– E T E L O S B O – DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-92 Die 240V 4.0Ω 600mA DN2624N3 DN2624ND Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Package Options Converters Linear amplifiers Constant current sources Power supply circuits Telecom Absolute Maximum Ratings Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* SGD TO-92 ± 20V -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 8-9 8 DN2624 Thermal Characteristics Package ID (continuous)* TO-92 ID (pulsed) 300mA Power Dissipation @ TC = 25°C θjc θja °C/W °C/W 1.0W 125 170 1.0A – E T E L O S B O – Electrical Characteristics IDR* IDRM 300mA 1.0A * ID (continuous) is limited by max rated Tj. (@ 25°C unless otherwise specified) Symbol Parameter BVDSX Drain-to-Source Breakdown Voltage VGS(OFF) Gate-to-Source OFF Voltage ∆VGS(OFF) Min Typ Max Unit 240 Conditions V VGS = -5V, ID = 100µA –3 V VDS = 25V, ID= 10µA Change in VGS(OFF) with Temperature 4.5 mV VDS = 25V, ID= 10µA IGSS Gate Body Leakage Current 100 nA VGS = ± 20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 10 µA VGS = -10V, VDS = Max Rating 1 mA VGS = -10V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 0V, VDS = 25V –1 IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source ON-State Resistance 4.0 Ω VGS = 0V, ID = 200mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°C VGS = 0V, ID = 200mA GFS Forward Transconductance mhos ID = 300mA, VDS = 10V CISS Input Capacitance 720 COSS Common Source Output Capacitance 100 CRSS Reverse Transfer Capacitance 30 td(ON) Turn-ON Delay Time 15 30 tr Rise Time 22 44 td(OFF) Turn-OFF Delay Time 22 44 tf Fall Time 30 60 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 600 400 VGS = -10V, VDS = 25V pF f = 1 MHz VDD = 25V, ns ID = 200mA, RGEN = 10Ω 1.8 600 V VGS = -10V, ISD = 200mA ns VGS = -10V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 8-10 DN2624 – E T E L O S B O – Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 VGS = 0V 8 VGS = -3.5V RDS(on) (ohms) BVDSS (normalized) 1.1 1.0 6 4 2 0 0.9 -50 150 100 50 0 0 0.2 0.4 0.6 0.8 1.0 TJ (°C) ID (amps) Transfer Characteristics V(th) and RDS Variation with Temperature 8 2.0 1.0 0.8 RDS (ON) @ VGS = 0V, ID = 200mA VGS(th) (normalized) ID (amperes) TA = 25°C TA = 125°C 0.6 0.4 1.6 1.4 1.2 1.2 0.8 VGS(OFF) @ VDS = 25V, ID = 10µA 1.0 0.2 0.4 0.8 0 0 0 -1 -2 -3 1 2 -50 0 50 100 150 Tj (°C) VGS (Volts) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 800 4 VGS = -10V CISS 2 VGS (volts) C (picofarads) 600 400 VDS = 25V 0 ID = 30mA 700pF -2 200 -4 620pf COSS CRSS 0 -6 0 10 20 30 40 0 VDS (Volts) 1 2 3 4 QC (Nanocoulombs) 8-11 5 RDS(ON) (normalized) 1.6 TA = -55°C VDS = 10V DN2624 – E T E L O S B O – Typical Performance Curves Output Characteristics 2.0 Saturation Characteristics 2.0 1.6 1.6 VGS = 1.0V 1.2 ID (amperes) ID (amperes) VGS = 1.0V 0.5V 0.8 0V -0.5V 0.4 1.2 0.5V 0.8 0V 0.4 -0.5V -1.0V -1.0V 0 0 0 20 10 40 30 50 0 2 4 VDS (volts) Transconductance vs. Drain Current 8 10 Power Dissipation vs. Temperature 1.0 2.0 VDS = 10V TA = -55°C 1.6 0.8 TO-92 TA = 25°C 1.2 PD (watts) GFS (siemens) 6 VDS (volts) TA = 125°C 0.8 0.4 0.6 0.4 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 0 25 50 ID (amperes) 75 100 125 150 TA(°C) Maximum Rated Safe Operating Area Thermal Response Characteristics 1.0 1.0 Thermal Resistance (normalized) ID (amperes) TO-92 (pulsed) 0.1 TO-92 (DC) 0.01 TA = 25°C 0.001 1 0.8 0.6 0.4 TO-92 PD = 1.0W TA = 25°C 0.2 0 10 100 1000 0.001 VDS (volts) 0.01 0.1 tp (seconds) 8-12 1 10