DG417, DG418, DG419 Vishay Siliconix Precision CMOS Analog Switches DESCRIPTION FEATURES The DG417, DG418, DG419 monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. • • • • • • To achieve high-voltage ratings and superior switching performance, the DG417 series is built on Vishay Siliconix’s high voltage silicon gate (HVSG) process. Break-beforemake is guaranteed for the DG419, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG417 and DG418 respond to opposite control logic levels as shown in the Truth Table. ± 15 V analog signal range On-resistance - RDS(on): 20 Fast switching action - tON: 100 ns Ultra low power requirements - PD: 35 nW TTL and CMOS compatible MiniDIP and SOIC packaging • 44 V supply max. rating • 44 V supply max. rating • Compliant to RoHS directive 2002/95/EC BENEFITS • • • • • • Wide dynamic range Low signal errors and distortion Break-before-make switching action Simple interfacing Reduced board space Improved reliability APPLICATIONS • • • • • • • Precision test equipment Precision instrumentation Battery powered systems Sample-and-hold circuits Military radios Guidance and control systems Hard disk drives FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417 Dual-In-Line and SOIC TRUTH TABLE S 1 8 D NC 2 7 V- GND 3 6 IN V+ 4 5 VL Logic 0 1 DG417 ON OFF DG418 OFF ON Logic "0" 0.8 V Logic "1" 2.4 V Top View DG419 Dual-In-Line and SOIC D 8 1 TRUTH TABLE DG419 S2 S1 2 7 V- GND 3 6 IN V+ 4 5 VL Logic SW1 SW2 0 ON OFF 1 OFF ON Logic "0" 0.8 V Logic "1" 2.4 V Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 www.vishay.com 1 DG417, DG418, DG419 Vishay Siliconix ORDERING INFORMATION Temp. Range DG417, DG418 Package Part Number 8-Pin Plastic MiniDIP DG417DJ DG417DJ-E3 DG418DJ DG418DJ-E3 DG417DY DG417DY-E3 DG417DY-T1 DG417DY-T1-E3 - 40 °C to 85 °C 8-Pin Narrow SOIC DG418DY DG418DY-E3 DG418DY-T1 DG418DY-T1-E3 DG419 8-Pin Plastic MiniDIP DG419DJ DG419DJ-E3 8-Pin Narrow SOIC DG419DY DG419DY-E3 DG419DY-T1 DG419DY-T1-E3 - 40 °C to 85 °C ABSOLUTE MAXIMUM RATINGS Parameter (Voltages referenced to V-) V+ Limit 44 GND VL Unit 25 (GND - 0.3) to (V+) + 0.3 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 30 a Digital Inputs , VS, VD Current , (Any Terminal) Continuous Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle) Storage Temperature 100 (AK Suffix) - 65 to 150 (DJ, DY Suffix) - 65 to 125 8-Pin Plastic MiniDIPc b Power Dissipation (Package) 8-Pin Narrow SOIC e d V mA °C 400 400 mW 600 8-Pin CerDIP Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 75 °C. d. Derate 6.5 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 DG417, DG418, DG419 Vishay Siliconix SCHEMATIC DIAGRAM Typical Channel V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. SPECIFICATIONSa A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Symbol Analog Signal Rangee VANALOG Drain-Source On-Resistance RDS(on) VL = 5 V, VIN = 2.4 V, 0.8 Vf IS = - 10 mA, VD = ± 12.5 V V+ = 13.5 V, V- = - 13.5 V V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V ID(off) VS = ± 15.5 V DG417 DG418 DG419 Channel Off Leakage Current ID(on) Typ.c Full IS(off) Switch Off Leakage Current Temp.b V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V DG417 DG418 DG419 Room Full 20 Room Full Room Full Room Full Room Full Room Full - 0.1 - 0.1 - 0.1 - 0.4 - 0.4 Min.d Max.d Min.d Max.d Unit - 15 15 - 15 15 V 35 45 nA 35 45 - 0.25 - 20 - 0.25 - 20 - 0.75 - 60 - 0.4 - 40 - 0.75 - 60 0.25 20 0.25 20 0.75 60 0.4 40 0.75 60 - 0.25 -5 - 0.25 -5 - 0.75 - 12 - 0.4 - 10 - 0.75 - 12 0.25 5 0.25 5 0.75 12 0.4 10 0.75 12 Digital Control Input Current VIN Low IIL Full 0.005 - 0.5 0.5 - 0.5 0.5 Input Current VIN High IIH Full 0.005 - 0.5 0.5 - 0.5 0.5 DG417 DG418 Room Full 100 175 250 175 250 DG417 DG418 Room Full 60 145 210 145 210 DG419 Room Full 175 250 175 250 DG419 Room 13 Room 60 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Transition Time tTRANS Break-Before-Make Time Delay (DG403) tD Charge Injection Q Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 RL = 300 , CL = 35 pF VS = ± 10 V See Switching Time Test Circuit RL = 300 , CL = 35 pF VS1 = ± 10 V, VS2 = ± 10 V RL = 300 , CL = 35 pF VS1 = VS2 = ± 10 V CL = 10 nF, Vgen = 0 V, Rgen = 0 5 ns 5 pC www.vishay.com 3 DG417, DG418, DG419 Vishay Siliconix SPECIFICATIONSa A Suffix D Suffix - 55 °C to 125 °C - 40 °C to 85 °C Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Symbol Dynamic Characteristics Source Off CS(off) Capacitance Drain Off Capacitance CD(off) Channel On Capacitance CD(on) VL = 5 V, VIN = 2.4 V, 0.8 Vf f = 1 MHz, VS = 0 V f = 1 MHz, VS = 0 V DG417 DG418 DG417 DG418 DG419 Temp.b Typ.c Room 8 Room 8 Room 30 Room 35 Room Full Room Full Room Full Room Full 0.001 Min.d Max.d Min.d Max.d Unit pF Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V IGND Ground Current - 0.001 1 5 -1 -5 0.001 - 0.0001 1 5 -1 -5 1 5 1 5 -1 -5 µA -1 -5 SPECIFICATIONSa for Unipolar Supplies A Suffix - 55 °C to 125 °C Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Parameter Analog Switch Symbol Analog Signal Rangee VANALOG Drain-Source On-Resistance RDS(on) VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b Typ.c Full IS = - 10 mA, VD = 3.8 V V+ = 10.8 V Room 40 Room 110 Room 40 Room 60 Room 5 Room 0.001 Room - 0.001 Room 0.001 Room - 0.001 D Suffix - 40 °C to 85 °C Min.d Max.d Min.d Max.d Unit 0 12 0 12 V Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay tD Charge Injection Q Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current RL = 300 , CL = 35 pF, VS = 8 V See Switching Time Test Circuit DG419 Only RL = 300 , CL = 35 pF CL = 10 nF, Vgen = 0 V, Rgen = 0 I+ IIL IGND V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V ns pC µA Notes: a. Refer to Process Option Flowchart. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 DG417, DG418, DG419 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 50 ID = - 10 mA ±5V TA = 125 °C 40 30 R DS(on) () R DS(on) () ±8V 30 ± 10 V ± 12 V ± 15 V 20 ± 20 V 25 °C 20 - 55 °C 10 10 0 0 - 20 - 15 - 10 -5 0 5 15 10 - 15 20 - 10 -5 0 5 10 VD - Drain Voltage (V) RDS(on) vs. VD and Supply Voltage RDS(on) vs. Temperature 30 200 V+ = 15 V V- = - 15 V VL = 5 V 20 V+ = 16.5 V V- = - 16.5 V VL = 5 V VIN = 0 V 150 CL = 10 nF 1 nF DG417/418: I D(off), IS(off) DG419: I S(off) 10 500 pF Q (pC) 100 I (pA) 15 VD - Drain Voltage (V) 0 100 pF 50 DG417/418: I D(on) DG419: I D(off), ID(on) - 10 0 - 20 - 30 - 50 - 15 - 10 -5 0 5 15 10 - 15 - 10 -5 0 5 10 VD or V S - Drain or Source Voltage (V) VS - Source Voltage (V) Leakage Currents vs. Analog Voltage Drain Charge Injection 15 3.5 3.0 V TH (V) 2.5 VL = 7 V 2.0 1.5 VL = 5 V 1.0 0.5 0 5 10 15 20 25 30 35 40 (V+) Input Switching Threshold vs. Supply Voltages Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 www.vishay.com 5 DG417, DG418, DG419 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 120 V+ = 15 V, V- = - 15 V VL = 5 V, V IN = 3 V Pulse 100 tON 120 DG417/418/419 Source 2 DG419 Source 1 80 tOFF (dB) t ON , t OFF (ns) 100 80 60 60 40 40 20 V+ = 15 V V- = - 15 V VL = 5 V 20 0 0 - 55 - 40 - 20 0 20 40 60 80 100 1k 100 120 100 k 10 k 10M 1M 100M f - Frequency (Hz) Temperature (°C) Crosstalk and Off Isolation vs. Frequency Switching Time vs. Temperature 130 80 120 110 60 100 tON V- = 0 V VL = 5 V VIN = 3 V t ON , t OFF (ns) t ON, t OFF (ns) 70 tON 90 V- = 0 V VL = 5 V VIN = 3 V 80 70 60 50 50 tOFF tOFF 40 40 30 ± 10 ± 11 ± 12 ± 13 ± 14 ± 15 ± 16 10 11 12 13 14 15 Supply Voltage (V) V+ Supply Voltage (V) Switching Time vs. Supply Voltages Switching Time vs. V+ 10 mA 16 1 µA V+ = 15 V, V- = - 15 V VL = 5 V, V IN = 5 V, 50 % D-Cycle 100 nA V+ = 16.5 V, V- = - 16.5 V VL = 5 V, V IN = 0 V 1 mA I SUPPLY I SUPPLY 10 nA I+, I- 100 µA I+, I10 µA 1 nA 100 pA IL IGND 10 pA 1 µA 1 pA 100 nA 100 1k 10 k 100 k 1M 10M f - Frequency (Hz) Power Supply Currents vs. Switching Frequency www.vishay.com 6 0.1 pA - 55 - 40 - 20 0 20 40 60 80 100 120 Temperature (°C) Supply Current vs. Temperature Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 DG417, DG418, DG419 Vishay Siliconix TEST CIRCUITS VO is the steady state output with the switch on. +5V + 15 V 3V Logic Input VL V+ S ± 10 V tr < 20 ns tf < 20 ns 50 % 0V D VO tOFF IN GND RL 300 V- CL 35 pF - 15 V CL (includes fixture and stray capacitance) Switch Input VS Switch Output 0V Note: RL VO = V S VO 90 % tON Logic input waveform is inverted for switches that have the opposite logic sense. RL + rDS(on) Figure 2. Switching Time (DG417, DG418) +5V + 15 V Logic Input VL VS1 VS2 V+ S1 3V tr < 20 ns tf < 20 ns 0V D VO S2 RL 300 IN Switch Output V- GND VS1 = VS2 VO CL 35 pF 90 % 0V tD tD CL (includes fixture and stray capacitance) - 15 V Figure 3. Break-Before-Make (DG419) +5V VL VS1 VS2 + 15 V V+ S1 D VO Logic Input 3V 0V S2 RL 300 IN GND tr < 20 ns tf < 20 ns 50 % tTRANS CL 35 pF tTRANS VS1 V01 V- - 15 V 90 % Switch Output VS2 V02 10 % CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) Figure 4. Transition Time (DG419) Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 www.vishay.com 7 DG417, DG418, DG419 Vishay Siliconix TEST CIRCUITS Rg +5V - 15 V VL V+ S VO VO D VO IN INX OFF CL 10 nF 3V ON V- GND OFF Q = VO x CL - 15 V Figure 5. Charge Injection + 15 V +5V C +5V C + 15 V C VL S1 VS VL D Rg = 50 V+ S VS VO D Rg = 50 50 VO C V+ S2 RL IN 0 V, 2.4 V RL GND IN V- C 0.8 V GND C V- - 15 V - 15 V XTA LK Isolation = 20 log C = RF bypass Off Isolation = 20 log VS VO VS VO Figure 7. Off Isolation Figure 6. Crosstalk (DG419) +5V + 15 V C C VL V+ S VS D VO Rg = 50 RL IN 0 V, 2.4 V GND V- C - 15 V Figure 8. Insertion Loss www.vishay.com 8 Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 DG417, DG418, DG419 Vishay Siliconix TEST CIRCUITS +5V + 15 V NC + 15 V C C VL C V+ S V+ S2 DG417/418 DG419 Meter 0 V, 2.4 V IN V- 0 V, 2.4 V HP4192A Impedance Analyzer or Equivalent D GND Meter HP4192A Impedance Analyzer or Equivalent IN D2 D1 GND f = 1 MHz C S1 VC f = 1 MHz - 15 V - 15 V Figure 9. Source/Drain Capacitances APPLICATIONS Switched Signal Powers Analog Switch The analog switch in Figure 10 derives power from its input signal, provided the input signal amplitude exceeds 4 V and its frequency exceeds 1 kHz. A positive input pulse turns on the clamping diode D1 and charges C1. The charge stored on C1 is used to power the chip; operation is satisfactory because the switch requires less than 1 µA of stand-by supply current. Loading of the signal source is imperceptible. The DG419’s on-resistance is a low 100 for a 5 V input signal. This circuit is useful when signals have to be routed to either of two remote loads. Only three conductors are required: one for the signal to be switched, one for the control signal and a common return. D1 C1 0.01 µF VL V+ S1 D VOUT Input S2 RL2 10 k IN Control DG419 GND V- RL1 10 k Figure 10. Switched Signal Powers Remote SPDT Analog Switch Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 www.vishay.com 9 DG417, DG418, DG419 Vishay Siliconix APPLICATIONS Micropower UPS Transfer Switch Programmable Gain Amplifier When VCC drops to 3.3 V, the DG417 changes states, closing SW1 and connecting the backup cell, as shown in Figure 10. D1 prevents current from leaking back towards the rest of the circuit. Current consumption by the CMOS analog switch is around 100 pA; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of A are sufficient to retain memory data. The DG419, as shown in figure 11, allows accurate gain selection in a small package. Switching into virtual ground reduces distortion caused by RDS(on) variation as a function of analog signal amplitude. When the 5 V supply comes back up, the resistor divider senses the presence of at least 3.5 V, and causes a new change of state in the analog switch, restoring normal operation. GaAs FET Driver The DG419, as shown in figure 12 may be used as a GaAs FET driver. It translates a TTL control signal into - 8 V, 0 V level outputs to drive the gate. V+ D1 SW1 VL D VCC (5 V) R1 VSENSE 453 k S + DG417 Memory 3 V Li Cell – IN GND R2 383 k V- Figure 11. Micropower UPS Circuit +5V DG419 S1 S2 R1 VL R2 GaAs FET V+ S1 S2 IN D VOUT D DG419 5V VIN GND - V- VOUT + -8V Figure 12. Programmable Gain Amplifier Figure 13. GaAs FET Driver Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70051. www.vishay.com 10 Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Package Information Vishay Siliconix PDIP: 8ĆLEAD 8 7 6 5 E1 1 2 Dim A A1 B B1 C D E E1 e1 eA L Q1 S 3 E 4 D S Q1 A MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 9.02 10.92 0.355 0.430 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.76 1.65 0.030 0.065 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5478 A1 15° MAX e1 B1 Document Number: 71259 05-Jul-01 L B C NOTE: End leads may be half leads. eA www.vishay.com 1 Package Information Vishay Siliconix CERDIP: 8ĆLEAD 8 7 6 MILLIMETERS 5 Dim A A1 B B1 C D E E1 e1 eA L L1 Q1 S E E1 1 2 3 4 D S e1 Q1 A L1 A1 ∝ L INCHES Min Max Min Max 4.06 5.08 0.160 0.200 0.51 1.14 0.020 0.045 0.38 0.51 0.015 0.020 1.14 1.65 0.045 0.065 0.20 0.30 0.008 0.012 9.40 10.16 0.370 0.400 7.62 8.26 0.300 0.325 6.60 7.62 0.260 0.300 2.54 BSC 0.100 BSC 7.62 BSC 0.300 BSC 3.18 3.81 0.125 0.150 3.18 5.08 0.150 0.200 1.27 2.16 0.050 0.085 0.64 1.52 0.025 0.060 0° 15° 0° 15° ECN: S-03946—Rev. C, 09-Jul-01 DWG: 5348 B1 B Document Number: 71280 03-Jul-01 C eA ∝ www.vishay.com 1 VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. 0.288 7.3 0.050 1.27 0.196 5.0 0.027 0.69 0.078 1.98 0.2 5.07 Figure 1. Single MOSFET SO-8 Pad Pattern With Copper Spreading Document Number: 70740 Revision: 18-Jun-07 0.050 1.27 0.088 2.25 0.088 2.25 0.027 0.69 0.078 1.98 0.2 5.07 Figure 2. Dual MOSFET SO-8 Pad Pattern With Copper Spreading The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. www.vishay.com 1 APPLICATION NOTE In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board. 0.288 7.3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1