New Product DG451/DG452/DG453 Vishay Siliconix High Voltage 4-Ω Quad SPST CMOS Analog Switch DESCRIPTION FEATURES The DG451 series has four independently selectable high voltage (44 V) SPST switches, each with a typical on resistance of 4 Ω and a typical flatness of 0.2 Ω, ideal parameters for low distortion audio signal switching. The DG451 (NC) and DG452 (NO) are identical except for the digital logic control input, which is inverted as shown in the Truth Table. The DG453 has two normally closed and two normally open switches. These are high voltage switches that are fully specified with dual supplies at ± 5 V and ± 15 V and a single supply of 12 V and operating with ultra low power dissipation (18 µW). Fast switching speeds coupled with high signal bandwidth makes these parts suitable for video switching applications. All digital inputs have 0.8 V and 2.4 V logic thresholds ensuring low voltage TTL/CMOS compatibility. Each switch conducts equally well in both directions when on and can handle an input signal range that extends to the supply voltage rails. The DG451, DG452, and DG453 are pin compatible with the DG411, DG412, and DG413. • • • • • • • • Low on-resistance (4 Ω typical) On-resistance flatness (0.2 Ω typical) 100 mA continuous current RoHS COMPLIANT 44 V supply maximum rating ± 15 V analog signal range Fully specified at supply voltages of ± 5 V, 12 V and ± 15 V Ultra low power dissipation of (18 µW) Fast switching speed: - ton 80 ns - toff 60 ns • TTL/CMOS compatible • ESD protection 2 kV • Pin compatible with DG411, DG412, and DG413 APPLICATIONS • • • • • • • Audio and video signal switching Precision automatic test equipment Precision data acquisition Relay replacement Communications systems Automotive and avionics applications Sample and hold systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG451 DG453 TSSOP16 and SOIC16 TSSOP16 and SOIC16 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Top View TRUTH TABLE TRUTH TABLE Logic DG451 DG452 Logic SW1, SW4 0 ON OFF 0 OFF ON 1 OFF ON 1 ON OFF Document Number: 74470 S-81306-Rev. D, 09-Jun-08 SW2, SW3 www.vishay.com 1 New Product DG451/DG452/DG453 Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number 16-Pin TSSOP DG451EQ-T1-E3 DG452EQ-T1-E3 DG453EQ-T1-E3 16-Pin Narrow SOIC DG451EY-T1-E3 DG452EY-T1-E3 DG453EY-T1-E3 DG451/DG452/DG453 - 40 °C to 125 °Ca Notes: a. - 40 to 85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Limit V+ to V- Unit 44 GND to V- 25 VL V (GND - 0.3) to (V+) + 0.3 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Digital Inputsa, VS, VD Continuous Current (Any Terminal) 100 Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 300 Storage Temperature mA - 65 to 150 TSSOPc 450 16-Pin Narrow SOICd 600 16-Pin TSSOP 178 16-Pin Narrow SOIC 125 16-Pin Power Dissipation (Package)b Thermal Resistance (Package)b ESD (HBM) °C mW C/W 2 kV Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 5.6 mW/°C above 70 °C. d. Derate 8.0 mW/°C above 75 °C. SPECIFICATIONS FOR DUAL SUPPLIES Parameter Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Va Temp.b VANALOG Full RON IS = - 10 mA, VD = - 10 V to + 10 V Room Full 3.8 5.3 8.3 ΔRON IS = - 10 mA, VD = ± 10 V Room Full 0.12 0.5 1 0.5 0.5 Room Full 0.25 0.5 0.5 0.5 0.5 Room Full ± 0.1 - 0.5 - 20 0.5 20 - 0.5 - 2.5 0.5 2.5 Room Full ± 0.1 - 0.5 - 20 0.5 20 - 0.5 - 2.5 0.5 2.5 Room Full ± 0.1 - 0.4 - 40 0.4 40 -1 -5 1 5 Symbol - 40 to 125 °C Typ.c Min.d - 40 to 85 °C Max.d Min.d 15 - 15 Max.d Unit 15 V 5.3 7.3 Ω Analog Switch On-Resistance On-Resistance Match On-Resistance Flatness Switch Off Leakage Current Channel On Leakage Current www.vishay.com 2 RFLATNESS IS = - 10 mA, VD = - 5 V, 0 V, + 5 V IS(off) ± Analog Signal Rangee VD = ± 10 V, VS = 10 V ID(off) ID(on) VS = VD = ± 10 V - 15 nA Document Number: 74470 S-81306-Rev. D, 09-Jun-08 New Product DG451/DG452/DG453 Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Parameter Symbol Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Va Temp.b Typ.c Min.d Max.d Min.d Max.d - 40 to 125 °C - 40 to 85 °C Unit Digital Control Input Current, VIN Low IIL VIN Under Test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Input Current, VIN High IIH VIN Under Test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Input Capacitancee CIN f = 1 MHz Room 7 Turn-On Time tON Room Full 88 118 160 118 144 Turn-Off Time tOFF RL = 300 Ω, CL = 35 pF VS = ± 10 V, See Figure 2 Room Full 69 97 120 97 112 µA pF Dynamic Characteristics Break-Before-Make Time Delay tD DG453 only, VS = 10 V RL = 300 Ω, CL = 35 pF Room 18 Charge Injectione Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 22 Room - 60 Room - 85 Off Isolation e OIRR Channel-to-Channel Crosstalke XTALK Source Off Capacitancee Drain Off Capacitance e Channel On Capacitancee Total Harmonic Distortione RL = 50 Ω, CL = 5 pF f = 1 MHz CS(off) Room 31 CD(off) Room 34 Room 103 Room 0.04 Room Full 0.001 Room Full - 0.001 Room Full 0.001 Room Full - 0.001 f = 1 MHz CD(on) THD Signal = 5 VRMS, 20 Hz to 20 kHz, RL = 600 Ω ns pC dB pF % Power Supplies Power Supply Current I+ Negative Supply Current I- Logic Supply Current IL Ground Current V+ = 16.5 V, V- = - 16.5 V VL = 5 V, VIN = 0 or 5 V IGND 0.5 5 - 0.5 -5 0.5 5 - 0.5 -5 0.5 5 0.5 5 - 0.5 -5 - 0.5 -5 - 40 to 125 °C - 40 to 85 °C µA SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions Unless Specified V+ = 5 V, V- = - 5 V Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Va Temp.b Typ.c Min.d Max.d Min.d Max.d Unit -5 5 -5 5 V Analog Switch Analog Signal Rangee VANALOG Full RON V+ = + 5 V, V- = - 5 V IS = - 10 mA, VD = - 3.5 V to + 3.5 V Room Full 3.8 11 15 11 12 ΔRON V+ = + 5 V, V- = - 5 V, IS = - 10 mA, VD = ± 3.5 V Room Full 0.13 0.5 1 0.5 0.5 Turn-On Timee tON Room Full 170 200 296 200 256 Turn-Off Timee tOFF RL = 300 Ω, CL = 35 pF VS = 3 V, See Figure 2 Room Full 66 96 124 96 113 tD DG451 only, VS = 3 V RL = 300 Ω, CL = 35 pF Room Full 98 Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Full 8 On-Resistance On-Resistance Match Ω Dynamic Characteristics Break-Before-Makee Time Delay Charge Injectione Document Number: 74470 S-81306-Rev. D, 09-Jun-08 ns pC www.vishay.com 3 New Product DG451/DG452/DG453 Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions Unless Specified V+ = 5 V, V- = - 5 V Parameter VL = 5 V, VIN = 2.4 V, 0.8 Va - 40 to 125 °C Temp.b Typ.c Room Full 0.001 Room Full - 0.001 IL Room Full 0.001 IGND Room Full - 0.001 Symbol Min.d Max.d - 40 to 85 °C Min.d Max.d Unit Power Supplies Power Supply Current I+ Negative Supply Current IVL = 5 V, VIN = 0 or 5 V Logic Supply Current Ground Current - 0.5 -5 - 0.5 -5 - 0.5 -5 - 0.5 -5 - 0.5 -5 µA - 0.5 -5 - 0.5 -5 - 0.5 -5 - 40 to 125 °C - 40 to 85 °C SPECIFICATIONS FOR UNIPOLAR SUPPLIES Parameter Test Conditions Unless Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Va Temp.b VANALOG Full RON IS = - 10 mA, VD = 0 V to + 10 V Room Full 5.5 ΔRON IS = - 10 mA, VD = + 10 V Room Full 0.14 0.5 1 0.5 0.5 RFLATNESS IS = - 10 mA, VD = 0 V, + 5 V, + 10 V Room Full 0.94 1.5 1.7 1.5 1.5 Room Full 132 162 238 162 210 Room Full 61 91 117 91 105 Symbol Typ.c Min.d Max.d Min.d Max.d Unit 12 12 V 8.1 12.4 8.1 10.4 Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match On-Resistance Flatness Ω Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay e Charge Injection RL = 300 Ω, CL = 35 pF VS = 8 V, See Figure 2 tD DG453 only, VS = 8 V RL = 300 Ω, CL = 35 pF Room 70 Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 1 ns pC Power Supplies Power Supply Current I+ Room Full 0.001 Negative Supply Current I- Room Full - 0.001 Logic Supply Current IL Room Full 0.001 IGND Room Full - 0.001 VL = 5 V, VIN = 0 or 5 V Ground Current 0.5 5 - 0.5 -5 0.5 5 - 0.5 -5 0.5 5 - 0.5 -5 0.5 5 µA - 0.5 -5 Notes: a. VIN = input voltage to perform proper function. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 74470 S-81306-Rev. D, 09-Jun-08 New Product DG451/DG452/DG453 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, VL = 5 V, unless otherwise noted 8 20 RON - On-Resistance (Ω) ± 5.0 V RON - On-Resistance (Ω) TA = + 25 °C IS = 10 mA TA = + 25 °C IS = 10 mA 7 6 ± 10 V 5 ± 12 V ± 13.5 V ± 15 V ±8V 4 ± 20 V 3 15 V+ = 5 V V+ = 8 V 10 V+ = 10.8 V V+ = 12 V V+ = 15 V 5 V+ = 20 V V+ = 36 V 2 1 - 20 0 - 15 - 10 -5 0 5 10 15 0 20 4 8 20 24 28 32 36 12 10 V+ = + 15 V V- = - 15 V IS = 10 mA 9 V+ = + 12 V V- = 0 V IS = 10 mA 11 10 RON - On-Resistance (Ω) 8 RON - On-Resistance (Ω) 16 On-Resistance vs. VD and Single Supply Voltage On-Resistance vs. VD and Dual Supply Voltage 7 6 + 125 °C 5 + 85 °C 4 + 25 °C 3 - 40 °C 9 + 125 °C 8 + 85 °C 7 6 + 25 °C 5 2 4 1 3 0 - 15 12 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) - 40 °C 2 - 10 -5 0 5 10 0 15 2 VCOM - Analog Voltage (V) 4 6 8 10 12 VD - Analog Voltage (V) On-Resistance vs. VD and Temperature On-Resistance vs. VD and Temperature 100 000 10 000 ID (off) Leakage Current (pA) Leakage Current (pA) 10 000 1000 100 ID (on) IS (off) ID (off) 1000 100 ID (on) IS (off) 10 10 V+ = + 13.2 V V- = 0 V V+ = + 15 V V- = - 15 V 1 - 60 - 40 - 20 0 20 40 60 80 100 120 Temperature (°C) Leakage Current vs. Temperature Document Number: 74470 S-81306-Rev. D, 09-Jun-08 140 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 5 New Product DG451/DG452/DG453 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, VL = 5 V, unless otherwise noted 140 275 CL =1 nF Drain 120 225 80 tON V = ± 5 V 200 V+ = + 5 V V- = - 5 V 60 tON/tOFF (ns) Q - Charge Injection (pC) 250 V+ = + 15 V V- = - 15 V 100 40 20 0 175 150 125 tON V = ± 15 V 100 - 20 75 V+ = + 12 V V- = - 0 V - 40 - 60 - 20 - 15 - 10 -5 0 5 10 tOFF V = ± 5 V tOFF V = ± 15 V 50 15 25 - 55 20 - 35 - 15 5 25 45 65 85 105 125 Temperature (°C) Analog Voltage (V) Switching Time vs. Temperature and Dual Supply Voltage Charge Injection vs. Analog Voltage 350 200 180 T = 25 °C 300 160 250 tON/tOFF (ns) tON/tOFF (ns) 140 120 100 tON tOFF 80 200 tON V = + 12 V 150 100 tOFF V = + 12 V 60 50 40 0 - 55 20 4 6 8 10 12 14 16 18 20 - 35 - 15 25 45 65 85 105 125 Temperature (°C) Dual Supply Voltage (V) Switching Time vs. Temperature and Single Supply Voltage Switching Time vs. Dual Supply Voltage 350 3.0 300 2.5 V T - Switching Threshold (V) T = 25 °C 250 tON/tOFF (ns) 5 200 150 tON 100 tOFF with VL = 5 V 2.0 1.5 1.0 0.5 50 0 0.0 5 www.vishay.com 6 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 Single Supply Voltage (V) Supply Voltage (V) Switching Time vs. Single Supply Voltage Switching Threshold vs. Supply Voltage 40 Document Number: 74470 S-81306-Rev. D, 09-Jun-08 New Product DG451/DG452/DG453 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, VL = 5 V, unless otherwise noted 100 m 10 DG451/DG452/DG453 V+ = + 15 V V- = - 15 V 10 m 0 IGND I+ 100 µ Loss, OIRR, X Talk (dB) Supply Current (A) 1m 10 µ IL I- 1µ Loss - 10 100 n - 20 - 30 - 40 OIRR - 50 - 60 XTalk - 70 - 80 V+ = + 15 V V- = - 15 V R L = 50 Ω - 90 10 n - 100 1n 10 100 1k 10 k 100 k 1M - 110 100 k 10 M 1M 10 M 100 M 1G Frequency (Hz) Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Insertion Loss, Off-Isolation, Crosstalk vs. Frequency TEST CIRCUITS +5V + 15 V Logic Input tr < 5 ns tf < 5 ns 3V 50 % 0V V+ VL ± 10 V S tOFF D Switch Input* VO VS VO RL 300 Ω V- GND CL 35 pF 90 % 90 % IN 0V tON - 15 V Note: CL (includes fixture and stray capacitance) Logic input waveform is inverted for switches that have the opposite logic sense control RL VO = V S RL + R DS(on) Figure 1. Switching Time +5V + 15 V Logic Input V+ VL VS1 S1 D1 VS2 Switch Output IN2 RL1 300 Ω V- GND 90 % VO2 D2 S2 50 % 0V VS1 VO1 VO1 IN1 3V RL2 300 Ω CL2 35 pF CL1 35 pF Switch Output 0V VS2 VO2 0V 90 % tD tD - 15 V CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make (DG453) Document Number: 74470 S-81306-Rev. D, 09-Jun-08 www.vishay.com 7 New Product DG451/DG452/DG453 Vishay Siliconix TEST CIRCUITS ΔVO Rg +5V + 15 V VL V+ S VO INX OFF D IN Vg ON OFF VO CL 1 nF 3V V- GND OFF INX ON Q = ΔVO x CL OFF - 15 V Figure 3. Charge Injection +5V + 15 V C C VL V+ D1 S1 VS Rg = 50 Ω 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC 0 V, 2.4 V RL IN2 GND XTALK Isolation = 20 log V- C VO - 15 V VS C = RF bypass Figure 4. Crosstalk +5V + 15 V C C VL V+ S VS +5V C VO D C VL Rg = 50 Ω 0 V, 2.4 V + 15 V V+ S RL 50 Ω IN GND V- Meter IN C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D - 15 V GND Off Isolation = 20 log V- VO C VS C = RF Bypass Figure 5. Off-Isolation - 15 V Figure 6. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74470. www.vishay.com 8 Document Number: 74470 S-81306-Rev. D, 09-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1