLE Logic SW1, SW4 SW2, SW3 0 OFF ON 1 ON OFF Logic “0” v 0.8 V Logic “1” w 2.4 V Top View ORDERING INFORMATION Temp Range Package Part Number DG411L/412L DG411LDY 16-Pin Narrow SOIC -40 to 85_C _ DG412LDY DG411LDQ 16-Pin TSSOP DG412LDQ DG413L -40 to 85_C _ 16-Pin Narrow SOIC DG413LDY 16-Pin TSSOP DG413LDQ ABSOLUTE MAXIMUM RATINGS V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V I a, N VS, VD . . . . . . . . . . -0.3 to (V+ +0.3 V) or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA Storage Temperature www.vishay.com 2 (DQ, DY Suffix) . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin TSSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C Document Number: 71397 S-21452—Rev. C, 26-Aug-02 DG411L/412L/413L Vishay Siliconix SPECIFICATIONSa (SINGLE SUPPLY 12 V) Limits Test Conditions Unless Specified Parameter Symbol -40 to 85_C V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Mind Full 0 V+ = 10.8 V, V- = 0 V IS = 10 mA, VD = 2/9 V Room Full Typc Maxd Unit 12 V 30 40 Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Current Channel On Leakage Current VANALOG rDS(on) IS(off) VD = 1/11 V, VS = 11/1 V ID(off) 20 Room Full -1 -10 1 10 Room Full -1 -10 1 10 1 10 ID(on) VS = VD = 11/1 V Room Full -1 -10 Input Current, VIN Low IIL VIN Under Test = 0.8 V Full -1 Input Current, VIN High IIH VIN Under Test = 2.4 V Full -1 nA Digital Control 0.01 1 A 1 Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injectione 20 50 60 Room Full 12 30 40 6 DG413L Only, VS = 5 V RL = 300 , CL = 35 pF Room Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 5 RL = 50 , CL = 5 pF, f = 1 MHz Room 71 Room 95 Room 5 OIRR Channel-to-Channel Crosstalke XTALK Source Off Room Full tD Off Isolatione Capacitancee RL = 300 , CL = 35 pF VS = 5 V See Figure 2 CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee Room 6 CD(on) Room 15 Positive Supply Current I+ Room Full 0.02 Negative Supply Current I- f = 1 MHz ns pC dB pF Power Supplies Room Full VIN = 0 or 5 V Logic Supply Current Ground Current IL Room Full IGND Room Full -1 -5 -0.002 0.002 -1 -5 1 5 A 1 5 -0.002 SPECIFICATIONSa (DUAL SUPPLY "5 V) Limits Test Conditions Unless Specified Parameter Symbol -40 to 85_C V+ = 5 V, V- = -5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Mind Full -5 V+ = 5 V, V- = -5 V IS = 10 mA, VD = "3.5 V Room Full Typc Maxd Unit 5 V 20 33 40 Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg Channel On Leakage Currentg Document Number: 71397 S-21452—Rev. C, 26-Aug-02 VANALOG rDS(on) IS(off) ID(off) ID(on) V+ = 5.5 V, V- = -5.5 V VD = "4.5 V, VS = #4.5 V V+ = 5.5 V, V- = -5.5 V VS = VD = "4.5 V Room Full -1 -10 1 10 Room Full -1 -10 1 10 Room Full -1 -10 1 10 nA www.vishay.com 3 DG411L/412L/413L Vishay Siliconix SPECIFICATIONSa (DUAL SUPPLY "5 V) Limits Test Conditions Unless Specified -40 to 85_C Symbol V+ = 5 V, V- = -5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Mind Typc Maxd Input Current, VIN Lowe IIL VIN Under Test = 0.8 V Full -1 0.05 1 Highe IIH VIN Under Test = 2.4 V Full -1 0.05 1 Room Full 21 50 60 Room Full 16 35 40 6 Parameter Unit Digital Control Input Current, VIN A Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF Break-Before-Make Time Delaye Charge RL = 300 , CL = 35 pF VS = "3.5 V See Figure 2 tD DG413L Only, VS = 3.5 V RL = 300 , CL = 35 pF Room Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 5 RL = 50 , CL = 5 pF, f = 1 MHz Room 68 Room 85 Injectione Off Isolatione OIRR Channel-to-Channel Crosstalke XTALK pC dB Source Off Capacitancee CS(off) Room 9 Drain Off Capacitancee CD(off) Room 9 CD(on) Room 20 Positive Supply Currente I+ Room Full 0.03 Negative Supply Currente I- Room Full Logic Supply Currente IL Room Full IGND Room Full Channel On Capacitancee f = 1 MHz ns pF Power Supplies VIN = 0 or 5 V Ground Currente -1 -5 -0.002 0.002 -1 -5 1 5 A 1 5 -0.002 SPECIFICATIONSa (SINGLE SUPPLY 5 V) Limits Test Conditions Unless Specified Parameter Symbol -40 to 85_C V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb V+ = 4.5 V, IS = 5 mA VD = 1 V, 3.5 V Mind Typc Maxd Unit 5 V Room Full 35 50 75 Room Hot 27 50 60 Room Hot 15 30 40 Analog Switch Analog Signal Rangee Drain-Source On-Resistancee VANALOG rDS(on) Full Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF RL = 300 , CL = 35 pF VS = 3.5 V, See Figure 2 Break-Before-Make Time Delaye tD DG413L Only, VS = 3.5 V, RL = 300 , CL = 35 pF Room 6 Charge Injectione Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 0.5 www.vishay.com 4 ns pC Document Number: 71397 S-21452—Rev. C, 26-Aug-02 DG411L/412L/413L Vishay Siliconix SPECIFICATIONSa (SINGLE SUPPLY 5 V) Limits Test Conditions Unless Specified Parameter Symbol V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf -40 to 85_C Tempb Mind Typc Maxd 0.02 1 5 Unit Power Supplies Positive Supply Currente I+ Room Hot Negative Supply Currente I- Room Hot Logic Supply Currente IL Room Hot IGND Room Hot VIN = 0 or 5 V Ground Currente -1 -5 -0.002 0.002 -1 -5 1 5 A -0.002 SPECIFICATIONSa (SINGLE SUPPLY 3 V) Limits Test Conditions Unless Specified Parameter Symbol -40 to 85_C V+ = 3 V, V- = 0 V VL = 3 V, VIN = 0.4 Vf Tempb Mind Full 0 V+ = 2.7 V, V- = 0 V IS = 5 mA, VD = 0.5, 2.2 V Room Full Typc Maxd Unit 3 V 65 80 100 Analog Switch Analog Signal Rangee Drain-Source On-Resistance Switch Off Leakage Currentg Channel On Leakage Currentg VANALOG rDS(on) IS(off) ID(off) V+ = 3.3 V, V- = 0 V VD = 1, 2 V, VS = 2, 1 V Room Full -1 -10 1 10 Room Full -1 -10 1 10 1 10 nA ID(on) V+ = 3.3 V, V- = 0 V VS = VD = 1, 2 V Room Full -1 -10 Input Current, VIN Low IIL VIN Under Test = 0.4 V Full -1 0.005 1 Input Current, VIN High IIH VIN Under Test = 2.4 V Full -1 0.005 1 Room Full 50 85 110 Room Full 30 60 85 6 Digital Control A Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injectione RL = 300 , CL = 35 pF VS = 1.5 V See Figure 2 tD DG413L Only, VS = 1.5 V RL = 300 , CL = 35 pF Room Q Vg = 0 V, Rg = 0 , CL = 10 nF Room 1 RL = 50 , CL = 5 pF, f = 1 MHz Room 68 Room 85 Room 6 Off Isolatione OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) f = 1 MHz Room 6 Room 20 ns pC dB pF Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. Document Number: 71397 S-21452—Rev. C, 26-Aug-02 www.vishay.com 5 DG411L/412L/413L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. Drain Voltage (Single Supply) rDS(on) vs. Drain Voltage and Temperature (Single Supply) 100 50 r DS(on) - On-Resistance ( ) r DS(on) - On-Resistance ( ) V+ = 5 V V- = 0 V 80 VCC = 2.7 V 60 40 VCC = 4.5 V VCC = 12 V 20 0 40 A B 30 C D 20 A-125 _C B-85 _C C-40 _C D-25 _C 10 0 0 3 6 9 12 0 1 2 rDS(on) vs. Drain Voltage and Temperature (Dual Supply) Supply Current vs. Temperature V" = "5 V V+ = 5 V V- = 0 V 0.25 28 Supply Current (nA) r DS(on) - On-Resistance ( ) 5 0.30 35 A 21 B C 14 D A-125 _C B-85 _C C-40 _C D-25 _C 7 -5 -3 0.20 0.15 0.10 0.05 0 -1 1 3 0.00 -50 5 -25 0 Drain Voltage (V) 25 50 75 100 125 150 Temperature (_C) Leakage Current vs. Analog Voltage (Dual Supply) Switching Time vs. Single Supply 30 50 V+ = 5 V V- = -5 V 20 40 Switching Speed (nS) I S , I D Leakage Current (pA) 4 Drain Voltage (V) Drain Voltage (V) 10 ID(on) 0 ID(off) IS(off) -10 tON 30 20 tOFF 10 -20 -30 0 -5 -3 -1 1 3 VD or VS - Drain-Source Voltage www.vishay.com 6 3 5 0 3 6 9 12 15 V+ - Positive Supply Voltage (V) Document Number: 71397 S-21452—Rev. C, 26-Aug-02 DG411L/412L/413L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Dual Supply Charge Injection vs. Drain Voltage 6 45 4 tON tOFF 27 Charge Injection (Q) Switching Speed (nS) 36 18 VSUPPLY = "5 V 2 VSUPPLY = 3 V 0 9 0 2.5 -2 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 -5 -3 -1 V" Positive Supply Voltage (V) 5 Drain Capacitance vs. Drain Voltage (Single Supply) 7 1.8 6 Capacitance (pF) 1.5 V TH - Threshold (V) 3 Drain Voltage (V) Input Threshold vs. Single Supply Voltage 1.2 0.9 0.6 CD(off) @ VCC = 5 V CD(off) @ VCC = 12 V 5 CD(off) @ VCC = 3 V 4 3 2 0.3 1 0.0 0 0 2 4 6 8 10 12 14 0 3 V" Positive Supply Voltage (V) 6 9 12 VD - Drain Voltage (V) Capacitance vs. Analog Signal (Dual Supply) Insertion Loss, Off Isolation and Crosstalk vs. Frequency (Single Supply) 25 10 VSUPPLY = "5 V CD(on) -10 20 -30 Loss (dB) Capacitance (pF) 1 15 -50 V+ = 3 V V- = 0 V RL = 50 Insertion Loss -3 dB = 280 MHz Off Isolation 10 -70 Crosstalk CS/CD(off) 5 -90 0 -1 10 -5 -3 -1 1 Analog Voltage (V) Document Number: 71397 S-21452—Rev. C, 26-Aug-02 3 5 0.1 1 10 100 1000 Frequency (MHz) www.vishay.com 7 DG411L/412L/413L Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- FIGURE 1. TEST CIRCUITS VL V+ Logic Input tr <20 ns tf <20 ns 3V 50% 0V VL VS V+ S tON D Switch Input* VO VS VO IN RL 300 V- GND CL 35 pF Switch Output Switch Input* V- 90% 0V tON 90% VO -V S CL (includes fixture and stray capacitance) RL VO = VS Note: RL + rDS(on) Logic input waveform is inverted for switches that have the opposite logic sense control FIGURE 2. Switching Time VL V+ Logic Input VS1 S1 D1 VS2 Switch Output IN2 GND RL1 300 V- 90% VO2 D2 S2 50% 0V VS1 VO1 VO1 IN1 3V RL2 300 CL2 35 pF CL1 35 pF Switch Output 0V VS2 VO2 0V 90% tD tD VCL (includes fixture and stray capacitance) FIGURE 3. Break-Before-Make (DG413L) www.vishay.com 8 Document Number: 71397 S-21452—Rev. C, 26-Aug-02 DG411L/412L/413L Vishay Siliconix TEST CIRCUITS VL VO V+ VO V+ VL Rg S INX D IN Vg OFF VO ON OFF CL 10 nF 3V V- GND INX V- OFF ON Q = VO x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. FIGURE 4. Charge Injection VL V+ C C VL S1 VS Rg = 50 V+ D1 50 IN1 0V, 2.4 V S2 D2 VO NC RL IN2 0V, 2.4 V GND V- C VS XTALK Isolation = 20 log VO V- C = RF bypass FIGURE 5. Crosstalk VL V+ C C VL V+ S VS V+ C VO D C VL Rg = 50 0V, 2.4 V VL V+ S RL 50 IN Meter GND V- IN C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D VGND Off Isolation = 20 log V- VS C VO C = RF Bypass FIGURE 6. Off Isolation Document Number: 71397 S-21452—Rev. C, 26-Aug-02 V- FIGURE 7. Source/Drain Capacitances www.vishay.com 9