SPICE MODEL: DMMT3904W DMMT3904W MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Intrinsically Matched NPN Pair (Note 1) Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) Lead Free/RoHS Compliant (Note 3) SOT-363 A C2 • • • • • • • B2 Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.015 grams (approximate) Maximum Ratings E1 B C Mechanical Data • • E2 B1 C1 H K M J D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 α 0.25 8° All Dimensions in mm @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Power Dissipation (Note 2) Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range Notes: 1. 2. 3. Built with adjacent die from a single wafer. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. DS30311 Rev. 9 - 2 1 of 4 www.diodes.com DMMT3904W © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage OFF CHARACTERISTICS (Note 4) B V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = 100µA, IC = 1.0mA, IC = 10mA, IC = 50mA, IC = 100mA, VCE(SAT) ⎯ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.65 ⎯ 0.85 0.95 V ΔVBE ⎯ 1 mV VCE = 5V, IC = 2mA Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kΩ Voltage Feedback Ratio hre 0.5 8 x 10 Small Signal Current Gain hfe 100 400 ⎯ Output Admittance hoe 1.0 40 μS Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz NF ⎯ 5.0 dB VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns Storage Time ts ⎯ 200 ns Fall Time tf ⎯ 50 ns ON CHARACTERISTICS (Note 4) DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) Base-Emitter Saturation Voltage (Note 5) Base-Emitter Voltage Matching VBE(SAT) VCE = VCE = VCE = VCE = VCE = 1.0V 1.0V 1.0V 1.0V 1.0V B B IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA B B SMALL SIGNAL CHARACTERISTICS Noise Figure -4 VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: 4. 5. VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Short duration pulse test used to minimize self-heating effect. The DC current gain, hFE, (matched at IC = 10mA and VCE = 1.0V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%. DS30311 Rev. 9 - 2 2 of 4 www.diodes.com DMMT3904W © Diodes Incorporated 15 200 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) Note 2 150 100 50 10 5 Cibo Cobo 0 0.1 0 0 25 50 75 100 125 150 175 200 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1 1000 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IC IB = 10 TA = 125°C 100 TA = +25°C TA = -25°C 10 0.1 VCE = 1.0V 0.01 1 0.1 1 10 100 0.1 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) IC IB = 10 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30311 Rev. 9 - 2 3 of 4 www.diodes.com DMMT3904W © Diodes Incorporated Ordering Information Notes: 6. (Note 6) Device Packaging Shipping DMMT3904W-7-F SOT-363 3000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K4A = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Data Code Key Year Code Month Code 2002 N Jan 1 2003 P Feb 2 2004 R Mar 3 2005 S Apr 4 2006 T May 5 2008 V 2007 U Jun 6 Jul 7 Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30311 Rev. 9 - 2 4 of 4 www.diodes.com DMMT3904W © Diodes Incorporated