SPICE MODEL: DMN2004DWK DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Lead-free Green NEW PRODUCT Features · · · · · · · · · · · Dual N-Channel MOSFET SOT-363 Low On-Resistance Low Gate Threshold Voltage Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° A Low Input Capacitance D2 G1 S1 Fast Switching Speed B C Low Input/Output Leakage Ultra-Small Surface Mount Package S2 Lead Free By Design/RoHS Compliant (Note 2) D1 G2 G H ESD Protected up to 2KV "Green" Device (Note 4) K M Qualified to AEC-Q101 standards for High Reliability J Mechanical Data · · Case: SOT-363 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking: See Page 2 D Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 F L 0.40 All Dimensions in mm D2 G1 S1 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 ESD protected up to 2KV Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) Maximum Ratings S2 G2 D1 @ TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady State TA = 25°C TA = 85°C Symbol Value Units VDSS 20 V VGSS ±8 V ID 540 390 mA Pulsed Drain Current (Note 3) IDM 1.5 A Total Power Dissipation (Note 1) Pd 200 mW RqJA 625 °C/W Tj, TSTG -65 to +150 °C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width £10mS, Duty Cycle £1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30935 Rev. 2 - 2 1 of 4 www.diodes.com DMN2004DWK ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20 ¾ ¾ V VGS = 0V, ID = 10mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 1 mA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS ¾ ¾ ±1 mA VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ¾ 1.0 V VDS = VGS, ID = 250mA RDS (ON) ¾ 0.4 0.5 0.7 0.55 0.70 0.9 W VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 ¾ ¾ ms VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 150 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 20 pF OFF CHARACTERISTICS (Note 5) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Notes: 1000 VGS = 2.2V VDS = 10V Pulsed 900 VGS = 2.0V 800 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (A) VDS = 16V, VGS = 0V f = 1.0MHz 5. Short duration test pulse used to minimize self-heating effect. 0.9 VGS = 1.8V 0.6 VGS = 1.6V VGS = 1.4V 0.3 700 600 500 400 TA = 150° C 300 200 TA = 85° C TA = 25° C 100 VGS = 1.2V TA = -55° C 0 0.4 0 0 1 2 5 4 3 0.8 1.2 1.6 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1 1 VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Electrical Characteristics 0.9 VDS = 10V 0.8 Pulsed VGS = 10V Pulsed ID = 1mA 0.7 TA = 125° C 0.6 TA = 150° C TA = 85° C 0.5 0.4 0.3 0.2 TA = -55° C 0.1 0 -75 TA = 25° C TA = 0° C TA = -25° C 0.1 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature DS30935 Rev. 2 - 2 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 2 of 4 www.diodes.com DMN2004DWK 1 1.0 TA = 25°C NEW PRODUCT VGS = 5V Pulsed 0.9 0.8 TA = 125° C TA = 150° C TA = 85° C 0.7 0.6 ID = 540mA 0.5 0.4 0.3 TA = -55° C TA = 25° C TA = 0° C 0.2 TA = -25° C 0.1 0 0.1 0.2 0.6 0.4 2 0 1.0 0.8 6 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 1 0.5 Tj = 25°C 0.9 0.8 0.4 VGS = 1.8V VGS = 4.5V, ID = 540mA 0.7 0.3 0.6 0.5 VGS = 10V, ID = 280mA 0.2 VGS = 2.5V 0.4 0.1 VGS = 4.5V 0.3 0.2 0.4 0.2 0 0.8 0.6 1 0 -50 1.2 -25 0 25 50 75 100 125 150 Tj, JUNCTION TEMPERATURE (° C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 10000 1 1000 IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) VGS = 0V Tj = 150°C 100 Tj = 100°C 10 1 TA = 150° C 0.1 TA = 125° C TA = 85° C TA = 25° C 0.01 TA = 0° C TA = -25° C TA = -55° C 0.1 2 4 6 8 10 12 14 16 18 20 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage DS30935 Rev. 2 - 2 3 of 4 www.diodes.com 0 1 0.5 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage DMN2004DWK TA = -55° C VGS = 10V f = 1MHz VGS = 0V 100 Ciss TA = 25° C C, CAPACITANCE (pF) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) NEW PRODUCT 120 1 TA = 85° C 0.1 TA = 150° C 80 60 40 Coss 20 Crss 0.01 1 10 0 1000 100 0 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current Ordering Information Notes: 4 2 8 6 10 12 14 16 18 20 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation (Note 6) Device Packaging Shipping DMN2004DWK-7 SOT-363 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 NAB YM S2 G2 NAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September D1 Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30935 Rev. 2 - 2 4 of 4 www.diodes.com DMN2004DWK