DG417L/418L/419L Vishay Siliconix Precision Monolithic Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG417L/418L/419L are low voltage pin-for-pin compatible companion devices to the industry standard DG417/418/419 with improved performance. • 2.7- thru 12 V Single Supply or ± 3- thru ± 6 Dual Supply • On-Resistance - rON: 14 Ω • Fast Switching - tON: 28 ns - tOFF: 13 ns • TTL, CMOS Compatible • Low Leakage: < 100 pA Using BiCMOS wafer fabrication technology allows the DG417L/418L/419L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with ± 3 to ± 6 V. Combining high speed (tON: 28 ns), flat rON over the analog signal range (6 Ω), minimal insertion lose (up to 100 MHz), and excellent crosstalk and off-isolation performance (- 70 dB at 1 MHz), the DG417L/418L/419L are ideally suited for audio and video signal switching. The DG417L and DG418L respond to opposite control logic as shown in the Truth Table. The DG419L has an SPDT configuration. BENEFITS • • • • Pb-free Available RoHS* COMPLIANT APPLICATIONS • • • • • • • Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals SDSL, DSLAM Audio and Video Signal Routing Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417L/DG418L DG419L Dual-In-Line, MSOP-8 and SOIC-8 Dual-In-Line, MSOP-8 and SOIC-8 NC/NO 1 8 COM COM 1 8 NO * 2 7 V- NC 2 7 V- GND 3 6 IN GND 3 6 IN V+ 4 5 VL V+ 4 5 VL Top View Top View *Not Connected TRUTH TABLE - DG419L TRUTH TABLE Logic 0 1 DG417L ON OFF DG418L OFF ON ORDERING INFORMATION DG417L/418L Temp Range Package 8-Pin Narrow SOIC 8-Pin MSOP Part Number DG417LDY DG417LDY-E3 DG417LDY-T1 DG417LDY-T1-E3 DG418LDY DG418LDY-E3 DG418LDY-T1 DG418LDY-T1-E3 Logic 0 1 NC ON OFF NO OFF ON ORDERING INFORMATION DG419L Temp Range - 40 to 85 °C Package 8-Pin Narrow SOIC 8-Pin MSOP Part Number DG419LDY DG419LDY-E3 DG419LDY-T1 DG419LDY-T1-E3 DG419LDQ-T1-E3 DG417LDQ-T1-E3 DG418LDQ-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71763 S-71009–Rev. E, 14-May-07 www.vishay.com 1 DG417L/418L/419L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit V+ to VGND to VVL - 0.3 to 13 7 (GND - 0.3) to (V+) + 0.3 - 0.3 to (V+ + 0.3) or 30 mA, whichever occurs first V a IN, COM, NC, NO Continuous Current (Any Terminal) Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) Storage Temperature (AK, DQ, DY Suffix) 30 100 - 65 to 150 320 400 600 8-Pin MSOPc 8-Pin SOICc 8-Pin CerDIPd Power Dissipation (Packages)b mA °C mW Notes: a. Signals on NC, NO, COM, or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/°C above 25 °C. d. Derate 12 mW/°C above 75 °C. SPECIFICATIONS (SINGLE SUPPLY 12 V) Parameter Symbol A Suffix Limits D Suffix Limits - 55 to 125 °C - 40 to 85 °C Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb V+ = 10.8 V, V- = 0 V INO, INC = 5 mA, VCOM = 2/9 V Room Full Typc Mind Maxd Mind 12 0 Maxd Unit 12 V 20 23.5 Ω Analog Switch Analog Signal Rangee On-Resistance Switch Off Leakage Current VANALOG rON INO(off) INC(off) ICOM(off) Channel On Leakage Current ICOM(on) Full VCOM = 1/11 V VNO, VNC = 11/1 V VNO, VNC = VCOM = 11/1 V 0 13 20 32 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 - 1.5 1.5 -1 1 µA 43 46 31 32 ns nA Digital Control Input Current IINL or IINH Full 0.01 RL = 300 Ω, CL = 35 pF VNO, VNC = 5 V, See Figure 2 Room Full Room Full 28 tD DG419L Only, VNC, VNO = 5 V RL = 300 Ω, CL = 35 pF Room Charge Injectione QINJ Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 1 Off-Isolatione OIRR - 71 Channel-to-Channel Crosstalke XTALK RL = 50 Ω, CL = 5 pF , f = 1 MHz Room Room - 71 Room 5 CON Room 15 Positive Supply Current I+ 0.02 Negative Supply Current I- Room Full Room Full Room Full Room Full Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Source Off Capacitancee Channel-On Capacitancee Power Supplies CNO(off) CNC(off) VIN = 0 or V+, f = 1 MHz VIN = 0 or VL Logic Supply Current Ground Current www.vishay.com 2 IL IGND 43 50 31 35 13 13 - 0.002 pC dB pF 1 7.5 -1 - 7.5 0.002 - 0.002 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Document Number: 71763 S-71009–Rev. E, 14-May-07 DG417L/418L/419L Vishay Siliconix SPECIFICATIONS (DUAL SUPPLY ± 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits - 55 to 125 °C Tempb Typc D Suffix Limits - 40 to 85 °C Mind Maxd Mind Maxd Unit -5 5 -5 5 V 18.5 21 Ω Analog Switch Analog Signal Rangee On-Resistance Switch Off Leakage Currenta Channel On Leakage Currenta VANALOG rON INO(off) INC(off) ICOM(off) ICOM(on) Full V+ = 5 V, V- = - 5 V INO, INC = 5 mA, VCOM = ± 3.5 V Room Full V+ = 5.5 , V- = - 5.5 V VCOM = ± 4.5 V VNO, VNC = ± 4.5 V Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 - 1.5 1.5 -1 1 V+ = 5.5 V, V- = - 5.5 V VNO, VNC = VCOM = ± 4.5 V 14 18.5 30 nA Digital Control Input Currenta IINL or IINH Full 0.05 Room Full 30 41 50 41 44 Room Full 16 32 36 32 33 tD DG419L Only, VNO, VNC = 3.5 V RL = 300 Ω, CL = 35 pF Room 10 tTRANS RL = 300 Ω, CL = 35 pF VS1 = ± 3.5 V, VS2 = ± 3.5 V Room 33 47 47 Charge Injectione QINJ Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 3 Off-Isolatione OIRR Room - 71 Channel-to-Channel Crosstalke XTALK Room - 76 Room 5.2 CON Room 15 Positive Supply Currente I+ Room Full 0.03 Negative Supply Currente I- Room Full - 0.002 Room Full Room Full 0.002 µA Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF Break-Before-Make Time Delaye TransitionTime Source Off Capacitancee Channel-On Capacitancee CNO(off) CNC(off) RL = 300 Ω, CL = 35 pF VNO, VNC = ± 3.5 V, See Figure 2 RL = 50 Ω, CL = 5 pF , f = 1 MHz f = 1 MHz ns pC dB pF Power Supplies VIN = 0 or VL Logic Supply Currente Ground Currente Document Number: 71763 S-71009–Rev. E, 14-May-07 IL IGND - 0.002 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 www.vishay.com 3 DG417L/418L/419L Vishay Siliconix SPECIFICATIONS (SINGLE SUPPLY 5 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf A Suffix Limits - 55 to 125 °C Tempb Typc Mind Maxd D Suffix Limits - 40 to 85 °C Mind Maxd Unit 5 5 V Ω Analog Switch Analog Signal Rangee On-Resistancee VANALOG rON Full V+ = 4.5 V, INO, INC = 5 mA VCOM = 1 V, 3.5 V Room Full 26 36.5 50 36.5 40.5 Room Full 37 49 60 49 54 Room Full 16 31 35 31 32 Dynamic Characteristics Turn-On Timee tON Turn-Off Timee tOFF Break-Before-Make Time Delaye Charge Injectione RL = 300 Ω, CL = 35 pF VNO, VNC = 3.5 V, See Figure 2 tD DG419L Only, VNO, VNC = 3.5 V RL = 300 Ω, CL = 35 pF Room 19 QINJ Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 0.4 Room Full 0.02 Room Full - 0.002 Room Full Room Full 0.002 ns pC Power Supplies Positive Supply Currente I+ Negative Supply Currente IVIN = 0 or VL Logic Supply Currente Ground Currente www.vishay.com 4 IL IGND - 0.002 1 7.5 -1 - 7.5 1 5 -1 -5 1 7.5 -1 - 7.5 1 5 µA -1 -5 Document Number: 71763 S-71009–Rev. E, 14-May-07 DG417L/418L/419L Vishay Siliconix SPECIFICATIONS (SINGLE SUPPLY 3 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V VL = 3 V, VIN = 2.0 V, 0.4 Vf A Suffix Limits - 55 to 125 °C Tempb Typc D Suffix Limits - 40 to 85 °C Mind Maxd Mind Maxd Unit 0 3 0 3 V 70 75 Ω Analog Switch Analog Signal Rangee On-Resistance Switch Off Leakage Currenta Channel On Leakage Currenta VANALOG rON INO(off) INC(off) ICOM(off) ICOM(on) Full V+ = 2.7 V, V- = 0 V Room INO, INC = 5 mA, VCOM = 0.5, 2.2 V Full V+ = 3.3 , V- = 0 V VCOM = 1, 2 V, VNO, VNC = 2, 1 V V+ = 3.3 V, V- = 0 V VNO, VNC = VCOM = 1, 2 V 70 80 47 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 Room Full -1 - 15 1 15 -1 - 10 1 10 - 1.5 1.5 -1 1 nA Digital Control Input Currenta IINL or IINH Full 0.005 Room Full 65 75 95 75 85 Room Full 26 41 45 41 43 tD DG419L Only, VNO, VNC = 1.5 V RL = 300 Ω, CL = 35 pF Room 33 Charge Injectione QINJ Vg = 0 V, Rg = 0 Ω, CL = 10 nF Room 1 Off-Isolatione OIRR Room - 71 Channel-to-Channel Crosstalke XTALK Room - 77 Room 5.6 Room 16 µA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Source Off Capacitancee CNO(off) CNC(off) Channel On Capacitancee CD(on) RL = 300 Ω, CL = 35 pF VNO, VNC = 1.5 V, See Figure 2 RL = 50 Ω, CL = 5 pF , f = 1 MHz f = 1 MHz ns pC dB pF Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71763 S-71009–Rev. E, 14-May-07 www.vishay.com 5 DG417L/418L/419L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 80 T = 25 °C IS = 5 mA r ON – On-Resistance (Ω) r ON – On-Resistance (Ω) 50 V+ = 2.7 V 40 30 V+ = 4.5 V 20 V+ = 10.8 V V+ = 2.7 V IS = 5 mA 70 A = 125 °C B = 85 °C C = 25 °C D = - 40 °C E = - 55 °C 60 A B 50 V+ = 4.5 V C 40 D E A B 30 C D 20 E 10 10 0 0 0 3 6 9 12 0 1 VCOM – Analog Voltage (V) 30 4 5 10000 V± =± 5V IS = 5 mA V±=±5V VIN = 0 V 20 I+ – Supply Current (nA) r ON – On-Resistance (Ω) 3 rON vs. Analog Voltage and Temperature rON vs. VCOM and Supply Voltage 25 2 VCOM – Analog Voltage (V) 125 °C 85 °C 15 25 °C - 40 °C 10 - 55 °C 1000 5 0 -5 -3 -1 1 3 100 - 55 5 - 35 - 15 VCOM – Analog Voltage (V) 25 45 65 85 105 125 105 125 Temperature (°C) rON vs. Analog Voltage and Temperature Supply Current vs. Temperature 10000 10 m V+ = 12 V V- = 0 V 1m 1000 100 µ Leakage Current (pA) I+ – Supply Current (nA) 5 10 µ 1µ 100 n ICOM(on) 100 ICOM(off) 10 10 n 1 10 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency www.vishay.com 6 1 - 55 - 35 - 15 5 25 45 65 85 Temperature (°C) Leakage Current vs. Temperature Document Number: 71763 S-71009–Rev. E, 14-May-07 DG417L/418L/419L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 90 80 t ON , t OFF – Switching Time (ns) Leakage Current (pA) V+ = 12 V V- = 0 V 20 ICOM(off)/ICOM(on) 0 INO(off)/INC(on) - 20 70 tON V+ = 3 V 60 50 40 tON V+ = 5 V tON V+ = 12 V 30 20 10 - 40 0 2 4 6 8 10 0 - 55 12 tOFF V+ = 12 V - 35 - 15 5 VCOM, VNO, VNC – Analog Voltage (V) 45 65 85 105 125 Switching Time vs. Temperature and Single Supply Voltage 80 10 Loss 70 - 10 60 tON V+ = ± 3 V 50 40 tON V+ = ± 5 V 30 tON V+ = ± 6 V 20 tOFF V+ = ± 3 V Loss, OIRR, X TALK (dB) t ON , t OFF - Switching Time (ns) 25 Temperature (°C) Leakage vs. Analog Voltage - 30 - 50 OIRR - 70 V+ = 3 V V- = 0 V RL = 50 Ω - 90 10 tOFF V+ = ± 6 V 0 - 55 - 35 - 15 5 25 45 tOFF V+ = ± 5 V 65 85 105 - 110 125 0.1 1 10 Temperature (°C) 12 10 VL = V+ V+ = 12 V 8 Q – Charge Injection (pC) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 6 4 V+ = 5 V V=± 5V 2 0 V+ = 3 V -2 -4 -6 -8 0.2 0.0 2.0 1000 Insertion Loss, Off -Isolation Crosstalk vs. Frequency 2.0 1.8 100 Frequency (Hz) Switching Time vs. Temperature and Dual Supply Voltage VT – Switching Threshold (V) tOFF V+ = 3 V tOFF V+ = 5 V - 10 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 71763 S-71009–Rev. E, 14-May-07 6.0 - 12 -6 -4 -2 0 2 4 6 8 10 12 VCOM – Analog Voltage (V) Charge Injection vs. Analog Voltage) www.vishay.com 7 DG417L/418L/419L Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS VL V+ Logic Input VINH tr < 5 ns tf < 5 ns 50 % VINL Switch Input VIN VL Switch Output V+ NO or NC COM tOFF VOUT VOUT IN RL 300 Ω V- GND CL 35 pF 90 % 0.9 x VOUT 0V Switch Output tON VCL (includes fixture and stray capacitance) RL VOUT = VIN Note: RL + rON Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time VL V+ VL VNO VNC Logic Input V+ tr < 5 ns tf < 5 ns VINL COM NO VINH VO NC RL 300 Ω IN GND V- CL 35 pF VNC = VNO VO Switch Output 90 % 0V tD tD VCL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG419L) www.vishay.com 8 Document Number: 71763 S-71009–Rev. E, 14-May-07 DG417L/418L/419L Vishay Siliconix TEST CIRCUITS +5V VL + 15 V V+ NO or NC Logic VINH Input VINL COM VS1 VO NC or NO VS2 RL 300 Ω IN tr < 5 ns tf < 5 ns 50 % tTRANS CL 35 pF tTRANS VS1 V01 V- GND 90 % Switch Output 10 % V02 VS2 VCL (includes fixture and stray capacitance) RL VO = VS RL + rON Figure 4. Transition Time (DG419L) VL V+ VL V+ ΔVO VO Rg COM NO or NC IN Vg IN VO OFF ON CL 1 nF Q = ΔVO x CL V- GND OFF IN dependent on switch configuration Input polarity determined by sense of switch. VVIN = 0 - V+ Figure 5. Charge Injection VL C V+ C VL VS VIN NO or NC V+ COM Rg = 50 Ω 50 Ω IN 0 V or 2.4 V NC or NO VOUT GND XTA LK Isolation = 20 log V- C VOUT VIN V- C = RF bypass Figure 6. Crosstalk (DG419L) Document Number: 71763 S-71009–Rev. E, 14-May-07 www.vishay.com 9 DG417L/418L/419L Vishay Siliconix TEST CIRCUITS V+ VL C C NO or NC COM Rg = 50 Ω RL 50 Ω IN 0 V, 2.4 V GND V- C VOff Isolation = 20 log C = RF Bypass VCOM VNO/NC Figure 7. Off Isolation VL V+ C C VL V+ COM Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V NO or NC GND V- C f = 1 MHz V- Figure 8. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71763. www.vishay.com 10 Document Number: 71763 S-71009–Rev. E, 14-May-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1