DS2007SF DS2007SF Rectifier Diode Replaces September 2001 version, DS4189-4.0 DS4189-4.1 December 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VRRM 4000V ■ High Surge Capability IF(AV) 1594A IFSM APPLICATIONS 25000A ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DS2007SF40 4000 DS2007SF39 3900 DS2007SF38 3800 DS2007SF37 3700 DS2007SF36 3600 DS2007SF35 3500 Lower voltage grades available. Conditions VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2007SF36 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2007SF CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 1594 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 2504 A Continuous (direct) forward current - 2295 A 1144 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 1797 A Continuous (direct) forward current - 1553 A Conditions Max. Units 1225 A IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 1923 A Continuous (direct) forward current - 1720 A 820 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 1287 A Continuous (direct) forward current - 1050 A IF Half wave resistive load 2/7 www.dynexsemi.com DS2007SF SURGE RATINGS Symbol IFSM I2t IFSM I2t Conditions Max. Units 10ms half sine; Tcase = 150oC 20.0 kA VR = 50% VRRM - 1/4 sine 2.0 x 106 A2s 10ms half sine; Tcase = 150oC 25.0 kA VR = 0 3.125 x 106 A2s Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.022 o Anode dc - 0.038 o Cathode dc - 0.052 o C/W Double side - 0.004 o C/W Single side - 0.008 o C/W Forward (conducting) - 160 o Reverse (blocking) - 150 o Storage temperature range -55 175 o Clamping force 18.0 22.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 19.5kN with mounting compound C Virtual junction temperature C C kN 3/7 www.dynexsemi.com DS2007SF CHARACTERISTICS Symbol Conditions Parameter Min. Max. Units VFM Forward voltage At 3400A peak, Tcase = 25oC - 1.6 V IRRM Peak reverse current At VRRM, Tcase = 150oC - 75 mA QS Total stored charge IF = 2000A, dIRR/dt = 3A/µs, - 3500 µC IRR Peak recovery current Tcase = 150˚C, VR = 100V - 110 A VTO Threshold voltage At Tvj = 150˚C - 0.82 V Slope resistance At Tvj = 150˚C - 0.29 mΩ rT CURVES 5000 4000 Measured under pulse conditions Instantaneous forward current, IF - (A) 4000 3000 Mean power dissipation - (W) 3000 Tj = 25˚C Tj = 150˚C 2000 2000 1000 1000 dc Half wave 3 phase 6 phase 0 0.5 1.0 1.5 2.0 0 0 Instantaneous forward voltage, VF - (V) Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF 1000 2000 Mean forward current, IF(AV) - (A) 3000 Fig.3 Dissipation curves Where A = 0.658789 B = –0.01706 C = 0.000194 D = 0.010358 these values are valid for Tj = 125˚C for IF 500A to 5000A 4/7 www.dynexsemi.com DS2007SF 1000 Conditions: Tj = 150˚C VR = 100V IF = 2000A Reverse recovery current Irr - (A) Conditions: Tj = 150˚C VR = 100V IF = 2000A Stored charge, QS - (µC) 10000 1000 100 IF QS dIF/dt IRM 100 0.1 1.0 10 10 0.1 100 1.0 Rate of decay of on-state current, dIF/dt - (A/µs) Fig.4 Total stored charge 100 Fig.5 Maximum reverse recovery current 2.0 40 0.1 ^ = I2 x t 2 30 I2t 10 0 1 10 ms 1 2 3 5 10 20 1.0 50 Cycles at 50Hz Duration Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 150˚C) I2t value - (A2s x 106) 1.5 20 Thermal Impedance - junction to case - (˚C/W) I2t Peak half sine forward current - (kA) 10 Rate of decay of forward current, dIF/dt - (A/µs) Anode side cooled Double side cooled 0.01 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.001 0.001 0.01 0.1 Time - (s) Effective thermal resistance Junction to case ˚C/W Double side 0.022 0.024 0.026 0.027 Single side 0.038 0.040 0.042 0.043 1.0 10 Fig.7 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DS2007SF PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6x2.0 deep (in both electrodes) Cathode Ø76 max 27.0 25.4 Ø48 nom Ø48 nom Anode Nominal weight: 450g Clamping force: 19.6kN ± 10% Package outline type code: F Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com DS2007SF POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4189-4 Issue No. 4.1 December 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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