A Product Line of Diodes Incorporated DMN4034SSD ADVANCE INFORMATION 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • ID RDS(on) TA = 25°C 34mΩ @ VGS= 10V 6.3A 59mΩ @ VGS= 4.5V 4.8A 40V Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications • Case: SO-8 This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) • Motor control • Backlighting • DC-DC Converters • Power management functions SO-8 D1 G1 D2 G2 S1 Top View Ordering Information Product DMN4034SSD-13 Note: Top View S2 Equivalent Circuit (Note 1) Marking N4034SD Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information N4034SD YY WW DMN4034SSD Document Number DS32105 Rev 1 - 2 = Manufacturer’s Marking N4034SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53) 1 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN4034SSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5) Symbol VDSS VGS ID IDM IS ISM Value 40 ±20 6.3 5.0 4.8 24.8 3.3 24.8 Unit V V Value 1.25 10.0 1.80 14.3 2.14 17.2 100 70 58 55 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Notes 3 & 6) Power dissipation Linear derating factor (Notes 3 & 7) PD (Notes 4 & 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Notes 3 & 6) (Notes 3 & 7) (Notes 4 & 6) (Notes 6 & 8) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t ≤ 10 sec. 5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. For a dual device with one active die. 7. For a device with two active die running at equal power. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN4034SSD Document Number DS32105 Rev 1 - 2 2 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ID Drain Current (A) RDS(on) Limited 10 1 DC 100m 1s 100ms 10m 1m 100m 10ms Single Pulse T amb=25°C 1ms 100µs One active die 1 10 VDS Drain-Source Voltage (V) Max Power Dissipation (W) Thermal Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Two active die One active die 0 20 80 100 120 140 160 Maximum Power (W) Single Pulse T amb=25°C 100 Pulse Width (s) One active die 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS32105 Rev 1 - 2 60 Derating Curve 110 T amb=25°C 100 One active die 90 80 70 D=0.5 60 50 40 Single Pulse D=0.2 30 20 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k DMN4034SSD 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION DMN4034SSD 3 of 8 www.diodes.com Pulse Power Dissipation March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN4034SSD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.5 ±100 V μA nA ID = 250μA, VGS= 0V VDS= 40V, VGS= 0V VGS= ±20V, VDS= 0V VGS(th) 1.0 RDS (ON) ⎯ Forward Transconductance (Notes 9 & 10) Diode Forward Voltage (Note 9) Reverse recovery time (Note 10) Reverse recovery charge (Note 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 11) Total Gate Charge (Note 11) Gate-Source Charge (Note 11) Gate-Drain Charge (Note 11) Turn-On Delay Time (Note 11) Turn-On Rise Time (Note 11) Turn-Off Delay Time (Note 11) Turn-Off Fall Time (Note 11) gfs VSD trr Qrr ⎯ ⎯ S V ns nC ID= 250μA, VDS= VGS VGS= 10V, ID= 6A VGS= 4.5V, ID= 5A VDS= 15V, ID= 6A IS= 6A, VGS= 0V ⎯ 3.0 0.034 0.059 ⎯ 1.1 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 9) ⎯ 0.023 0.039 20.5 0.87 11.2 4.8 Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 453 79.1 40.5 4.9 10 1.8 2.4 2.7 2.7 14 6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC nC ns ns ns ns Notes: Ω Test Condition IS= 2, di/dt= 100A/μs VDS= 20V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 20V ID= 6A VDD= 20V, VGS= 10V ID= 1A, RG ≅ 6.0Ω 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. DMN4034SSD Document Number DS32105 Rev 1 - 2 4 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics ID Drain Current (A) T = 150°C 4.5V 10 3.5V 1 3V 0.1 10V 4V 4V ID Drain Current (A) 10V T = 25°C VGS 0.01 10 3.5V 3V 1 2.5V 0.1 2V VGS 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1 T = 150°C 0.1 T = 25°C 0.01 1E-3 1 2 3 4 5 VGS Gate-Source Voltage (V) Typical Transfer Characteristics 10 3V T = 25°C VGS 3.5V 1 4V 0.1 4.5V 10V 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN4034SSD Document Number DS32105 Rev 1 - 2 VGS = 10V 1.4 ID = 12A RDS(on) 1.2 1.0 0.8 0.6 0.4 -50 VGS(th) VGS = VDS ID = 250uA 0 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature ISD Reverse Drain Current (A) ID Drain Current (A) VDS = 10V Normalised RDS(on) and VGS(th) 1.6 10 RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION DMN4034SSD 10 1 T = 150°C T = 25°C 0.1 Vgs = 0V 0.01 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4034SSD ADVANCE INFORMATION Typical Characteristics - continued C Capacitance (pF) VGS = 0V f = 1MHz 500 CISS 400 COSS 300 CRSS 200 100 0 0.1 1 10 VGS Gate-Source Voltage (V) 10 600 8 6 4 VDS = 20V 2 0 ID = 6A 0 2 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN4034SSD Document Number DS32105 Rev 1 - 2 Switching time test circuit 6 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN4034SSD Package Outline Dimensions θ DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches DMN4034SSD Document Number DS32105 Rev 1 - 2 7 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMN4034SSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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