DG417L, DG418L, DG419L Vishay Siliconix Precision Monolithic Low-Voltage CMOS Analog Switches DESCRIPTION The DG417L, DG418L, DG419L are low voltage pin-for-pin compatible companion devices to the industry standard DG417, DG418, DG419 with improved performance. Using BiCMOS wafer fabrication technology allows the DG417L, DG418L, DG419L to operate on single and dual supplies. Single supply voltage ranges from 3 V to 12 V while dual supply operation is recommended with ± 3 V to ± 6 V. Combining high speed (tON: 28 ns), flat RON over the analog signal range (6 ), minimal insertion lose (up to 100 MHz), and excellent crosstalk and off-isolation performance (- 70 dB at 1 MHz), the DG417L, DG418L, DG419L are ideally suited for audio and video signal switching. The DG417L and DG418L respond to opposite control logic as shown in the truth table. The DG419L has an SPDT configuration. FEATURES • 2.7 V- thru 12 V single supply or ± 3- thru ± 6 dual supply • On-resistance - RON: 14 • Fast switching - tON: 28 ns - tOFF: 13 ns • TTL, CMOS compatible • Low leakage: < 100 pA • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Precision automatic test equipment • • • • • Precision data acquisition Communication systems Battery powered systems Computer peripherals SDSL, DSLAM • Audio and video signal routing BENEFITS • Widest dynamic range • Low signal errors and distortion • Break-before-make switching action • Simple interfacing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417L, DG418L DG419L Dual-In-Line, MSOP-8 and SOIC-8 Dual-In-Line, MSOP-8 and SOIC-8 NC/NO 1 8 COM COM 1 8 NO * 2 7 V- NC 2 7 V- GND 3 6 IN GND 3 6 IN V+ 4 5 VL V+ 4 5 VL Top View Top View * Not Connected TRUTH TABLE (DG419L) TRUTH TABLE Logic 0 1 DG417L ON OFF DG418L OFF ON ORDERING INFORMATION (DG417L, DG418L) Temp. Range Package 8-Pin Narrow SOIC 8-Pin MSOP Part Number DG417LDY DG417LDY-E3 DG417LDY-T1 DG417LDY-T1-E3 DG418LDY DG418LDY-E3 DG418LDY-T1 DG418LDY-T1-E3 Logic 0 1 NC ON OFF NO OFF ON ORDERING INFORMATION (DG419L) Temp. Range - 40 °C to 85 °C Package 8-Pin Narrow SOIC 8-Pin MSOP Part Number DG419LDY DG419LDY-E3 DG419LDY-T1 DG419LDY-T1-E3 DG419LDQ-T1-E3 DG417LDQ-T1-E3 DG418LDQ-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit V+ to VGND to VVL - 0.3 to 13 7 (GND - 0.3) to (V+) + 0.3 - 0.3 to (V+ + 0.3) or 30 mA, whichever occurs first V IN, COM, NC, NOa Continuous Current (Any Terminal) Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) Storage Temperature (AK, DQ, DY Suffix) 30 100 - 65 to 150 320 400 600 c 8-Pin MSOP 8-Pin SOICc 8-Pin CerDIPd Power Dissipation (Packages)b mA °C mW Notes: a. Signals on NC, NO, COM, or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 25 °C. d. Derate 12 mW/°C above 75 °C. SPECIFICATIONS (Single Supply 12 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Min.d Max.d Unit 0 12 0 12 V 20 23.5 Analog Switch Analog Signal Rangee VANALOG RON On-Resistance Switch Off Leakage Current INO(off) INC(off) ICOM(off) Channel On Leakage Current ICOM(on) Full V+ = 10.8 V, V- = 0 V Room INO, INC = 5 mA, VCOM = 2 V / 9 V Full VCOM = 1 V / 11 V VNO, VNC = 11 V / 1 V VNO, VNC = VCOM = 11 V / 1 V 13 20 32 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 - 1.5 1.5 -1 1 µA 43 46 31 32 ns nA Digital Control IINL or IINH Input Current Full 0.01 RL = 300 , CL = 35 pF VNO, VNC = 5 V, see figure 2 Room Full Room Full 28 tD DG419L only, VNC, VNO = 5 V RL = 300 , CL = 35 pF Room 13 Charge Injectione QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 1 Off-Isolatione OIRR - 71 Channel-to-Channel Crosstalke XTALK RL = 50 , CL = 5 pF , f = 1 MHz Room Room - 71 Room 5 CON Room 15 Positive Supply Current I+ 0.02 Negative Supply Current I- Room Full Room Full Room Full Room Full Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay CNO(off) CNC(off) Source Off Capacitancee Channel-On Capacitance Power Supplies e VIN = 0 or V+, f = 1 MHz VIN = 0 or VL Logic Supply Current Ground Current www.vishay.com 2 IL IGND 43 50 31 35 13 - 0.002 pC dB pF 1 7.5 -1 - 7.5 0.002 - 0.002 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix SPECIFICATIONS (Dual Supply ± 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Min.d Max.d Unit -5 5 -5 5 V 18.5 21 Analog Switch Analog Signal Rangee On-Resistance VANALOG RON INO(off) INC(off) Switch Off Leakage Currenta Channel On Leakage Currenta ICOM(off) ICOM(on) Full V+ = 5 V, V- = - 5 V INO, INC = 5 mA, VCOM = ± 3.5 V Room Full V+ = 5.5 , V- = - 5.5 V VCOM = ± 4.5 V VNO, VNC = ± 4.5 V Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 V+ = 5.5 V, V- = - 5.5 V VNO, VNC = VCOM = ± 4.5 V Room Full -1 - 15 1 15 -1 - 10 1 10 - 1.5 1.5 -1 1 14 18.5 30 nA Digital Control Input Currenta IINL or IINH Full 0.05 Room Full 30 41 50 41 44 Room Full 16 32 36 32 33 47 47 µA Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF RL = 300 , CL = 35 pF VNO, VNC = ± 3.5 V, see figure 2 tD DG419L only, VNO, VNC = 3.5 V RL = 300 , CL = 35 pF Room 10 tTRANS RL = 300 , CL = 35 pF VS1 = ± 3.5 V, VS2 = ± 3.5 V Room 33 QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 3 Room - 71 Room - 76 Room 5.2 CON Room 15 Positive Supply Currente I+ Room Full 0.03 Negative Supply Currente I- Room Full - 0.002 Room Full Room Full 0.002 Break-Before-Make Time Delaye TransitionTime Charge Injectione Off-Isolation e Channel-to-Channel Crosstalke Source Off Capacitancee Channel-On Capacitancee OIRR XTALK CNO(off) CNC(off) RL = 50 , CL = 5 pF , f = 1 MHz f = 1 MHz ns pC dB pF Power Supplies VIN = 0 or VL Logic Supply Currente Ground Currente Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 IL IGND - 0.002 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix SPECIFICATIONS (Single Supply 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Min.d Max.d Unit 5 5 V Analog Switch Analog Signal Rangee On-Resistancee VANALOG Full V+ = 4.5 V, INO, INC = 5 mA VCOM = 1 V, 3.5 V Room Full 26 36.5 50 36.5 40.5 Room Full 37 49 60 49 54 Room Full 16 31 35 31 32 tD DG419L only, VNO, VNC = 3.5 V RL = 300 , CL = 35 pF Room 19 QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 0.4 RON Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF Break-Before-Make Time Delaye Charge Injectione RL = 300 , CL = 35 pF VNO, VNC = 3.5 V, see figure 2 ns pC Power Supplies Positive Supply Currente I+ Room Full 0.02 Negative Supply Currente I- Room Full - 0.002 Logic Supply Currente IL Room Full Room Full 0.002 VIN = 0 or VL Ground Currente www.vishay.com 4 IGND - 0.002 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix SPECIFICATIONS (Single Supply 3 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V VL = 3 V, VIN = 2 V, 0.4 Vf A Suffix Limits D Suffix Limits - 55 °C to 125 °C - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Min.d Max.d Unit 0 3 0 3 V 70 75 Analog Switch Analog Signal Rangee On-Resistance VANALOG RON INO(off) INC(off) Switch Off Leakage Currenta Channel On Leakage Currenta ICOM(off) ICOM(on) Full V+ = 2.7 V, V- = 0 V Room INO, INC = 5 mA, VCOM = 0.5 V, 2.2 V Full V+ = 3.3 , V- = 0 V VCOM = 1, 2 V, VNO, VNC = 2, 1 V V+ = 3.3 V, V- = 0 V VNO, VNC = VCOM = 1 V, 2 V 70 80 47 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 - 1.5 1.5 -1 1 nA Digital Control Input Currenta IINL or IINH Full 0.005 Room Full 65 75 95 75 85 Room Full 26 41 45 41 43 Room 33 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injectione Off-Isolation e Channel-to-Channel Crosstalke RL = 300 , CL = 35 pF VNO, VNC = 1.5 V, see figure 2 tD DG419L only, VNO, VNC = 1.5 V RL = 300 , CL = 35 pF QINJ Vg = 0 V, Rg = 0 , CL = 10 nF OIRR XTALK Source Off Capacitancee CNO(off) CNC(off) Channel On Capacitancee CD(on) RL = 50 , CL = 5 pF , f = 1 MHz f = 1 MHz Room 1 Room - 71 Room - 77 Room 5.6 Room 16 ns pC dB pF Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 80 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 50 V+ = 2.7 V 40 30 V+ = 4.5 V 20 V+ = 10.8 V A = 125 °C B = 85 °C C = 25 °C D = - 40 °C E = - 55 °C 60 A B 50 V+ = 4.5 V C 40 D E A B 30 C D 20 E 10 10 0 0 0 3 6 9 12 0 1 2 VCOM - Analog Voltage (V) 3 4 5 VCOM - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. VCOM and Supply Voltage 10 000 30 V±=±5V VIN = 0 V 20 I+ - Supply Current (nA) V± =± 5V IS = 5 mA 25 R ON - On-Resistance (Ω) V+ = 2.7 V IS = 5 mA 70 T = 25 °C IS = 5 mA 125 °C 85 °C 15 25 °C - 40 °C 10 - 55 °C 1000 5 0 -5 -3 -1 1 3 100 - 55 5 - 35 - 15 5 RON vs. Analog Voltage and Temperature 45 65 85 105 125 105 125 Supply Current vs. Temperature 10 000 10 m V+ = 12 V V- = 0 V 1m 1000 100 µ Leakage Current (pA) I+ - Supply Current (nA) 25 Temperature (°C) VCOM - Analog Voltage (V) 10 µ 1µ 100 n ICOM(on) 100 ICOM(off) 10 10 n 1 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency www.vishay.com 6 1 - 55 - 35 - 15 5 25 45 65 85 Temperature (°C) Leakage Current vs. Temperature Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 90 80 t ON , t OFF - Switching Time (ns) Leakage Current (pA) V+ = 12 V V- = 0 V 20 ICOM(off)/ICOM(on) 0 INO(off)/INC(on) - 20 70 tON V+ = 3 V 60 50 40 tON V+ = 5 V tON V+ = 12 V 30 20 10 0 - 55 - 40 0 2 4 6 8 10 12 tOFF V+ = 12 V - 35 - 15 5 25 VCOM, V NO, V NC - Analog Voltage (V) 65 85 105 125 Switching Time vs. Temperature and Single Supply Voltage 80 10 Loss 70 - 10 60 tON V+ = ± 3 V 50 40 tON V+ = ± 5 V 30 tON V+ = ± 6 V 20 tOFF V+ = ± 3 V Loss, OIRR, X TALK (dB) t ON , t OFF - Switching Time (ns) 45 Temperature (°C) Leakage vs. Analog Voltage - 30 - 50 OIRR - 70 V+ = 3 V V- = 0 V RL = 50 Ω - 90 10 tOFF V+ = ± 6 V 0 tOFF V+ = ± 5 V - 110 - 55 - 35 - 15 5 25 45 65 85 105 125 0.1 1 Temperature (°C) 12 10 1.8 VL = V+ V+ = 12 V Q - Charge Injection (pC) 8 1.4 1.2 1.0 0.8 0.6 0.4 6 4 V+ = 5 V V=± 5V 2 0 V+ = 3 V -2 -4 -6 -8 0.2 0.0 2.0 1000 Insertion Loss, Off -Isolation Crosstalk vs. Frequency 2.0 1.6 100 10 Frequency (Hz) Switching Time vs. Temperature and Dual Supply Voltage VT - Switching Threshold (V) tOFF V+ = 3 V tOFF V+ = 5 V - 10 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 6.0 - 12 -6 -4 -2 0 2 4 6 8 10 12 VCOM - Analog Voltage (V) Charge Injection vs. Analog Voltage) www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix SCHEMATIC DIAGRAM (Typical Channel) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS VL V+ Logic Input VINH tr < 5 ns tf < 5 ns 50 % VINL Switch Input VIN VL Switch Output V+ NO or NC COM tOFF VOUT VOUT IN RL 300 Ω V- GND CL 35 pF 0.9 x V OUT 90 % 0V Switch Output tON VCL (includes fixture and stray capacitance) RL VOUT = V IN Note: RL + R ON Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time VL V+ VL VNO VNC Logic Input V+ tr < 5 ns tf < 5 ns VINL COM NO VINH VO NC RL 300 Ω IN GND V- CL 35 pF VNC = VNO VO Switch Output 90 % 0V tD tD VCL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG419L) www.vishay.com 8 Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix TEST CIRCUITS +5V VL + 15 V V+ NO or NC Logic VINH Input VINL COM VS1 VO NC or NO VS2 RL 300 Ω IN tr < 5 ns tf < 5 ns 50 % tTRANS CL 35 pF tTRANS VS1 V01 V- GND 90 % Switch Output 10 % V02 VS2 VCL (includes fixture and stray capacitance) RL VO = V S RL + R ON Figure 4. Transition Time (DG419L) VL V+ VL V+ ΔVO VO Rg COM NO or NC IN Vg IN VO OFF ON CL 1 nF Q = ΔVO x CL V- GND OFF IN dependent on switch configuration Input polarity determined by sense of switch. VVIN = 0 - V+ Figure 5. Charge Injection VL C V+ C VL VS VIN NO or NC V+ COM Rg = 50 Ω 50 Ω IN 0 V or 2.4 V NC or NO VOUT GND XTA LK Isolation = 20 log V- C VOUT VIN V- C = RF bypass Figure 6. Crosstalk (DG419L) Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 www.vishay.com 9 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG417L, DG418L, DG419L Vishay Siliconix TEST CIRCUITS V+ VL C C NO or NC COM Rg = 50 Ω RL 50 Ω IN 0 V, 2.4 V GND V- C VOff Isolation = 20 log C = RF Bypass VCOM VNO/NC Figure 7. Off Isolation VL V+ C C VL V+ COM Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V NO or NC GND V- C f = 1 MHz V- Figure 8. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71763. www.vishay.com 10 Document Number: 71763 S11-0598-Rev. F, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Package Information Vishay Siliconix MSOP: 8−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 0.10 C -H- A1 D 6 Seating Plane c Section “C-C” Scale: 100/1 (See Note 8) Base Metal -A- 3 See Detail “A” Side View 0.25 BSC C Parting Line 0.07 R. Min 2 Places Seating Plane ς A2 0.05 S C E1 -B- L 4 T -C- 3 0.95 End View Detail “A” (Scale: 30/1) N = 8L NOTES: 1. Die thickness allowable is 0.203"0.0127. 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. Dimension is the length of terminal for soldering to a substrate. 5. Terminal positions are shown for reference only. 6. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. Controlling dimension: millimeters. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . MILLIMETERS Dim Min Nom Max A A1 A2 b b1 c c1 D E E1 e e1 L N T - - 1.10 0.05 0.10 0.15 0.75 0.85 0.95 0.25 - 0.38 8 0.25 0.30 0.33 8 0.13 - 0.23 0.15 0.18 0.13 3.00 BSC Note 3 4.90 BSC 2.90 3.00 3.10 3 0.70 4 0.65 BSC 1.95 BSC 0.40 0.55 8 0_ 4_ 5 6_ ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71244 12-Jul-02 www.vishay.com 1 VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. 0.288 7.3 0.050 1.27 0.196 5.0 0.027 0.69 0.078 1.98 0.2 5.07 Figure 1. Single MOSFET SO-8 Pad Pattern With Copper Spreading Document Number: 70740 Revision: 18-Jun-07 0.050 1.27 0.088 2.25 0.088 2.25 0.027 0.69 0.078 1.98 0.2 5.07 Figure 2. Dual MOSFET SO-8 Pad Pattern With Copper Spreading The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. www.vishay.com 1 APPLICATION NOTE In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board. 0.288 7.3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1