Dynex DS2007SF35 Rectifier diode Datasheet

DS2007SF
DS2007SF
Rectifier Diode
Replaces September 2001 version, DS4189-4.0
DS4189-4.1 December 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VRRM 4000V
■ High Surge Capability
IF(AV) 1594A
IFSM
APPLICATIONS
25000A
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DS2007SF40
4000
DS2007SF39
3900
DS2007SF38
3800
DS2007SF37
3700
DS2007SF36
3600
DS2007SF35
3500
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2007SF36
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS2007SF
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
1594
A
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
2504
A
Continuous (direct) forward current
-
2295
A
1144
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
1797
A
Continuous (direct) forward current
-
1553
A
Conditions
Max.
Units
1225
A
IF
Half wave resistive load
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
1923
A
Continuous (direct) forward current
-
1720
A
820
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
1287
A
Continuous (direct) forward current
-
1050
A
IF
Half wave resistive load
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DS2007SF
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Conditions
Max.
Units
10ms half sine; Tcase = 150oC
20.0
kA
VR = 50% VRRM - 1/4 sine
2.0 x 106
A2s
10ms half sine; Tcase = 150oC
25.0
kA
VR = 0
3.125 x 106
A2s
Parameter
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.022
o
Anode dc
-
0.038
o
Cathode dc
-
0.052
o
C/W
Double side
-
0.004
o
C/W
Single side
-
0.008
o
C/W
Forward (conducting)
-
160
o
Reverse (blocking)
-
150
o
Storage temperature range
-55
175
o
Clamping force
18.0
22.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 19.5kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DS2007SF
CHARACTERISTICS
Symbol
Conditions
Parameter
Min.
Max.
Units
VFM
Forward voltage
At 3400A peak, Tcase = 25oC
-
1.6
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
75
mA
QS
Total stored charge
IF = 2000A, dIRR/dt = 3A/µs,
-
3500
µC
IRR
Peak recovery current
Tcase = 150˚C, VR = 100V
-
110
A
VTO
Threshold voltage
At Tvj = 150˚C
-
0.82
V
Slope resistance
At Tvj = 150˚C
-
0.29
mΩ
rT
CURVES
5000
4000
Measured under pulse
conditions
Instantaneous forward current, IF - (A)
4000
3000
Mean power dissipation - (W)
3000
Tj = 25˚C
Tj = 150˚C
2000
2000
1000
1000
dc
Half wave
3 phase
6 phase
0
0.5
1.0
1.5
2.0
0
0
Instantaneous forward voltage, VF - (V)
Fig.2 Maximum (limit) forward characteristics
VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF
1000
2000
Mean forward current, IF(AV) - (A)
3000
Fig.3 Dissipation curves
Where
A = 0.658789
B = –0.01706
C = 0.000194
D = 0.010358
these values are valid for Tj = 125˚C for IF 500A to 5000A
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DS2007SF
1000
Conditions:
Tj = 150˚C
VR = 100V
IF = 2000A
Reverse recovery current Irr - (A)
Conditions:
Tj = 150˚C
VR = 100V
IF = 2000A
Stored charge, QS - (µC)
10000
1000
100
IF
QS
dIF/dt
IRM
100
0.1
1.0
10
10
0.1
100
1.0
Rate of decay of on-state current, dIF/dt - (A/µs)
Fig.4 Total stored charge
100
Fig.5 Maximum reverse recovery current
2.0
40
0.1
^
= I2 x t
2
30
I2t
10
0
1
10
ms
1
2 3
5
10
20
1.0
50
Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 150˚C)
I2t value - (A2s x 106)
1.5
20
Thermal Impedance - junction to case - (˚C/W)
I2t
Peak half sine forward current - (kA)
10
Rate of decay of forward current, dIF/dt - (A/µs)
Anode side cooled
Double side cooled
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.001
0.001
0.01
0.1
Time - (s)
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Single side
0.038
0.040
0.042
0.043
1.0
10
Fig.7 Maximum (limit) transient thermal impedance junction to case
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DS2007SF
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6x2.0 deep (in both electrodes)
Cathode
Ø76 max
27.0
25.4
Ø48 nom
Ø48 nom
Anode
Nominal weight: 450g
Clamping force: 19.6kN ± 10%
Package outline type code: F
Note:
1. Package maybe supplied with pins and/or tags.
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DS2007SF
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4189-4 Issue No. 4.1 December 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
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