NSC DP8422V-33 Microcmos programmable 256k/1m/4m dynamic ram controller/driver Datasheet

DP8420V/21V/22V-33, DP84T22-25 microCMOS
Programmable 256k/1M/4M Dynamic RAM
Controller/Drivers
General Description
Features
The DP8420V/21V/22V-33, DP84T22-25 dynamic RAM
controllers provide a low cost, single chip interface between
dynamic RAM and all 8-, 16- and 32-bit systems. The
DP8420V/21V/22V-33, DP84T22-25 generate all the required access control signal timing for DRAMs. An on-chip
refresh request clock is used to automatically refresh the
DRAM array. Refreshes and accesses are arbitrated on
chip. If necessary, a WAIT or DTACK output inserts wait
states into system access cycles, including burst mode accesses. RAS low time during refreshes and RAS precharge
time after refreshes and back to back accesses are guaranteed through the insertion of wait states. Separate on-chip
precharge counters for each RAS output can be used for
memory interleaving to avoid delayed back to back accesses because of precharge. An additional feature of the
DP8422V, DP84T22 is two access ports to simplify dual accessing. Arbitration among these ports and refresh is done
on chip. To make board level circuit testing easier the
DP84T22 incorporates TRI-STATEÉ output buffers.
Y
Control
Ý of Pins
Ý of Address
(PLCC)
Outputs
Y
Y
Y
Y
Y
Y
Y
Y
Y
On chip high precision delay line to guarantee critical
DRAM access timing parameters
microCMOS process for low power
High capacitance drivers for RAS, CAS, WE and DRAM
address on chip
On chip support for nibble, page and static column
DRAMs
TRI-STATE outputs (DP84T22 only)
Byte enable signals on chip allow byte writing in a word
size up to 32 bits with no external logic
Selection of controller speeds: 25 MHz and 33 MHz
On board Port A/Port B (DP8422V, DP84T22 only)/refresh arbitration logic
Direct interface to all major microprocessors (application notes available)
4 RAS and 4 CAS drivers (the RAS and CAS configuration is programmable)
Largest
DRAM
Possible
Direct Drive
Memory
Capacity
Access
Ports
Available
DP8420V
68
9
256 kbit
4 Mbytes
Single Access Port
DP8421V
68
10
1 Mbit
16 Mbytes
Single Access Port
DP8422V
84
11
4 Mbit
64 Mbytes
Dual Access Ports (A and B)
DP84T22
84
11
4 Mbit
64 Mbytes
Dual Access and TRI-STATE
Block Diagram
DP8420V/21V/22V, DP74T22 DRAM Controller
TL/F/11109 – 1
FIGURE 1
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
Staggered RefreshTM is a trademark of National Semiconductor Corporation.
C1995 National Semiconductor Corporation
TL/F/11109
RRD-B30M105/Printed in U. S. A.
DP8420V/21V/22V-33, DP84T22-25 microCMOS Programmable
256k/1M/4M Dynamic RAM Controller/Drivers
May 1992
Table of Contents
5.3 Extending Refresh
1.0 INTRODUCTION
5.4 Clearing the Refresh Address Counter
2.0 SIGNAL DESCRIPTIONS
5.5 Clearing the Refresh Request Clock
2.1 Address, R/W and Programming Signals
6.0 PORT A WAIT STATE SUPPORT
2.2 DRAM Control Signals
2.3 Refresh Signals
6.1 WAIT Type Output
2.4 Port A Access Signals
6.2 DTACK Type Output
2.5 Port B Access Signals (DP8422V, DP84T22)
6.3 Dynamically Increasing the Number of Wait States
2.6 Common Dual Port Signals (DP8422V, DP84T22)
6.4 Guaranteeing RAS Low Time and RAS Precharge
Time
2.7 Power Signals and Capacitor Input
7.0 RAS AND CAS CONFIGURATION MODES
2.8 Clock Inputs
7.1 Byte Writing
3.0 PROGRAMMING AND RESETTING
7.2 Memory Interleaving
3.1 External Reset
7.3 Address Pipelining
3.2 Programming Methods
7.4 Error Scrubbing
3.2.1 Mode Load Only Programming
7.5 Page/Burst Mode
3.2.2 Chip Selected Access Programming
8.0 TEST MODE
3.3 Internal Programming Modes
9.0 DRAM CRITICAL TIMING PARAMETERS
4.0 PORT A ACCESS MODES
9.1 Programmable Values of tRAH and tASC
4.1 Access Mode 0
9.2 Calculation of tRAH and tASC
4.2 Access Mode 1
10.0 DUAL ACCESSING (DP8422V and DP84T22V)
4.3 Extending CAS with Either Access Mode
4.4 Read-Modify-Write Cycles with Either Access Mode
10.1 Port B Access Mode
4.5 Additional Access Support Features
10.2 Port B Wait State Support
10.3 Common Port A and Port B Dual Port Functions
4.5.1 Address Latches and Column Increment
4.5.2 Address Pipelining
4.5.3 Delay CAS during Write Accesses
10.3.1 GRANTB Output
10.3.2 LOCK Input
10.4 TRI-STATE Outputs (DP84T22 Only)
5.0 REFRESH OPTIONS
5.1 Refresh Control Modes
11.0 ABSOLUTE MAXIMUM RATINGS
5.1.1 Automatic Internal Refresh
5.1.2 Externally Controlled/Burst Refresh
5.1.3 Refresh Request/Acknowledge
12.0 DC ELECTRICAL CHARACTERISTICS
13.0 AC TIMING PARAMETERS
5.2 Refresh Cycle Types
14.0 FUNCTIONAL DIFFERENCES BETWEEN THE
DP8420V/21V/22V, DP84T22 AND THE
DP8420/21/22
5.2.1 Conventional Refresh
5.2.2 Staggered RefreshTM
5.2.3 Error Scrubbing Refresh
15.0 DP8420V/21V/22V, DP84T22 USER HINTS
2
1.0 Introduction
Once the address is latched, a COLumn INCrement (COLINC) feature can be used to increment the column address.
The address latches can also be programmed to be fall
through. COLINC can be used for Sequential Accesses of
Static Column DRAMs. Also, COLINC in conjunction with
ECAS inputs can be used for Sequential Accesses to Page
Mode DRAMs.
RAS and CAS Configuration (Byte Writing):
The DP8420V/21V/22V, DP84T22 are CMOS Dynamic
RAM controllers that incorporate many advanced features
which include address latches, refresh counter, refresh
clock, row, column and refresh address multiplexer, delay
line, refresh/access arbitration logic and high capacitive
drivers. The programmable system interface allows any
manufacturer’s microprocessor or bus to directly interface
via the DP8420V/21V/22V, DP84T22 to DRAM arrays up to
64 Mbytes in size.
After power up, the user must first reset and program the
DP8420V/21V/22V, DP84T22 before accessing the DRAM.
The chip is programmed through the address bus.
Reset:
Due to the differences in power supplies, an External (hardware) Reset must be performed before programming the
chip.
Programming:
After resetting the chip, the user can program the controller
by either one of two methods: Mode Load Only Programming or Chip Select Access Programming.
Initialization Period:
Once the DP8420V/21V/22V, DP84T22 has been programmed for the first time, a 60 ms initialization period is
entered. During this time the DRC performs refreshes to the
DRAM array so further warm up cycles are unnecessary.
The initialization period is entered only after the first programming after a reset.
Accessing Modes:
After resetting and programming the chip, the
DP8420V/21V/22V, DP84T22 is ready to access the
DRAM. There are two modes of accessing with these controllers. Mode 0, which indicates RAS synchronously and
Mode 1, which indicates RAS asynchronously.
Refresh Modes:
The DP8420V/21V/22V, DP84T22 have expanded refresh
capabilities compared to previous DRAM controllers. There
are three modes of refreshing available: Internal Automatic
Refreshing, Externally Controlled/Burst Refreshing and Refresh Request/Acknowledge Refreshing. Any of these
modes can be used together or separately to achieve the
desired results.
Refresh Types:
These controllers have three types of refreshing available:
Conventional, Staggered and Error Scrubbing. Any refresh
control mode can be used with any type of refresh.
Wait Support:
The RAS and CAS drivers can be configured to drive a one,
two or four bank memory array up to 32 bits in width. The
ECAS signals can then be used to select one of four CAS
drivers for Byte Writing with no extra logic.
Memory Interleaving:
When configuring the DP8420V/21V/22V, DP84T22 for
more than one bank, Memory Interleaving can be used. By
tying the low order address bits to the bank select lines B0
and B1, sequential back to back accesses will not be delayed since these controllers have separate precharge
counters per bank.
Address Pipelining:
The DP8420V/21V/22V, DP84T22 are capable of performing Address Pipelining. In address pipelining, the DRC will
guarantee the column address hold time and switch the internal multiplexor to place the row address on the address
bus. At this time, another memory access to another bank
can be initiated.
Dual Accessing:
The DP8422V, DP84T22 have all the features previously
mentioned and unlike the DP8420V/21V, the DP8422V,
DP84T22 have a second port to allow a second CPU to
access the same memory array. The DP8422V, DP84T22
have four signals to support Dual Accessing, these signals
are AREQB, ATACKB, LOCK and GRANTB. All arbitration
for the two ports and refresh is done on chip by the controller through the insertion of wait states. Since the DP8422V,
DP84T22 have only one input address bus, the address
lines must be multiplexed externally. The signal GRANTB
can be used for this purpose.
TRI-STATE Outputs:
The DP84T22 implements TRI-STATE outputs. When the
input OE is asserted the output buffers are enabled, when
OE is negated, logic 1, the output buffers at TRI-STATE
(high Z).
Terminology:
The following explains the terminology used in this data
sheet. The terms negated and asserted are used. Asserted
refers to a ‘‘true’’ signal. Thus, ‘‘ECAS0 asserted’’ means
the ECAS0 input is at a logic 0. The term ‘‘COLINC asserted’’ means the COLINC input is at a logic 1. The term negated refers to a ‘‘false’’ signal. Thus, ‘‘ECAS0 negated’’
means the ECAS0 input is at a logic 1. The term ‘‘COLINC
negated’’ means the input COLINC is at a logic 0. The table
shown below clarifies this terminology.
The DP8420V/21V/22V, DP84T22 have wait support available as DTACK or WAIT. Both are programmable. DTACK,
Data Transfer ACKnowledge, is useful for processors
whose wait signal is active high. WAIT is useful for those
processors whose wait signal is active low. The user can
choose either at programming. These signals are used by
the on chip arbiter to insert wait states to guarantee the
arbitration between accesses, refreshes and precharge.
Both signals are independent of the access mode chosen
and both signals can be dynamically delayed further through
the WAITIN signal to the DP8420V/21V/22V, DP84T22.
Sequential Accesses (Static Column/Page Mode):
The DP8420V/21V/22V, DP84T22 have address latches,
used to latch the bank, row and column address inputs.
3
Signal
Action
Logic Level
Active High
Asserted
High
Active High
Negated
Low
Active Low
Asserted
Low
Active Low
Negated
High
Connection Diagrams
TL/F/11109–2
TL/F/11109 – 3
Top View
Top View
FIGURE 2
FIGURE 3
Order Number DP8420V-33
See NS Package Number V68A
Order Number DP8421V-33
See NS Package Number V68A
TL/F/11109 – 4
Top View
FIGURE 4
Order Number DP8422V-33 or DP84T22-25
See NS Package Number V84A
4
2.0 Signal Descriptions
Pin
Name
Device (If Not
Applicable to All)
Input/
Output
Description
2.1 ADDRESS, R/W AND PROGRAMMING SIGNALS
R0 – 10
R0 – 9
DP8422V/T22
DP8420V/21V
I
I
ROW ADDRESS: These inputs are used to specify the row address during an access
to the DRAM. They are also used to program the chip when ML is asserted (except
R10).
C0 – 10
C0 – 9
DP8422V/T22
DP8420V/21V
I
I
COLUMN ADDRESS: These inputs are used to specify the column address during an
access to the DRAM. They are also used to program the chip when ML is asserted
(except C10).
B0, B1
I
BANK SELECT: Depending on programming, these inputs are used to select a group
of RAS and CAS outputs to assert during an access. They are also used to program
the chip when ML is asserted.
ECAS0 – 3
I
ENABLE CAS: These inputs are used to enable a single or group of CAS outputs
when asserted. In combination with the B0, B1 and the programming bits, these
inputs select which CAS output or CAS outputs will assert during an access. The
ECAS signals can also be used to toggle a group of CAS outputs for page/nibble
mode accesses. They also can be used for byte write operations. If ECAS0 is
negated during programming, continuing to assert the ECAS0 while negating AREQ
or AREQB during an access, will cause the CAS outputs to be extended while the
RAS outputs are negated (the ECASn inputs have no effect during scrubbing
refreshes).
WIN
I
WRITE ENABLE IN: This input is used to signify a write operation to the DRAM. If
ECAS0 is asserted during programming, the WE output will follow this input. This
input asserted will also cause CAS to delay to the next positive clock edge if address
bit C9 is asserted during programming.
COLINC
(EXTNDRF)
I
I
COLUMN INCREMENT: When the address latches are used, and RFIP is negated,
this input functions as COLINC. Asserting this signal causes the column address to
be incremented by one. When RFIP is asserted, this signal is used to extend the
refresh cycle by any number of periods of CLK until it is negated.
ML
I
MODE LOAD: This input signal, when low, enables the internal programming register
that stores the programming information.
O
O
O
DRAM ADDRESS: These outputs are the multiplexed output of the R0 – 9, 10 and
C0–9, 10 and form the DRAM address bus. These outputs contain the refresh
address whenever RFIP is asserted. They contain high capacitive drivers with 20X
series damping resistors.
RAS0 – 3
O
ROW ADDRESS STROBES: These outputs are asserted to latch the row address
contained on the outputs Q0 – 8, 9, 10 into the DRAM. When RFIP is asserted, the
RAS outputs are used to latch the refresh row address contained on the Q0 – 8, 9, 10
outputs in the DRAM. These outputs contain high capacitive drivers with 20X series
damping resistors.
CAS0 – 3
O
COLUMN ADDRESS STROBES: These outputs are asserted to latch the column
address contained on the outputs Q0 – 8, 9, 10 into the DRAM. These outputs have
high capacitive drivers with 20X series damping resistors.
WE
(RFRQ)
O
O
WRITE ENABLE or REFRESH REQUEST: This output asserted specifies a write
operation to the DRAM. When negated, this output specifies a read operation to the
DRAM. When the controller is programmed in address pipelining mode or when
ECAS0 is negated during programming, this output will function as RFRQ. When
asserted, this pin specifies that 13 ms or 15 ms have passed. If DISRFSH is negated,
the DP8420V/21V/22V, DP84T22 will perform an internal refresh as soon as
possible. If DISRFRSH is asserted, RFRQ can be used to externally request a refresh
through the input RFSH. This output has a high capacitive driver and a 20X series
damping resistor.
I
OUTPUT ENABLE: This input asserted, enables the output buffers for the row,
column RASs, CASs and WE. If this input is disabled, logic 1, the output buffers are at
TRI-STATE facilitating the board level circuit testing.
2.2 DRAM CONTROL SIGNALS
Q0 – 10
Q0 – 9
Q0 – 8
OE
DP8422V/T22
DP8421V
DP8421V
DP84T22
(Only)
5
2.0 Signal Descriptions (Continued)
Pin
Name
Device (If Not
Applicable to All)
Input/
Output
Description
2.3 REFRESH SIGNALS
RFIP
O
REFRESH IN PROGRESS: This output is asserted prior to a refresh cycle and is
negated when all the RAS outputs are negated for that refresh.
RFSH
I
REFRESH: This input asserted with DISRFRSH already asserted will request a
refresh. If this input is continually asserted, the DP8420V/21V/22V, DP84T22 will
perform refresh cycles in a burst refresh fashion until the input is negated. If RFSH is
asserted with DISRFSH negated, the internal refresh address counter is cleared
(useful for burst refreshes).
DISRFSH
I
DISABLE REFRESH: This input is used to disable internal refreshes and must be
asserted when using RFSH for externally requested refreshes.
ADS
(ALE)
I
I
ADDRESS STROBE or ADDRESS LATCH ENABLE: Depending on programming,
this input can function as ADS or ALE. In mode 0, the input functions as ALE and
when asserted along with CS causes an internal latch to be set. Once this latch is set
an access will start from the positive clock edge of CLK as soon as possible. In Mode
1, the input functions as ADS and when asserted along with CS, causes the access
RAS to assert if no other event is taking place. If an event is taking place, RAS will be
asserted from the positive edge of CLK as soon as possible. In both cases, the low
going edge of this signal latches the bank, row and column address if programmed to
do so.
CS
I
CHIP SELECT: This input signal must be asserted to enable a Port A access.
AREQ
I
ACCESS REQUEST: This input signal in Mode 0 must be asserted some time after
the first positive clock edge after ALE has been asserted. When this signal is
negated, RAS is negated for the access. In Mode 1, this signal must be asserted
before ADS can be negated. When this signal is negated, RAS is negated for the
access.
WAIT
(DTACK)
O
O
WAIT or DTACK: This output can be programmed to insert wait states into a CPU
access cycle. With R7 negated during programming, the output will function as a
WAIT type output. In this case, the output will be active low to signal a wait condition.
With R7 asserted during programming, the output will function as DTACK. In this
case, the output will be negated to signify a wait condition and will be asserted to
signify the access has taken place. Each of these signals can be delayed by a
number of positive clock edges or negative clock levels of CLK to increase the
microprocessor’s access cycle through the insertion of wait states.
WAITIN
I
WAIT INCREASE: This input can be used to dynamically increase the number of
positive clock edges of CLK until DTACK will be asserted or WAIT will be negated
during a DRAM access.
2.4 PORT A ACCESS SIGNALS
6
2.0 Signal Descriptions (Continued)
Pin
Name
Device (If Not
Applicable to All)
Input/
Output
Description
2.5 PORT B ACCESS SIGNALS
AREQB
DP8422V/T22
only
I
PORT B ACCESS REQUEST: This input asserted will latch the row, column and bank
address if programmed, and requests an access to take place for Port B. If the
access can take place, RAS will assert immediately. If the access has to be delayed,
RAS will assert as soon as possible from a positive edge of CLK.
ATACKB
DP8422V/T22
only
O
ADVANCED TRANSFER ACKNOWLEDGE PORT B: This output is asserted when
the access RAS is asserted for a Port B access. This signal can be used to generate
the appropriate DTACK or WAIT type signal for Port B’s CPU or bus.
2.6 COMMON DUAL PORT SIGNALS
GRANTB
DP8422V/T22
only
O
GRANT B: This output indicates which port is currently granted access to the DRAM
array. When GRANTB is asserted, Port B has access to the array. When GRANTB is
negated, Port A has access to the DRAM array. This signal is used to multiplex the
signals R0 – 8, 9, 10; C0 – 8, 9, 10; B0 – 1; WIN; LOCK and ECAS0 – 3 to the DP8422V
when using dual accessing.
LOCK
DP8422V/T22
only
I
LOCK: This input can be used by the currently granted port to ‘‘lock out’’ the other
port from the DRAM array by inserting wait states into the locked out port’s access
cycle until LOCK is negated.
2.7 POWER SIGNALS AND CAPACITOR INPUT
VCC
I
POWER: Supply Voltage.
GND
I
GROUND: Supply Voltage Reference.
CAP
I
CAPACITOR: This input is used by the internal PLL for stabilization. The value of the
ceramic capacitor should be 0.1 mF and should be connected between this input and
ground.
2.8 CLOCK INPUTS
There are two clock inputs to the DP8420V/21V/22V, DP84T22 CLK and DELCLK. These two clocks may both be tied to the
same clock input, or they may be two separate clocks, running at different frequencies, asynchronous to each other.
CLK
I
SYSTEM CLOCK: This input may be in the range of 0 Hz up to 33 MHz (up to 25 MHz
in the DP84T22V). This input is generally a constant frequency but it may be
controlled externally to change frequencies or perhaps be stopped for some arbitrary
period of time.
This input provides the clock to the internal state machine that arbitrates between
accesses and refreshes. This clock’s positive edges and negative levels are used to
extend the WAIT (DTACK) signals. This clock is also used as the reference for the
RAS precharge time and RAS low time during refresh.
All Port A and Port B accesses are assumed to be synchronous to the system clock
CLK.
DELCLK
I
DELAY LINE CLOCK: The clock input DELCLK, may be in the range of 6 MHz to
20 MHz and should be a multiple of 2 (i.e., 6, 8, 10, 12, 14, 16, 18, 20 MHz) to have
the DP8420V/21V/22V, DP84T22 switching characteristics hold. If DELCLK is not
one of the above frequencies the accuracy of the internal delay line will suffer. This is
because the phase locked loop that generates the delay line assumes an input clock
frequency of a multiple of 2 MHz.
For example, if the DELCLK input is at 7 MHz and we choose a divide by 3 (program
bits C0– 2) this will produce 2.333 MHz which is 16.667% off of 2 MHz. Therefore, the
DP8420V/21V/22V, DP84T22 delay line would produce delays that are shorter
(faster delays) than what is intended. If divide by 4 was chosen the delay line would
be longer (slower delays) than intended (1.75 MHz instead of 2 MHz). (See Section 9
for more information.)
This clock is also divided to create the internal refresh clock.
7
3.0 Programming and Resetting
Due to the variety in power supplies power-up times, an
EXTERNAL RESET must be performed before the DRAM
controller can be programmed and used.
3.1 EXTERNAL RESET
At power up, if the internal power up reset worked, all internal latches and flip-flops are cleared and the part is ready to
be programmed. The power up state can also be achieved
by performing an External Reset, which is required to insure
proper operation. External Reset is achieved by asserting
ML and DISRFSH for at least 16 positive clock edges. In
order to perform simply a Reset, the ML signal must be
negated before DISRFSH is negated as shown in Figure 5a .
This procedure will only reset the controller which now is
ready for programming.
While performing an External Reset, if the user negates
DISRFSH at least one clock period before negating ML, as
shown in Figure 5b , ML negated will program the DP8420V/
21V/22V, DP84T22 with the values in R0 – 9, C0 – 9, B0 – 1
and ECAS0. The 60 ms initialization period will be entered
since it is the first programming after reset. This is a good
way of resetting and programming the part at the same time.
Make sure the right programming bits are on the address
bus before ML is negated.
The DRC may be programmed any time on the fly, but the
user must make sure that No Access or Refresh is in progress. Reset is asynchronous.
After going through the reset procedure, the DP8420V/
21V/22V, DP84T22 can be programmed by either of two
methods; Mode Load Only Programming or Chip Select Access Programming. After programming the DRC for the first
time after reset, the chip enters a 60 ms initialization period,
during this period the controller performs refreshes every
13 ms or 15 ms, this makes further DRAM warm up cycles
unnecessary. After this stage the chip can be reprogrammed as many times as the user wishes and the 60 ms
period will not be entered into unless the chip is reset and
programmed again.
During the 60 ms initialization period, RFIP is asserted low
and RAS toggles every 13 ms or 15 ms depending on the
programming bit for refresh (C3). CAS will be inactive (logic
1) and the ‘‘Q’’ outputs will count from 0 to 2047 refreshing
the entire DRAM array. The actual initialization time period
is given by the following formula. T e 4096* (Clock Divisor
Select)* (Refresh Clock Fine Tune)/(DELCLK Frq.)
TL/F/11109 – 5
FIGURE 5a. Chip Reset but Not Programmed
TL/F/11109 – 6
FIGURE 5b. Chip Reset and Programmed
8
3.0 Programming and Resetting (Continued)
3.2 PROGRAMMING METHODS
3.2.2 Chip Selected Access Programming
3.2.1 Mode Load Only Programming
The chip can also be programmed by performing a chip
selected access. To program the chip using this method,
ML is asserted, then CS is asserted and a valid programming selection is placed on the address bus. When AREQ is
asserted, the programming bits affecting the wait logic become effective immediately, then DTACK is asserted allowing the access to terminate. After the access, ML is negated
and the rest of the programming bits take effect.
To use this method the user asserts ML enabling the internal programming register. After ML is asserted, a valid programming selection is placed on the address bus, B0, B1
and ECAS0 inputs, then ML is negated. When ML is negated the programming bits are latched into the internal programming register and the DP8420V/21V/22V, DP84T22 is
programmed, see Figure 6 . When programming the chip,
the controller must not be refreshing, RFIP must be high (1)
to have a successful programming.
TL/F/11109 – 7
FIGURE 6. ML Only Programming
TL/F/11109 – 8
FIGURE 7. CS Access Programming
9
3.0 Programming and Resetting (Continued)
3.3 PROGRAMMING BIT DEFINITIONS
Symbol
Description
ECAS0
Extend CAS/Refresh Request Select
0
The CASn outputs will be negated with the RASn outputs when AREQ (or AREQB, DP8422V, DP84T22 only) is
negated. The WE output pin will function as write enable.
1
The CASn outputs will be negated, during an acccess (Port A (or Port B, DP8422V, DP84T22 only)) when their
corresponding ECASn inputs are negated. This feature allows the CAS outputs to be extended beyond the RAS
outputs negating. Scrubbing refreshes are NOT affected. During scrubbing refreshes the CAS outputs will negate
along with the RAS outputs regardless of the state of the ECAS inputs.
The WE output will function as ReFresh ReQuest (RFRQ) when this mode is programmed.
B1
Access Mode Select
0
ACCESS MODE 0: ALE pulsing high sets an internal latch. On the next positive edge of CLK, the access (RAS)
will start. AREQ will terminate the access.
1
ACCESS MODE 1: ADS asserted starts the access (RAS) immediately. AREQ will terminate the access.
B0
Address Latch Mode
0
1
ADS or ALE asserted for Port A or AREQB asserted for Port B with the appropriate GRANT latch the input row,
column and bank address.
The row, column and bank latches are fall through.
C9
Delay CAS during WRITE Accesses
0
1
CAS is treated the same for both READ and WRITE accesses.
During WRITE accesses, CAS will be asserted by the event that occurs last: CAS asserted by the internal delay
line or CAS asserted on the positive edge of CLK after RAS is asserted.
C8
Row Address Hold Time
0
1
Row Address Hold Time e 25 ns minimum
Row Address Hold Time e 15 ns minimum
C7
Column Address Setup Time
0
1
Column Address Setup Time e 10 ns miniumum
Column Address Setup Time e 0 ns minimum
C6, C5, C4
RAS and CAS Configuration Modes/Error Scrubbing during Refresh
0, 0, 0
RAS0–3 and CAS0–3 are all selected during an access. ECASn must be asserted for CASn to be asserted.
B0 and B1 are not used during an access. Error scrubbing during refresh.
RAS and CAS pairs are selected during an access by B1. ECASn must be asserted for CASn to be asserted.
B1 e 0 during an access selects RAS0–1 and CAS0 –1.
B1 e 1 during an access selects RAS2–3 and CAS2 –3.
B0 is not used during an Access.
Error scrubbing during refresh.
RAS and CAS singles are selected during an access by B0 – 1. ECASn must be asserted for CASn to be asserted.
B1 e 0, B0 e 0 during an access selects RAS0 and CAS0.
B1 e 0, B0 e 1 during an access selects RAS1 and CAS1.
B1 e 1, B0 e 0 during an access selects RAS2 and CAS2.
B1 e 1, B0 e 1 during an access selects RAS3 and CAS3.
Error scrubbing during refresh.
RAS0–3 and CAS0–3 are all selected during an access. ECASn must be asserted for CASn to be asserted.
B1, B0 are not used during an access.
No error scrubbing. (RAS only refreshing)
RAS pairs are selected by B1. CAS0–3 are all selected. ECASn must be asserted for CASn to be asserted.
B1 e 0 during an access selects RAS0–1 and CAS0 –3.
B1 e 1 during an access selects RAS2–3 and CAS0 –3.
B0 is not used during an access.
No error scrubbing.
0, 0, 1
0, 1, 0
0, 1, 1
1, 0, 0
10
3.0 Programming and Resetting (Continued)
3.3 PROGRAMMING BIT DEFINITIONS (Continued)
Symbol
Description
C6, C5, C4
RAS and CAS Configuration Modes (Continued)
1, 0, 1
RAS and CAS pairs are selected by B1. ECASn must be asserted for CASn to be asserted.
B1 e 0 during an access selects RAS0 – 1 and CAS0 –1.
B1 e 1 during an access selects RAS2 – 3 and CAS2 –3.
B0 is not used during an access.
No error scrubbing.
RAS singles are selected by B0–1. CAS0 – 3 are all selected. ECASn must be asserted for CASn to be
asserted.
B1 e 0, B0 e 0 during an access selects RAS0 and CAS0 –3.
B1 e 0, B0 e 1 during an access selects RAS1 and CAS0 –3.
B1 e 1, B0 e 0 during an access selects RAS2 and CAS0 –3.
B1 e 1, B0 e 1 during an access selects RAS3 and CAS0 –3.
No error scrubbing.
1, 1, 0
1, 1, 1
RAS and CAS singles are selected by B0, 1. ECASn must be asserted for CASn to be asserted.
B1 e 0, B0 e 0 during an access selects RAS0 and CAS0.
B1 e 0, B0 e 1 during an access selects RAS1 and CAS1.
B1 e 1, B0 e 0 during an access selects RAS2 and CAS2.
B1 e 1, B0 e 1 during an access selects RAS3 and CAS3.
No error scrubbing.
C3
Refresh Clock Fine Tune Divisor
0
Divide delay line/refresh clock further by 30 (If DELCLK/Refresh Clock Clock Divisor e 2 MHz e 15 ms
refresh period).
Divide delay line/refresh clock further by 26 (If DELCLK/Refresh Clock Clock Divisor e 2 MHz e 13 ms
refresh period).
1
C2, C1, C0
Delay Line/Refresh Clock Divisor Select
0, 0, 0
0, 0, 1
0, 1, 0
0, 1, 1
1, 0, 0
1, 0, 1
1, 1, 0
1, 1, 1
Divide DELCLK by 10 to get as close to 2 MHz as possible.
Divide DELCLK by 9 to get as close to 2 MHz as possible.
Divide DELCLK by 8 to get as close to 2 MHz as possible.
Divide DELCLK by 7 to get as close to 2 MHz as possible.
Divide DELCLK by 6 to get as close to 2 MHz as possible.
Divide DELCLK by 5 to get as close to 2 MHz as possible.
Divide DELCLK by 4 to get as close to 2 MHz as possible.
Divide DELCLK by 3 to get as close to 2 MHz as possible.
R9
Refresh Mode Select
0
1
RAS0–3 will all assert and negate at the same time during a refresh.
Staggered Refresh. RAS outputs during refresh are separated by one positive clock edge. Depending on the
configuration mode chosen, either one or two RASs will be asserted.
R8
Address Pipelining Select
0
Address pipelining is selected. The DRAM controller will switch the DRAM column address back to the row
address after guaranteeing the column address hold time.
Non-address pipelining is selected. The DRAM controller will hold the column address on the DRAM address
bus until the access RASs are negated.
1
R7
WAIT or DTACK Select
0
1
WAIT type output is selected.
DTACK (Data Transfer ACKnowledge) type output is selected.
R6
Add Wait States to the Current Access if WAITIN is Low
0
1
WAIT or DTACK will be delayed by one additional positive edge of CLK.
WAIT or DTACK will be delayed by two additional positive edges of CLK.
11
3.0 Programming and Resetting (Continued)
3.3 PROGRAMMING BIT DEFINITIONS (Continued)
Symbol
Description
R5, R4
WAIT/DTACK during Burst (See Section 5.1.2 or 5.2.2)
0, 0
NO WAIT STATES; If R7 e 0 during programming, WAIT will remain negated during burst portion of access.
If R7 e 1 programming, DTACK will remain asserted during burst portion of access.
0, 1
1T; If R7 e 0 during programming, WAIT will assert when the ECAS inputs are negated with AREQ asserted.
WAIT will negate from the positive edge of CLK after the ECASs have been asserted.
If R7 e 1 during programming, DTACK will negate when the ECAS inputs are negated with AREQ asserted.
DTACK will assert from the positive edge of CLK after the ECASs have been asserted.
(/2T; If R7 e 0 during programming, WAIT will assert when the ECAS inputs are negated with AREQ asserted.
WAIT will negate on the negative level of CLK after the ECASs have been asserted.
If R7 e 1 during programming, DTACK will negate when the ECAS inputs are negated with AREQ asserted.
DTACK will assert from the negative level of CLK after the ECASs have been asserted.
0T; If R7 e 0 during programming, WAIT will assert when the ECAS inputs are negated. WAIT will negate when
the ECAS inputs are asserted.
If R7 e 1 during programming, DTACK will negate when the ECAS inputs are negated. DTACK will assert when
the ECAS inputs are asserted.
1, 0
1, 1
R3, R2
WAIT/DTACK Delay Times (See Section 5.1.1 or 5.2.1)
0, 0
NO WAIT STATES; If R7 e 0 during programming, WAIT will remain high during non-delayed accesses. WAIT
will negate when RAS is negated during delayed accesses.
NO WAIT STATES; If R7 e 1 during programming, DTACK will be asserted when RAS is asserted.
0, 1
(/2T; If R7 e 0 during programming, WAIT will negate on the negative level of CLK, after the access RAS.
1T; If R7 e 1 during programming, DTACK will be asserted on the positive edge of CLK after the access RAS.
NO WAIT STATES, (/2T; If R7 e 0 during programming, WAIT will remain high during non-delayed accesses.
WAIT will negate on the negative level of CLK, after the access RAS, during delayed accesses.
(/2T; If R7 e 1 during programming, DTACK will be asserted on the negative level of CLK after the access RAS.
1T; If R7 e 0 during programming, WAIT will negate on the positive edge of CLK after the access RAS.
1(/2T; If R7 e 1 during programming, DTACK will be asserted on the negative level of CLK after the positive edge
of CLK after the access RAS.
1, 0
1, 1
R1, R0
RAS Low and RAS Precharge Time
0, 0
RAS asserted during refresh e 2 positive edges of CLK.
RAS precharge time e 1 positive edge of CLK.
RAS will start from the first positive edge of CLK after GRANTB transitions (DP8422V, DP84T22).
0, 1
RAS asserted during refresh e 3 positive edges of CLK.
RAS precharge time e 2 positive edges of CLK.
RAS will start from the second positive edge of CLK after GRANTB transitions (DP8422V, DP84T22).
1, 0
RAS asserted during refresh e 2 positive edges of CLK.
RAS precharge time e 2 positive edges of CLK.
RAS will start from the first positive edge of CLK after GRANTB transitions (DP8422V, DP84T22).
1, 1
RAS asserted during refresh e 4 positive edges of CLK.
RAS precharge time e 3 positive edges of CLK.
RAS will start from the second positive edge of CLK after GRANTB transitions (DP8422V, DP84T22).
12
4.0 Port A Access Modes
first rising edge of clock. If a refresh or a Port B access is in
progress or precharge time is required, the controller will
wait until these events have taken place and assert RAS
(RASs) on the next positive edge of clock.
Sometime after the first positive edge of clock after ALE and
CS have been asserted, the input AREQ must be asserted.
In single port applications, once AREQ is asserted, CS can
be negated. On the other hand, ALE can stay asserted several periods of clock; however, ALE must be negated before
or during the period of CLK in which AREQ is negated.
The controller samples AREQ on the every rising edge of
clock after DTACK is asserted. The access will end when
AREQ is sampled negated.
The DP8420V/21V/22V, DP84T22 have two general purpose access modes. Mode 0 RAS synchronous and Mode 1
RAS asynchronous. One of these modes is selected at programming through the B1 input. A Port A access to DRAM is
initiated by two input signals: ADS (ALE) and CS. The access is always terminated by one signal: AREQ. These input
signals should be synchronous to the input clock.
4.1 ACCESS MODE 0
Mode 0, synchronous access, is selected by negating the
input B1 during programming (B1 e 0). To initiate a Mode 0
access, ALE is pulse high and CS is asserted. If precharge
time was met, a refresh of DRAM or a Port B access was
not in progress, the RAS (RASs) would be asserted on the
TL/F/11109 – 9
FIGURE 8a. Access Mode 0
13
4.0 Port A Access Modes (Continued)
en place and assert RAS (RASs) from the next rising edge
of clock.
When ADS is asserted or sometime after, AREQ must be
asserted. At this time, ADS can be negated and AREQ will
continue the access. Also, ADS can continue to be asserted
after AREQ has been asserted and negated; however, a
new access will not start until ADS is negated and asserted
again. When address pipelining is not implemented, ADS
and AREQ can be tied together.
The access will end when AREQ is negated.
4.2 ACCESS MODE 1
Mode 1, asynchronous access, is selected by asserting the
input B1 during programming (B1 e 1). This mode allows accesses to start immediately from the access request input,
ADS. To initiate a Mode 1 access, CS is asserted followed
by ADS asserted. If precharge time was met, a refresh of
the DRAM or a Port B access was not in progress, the RAS
(RASs) would be asserted from ADS being asserted. If a
refresh or Port B access is in progress or precharge time is
required, the controller will wait until these events have tak-
TL/F/11109 – 10
FIGURE 8b. Access Mode 1
14
4.0 Port A Access Modes (Continued)
with AREQ. If ECAS0 was negated (1) during programming,
CAS (CASs) will continue to be asserted after RAS has
been negated, given that the appropriate ECAS inputs are
asserted. This allows a DRAM to have data present on the
data out bus while gaining RAS precharge time.
4.3 EXTENDING CAS WITH EITHER ACCESS MODE
In both access modes, once AREQ is negated, RAS and
DTACK if programmed will be negated. If ECAS0 was asserted (0) during programming, CAS (CASs) will be negated
TL/F/11109 – 11
FIGURE 9a. Access Mode 0 Extending CAS
TL/F/11109 – 12
FIGURE 9b. Access Mode 1 Extending CAS
15
4.0 Port A Access Modes (Continued)
while CAS is negated. This method is better than changing
WIN from negated to asserted in a late write access because here a problem may arise with DATA IN and DATA
OUT being valid at the same time. This may result in a data
line trying to drive two different levels simultaneously. The
page mode method of a read-modify-write access allows
the user to have transceivers in the system because the
data in (read data) is guaranteed to be high impedance during the time the data out (write data) is valid.
4.4 READ-MODIFY-WRITE CYCLES
WITH EITHER ACCESS MODE
There are 2 methods by which this chip can be used to do
read-modify-write access cycles. The first method involves
doing a late write access where the WIN input is asserted
some delay after CAS is asserted. The second method involves doing a page mode read access followed by a page
mode write access with RAS held low (see Figure 9c ).
CASn must be toggled using the ECASn inputs and WIN has
to be changed from negated to asserted (read to write)
TL/F/11109 – 13
*There may be idle states inserted here by the CPU.
FIGURE 9c. Read-Modify-Write Access Cycle
16
4.0 Port A Access Modes (Continued)
In Mode 1, the address latches are in fall through mode until
ADS is asserted. ADS asserted latches the address.
4.5 ADDITIONAL ACCESS SUPPORT FEATURES
To support the different modes of accessing, the DP8420V/
21V/22V, DP84T22 offer other access features. These additional features include: Address Latches and Column Increment (for page/burst mode support), Address Pipelining,
and Delay CAS (to allow the user with a multiplexed bus to
ensure valid data is present before CAS is asserted).
Once the address is latched, the column address can be
incremented with the input COLINC. COLINC can be used
for sequential accesses of static column DRAMs. COLINC
can also be used with the ECAS inputs to support sequential accesses to page mode DRAMs as shown in Figure 10 .
COLINC should only be asserted when the signal RFIP is
negated during an access since this input functions as extended refresh when RFIP is asserted. COLINC must be
negated (0) when the address is being latched (ADS falling
edge in Mode 1). If COLINC is asserted with all of the bits of
the column address asserted (ones), the column address
will return to zero.
4.5.1 Address Latches and Column Increment
The Address Latches can be programmed, through programming bit B0. They can be programmed to either latch
the address or remain in a fall-through mode. If the address
latches are used to latch the address, the controller will
function as follows:
In Mode 0, the rising edge of ALE places the latches in fallthrough, once ALE is negated, the address present in the
row, column and bank input is latched.
TL/F/11109 – 14
FIGURE 10. Column Increment
For Port B, if GRANTB is asserted, the address will be
latched with AREQB asserted. If GRANTB is negated, the
address will latch on the first or second positive edge of
CLK after GRANTB is asserted depending on the programming bits R0, R1.
The address latches function differently with the DP8422V,
DP84T22. The DP8422V, DP84T22 will latch the address of
the currently granted port. If Port A is currently granted, the
address will be latched as described in Section 4.5.1. If Port
A is not granted, and requests an access, the address will
be latched on the first or second positive edge of CLK after
GRANTB has been negated depending on the programming
bits R0, R1.
17
4.0 Port A Access Modes (Continued)
During address pipelining in Mode 0, shown in Figure 11c ,
ALE cannot be pulsed high to start another access until
AREQ has been asserted for the previous access for at
least one period of CLK. DTACK, if programmed, will be
negated once AREQ is negated. WAIT, if programmed to
insert wait states, will be asserted once ALE and CS are
asserted.
In Mode 1, shown in Figure 11d , ADS can be negated once
AREQ is asserted. After meeting the minimum negated
pulse width for ADS, ADS can again be asserted to start a
new access. DTACK, if programmed, will be negated once
AREQ is negated. WAIT, if programmed, will be asserted
once ADS is asserted.
In either mode with either type of wait programmed, the
DP8420V/21V/22V, DP84T22 will still delay the access for
precharge if sequential accesses are to the same bank or if
a refresh takes place.
4.5.2 Address Pipelining
Address pipelining is the overlapping of accesses to different banks of DRAM. If the majority of successive accesses
are to a different bank, the accesses can be overlapped.
Because of this overlapping, the cycle time of the DRAM
accesses are greatly reduced. The DP8420V/21V/22V,
DP84T22 can be programmed to allow a new row address
to be placed on the DRAM address bus after the column
address hold time has been met. At this time, a new access
can be initiated with ADS or ALE, depending on the access
mode, while AREQ is used to sustain the current access.
The DP8422V and DP84T22 support address pipelining for
Port A only. This mode cannot be used with page, static
column or nibble modes of operations because the DRAM
column address is switched back to the row address after
CAS is asserted. This mode is programmed through address bit R8 (see Figures 11a and 11b ). In this mode, the
output WE always functions as RFRQ.
TL/F/11109 – 15
FIGURE 11a. Non-Address Pipelined Mode
TL/F/11109 – 16
FIGURE 11b. Address Pipelined Mode
18
FIGURE 11d. Mode 1 Address Pipelining (DTACK 1(/2T Programmed, DTACK is Sampled at the ‘‘T3’’ Falling Clock Edge)
FIGURE 11c. Mode 0 Address Pipelining (WAIT of 0, (/2T Has Been Programmed.
WAIT is Sampled at the ‘‘T3’’ Falling Clock Edge)
TL/F/11109 – 18
TL/F/11109 – 17
4.0 Port A Access Modes (Continued)
19
4.0 Port A Access Modes (Continued)
4.5.3 Delay CAS during Write Accesses
12a and 12b. If the possibility exists that data still may not
be present after the first positive edge of CLK, CAS can be
delayed further with the ECAS inputs. If address bit C9 is
negated during programming, read and write accesses will
be treated the same (with regard to CAS).
Address bit C9 asserted during programming will cause CAS
to be delayed until the first positive edge of CLK after RAS
is asserted when the input WIN is asserted. Delaying CAS
during write accesses ensures that the data to be written to
DRAM will be setup to CAS asserting as shown in Figures
TL/F/11109 – 19
FIGURE 12a. Mode 0 Delay CAS
TL/F/11109 – 20
FIGURE 12b. Mode 1 Delay CAS
20
5.0 Refresh Options
In every combination of refresh control mode and refresh
type, the DP8420V/21V/22V, DP84T22 is programmed to
keep RAS asserted a number of CLK periods. The time values of RAS low during refresh are programmed through programming bits R0 and R1.
The DP8420V/21V/22V, DP84T22 support three refresh
control mode options:
1. Automatic Internally Controlled Refresh.
2. Externally Controlled/Burst Refresh.
3. Refresh Request/Acknowledge.
With each of the control modes above, three types of refresh can be performed.
1. All RAS Refresh.
5.1 REFRESH CONTROL MODES
5.1.1. Automatic Internal Refresh
The DP8420V/21V/22V, DP84T22 have an internal refresh
clock. The period of the refresh clock is generated from the
programming bits C0 – 3. Every period of the refresh clock,
an internal refresh request is generated. As long as a DRAM
access is not currently in progress and precharge time has
been met, the internal refresh request will generate an automatic internal refresh. If a DRAM access is in progress, the
DP8420V/21V/22V, DP84T22 on-chip arbitration logic will
wait until the access is finished before performing the refresh. The refresh/access arbitration logic can insert a refresh cycle between two address pipelined accesses. However, the refresh arbitration logic can not interrupt an access cycle to perform a refresh. To enable automatic internally controlled refreshes, the input DISRFSH must be negated.
2. Staggered Refresh.
3. Error Scrubbing During All RAS Refresh.
There are three inputs, EXTNDRF, RFSH and DISRFSH,
and two outputs, RFIP and RFRQ, associated with refresh.
There are also ten programming bits: R0–1, R9, C0 – 6 and
ECAS0 used to program the various types of refreshing.
Asserting the input EXTNDRF, extends the refresh cycle for
a single or multiple integral periods of CLK.
The output RFIP is asserted one period of CLK before the
first refresh RAS is asserted. If an access is currently in
progress, RFIP will be asserted up to one period of CLK
before the first refresh RAS, after AREQ or AREQB is negated for the access (see Figure 13 ).
The DP8420V/21V/22V, DP84T22 will increment the refresh address counter automatically, independent of the refresh mode used. The refresh address counter will be incremented once all the refresh RASs have been negated.
TL/F/11109 – 21
Explanation of Terms
RFRQ e ReFresh ReQuest internal to the DP8420V/21V/22V, DP84T22. RFRQ has the ability to hold off a pending access.
RFSH e Externally requested ReFreSH
RFIP e
ReFresh in Progress
ACIP e
Port A or Port B (DP8422V and DP84T22 only) ACcess in Progress. This means that either RAS is low for an access or is in the
process of transitioning low for an access.
FIGURE 13. DP8420V/21V/22V, DP84T22 Access/Refresh Arbitration State Program
21
5.0 Refresh Options (Continued)
take place on the next positive edge of CLK as shown in
Figure 14a . If an access to DRAM is in progress or precharge time for the last access has not been met, the refresh will be delayed. Since pulsing RFSH low sets a latch,
the user does not have to keep RFSH low until the refresh
starts. When the last refresh RAS negates, the internal refresh request latch is cleared.
5.1.2 Externally Controlled/Burst Refresh
To use externally controlled/burst refresh, the user must
disable the automatic internally controlled refreshes by asserting the input DISRFSH. The user is responsible for generating the refresh request by asserting the input RFSH.
Pulsing RFSH low, sets an internal latch, that is used to
produce the internal refresh request. The refresh cycle will
TL/F/11109 – 22
FIGURE 14a. Single External Refreshes (2 Periods of RAS Low during Refresh Programmed)
By keeping RFSH asserted past the positive edge of CLK
which ends the refresh cycle as shown in Figure 14b , the
user will perform another refresh cycle. Using this technique, the user can perform a burst refresh consisting of any
number of refresh cycles. Each refresh cycle during a burst
refresh will meet the refresh RAS low time and the RAS
precharge time (programming bits R0–1).
If the user desires to burst refresh the entire DRAM (all row
addresses) he could generate an end of count signal (burst
refresh finished) by looking at one of the DP8420V/21V/
22V, DP84T22 high address outputs (Q7, Q8, Q9 or Q10)
and the RFIP output. The Qn outputs function as a decode
of how many row addresses have been refreshed (Q7 e
128 refreshes, Q8 e 256 refreshes, Q9 e 512 refreshes,
Q10 e 1024 refreshes).
TL/F/11109 – 23
FIGURE 14b. External Burst Refresh (2 Periods of RAS Precharge,
2 Periods of Refresh RAS Low during Refresh Programmed)
22
5.0 Refresh Options (Continued)
5.1.3 Refresh Request/Acknowledge
The DP8420V/21V/22V, DP84T22 can be programmed to
output internal refresh requests. When the user programs
ECAS0 negated (1) and/or address pipelining mode is selected, the WE output functions as RFRQ. RFRQ (WE) will
be asserted by one of two events:
First, when the external circuitry pulses low the input RFSH
which will request an external refresh.
Second, when the internal refresh clock has expired, which
signals that another refresh is needed.
An example of the first case, where an external refresh is
requested while RFRQ is negated (1), is shown in Figure
15a . Notice that RFRQ will be asserted from a positive edge
of clock.
On the second case, when the RFRQ is asserted from the
expiration of the internal refresh clock, the user has two
options:
First, if DISRFSH is negated, an automatic internal refresh
will take place. See Figure 15b .
Second, with DISRFSH asserted, RFRQ will stay asserted
until RFSH is pulsed low . This option will cause an externally requested/burst refresh to take place. See Figure 15c .
RFRQ will go high and then assert (toggle) if additional periods of the internal refresh clock have expired and neither an
externally controlled refresh nor an automatically controlled
internal refresh have taken place, see Figure 15d . If a time
critical event, or long accesses like page/static column
mode can not be interrupted, RFRQ pulsing high can be
used to increment a counter. This counter can be used to
perform a burst refresh of the number of refreshes missed
(through the RFSH input).
TL/F/11109 – 24
FIGURE 15a. Externally Controlled Single and Burst Refresh with Refresh Request
(RFRQ) Output (2 Periods of RAS Low during Refresh Programmed)
TL/F/11109 – 25
FIGURE 15b. Automatic Internal Refresh with Refresh Request (3T of RAS Low during Refresh Programmed)
23
24
FIGURE 15d. Refresh Request Timing
FIGURE 15c. External Burst Refresh (2 Periods of RAS Precharge,
2 Periods of Refresh RAS Low during Refresh Programmed)
TL/F/11109 – 27
TL/F/11109 – 26
5.0 Refresh Options (Continued)
5.0 Refresh Options (Continued)
5.2 REFRESH CYCLE TYPES
Three different types of refresh cycles are available for use.
The three different types are mutually exclusive and can be
used with any of the three modes of refresh control. The
three different refresh cycle types are: all RAS refresh, staggered RAS refresh and error scrubbing during all RAS refresh. In all refresh cycle types, the RAS precharge time is
guaranteed: between the previous access RAS ending and
the refresh RAS0 starting; between refresh RAS3 ending
and access RAS beginning; between burst refresh RASs.
5.2.1 Conventional RAS Refresh
A conventional refresh cycle causes RAS0 – 3 to all assert
from the first positive edge of CLK after RFIP is asserted as
shown in Figure 16 . RAS0 – 3 will stay asserted until the
number of positive edges of CLK programmed have passed.
On the last positive edge, RAS0 – 3, and RFIP will be negated. This type of refresh cycle is programmed by negating
address bit R9 during programming.
TL/F/11109 – 28
FIGURE 16. Conventional RAS Refresh
5.2.2 Staggered RAS Refresh
A staggered refresh staggers each RAS or group of RASs
by a positive edge of CLK as shown in Figure 17 . The number of RASs, which will be asserted on each positive edge
of CLK, is determined by the RAS, CAS configuration mode
programming bits C4–C6. If single RAS outputs are selected during programming, then each RAS will assert on successive positive edges of CLK. If two RAS outputs are selected during programming then RAS0 and RAS1 will assert
on the first positive edge of CLK after RFIP is asserted.
RAS2 and RAS3 will assert on the second positive edge of
CLK after RFIP is asserted. If all RAS outputs were selected
during programming, all RAS outputs would assert on the
first positive edge of CLK after RFIP is asserted. Each RAS
or group of RASs will meet the programmed RAS low time
and then negate.
TL/F/11109 – 29
FIGURE 17. Staggered RAS Refresh
25
5.0 Refresh Options (Continued)
5.2.3 Error Scrubbing during Refresh
The DP8420V/21V/22V, DP84T22 support error scrubbing
during all RAS DRAM refreshes. Error scrubbing during refresh is selected through bits C4–C6 with bit R9 negated
during programming. Error scrubbing can not be used with
staggered refresh (see Section 8.0). Error scrubbing during
refresh allows a CAS or group of CASs to assert during the
all RAS refresh as shown in Figure 18 . This allows data to
be read from the DRAM array and passed through an Error
Detection And Correction Chip, EDAC. If the EDAC determines that the data contains a single bit error and corrects
that error, the refresh cycle can be extended with the input
extend refresh, EXTNDRF, and a read-modify-write operation can be performed by asserting WE. It is the responsibility of the designer to ensure that WE is negated. The
DP8422V, DP84T22 have a 24-bit internal refresh address
counter that contains the 11 row, 11 column and 2 bank
addresses. The DP8420V/21V have a 22-bit internal refresh
address counter that contains the 10 row, 10 column and 2
bank addresses. These counters are configured as bank,
column, row with the row address as the least significant
bits. The bank counter bits are then used with the programming selection to determine which CAS or group of CASs
will assert during a refresh.
TL/F/11109 – 30
FIGURE 18. Error Scrubbing during Refresh
26
5.0 Refresh Options (Continued)
5.4 CLEARING THE REFRESH ADDRESS COUNTER
The refresh address counter can be cleared by asserting
RFSH while DISRFSH is negated as shown in Figure 20a .
This can be used prior to a burst refresh of the entire memory array. By asserting RFSH one period of CLK before
DISRFSH is asserted and then keeping both inputs asserted, the DP8420V/21V/22V, DP84T22 will clear the refresh
address counter and then perform refresh cycles separated
by the programmed value of precharge as shown in Figure
20b . An end-of-count signal can be generated from the Q
DRAM address outputs of the DP8420V/21V/22V,
DP84T22 and used to negate RFSH.
5.3 EXTENDING REFRESH
The programmed number of periods of CLK that refresh
RASs are asserted can be extended by one or multiple periods of CLK. Only the all RAS (with or without error scrubbing) type of refresh can be extended. To extend a refresh
cycle, the input extend refresh, EXTNDRF, must be asserted before the positive edge of CLK that would have negated
all the RAS outputs during the refresh cycle and after the
positive edge of CLK which starts all RAS outputs during the
refresh as shown in Figure 19 . This will extend the refresh to
the next positive edge of CLK and EXTNDRF will be sampled again. The refresh cycle will continue until EXTNDRF is
sampled low on a positive edge of CLK.
TL/F/11109 – 31
FIGURE 19. Extending Refresh with the Extend Refresh (EXTNDRF) Input
TL/F/11109 – 32
FIGURE 20a. Clearing the Refresh Address Counter
TL/F/11109 – 33
FIGURE 20b. Clearing the Refresh Counter during Burst
27
5.0 Refresh Options (Continued)
refresh request clock, the user is guaranteed that an internal refresh request will not be generated for approximately
15 ms, one refresh clock period, from the time RFSH is negated. This action will also clear the refresh address counter.
5.5 CLEARING THE REFRESH REQUEST CLOCK
The refresh request clock can be cleared by negating
DISRFSH and asserting RFSH for 500 ns, one period of the
internal 2 MHz clock as shown in Figure 21 . By clearing the
TL/F/11109 – 34
FIGURE 21. Clearing the Refresh Request Clock Counter
6.0 Port A Wait State Support
cycle, thereby increasing the length of the CPU’s access.
Once the event has been completed, the DP8420V/21V/
22V, DP84T22 will allow the access to take place and stop
inserting wait states.
There are six programming bits, R2 – R7; an input, WAITIN;
and an output that functions as WAIT or DTACK.
Wait states allow a CPU’s access cycle to be increased by
one or multiple CPU clock periods. The wait or ready input is
named differently by CPU manufacturers. However, any
CPU’s wait or ready input is compatible with either the WAIT
or DTACK output of the DP8420V/21V/22V, DP84T22. The
user determines whether to program WAIT or DTACK (R7)
and which value to select for WAIT or DTACK (R2, R3) depending upon the CPU used and where the CPU samples its
wait input during an access cycle.
The decision to terminate the CPU access cycle is directly
affected by the speed of the DRAMs used. The system designer must ensure that the data from the DRAMs will be
present for the CPU to sample or that the data has been
written to the DRAM before allowing the CPU access cycle
to terminate.
The insertion of wait states also allows a CPU’s access cycle to be extended until the DRAM access has taken place.
The DP8420V/21V/22V, DP84T22 insert wait states into
CPU access cycles due to; guaranteeing precharge time,
refresh currently in progress, user programmed wait states,
the WAITIN signal being asserted and GRANTB not being
valid (DP8422V, DP84T22 only). If one of these events is
taking place and the CPU starts an access, the DP8420V/
21V/22V, DP84T22 will insert wait states into the access
6.1 WAIT TYPE OUTPUT
With the R7 address bit negated during programming, the
user selects the WAIT output. As long as WAIT is sampled
asserted by the CPU, wait states (extra clock periods) are
inserted into the current access cycle as shown in Figure
22 . Once WAIT is sampled negated, the access cycle is
completed by the CPU. WAIT is asserted at the beginning of
a chip selected access and is programmed to negate a
number of positive edges and/or negative levels of CLK
from the event that starts the access. WAIT can also be
programmed to function in page/burst mode applications.
Once WAIT is negated during an access, and the ECAS
inputs are negated with AREQ asserted, WAIT can be programmed to toggle, following the ECAS inputs. Once AREQ
is negated, ending the access, WAIT will stay negated until
the next chip selected access. For more details about WAIT
Type Output, see Application Note AN-773.
TL/F/11109 – 35
FIGURE 22. WAIT Type Output
28
6.0 Port A Wait State Support (Continued)
6.3 DYNAMICALLY INCREASING THE
NUMBER OF WAIT STATES
6.2 DTACK TYPE OUTPUT
With the R7 address bit asserted during programming, the
user selects the DTACK type output. As long as DTACK is
sampled negated by the CPU, wait states are inserted into
the current access cycle as shown in Figure 23. Once
DTACK is sampled asserted, the access cycle is completed
by the CPU. DTACK, which is normally negated, is programmed to assert a number of positive edges and/or negative levels from the event that starts RAS for the access.
DTACK can also be programmed to function during page/
burst mode accesses. Once DTACK is asserted and the
ECAS inputs are negated with AREQ asserted, DTACK can
be programmed to negate and assert from the ECAS inputs
toggling to perform a page/burst mode operation. Once
AREQ is negated, ending the access, DTACK will be negated and stays negated until the next chip selected access.
For more details about DTACK type output, see Application
Note AN-773.
The user can increase the number of positive edges of CLK
before DTACK is asserted or WAIT is negated. With the
input WAITIN asserted, the user can delay DTACK asserting
or WAIT negating either one or two more positive edges of
CLK. The number of edges is programmed through address
bit R6. If the user is increasing the number of positive edges
in a delay that contains a negative level, the positive edges
will be met before the negative level. For example if the user
programmed DTACK of (/2T, asserting WAITIN, programmed as 2T, would increase the number of positive edges resulting in DTACK of 2(/2T as shown in Figure 24a . Similarly, WAITIN can increase the number of positive edges in
a page/burst access. WAITIN can be permanently asserted
in systems requiring an increased number of wait states.
WAITIN can also be asserted and negated, depending on
the type of access. As an example, a user could invert the
WRITE line from the CPU and connect the output to
WAITIN. This could be used to perform write accesses with
1 wait state and read accesses with 2 wait states as shown
in Figure 24b .
TL/F/11109 – 36
FIGURE 23. DTACK Type Output
TL/F/11109 – 37
FIGURE 24a. WAITIN Example (DTACK is Sampled at the ‘‘T3’’ Falling Clock Edge)
29
6.0 Port A Wait State Support (Continued)
TL/F/11109 – 38
FIGURE 24b. WAITIN Example (WAIT is Sampled at the End of ‘‘T2’’).
6.4 GUARANTEEING RAS LOW TIME
AND RAS PRECHARGE TIME
The DP8420V/21V/22V, DP84T22 will guarantee RAS precharge time between accesses; between refreshes; and between access and refreshes. The programming bits R0 and
R1 are used to program combinations of RAS precharge
time and RAS low time referenced by positive edges of
CLK. RAS low time is programmed for refreshes only. During an access, the system designer guarantees the time
RAS is asserted through the DP8420V/21V/22V, DP84T22
wait logic. Since inserting wait states into an access increases the length of the CPU signals which are used to
create ADS or ALE and AREQ, the time that RAS is asserted can be guaranteed.
The precharge time is also guaranteed by the DP8420V/
21V/22V, DP84T22. Each RAS output has a separate posi-
tive edge of CLK counter. AREQ is negated setup to a positive edge of CLK to terminate the access. That positive
edge is 1T. The next positive edge is 2T. RAS will not be
asserted until the programmed number of positive edges of
CLK have passed as shown in Figure 25 . Once the programmed precharge time has been met, RAS will be asserted from the positive edge of CLK. However, since there is a
precharge counter per RAS, an access using another RAS
will not be delayed. Precharge time before a refresh is always referenced from the access RAS negating before
RAS0 for the refresh asserting. After a refresh, precharge
time is referenced from RAS3 negating, for the refresh, to
the access RAS asserting.
TL/F/11109 – 39
FIGURE 25. Guaranteeing RAS Precharge (DTACK is Sampled at the ‘‘T2’’ Falling Clock Edge)
30
7.0 RAS and CAS Configuration Modes
The DP8420V/21V/22V, DP84T22 allow the user to configure the DRAM array to contain one, two or four banks of
DRAM. Depending on the functions used, certain considerations must be used when determining how to set up the
DRAM array. Programming address bits C4, C5 and C6
along with bank selects, B0–1, and CAS enables, ECAS0 –
3, determine which RAS or group of RASs and which CAS
or group of CASs will be asserted during an access. Different memory schemes are described. The DP8420V/21V/
22V, DP84T22 is specified driving a heavy load of 72
DRAMs, representing four banks of DRAM with 16-bit words
and 2 parity bits. The DP8420V/21V/22V, DP84T22 can
drive more than 72 DRAMs, but the AC timing must be increased. Since the RAS and CAS outputs are configurable,
all RAS and CAS outputs should be used for the maximum
amount of drive.
7.1 BYTE WRITING
By selecting a configuration in which all CAS outputs are
selected during an access, the ECAS inputs enable a single
or group of CAS outputs to select a byte (or bytes) in a word
size of up to 32 bits. In this case, the RAS outputs are used
to select which of up to 4 banks is to be used as shown in
Figures 26a and 26b . In systems with a word size of 16 bits,
the byte enables can be gated with a high order address bit
to produce four byte enables which gives an equivalent to 8
banks of 16-bit words as shown in Figure 26d . If less memory is required, each CAS should be used to drive each nibble
in the 16-bit word as shown in Figure 26c .
TL/F/11109 – 40
FIGURE 26a. DRAM Array Setup for 32-Bit System (C6, C5, C4 e 1, 1, 0 during Programming)
TL/F/11109 – 41
FIGURE 26b. DRAM Array Setup for 32-Bit, 1 Bank System (C6, C5, C4 e 0, 0, 0 Allowing Error Scrubbing
or C6, C5, C4 e 0, 1, 1 No Error Scrubbing during Programming)
31
7.0 RAS and CAS Configuration Modes (Continued)
TL/F/11109 – 42
FIGURE 26c. DRAM Array Setup for 16-Bit System (C6, C5, C4 e 1, 1, 0 during Programming)
TL/F/11109 – 43
FIGURE 26d. 8 Bank DRAM Array for 16-Bit System (C6, C5, C4 e 1, 1, 0 during Programming)
32
7.0 RAS and CAS Configuration Modes (Continued)
7.2 MEMORY INTERLEAVING
7.3 ADDRESS PIPELINING
Memory interleaving allows the cycle time of DRAMs to be
reduced by having sequential accesses to different memory
banks. Since the DP8420V/21V/22V, DP84T22 have separate precharge counters per bank, sequential accesses will
not be delayed if the accessed banks use different RAS
outputs. To ensure different RAS outputs will be used, a
mode is selected where either one or two RAS outputs will
be asserted during an access. The bank select or selects,
B0 and B1, are then tied to the least significant address bits,
causing a different group of RASs to assert during each
sequential access as shown in Figure 27 . In this figure there
should be at least one clock period of all RAS’s negated
between different RAS’s being asserted to avoid the condition of a CAS before RAS refresh cycle.
Address pipelining allows several access RASs to be asserted at once. Because RASs can overlap, each bank requires either a mode where one RAS and one CAS are used
per bank as shown in Figure 28a or where two RASs and
two CASs are used per bank as shown in Figure 28b . Byte
writing can be accomplished in a 16-bit word system if two
RASs and two CASs are used per bank. In other systems,
WEs (or external gating on the CAS outputs) must be used
to perform byte writing. If WEs are used separate data in
and data out buffers must be used. If the array is not layed
out this way, a CAS to a bank can be low before RAS, which
will cause a refresh of the DRAM, not an access. To take
full advantage of address pipelining, memory interleaving is
used. To memory interleave, the least significant address
bits should be tied to the bank select inputs to ensure that
all ‘‘back to back’’ sequential accesses are not delayed,
since different memory banks are accessed.
TL/F/11109 – 44
FIGURE 27. Memory Interleaving (C6, C5, C4 e 1, 1, 0 during Programming)
33
7.0 RAS and CAS Configuration Modes (Continued)
TL/F/11109 – 45
FIGURE 28a. DRAM Array Setup for 4 Banks Using Address Pipelining (C6, C5, C4 e 1, 1, 1
or C6, C5, C4 e 0, 1, 0 (Also Allowing Error Scrubbing) during Programming)
TL/F/11109 – 46
FIGURE 28b. DRAM Array Setup for Address Pipelining with 2 Banks (C6, C5, C4 e 1, 0, 1
or C6, C5, C4 e 0, 0, 1 (Also Allowing Error Scrubbing) during Programming)
7.4 ERROR SCRUBBING
In error scrubbing during refresh, the user selects one, two
or four RAS and CAS outputs per bank. When performing
error detection and correction, memory is always accessed
as words. Since the CAS signals are not used to select
individual bytes, the ECAS inputs can be tied low as shown
in Figures 29a and 29b .
TL/F/11109 – 47
FIGURE 29a. DRAM Array Setup for 4 Banks Using Error Scrubbing (C6, C5, C4 e 0, 1, 0 during Programming)
TL/F/11109 – 48
FIGURE 29b. DRAM Array Setup for Error Scrubbing with 2 Banks (C6, C5, C4 e 0, 0, 1 during Programming)
34
7.0 RAS and CAS Configuration Modes (Continued)
7.5 PAGE/BURST MODE
In a static column, page or burst mode system, the least
significant bits must be tied to the column address in order
to ensure that the page/burst accesses are to sequential
memory addresses, as shown in Figure 30. In a nibble
mode system, the least significant bits must be tied to the
highest column and row address bits in order to ensure that
sequential address bits are the ‘‘nibble’’ bits for nibble mode
accesses (Figure 30) . The ECAS inputs may then be toggled with the DP8420V/21V/22V’s, DP84T22’s address
latches in fall-through mode, while AREQ is asserted. The
ECAS inputs can also be used to select individual bytes.
When using nibble mode DRAMS, the third and fourth address bits can be tied to the bank select inputs to perform
memory interleaving. In page or static column modes, the
two address bits after the page size can be tied to the bank
select inputs to select a new bank if the page size is exceeded.
TL/F/11109 – 49
*See table below for row, column & bank address bit map. A0, A1 are used for byte addressing in this example.
Addresses
Page Mode/Static Column Mode Page Size
Nibble Mode*
256 Bits/Page
512 Bits/Page
1024 Bits/Page
2048 Bits/Page
Column
Address
C9,R9 e A2,A3
C0 – 8 e X
C0 – 7 e A2– 9
C8 – 10 e X
C0– 8 e A2– 10
C9,10 e X
C0– 9 e A2– 11
C10 e X
C0– 10 e A2– 12
Row
Address
X
X
X
X
X
B0
B1
A4
A5
A10
A11
A11
A12
A12
A13
A13
A14
Assume that the least significant address bits are used for byte addressing. Given a 32-bit system A0,A1 would be
used for byte addressing.
X e DON’T CARE, the user can do as he pleases.
*Nibble mode values for R and C assume a system using 1 Mbit DRAMs.
FIGURE 30. Page, Static Column, Nibble Mode System
35
8.0 Test Mode
Staggered refresh in combination with the error scrubbing
mode places the DP8420V/21V/22V, DP84T22 in test
mode. In this mode, the 24-bit refresh counter is divided into
a 13-bit and 11-bit counter. During refreshes both counters
are incremented to reduce test time.
9.2 CALCULATION OF tRAH AND tASC
There are two clock inputs to the DP8420V/21V/22V,
DP84T22. These two clocks, DELCLK and CLK can either
be tied together to the same clock or be tied to different
clocks running asynchronously at different frequencies.
The clock input, DELCLK, controls the internal delay line
and refresh request clock. DELCLK should be a multiple of
2 MHz. If DELCLK is not a multiple of 2 MHz, tRAH and tASC
will change. The new values of tRAH and tASC can be calculated by the following formulas:
If tRAH was programmed to equal 15 ns then tRAH e
15*(((DELCLK Divisor)* 2 MHz/(DELCLK Frequency))b1)
a 15 ns.
If tRAH was programmed to equal 25 ns then tRAH e
25*(((DELCLK Divisor)* 2 MHz/(DELCLK Frequency))b1)
a 25 ns.
If tASC was programmed to equal 0 ns then tASC e
12.5* ((DELCLK Divisor)* 2 MHz/(DELCLK Frequency)) b
12.5 ns.
If tASC was programmed to equal 10 ns then tASC e
22.5* ((DELCLK Divisor)* 2 MHz/(DELCLK Frequency)) b
22.5 ns.
Since the values of tRAH and tASC are increased or decreased, the time to CAS asserted will also increase or decrease. These parameters can be adjusted by the following
formula:
Delay to CAS e Actual Spec. a Actual tRAH b
Programmed tRAH a Actual tASC b Programmed tASC.
9.0 DRAM Critical Timing
Parameters
The two critical timing parameters, shown in Figure 31 , that
must be met when controlling the access timing to a DRAM
are the row address hold time, tRAH, and the column address setup time, tASC. Since the DP8420V/21V/22V,
DP84T22 contain a precise internal delay line, the values of
these parameters can be selected at programming time.
These values will also increase and decrease if DELCLK
varies from 2 MHz.
9.1 PROGRAMMABLE VALUES OF tRAH AND tASC
The DP8420V/21V/22V, DP84T22 allow the values of tRAH
and tASC to be selected at programming time. For each parameter, two choices can be selected. tRAH, the row address hold time, is measured from RAS asserted to the row
address starting to change to the column address. The two
choices for tRAH are 15 ns and 25 ns, programmable
through address bit C8.
tASC, the column address setup time, is measured from the
column address valid to CAS asserted. The two choices for
tASC are 0 ns and 10 ns, programmable through address bit
C7.
TL/F/11109 – 50
FIGURE 31. tRAH and tASC
36
10.0 Dual Accessing (DP8422V, DP84T22)
has completed. It is important to note that for GRANTB to
transition to Port B, Port A must not be requesting an access at a rising clock edge (or locked) and Port B must be
requesting an access at that rising clock edge. Port A can
request an access through CS and ADS/ALE or CS and
AREQ. Therefore during an interleaved access where CS
and ADS/ALE become asserted before AREQ from the previous access is negated, Port A will retain GRANTB e 0
whether AREQB is asserted or not.
Since there is no chip select for Port B, AREQB must incorporate this signal. This mode of accessing is similar to Mode
1 accessing for Port A.
The DP8422V, DP84T22 has all the functions previously described. In addition to those features, the DP8422V,
DP84T22 also has the capabilities to arbitrate among refresh, Port A and a second port, Port B. This allows two
CPUs to access a common DRAM array. DRAM refresh has
the highest priority followed by the currently granted port.
The ungranted port has the lowest priority. The last granted
port will continue to stay granted even after the access has
terminated, until an access request is received from the ungranted port (see Figure 32a ). The dual access configuration assumes that both Port A and Port B are synchronous
to the system clock. If they are not synchronous to the system clock they should be externally synchronized (Ex. By
running the access requests through several Flip-Flops, see
Figure 34a ).
10.1 PORT B ACCESS MODE
Port B accesses are initiated from a single input, AREQB.
When AREQB is asserted, an access request is generated.
If GRANTB is asserted and a refresh is not taking place or
precharge time is not required, RAS will be asserted when
AREQB is asserted. Once AREQB is asserted, it must stay
asserted until the access is over. AREQB negated, negates
RAS as shown in Figure 32b . Note that if ECAS0 e 1 during
programming the CAS outputs may be held asserted (beyond RASn negating) by continuing to assert the appropriate ECASn inputs (the same as Port A accesses). If Port B
is not granted, the access will begin on the first or second
positive edge of CLK after GRANTB is asserted (See R0,
R1 programming bit definitions) as shown in Figure 32c , assuming that Port A is not accessing the DRAM (CS, ADS/
ALE and AREQ) and RAS precharge for the particular bank
TL/F/11109 – 51
Explanation of Terms
AREQA e
Chip Selected access request from Port A
AREQB e
Chip Selected access request from Port B
LOCK e
Externally controlled LOCKing of the Port
that is currently GRANTed.
FIGURE 32a. DP8422V, DP84T22 Port A/Port B
Arbitration State Diagram. This arbitration
may take place during the ‘‘ACCESS’’ or
‘‘REFRESH’’ state (see Figure 13 ).
TL/F/11109 – 52
FIGURE 32b. Access Request for Port B
TL/F/11109 – 53
FIGURE 32c. Delayed Port B Access
37
10.0 Dual Accessing (DP8422V, DP84T22) (Continued)
Port A or Port B to lock out the other port from the DRAM.
When a Port is locked out of the DRAM, wait states will be
inserted into its access cycle until it is allowed to access
memory. GRANTB is used to multiplex the input control signals and addresses to the DP8422V, DP84T22.
10.2 PORT B WAIT STATE SUPPORT
Advanced transfer acknowledge for Port B, ATACKB, is
used for wait state support for Port B. This output will be
asserted when RAS for the Port B access is asserted, as
shown in Figures 33a and 33b . Once asserted, this output
will stay asserted until AREQB is negated. With external
logic, ATACKB can be made to interface to any CPU’s wait
input as shown in Figure 33c .
10.3.1 GRANTB Output
The output GRANTB determines which port has current access to the DRAM array. GRANTB asserted signifies Port B
has access. GRANTB negated signifies Port A has access
to the DRAM array.
10.3 COMMON PORT A AND PORT B DUAL PORT
FUNCTIONS
An input, LOCK, and an output, GRANTB, add additional
functionality to the dual port arbitration logic. LOCK allows
TL/F/11109 – 54
FIGURE 33a. Non-Delayed Port B Access
TL/F/11109 – 55
FIGURE 33b. Delayed Port B Access
TL/F/11109 – 57
B. Extend ATACK to 1T after RAS goes low.
TL/F/11109–56
A. Extend ATACK to (/2T ((/2 Clock) after RAS goes low.
TL/F/11109 – 58
C. Synchronize ATACKB to CPU B Clock. This is useful if CPU B runs asynchronous to the DP8422V, DP84T22.
FIGURE 33c. Modifying Wait Logic for Port B
38
10.0 Dual Accessing (DP8422V, DP84T22) (Continued)
currently granted, tries to access the DRAM array, the
GRANTB output will transition from a rising clock edge from
AREQ or AREQB negating and will precede the RAS for the
access by one or two clock periods. GRANTB will then stay
in this state until the other port requests an access and the
currently granted port is not accessing the DRAM as shown
in Figure 34b .
Since the DP8422V, DP84T22 has only one set of address
inputs, the signal is used, with the addition of buffers, to
allow the currently granted port’s addresses to reach the
DP8422V, DP84T22. The signals which need to be bufferred are R0–10, C0–10, B0–1, ECAS0 – 3, WE, and
LOCK. All other inputs are not common and do not have to
be buffered as shown in Figure 34a. If a Port, which is not
TL/F/11109 – 59
*If Port B is synchronous the Request Synchronizing logic will not be required.
FIGURE 34a. Dual Accessing with the DP8422V, DP84T22 (System Block Diagram)
39
10.0 Dual Accessing (DP8422V, DP84T22) (Continued)
TL/F/11109 – 60
FIGURE 34b. Wait States during a Port B Access
40
10.0 Dual Accessing (DP8422V, DP84T22) (Continued)
refreshes, it only keeps GRANTB in the same state even if
the other port requests an access, as shown in Figure 35 .
LOCK can be used by either port.
10.3.2 LOCK Input
When the LOCK input is asserted, the currently granted port
can ‘‘lock out’’ the other port through the insertion of wait
states to that port’s access cycle. LOCK does not disable
TL/F/11109 – 61
FIGURE 35. LOCK Function
10.4 TRI-STATE OUTPUTS (DP84T22V Only)
If OE is negated, the output buffers are at TRI-STATE (highThis version is a metal option on the DP8420V/21V/22V-33
Z) making the board level circuit testing easier. The time
DRAM controllers. It comes in a 84-pin PLCC and implepenalty for the TRI-STATE option has been minimized makments TRI-STATE output capabilities. It has only one extra
ing this option attractive to high performance designs. This
pin OE. When OE is asserted the output buffers are enabled
part is functionally compatible to the DP8422A-20, -25.
allowing the DRAM controller to interface to the DRAM array.
TRI-STATE Output Drivers
TL/F/11109 – 62
41
11.0 Absolute Maximum Ratings (Note 1)
All Input or Output Voltage
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Temperature under Bias
Storage Temperature
with Respect to GND
Power Dissipation
ESD Rating
Temp Cycle
0§ C to a 70§ C
b 65§ C to a 150§ C
@
b 0.5V to a 7V
20 MHz
0.5W
2000V
3000 of 0/125§ C
12.0 DC Electrical Characteristics TA e 0§ C to a 70§ C, VCC e 5V g 10%, GND e 0V
Symbol
Parameter
Conditions
VIH
Logical 1 Input Voltage
Tested with a Limited
Functional Pattern
VIL
Logical 0 Input Voltage
Tested with a Limited
Functional Pattern
VOH1
Q and WE Outputs
IOH e b10 mA
VOL1
Q and WE Outputs
IOL e 10 mA
VOH2
All Outputs except Qs, WE
IOH e b3 mA
VOL2
All Outputs except Qs, WE
IOL e 3 mA
IIN
Input Leakage Current
VIN e VCC or GND
IIL ML
ML Input Current (Low)
VIN e GND
ICC1
Standby Current
CLK at 8 MHz (VIN e VCC or GND)
ICC1
Standby Current
CLK at 20 MHz (VIN e VCC or GND)
ICC1
ICC2
Min
Typ
Max
Units
2.0
VCC a 0.5
V
b 0.5
0.8
V
VCC b 1.0
V
0.5
VCC b 1.0
V
V
0.5
b 10
V
10
mA
200
mA
6
15
mA
8
17
mA
Standby Current
CLK at 33 MHz (VIN e VCC or GND)
10
20
mA
Supply Current
CLK at 8 MHz (Inputs Active)
(ILOAD e 25 pF) (VIN e VCC or GND)
25
45
mA
ICC2
Supply Current
CLK at 20 MHz (Inputs Active)
(ILOAD e 25 pF) (VIN e VCC or GND)
65
90
mA
ICC2
Supply Current
CLK at 33 MHz (Inputs Active)
(ILOAD e 25 pF) (VIN e VCC or GND)
115
150
mA
IOZH
Leakage Current
VCC e Max
VO e VCC b 1.0V
10
mA
IOZL
Leakage Current
VCC e Max
VO e 0.5V
b 10
mA
CIN*
Input Capacitance
fIN at 1 MHz
10
pF
*CIN is not 100% tested.
Note 1: ‘‘Absolute Maximum Ratings’’ are the values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation.
Note 2: Input pulse 0V to 3V; tR e tF e 2.5 ns. Input reference point on AC measurements is 1.5V. Output reference point is 1.5V.
Note 3: AC Production testing is done at 50 pF.
42
13.0 AC Timing Parameters
300 – 315 Mode 0 access parameters used in both single
and dual access applications
Two speed selections are given, the DP8420V/21V/22V-33
and the DP84T22-25. The differences between the two
parts are the maximum operating frequencies of the input
CLKs and the maximum delay specifications. Low frequency
applications may use the ‘‘-33’’ part to gain improved timing.
The AC timing parameters are grouped into sectional numbers as shown below. These numbers also refer to the timing diagrams.
1 – 36
Common parameters to all modes of operation
50 – 56
Difference parameters used to calculate;
RAS low time,
RAS precharge time,
CAS high time and
CAS low time
100 – 121 Common dual access parameters used for Port
B accesses and inputs and outputs used only in
dual accessing
200 – 212 Refresh parameters
400 – 416 Mode 1 access parameters used in both single
and dual access applications
450 – 455 Special Mode 1 access parameters which supersede the 400 – 416 parameters when dual accessing
500 – 506 Programming parameters
Unless otherwise stated VCC e 5.0V g 10%, 0 k TA k
70§ C, the output load capacitance is typical for 4 banks of
18 DRAMs per bank, including trace capacitance (see Note
2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0 – 8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
TL/F/11109 – 63
FIGURE 36. Clock, DELCLK Timing
43
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
Common Parameter
Description
CL
CH
Min
Max
Min
Max
1
fCLK
CLK Frequency
0
33
0
33
2
tCLKP
CLK Period
30
30
3, 4
tCLKPW
CLK Pulse Width
12
12
5
fDCLK
DELCLK Frequency
6
20
6
20
6
tDCLKP
DELCLK Period
50
166
50
166
7, 8
tDCLKPW
DELCLK Pulse Width
12
12
9a
tPRASCAS0
RAS Asserted to CAS Asserted
(tRAH e 15 ns, tASC e 0 ns)
30
30
9b
tPRASCAS1
RAS Asserted to CAS Asserted
(tRAH e 15 ns, tASC e 10 ns)
40
40
9c
tPRASCAS2
(RAS Asserted to CAS Asserted
(tRAH e 25 ns, tASC e 0 ns)
40
40
9d
tPRASCAS3
(RAS Asserted to CAS Asserted
(tRAH e 25 ns, tASC e 10 ns)
50
50
10a
tRAH
Row Address Hold Time (tRAH e 15)
15
15
10b
tRAH
Row Address Hold Time (tRAH e 25)
25
25
11a
tASC
Column Address Setup Time (tASC e 0)
0
0
11b
tASC
Column Address Setup Time (tASC e 10)
10
10
12
tPCKRAS
CLK High to RAS Asserted
following Precharge
18
22
13
tPARQRAS
AREQ Negated to RAS Negated
25
29
14
tPENCL
ECAS0–3 Asserted to CAS Asserted
15
22
15
tPENCH
ECAS0–3 Negated to CAS Negated
14
21
16
tPARQCAS
AREQ Negated to CAS Negated
36
43
17
tPCLKWH
CLK to WAIT Negated
25
25
18
tPCLKDL0
CLK to DTACK Asserted
(Programmed as DTACK of 1/2, 1, 1(/2
or if WAITIN is Asserted)
23
23
29
29
19
tPEWL
ECAS Negated to WAIT Asserted
during a Burst Access
20
tSECK
ECAS Asserted Setup to CLK High to
Recognize the Rising Edge of CLK
during a Burst Access
44
13
13
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
Common Parameter
Description
CL
Min
21
tPEDL
CH
Max
Min
Max
ECAS Asserted to DTACK
Asserted during a Burst Access
(Programmed as DTACK0)
29
29
30
30
22
tPEDH
ECAS Negated to DTACK
Negated during a Burst Access
23
tSWCK
WAITIN Asserted Setup to CLK
24
tPWINWEH
WIN Asserted to WE Asserted
18
28
25
tPWINWEL
WIN Negated to WE Negated
18
28
26
tPAQ
Row, Column Address Valid to
Q0–8, 9, 10 Valid
20
29
27
tPCINCQ
COLINC Asserted to Q0 – 8, 9, 10
Incremented
24
33
28
tSCINEN
COLINC Asserted Setup to ECAS
Asserted to Ensure tASC e 0 ns
14
16
29a
tSARQCK1
AREQ, AREQB Negated Setup to CLK
High with 1 Period of Precharge
25
25
29b
tSARQCK2
AREQ, AREQB Negated Setup to CLK High
with l1 Period of Precharge Programmed
11
11
30
tPAREQDH
AREQ Negated to DTACK Negated
20
20
31
tPCKCAS
CLK High to CAS Asserted
when Delayed by WIN
21
28
32
tSCADEN
Column Address Setup to ECAS
Asserted to Guarantee tASC e 0
10
11
33
tWCINC
COLINC Pulse Width
10
10
34a
tPCKCL0
CLK High to CAS Asserted following
Precharge (tRAH e 15 ns, tASC e 0 ns)
65
73
34b
tPCKCL1
CLK High to CAS Asserted following
Precharge (tRAH e 15 ns, tASC e 10 ns)
75
83
34c
tPCKCL2
CLK High to CAS Asserted following
Precharge (tRAH e 25 ns, tASC e 0 ns)
75
83
34d
tPCKCL3
CLK High to CAS Asserted following
Precharge (tRAH e 25 ns, tASC e 10 ns)
85
93
35
tCAH
Column Address Hold Time
(Interleave Mode Only)
36
tPCQR
CAS Asserted to Row Address
Valid (Interleave Mode Only)
5
5
25
25
70
45
70
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
50
tD1
Difference
Parameter Description
CL
CH
Min
Max
Min
Max
(AREQ or AREQB Negated to RAS
Negated) Minus (CLK High to RAS
Asserted)
9
9
51
tD2
(CLK High to Refresh RAS Negated)
Minus (CLK High to RAS Asserted)
7
7
52
tD3a
(ADS Asserted to RAS Asserted
(Mode 1)) Minus (AREQ Negated
to RAS Negated)
4
4
2
2
53
tD3b
(CLK High to RAS Asserted (Mode 0))
Minus (AREQ Negated to RAS Negated)
54
tD4
(ECAS Asserted to CAS Asserted)
Minus (ECAS Negated to CAS Negated)
55
tD5
(CLK to Refresh RAS Asserted) Minus
(CLK to Refresh RAS Negated)
4
4
52
tD6
(AREQ Negated to RAS Negated)
Minus (ADS Asserted to RAS
Asserted (Mode 1))
5
5
b5
5
b5
DP8420V/21V/22V-33
Number
Symbol
TRI-STATE
Parameter Description
CL
Min
DP84T22-25
CH
Max
Min
5
CL
Max
Min
CH
Max
Min
Max
80
tPZL
Delay from TRI-STATE
to Low Level
15
22
81
tPZH
Delay from TRI-STATE
to High Level
18
25
82
tPLZ
Delay from TRI-STATE
to TRI-STATE
18
25
83
tPHZ
Delay from TRI-STATE
to TRI-STATE
18
25
46
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
Common Dual Access
Parameter Description
CL
Min
CH
Max
Min
Max
100
tHCKARQB
AREQB Negated Held from CLK High
2
2
101
tSARQBCK
AREQB Asserted Setup to CLK High
5
102
tPAQBRASL
AREQB Asserted to RAS Asserted
29
33
103
tPAQBRASH
AREQB Negated to RAS Negated
24
28
105
tPCKRASG
CLK High to RAS Asserted for
Pending Port B Access
37
41
106
tPAQBATKBL
AREQB Asserted to ATACKB Asserted
37
37
107
tPCKATKB
CLK High to ATACKB Asserted
for Pending Access
45
45
108
tPCKGH
CLK High to GRANTB Asserted
28
28
109
tPCKGL
CLK High to GRANTB Negated
26
26
110
tSADDCKG
Row Address Setup to CLK High That
Asserts RAS following a GRANTB
Change to Ensure tASR e 0 ns for Port B
7
11
LOCK Asserted Setup to CLK Low
to Lock Current Port
4
4
5
111
tSLOCKCK
112
tPAQATKBH
AREQ Negated to ATACKB Negated
16
113
tPAQBCASH
AREQB Negated to CAS Negated
38
114
tSADAQB
Address Valid Setup to AREQB Asserted
6
10
116
tHCKARQG
AREQ Negated Held from CLK High
5
5
117
tWAQB
AREQB High Pulse Width
to Guarantee tASR e 0 ns
17
19
118a
tPAQBCAS0
AREQB Asserted to CAS Asserted
(tRAH e 15 ns, tASC e 0 ns)
79
86
118b
tPAQBCAS1
AREQB Asserted to CAS Asserted
(tRAH e 15 ns, tASC e 10 ns)
89
96
118c
tPAQBCAS2
AREQB Asserted to CAS Asserted
(tRAH e 25 ns, tASC e 0 ns)
89
96
118d
tPAQBCAS3
AREQB Asserted to CAS Asserted
(tRAH e 25 ns, tASC e 10 ns)
99
106
120a
tPCKCASG0
CLK High to CAS Asserted
for Pending Port B Access
(tRAH e 15 ns, tASC e 0 ns)
84
91
CLK High to CAS Asserted
for Pending Port B Access
(tRAH e 15 ns, tASC e 10 ns)
94
101
CLK High to CAS Asserted
for Pending Port B Access
(tRAH e 25 ns, tASC e 0 ns)
94
101
CLK High to CAS Asserted
for Pending Port B Access
(tRAH e 25 ns, tASC e 10 ns)
104
111
120b
120c
120d
121
tPCKCASG1
tPCKCASG2
tPCKCASG3
tSBADDCKG
Bank Address Valid Setup to CLK
High That Starts RAS
for Pending Port B Access
47
5
16
45
5
13.0 AC Timing Parameters (Continued)
TL/F/11109 – 64
FIGURE 37. 100: Dual Access Port B
TL/F/11109 – 65
FIGURE 38. 100: Port A and Port B Dual Access
48
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
Refresh Parameter
Description
CL
Min
CH
Max
Min
Max
200
tSRFCK
RFSH Asserted Setup to CLK High
16
16
201
tSDRFCK
DISRFSH Asserted Setup to CLK High
16
16
202
tSXRFCK
EXTENDRF Setup to CLK High
8
204
tPCKRFL
CLK High to RFIP Asserted
26
205
tPARQRF
AREQ Negated to RFIP Asserted
38
38
206
tPCKRFH
CLK High to RFIP Negated
41
41
207
tPCKRFRASH
CLK High to Refresh RAS Negated
26
30
208
tPCKRFRASL
CLK High to Refresh RAS Asserted
20
24
209a
tPCKCL0
CLK High to CAS Asserted
during Error Scrubbing
(tRAH e 15 ns, tASC e 0 ns)
64
73
CLK High to CAS Asserted
during Error Scrubbing
(tRAH e 15 ns, tASC e 10 ns)
74
83
CLK High to CAS Asserted
during Error Scrubbing
(tRAH e 25 ns, tASC e 0 ns)
74
83
CLK High to CAS Asserted
during Error Scrubbing
(tRAH e 25 ns, tASC e 10 ns)
85
94
209b
209c
209d
tPCKCL1
tPCKCL2
tPCKCL3
8
9
26
210
tWRFSH
RFSH Pulse Width
211
tPCKRQL
CLK High to RFRQ Asserted
22
9
22
212
tPCKRQH
CLK High to RFRQ Negated
22
22
TL/F/11109 – 66
FIGURE 39. 200: Refresh Timing
49
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
Mode 0 Access
Parameter Description
CL
Min
CH
Max
Min
300
tSCSCK
CS Asserted to CLK High
8
8
301a
tSALECKNL
ALE Asserted Setup to CLK High
Not Using On-Chip Latches or
if Using On-Chip Latches and
B0, B1, Are Constant, Only 1 Bank
11
11
ALE Asserted Setup to CLK High,
if Using On-Chip Latches if B0, B1
Can Change, More Than One Bank
20
20
301b
tSALECKL
302
tWALE
ALE Pulse Width
10
10
303
tSBADDCK
Bank Address Valid Setup to CLK High
10
10
304
tSADDCK
Row, Column Valid Setup to
CLK High to Guarantee
tASR e 0 ns
6
10
Row, Column, Bank Address
Held from ALE Negated
(Using On-Chip Latches)
6
6
Row, Column, Bank Address
Setup to ALE Negated
(Using On-Chip Latches)
1
1
305
306
tHASRCB
tSRCBAS
Max
307
tPCKRL
CLK High to RAS Asserted
19
23
308a
tPCKCL0
CLK High to CAS Asserted
(tRAH e 15 ns, tASC e 0 ns)
65
72
308b
tPCKCL1
CLK High to CAS Asserted
(tRAH e 15 ns, tASC e 10 ns)
75
82
308c
tPCKCL2
CLK High to CAS Asserted
(tRAH e 25 ns, tASC e 0 ns)
75
82
308d
tPCKCL3
CLK High to CAS Asserted
(tRAH e 25 ns, tASC e 10 ns)
85
92
309
tHCKALE
ALE Negated Hold from CLK High
0
0
310
tSWINCK
WIN Asserted Setup to CLK High
to Guarantee CAS is Delayed
b 16
b 16
311
tPCSWL
CS Asserted to WAIT Asserted
20
20
312
tPCSWH
CS Negated to WAIT Negated
20
20
313
tPCLKDL1
CLK High to DTACK Asserted
(Programmed as DTACK0)
27
27
314
tPALEWL
ALE Asserted to WAIT Asserted
(CS is Already Asserted)
21
21
315
316
317
AREQ Negated to CLK High That Starts
Access RAS to Guarantee tASR e 0 ns
(Non-Interleaved Mode Only)
tPCKCV0
tPCKCV1
27
31
CLK High to Column
Address Valid
(tRAH e 15 ns, tASC e 0 ns)
58
67
CLK High to Column
Address Valid
(tRAH e 25 ns, tASC e 0 ns)
68
75
50
13.0 AC Timing Parameters (Continued)
TL/F/11109 – 67
FIGURE 40. 300: Mode 0 Timing
51
13.0 AC Timing Parameters (Continued)
TL/F/11109 – 68
(Programmed as C4 e 1, C5 e 1, C6 e 1)
FIGURE 41. 300: Mode 0 Interleaving
52
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
Mode 1 Access
Parameter Description
CL
Min
CH
Max
Min
400a
tSADSCK1
ADS Asserted Setup to CLK High
9
9
400b
tSADSCKW
ADS Asserted Setup to CLK
(to Guarantee Correct WAIT
or DTACK Output; Doesn’t Apply for DTACK0)
19
19
4
Max
401
tSCSADS
CS Setup to ADS Asserted
402
tPADSRL
ADS Asserted to RAS Asserted
20
4
24
403a
tPADSCL0
ADS Asserted to CAS Asserted
(tRAH e 15 ns, tASC e 0 ns)
70
77
403b
tPADSCL1
ADS Asserted to CAS Asserted
(tRAH e 15 ns, tASC e 10 ns)
80
87
403c
tPADSCL2
ADS Asserted to CAS Asserted
(tRAH e 25 ns, tASC e 0 ns)
80
87
403d
tPADSCL3
ADS Asserted to CAS Asserted
(tRAH e 25 ns, tASC e 10 ns)
90
97
404
tSADDADS
Row Address Valid Setup to ADS
Asserted to Guarantee tASR e 0 ns
6
11
405
tHCKADS
ADS Negated Held from CLK High
0
0
406
tSWADS
WAITIN Asserted Setup to ADS
Asserted to Guarantee DTACK0
Is Delayed
0
0
407
tSBADAS
Bank Address Setup to ADS Asserted
6
6
408
tHASRCB
Row, Column, Bank Address Held from
ADS Asserted (Using On-Chip Latches)
6
6
409
tSRCBAS
Row, Column, Bank Address Setup to
ADS Asserted (Using On-Chip Latches)
1
1
410
tWADSH
ADS Negated Pulse Width
12
17
411
tPADSD
ADS Asserted to DTACK Asserted
(Programmed as DTACK0)
412
tSWINADS
WIN Asserted Setup to ADS Asserted
(to Guarantee CAS Delayed during
Writes Accesses)
29
b 10
29
b 10
413
tPADSWL0
ADS Asserted to WAIT Asserted
(Programmed as WAIT0, Delayed Access)
19
19
414
tPADSWL1
ADS Asserted to WAIT Asserted
(Programmed WAIT 1/2 or 1)
22
22
415
tPCLKDL1
CLK High to DTACK Asserted
(Programmed as DTACK0,
Delayed Access)
27
27
416
417
AREQ Negated to ADS Asserted
to Guarantee tASR e 0 ns
(Non Interleaved Mode Only)
tPADSCV0
27
ADS Asserted to Column
Address Valid
(tRAH e 15 ns, tASC e 0 ns)
29
51
53
60
13.0 AC Timing Parameters (Continued)
TL/F/11109 – 69
FIGURE 42. 400: Mode 1 Timing
54
13.0 AC Timing Parameters (Continued)
TL/F/11109 – 70
FIGURE 43. 400: COLINC Page/Static Column Access Timing
55
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
Mode 1 Dual Access
Parameter Description
CL
Min
450
tSADDCKG
Row Address Setup to CLK High That
Asserts RAS following a GRANTB
Port Change to Ensure tASR e 0 ns
CH
Max
10
Min
Max
12
451
tPCKRASG
CLK High to RAS Asserted
for Pending Access
30
34
452
tPCLKDL2
CLK to DTACK Asserted for Delayed
Accesses (Programmed as DTACK0)
37
37
453a
tPCKCASG0
CLK High to CAS Asserted
for Pending Access
(tRAH e 15 ns, tASC e 0 ns)
81
88
CLK High to CAS Asserted
for Pending Access
(tRAH e 15 ns, tASC e 10 ns)
91
98
CLK High to CAS Asserted
for Pending Access
(tRAH e 25 ns, tASC e 0 ns)
91
98
CLK High to CAS Asserted
for Pending Access
(tRAH e 25 ns, tASC e 10 ns)
101
108
453b
453c
453d
tPCKCASG1
tPCKCASG2
tPCKCASG3
454
tSBADDCKG
Bank Address Valid Setup to CLK High
that Asserts RAS for Pending Access
3
3
455
tSADSCK0
ADS Asserted Setup to CLK High
8
8
56
13.0 AC Timing Parameters (Continued)
Unless otherwise stated VCC e 5.0V g 10%, 0§ C k TA k 70§ C, the output load capacitance is typical for 4 banks of 18 DRAMs
per bank, including trace capacitance (Note 2).
Two different loads are specified:
CL e 50 pF loads on all outputs except
CL e 150 pF loads on Q0–8, 9, 10 and WE; or
CH e 50 pF loads on all outputs except
CH e 125 pF loads on RAS0 – 3 and CAS0 –3 and
CH e 380 pF loads on Q0 – 8, 9, 10 and WE.
DP8420V/21V/22V and DP84T22V
Number
Symbol
Programming
Parameter Description
CL
Min
6
CH
Max
Min
500
tHMLADD
Mode Address Held from ML Negated
501
tSADDML
Mode Address Setup to ML Negated
6
6
502
tWML
ML Pulse Width
12
12
503
tSADAQML
Mode Address Setup to AREQ Asserted
0
0
504
tHADAQML
Mode Address Held from AREQ Asserted
30
30
505
tSCSARQ
CS Asserted Setup to
AREQ Asserted
6
6
506
tSMLARQ
ML Asserted Setup to AREQ Asserted
6
6
Max
6
TL/F/11109 – 71
FIGURE 44. 500: Programming
57
for external damping resistors on the printed circuit board
(or wire-wrap board) because they may be needed. The
value of these damping resistors (if needed) will vary depending upon the output, the capacitance of the load,
and the characteristics of the trace as well as the routing
of the trace. The value of the damping resistor also may
vary between the wire-wrap board and the printed circuit
board. To determine the value of the series damping resistor it is recommended to use an oscilloscope and look
at the furthest DRAM from the DP8420V/21V/22V,
DP84T22. The undershoot of RAS, CAS, WE and the addresses should be kept to less than 0.5V below ground
by varying the value of the damping resistor. The damping resistors should be placed as close as possible with
short leads to the driver outputs of the DP8420V/21V/
22V, DP84T22.
5. The circuit board must have a good VCC and ground
plane connection. If the board is wire-wrapped, the VCC
and ground pins of the DP8420V/21V/22V, DP84T22,
the DRAM associated logic and buffer circuitry must be
soldered to the VCC and ground planes.
6. The traces from the DP8420V/21V/22V, DP84T22 to the
DRAM should be as short as possible.
14.0 Functional Differences
between the DP8420V/21V/22V,
DP84T22 and the DP8420/21/22
1. Extending the Column Address Strobe (CAS) after
AREQ Transitions High
The DP8420V/21V/22V, DP84T22 allows CAS to be asserted for an indefinite period of time beyond AREQ (or
AREQB, DP8422V, DP84T22 only. Scrubbing refreshes
are not affected.) being negated by continuing to assert
the appropriate ECAS inputs. This feature is allowed as
long as the ECAS0 input was negated during programming. The DP8420/21/22 does not allow this feature.
2. Dual Accessing
The DP8420V/21V/22V, DP84T22 asserts RAS either
one or two clock periods after GRANTB has been asserted or negated depending upon how the R0 bit was programmed during the mode load operation. The
DP8420/21/22 will always start RAS one clock period
after GRANTB is asserted or negated. The above statements assume that RAS precharge has been completed
by the time GRANTB is asserted or negated.
3. Refresh Request Output (RFRQ)
7. ECAS0 should be held low during programming if the user
wishes that the DP8420V/21V/22V, DP84T22 be compatible with a DP8420/21/22 design.
8. Parameter Changes due to Loading
All A.C. parameters are specified with the equivalent load
capacitances, including traces, of 64 DRAMs organized
as 4 banks of 18 DRAMs each. Maximums are based on
worst-case conditions. If an output load changes then the
A.C. timing parameters associated with that particular
output must be changed. For example, if we changed our
output load to
C e 250 pF loads on RAS0 – 3 and CAS0 –3
C e 760 pF loads on Q0 – 9 and WE
we would have to modify some parameters (not all calculated here)
$308a clock to CAS asserted
(tRAH e 15 ns, tASC e 0 ns)
A ratio can be used to figure out the timing change per
change in capacitance for a particular parameter by using
the specifications and capacitances from heavy and light
load timing.
The DP8420V/21V/22V, DP84T22 allows RFRQ (refresh
request) to be output on the WE output pin given that
ECAS0 was negated during programming or the controller was programmed to function in the address pipelining
(memory interleaving) mode. The DP8420/21/22 only allows RFRQ to be output during the address pipelining
mode.
4. Clearing the Refresh Request Clock Counter
The DP8420V/21V/22V, DP84T22 allows the internal refresh request clock counter to be cleared by negating
DISRFSH and asserting RFSH for at least 500 ns. The
DP8420/21/22 clears the internal refresh request clock
counter if DISRFSH remains low for at least 500 ns. Once
the internal refresh request clock counter is cleared the
user is guaranteed that an internally generated RFRQ will
not be generated for at least 13 ms – 15 ms (depending
upon how programming bits C0, 1, 2, 3 were programmed).
15.0 DP8420V/21V/22V, DP84T22
User Hints
Ratio e
1. All inputs to the DP8420V/21V/22V, DP84T22 should be
tied high, low or the output of some other device.
$308a w/Heavy Load b $308a w/Light Load
CH(CAS) b CL(CAS)
79 ns b 72 ns
7 ns
e
125 pF b 50 pF
75 pF
$308a (actual) e (capacitance difference c
ratio) a $308a (specified)
7 ns
e (250 pF b 125 pF)
a 79 ns
75 pF
e 11.7 ns a 79 ns
e 90.7 ns @ 250 pF load
9. It is required that the user perform a hardware reset to
the DP8420V/21V/22V, DP84T22 before programming
and using the chip. A hardware reset consists of asserting both ML and DISRFSH for a minimum of 16 positive
edges of CLK, see Section 3.1.
Note: One signal is active high. COLINC (EXTNDRF) should be tied low
to disable.
e
2. Each ground on the DP8420V/21V/22V, DP84T22 must
be decoupled to the closest on-chip supply (VCC) with
0.1 mF ceramic capacitor. This is necessary because
these grounds are kept separate inside the DP8420V/
21V/22V, DP84T22. The decoupling capacitors should
be placed as close as possible with short leads to the
ground and supply pins of the DP8420V/21V/22V,
DP84T22.
3. The output called ‘‘CAP’’ should have a 0.1 mF capacitor
to ground.
4. The DP8420V/21V/22V, DP84T22 has 20X series
damping resistors built into the output drivers of RAS,
CAS, address and WE/RFRQ. Space should be provided
58
Physical Dimensions inches (millimeters)
Plastic Chip Carrier (V)
Order Number DP8420V-33 or DP8421V-33
NS Package Number V68A
59
DP8420V/21V/22V-33, DP84T22-25 microCMOS Programmable
256k/1M/4M Dynamic RAM Controller/Drivers
Physical Dimensions inches (millimeters) (Continued)
Plastic Chip Carrier (V)
Order Number DP8422V-33 or DP84T22-25
NS Package Number V84A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
Corporation
1111 West Bardin Road
Arlington, TX 76017
Tel: 1(800) 272-9959
Fax: 1(800) 737-7018
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
Europe
Fax: (a49) 0-180-530 85 86
Email: cnjwge @ tevm2.nsc.com
Deutsch Tel: (a49) 0-180-530 85 85
English Tel: (a49) 0-180-532 78 32
Fran3ais Tel: (a49) 0-180-532 93 58
Italiano Tel: (a49) 0-180-534 16 80
National Semiconductor
Hong Kong Ltd.
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
National Semiconductor
Japan Ltd.
Tel: 81-043-299-2309
Fax: 81-043-299-2408
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.