AMD DS42514 Stacked multi-chip package (mcp) flash memory and sram Datasheet

DS42514
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL163D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only,
Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
SOFTWARE FEATURES
■ Power supply voltage of 2.7 to 3.3 volt
■ Data Management Software (DMS)
— AMD-supplied software manages data programming and
erasing, enabling EEPROM emulation
— Eases sector erase limitations
■ High performance
— 85 ns maximum access time
■ Package
■ Supports Common Flash Memory Interface (CFI)
— 69-Ball FBGA
■ Erase Suspend/Erase Resume
■ Operating Temperature
— Suspends erase operations to allow programming in same
bank
— –25°C to +85°C
Flash Memory Features
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
■ Secured Silicon (SecSi) Sector: Extra 64 KByte sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function.
— Customer lockable: Can be read, programmed, or erased
just like other sectors. Once locked, data cannot be changed
■ Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
reading array data
■ Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero
■ WP#/ACC input pin
— Write protect (WP#) function allows protection of two outermost
boot sectors, regardless of sector protect status
— Acceleration (ACC) function accelerates program timing
■ Bottom boot block
■ Manufactured on 0.23 µm process technology
■ Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
■ Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
PERFORMANCE CHARACTERISTICS
■ High performance
— 85 ns access time
— Program time: 7 µs/word typical utilizing Accelerate function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million write cycles guaranteed per sector
■ 20 Year data retention at 125°C
— Reliable operation for the life of the system
SRAM Features
■ Power dissipation
— Operating: 50 mA maximum
— Standby: 7 µA maximum
■
■
■
■
CE1#s and CE2s Chip Select
Power down features using CE1#s and CE2s
Data retention supply voltage: 1.5 to 3.3 volt
Byte data control: LB#s (DQ0–DQ7), UB#s (DQ8–DQ15)
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 23756 Rev: B Amendment/2
Issue Date: March 15, 2001
Refer to AMD’s Website (www.amd.com) for the latest information.
GENERAL DESCRIPTION
Am29DL163 Features
The Am29DL163 is a 16 megabit, 3.0 volt-only flash
memory device, organized as 1,048,576 words of 16
bits each or 2,097,152 bytes of 8 bits each. Word mode
data appears on DQ0–DQ15; byte mode data appears on DQ0–DQ7. The device is designed to be
programmed in-system with the standard 3.0 volt VCC
supply, and can also be programmed in standard
EPROM programmers.
The device is available with an access time of 85 ns.
The device is offered in a 69-ball FBGA package.
Standard control pins—chip enable (CE#f), write enable (WE#), and output enable (OE#)—control normal
read and write operations, and avoid bus contention
issues.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into two banks. The device can improve overall
system performance by allowing a host system to program or erase in one bank, then immediately and
simultaneously read from the other bank, with zero latency. This releases the system from waiting for the
completion of program or erase operations.
The Am29DL163D has 4 Mb in Bank 1 and 12 Mb in
Bank 2.
The Secured Silicon (SecSi) Sector is an extra 64
Kbit sector capable of being permanently locked by
AMD or customers. The SecSi Sector Indicator Bit
(DQ7) is permanently set to a 1 if the part is factory
locked, and set to a 0 if customer lockable. This
way, customer lockable parts can never be used to replace a factory locked part.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
ESN (Electronic Serial Number). Customer Lockable
parts may utilize the SecSi Sector as bonus space,
reading and writing like any other flash sector, or may
permanently lock their own code there.
DMS (Data Management Software) allows systems
to easily take advantage of the advanced architecture
2
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
i s a n a dv a n ta ge c om pa r e d to s y s te ms wh e r e
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software
does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD provides this software to simplify system design and
software integration efforts.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or
erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to reading array data.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V CC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memo r y. T h i s c a n b e a c h i e v e d i n - s y s t e m o r v i a
programming equipment.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly reduced in both modes.
DS42514
TABLE OF CONTENTS
Distinctive Characteristics . . . . . . . . . . . . . . . . . . 1
MCP Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Flash Memory Features . . . . . . . . . . . . . . . . . . . . . 1
Architectural Advantages . . . . . . . . . . . . . . . . . . 1
Performance Characteristics. . . . . . . . . . . . . . . . 1
Software Features . . . . . . . . . . . . . . . . . . . . . . . 1
Hardware Features . . . . . . . . . . . . . . . . . . . . . . . 1
SRAM Features . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General Description . . . . . . . . . . . . . . . . . . . . . . . . 2
Am29DL163 Features . . . . . . . . . . . . . . . . . . . . . . 2
Simultaneous Read/Write Operations with Zero
Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . 5
Flash Memory Block Diagram. . . . . . . . . . . . . . . . 6
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . 7
Special Handling Instructions for FBGA Package . 7
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8
Table 1. Device Bus Operations—Flash Word
Mode, CIOf = VIH; SRAM Word Mode,
CIOs = VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 2. Device Bus Operations—Flash Word
Mode, CIOf = VIH; SRAM Byte Mode,
CIOs = VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 3. Device Bus Operations—Flash Byte
Mode, CIOf = VIL; SRAM Byte Mode,
CIOs = VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Word/Byte Configuration . . . . . . . . . . . . . . . . . . . 12
Requirements for Reading Array Data . . . . . . . . . 12
Writing Commands/Command Sequences . . . . . 12
Accelerated Program Operation . . . . . . . . . . . . 12
Autoselect Functions . . . . . . . . . . . . . . . . . . . . . 12
Simultaneous Read/Write Operations with
Zero Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Automatic Sleep Mode . . . . . . . . . . . . . . . . . . . . . 13
RESET#: Hardware Reset Pin . . . . . . . . . . . . . . . 13
Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Device Bank Division . . . . . . . . . . . . . . 13
Table 5. Sector Addresses for Bottom Boot
Sector Devices . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 6. SecSi Sector Addresses for Bottom
Boot Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . 15
Sector/Sector Block Protection and Unprotection 15
Table 7. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection . . . . . . . 15
Write Protect (WP#) . . . . . . . . . . . . . . . . . . . . . . . 15
Temporary Sector/Sector Block Unprotect . . . . . . 15
Figure 1. Temporary Sector Unprotect
Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 2. In-System Sector/Sector Block
Protect and Unprotect Algorithms . . . . . . . . . . . 17
SecSi (Secured Silicon) Sector Flash
Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . .
Factory Locked: SecSi Sector Programmed
and Protected At the Factory . . . . . . . . . . . . . .
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory . . . . .
Hardware Data Protection . . . . . . . . . . . . . . . . . .
Low VCC Write Inhibit . . . . . . . . . . . . . . . . . . . .
Write Pulse “Glitch” Protection . . . . . . . . . . . . .
Logical Inhibit . . . . . . . . . . . . . . . . . . . . . . . . . .
Power-Up Write Inhibit . . . . . . . . . . . . . . . . . . .
Common Flash Memory Interface (CFI) . . . . . . .
Table 8. CFI Query Identification String . . . . . .
Table 9. System Interface String . . . . . . . . . . .
Table 10. Device Geometry Definition . . . . . . .
Table 11. Primary Vendor-Specific
Extended Query . . . . . . . . . . . . . . . . . . . . . . . .
Command Definitions. . . . . . . . . . . . . . . . . . . . . .
Reading Array Data . . . . . . . . . . . . . . . . . . . . . . .
Reset Command . . . . . . . . . . . . . . . . . . . . . . . . .
Autoselect Command Sequence . . . . . . . . . . . . .
Enter SecSi Sector/Exit SecSi Sector
Command Sequence . . . . . . . . . . . . . . . . . . . . . .
Byte/Word Program Command Sequence . . . . .
Unlock Bypass Command Sequence . . . . . . . .
Figure 3. Program Operation . . . . . . . . . . . . . . .
Chip Erase Command Sequence . . . . . . . . . . . .
Sector Erase Command Sequence . . . . . . . . . . .
Erase Suspend/Erase Resume Commands . . . .
Figure 4. Erase Operation . . . . . . . . . . . . . . . . .
Table 12. DS42514 Command Definitions . . . .
Write Operation Status . . . . . . . . . . . . . . . . . . . . .
DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . .
Figure 5. Data# Polling Algorithm . . . . . . . . . . .
RY/BY#: Ready/Busy# . . . . . . . . . . . . . . . . . . . . .
DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 6. Toggle Bit Algorithm . . . . . . . . . . . . . .
DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . .
Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . .
DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . .
DQ3: Sector Erase Timer . . . . . . . . . . . . . . . . . .
Table 13. Write Operation Status . . . . . . . . . . .
Absolute Maximum Ratings. . . . . . . . . . . . . . . . .
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . .
Industrial (I) Devices . . . . . . . . . . . . . . . . . . . . .
VCCf/VCCs Supply Voltage . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . .
CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . .
SRAM DC and Operating Characteristics. . . . . .
Zero-Power Flash . . . . . . . . . . . . . . . . . . . . . . . .
Figure 9. ICC1 Current vs. Time (Showing
Active and Automatic Sleep Currents). . . . . . . .
Figure 10. Typical ICC1 vs. Frequency . . . . . . . .
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 11. Test Setup . . . . . . . . . . . . . . . . . . . .
Table 14. Test Specifications . . . . . . . . . . . . . .
DS42514
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18
18
18
18
19
19
19
19
19
20
20
21
22
22
22
22
23
23
23
24
24
24
25
25
26
27
27
27
28
28
28
29
29
29
29
30
31
31
31
31
32
32
33
34
34
34
35
35
35
3
Key To Switching Waveforms. . . . . . . . . . . . . . . 35
Figure 12. Input Waveforms and Measurement
Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36
SRAM CE#s Timing . . . . . . . . . . . . . . . . . . . . . . 36
Figure 13. Timing Diagram for Alternating
Between SRAM to Flash. . . . . . . . . . . . . . . . . . 36
Flash Read-Only Operations . . . . . . . . . . . . . . . 37
Figure 14. Read Operation Timings . . . . . . . . . 37
Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . 38
Figure 15. Reset Timings . . . . . . . . . . . . . . . . . 38
Flash Word/Byte Configuration (CIOf) . . . . . . . . . 39
Figure 16. CIOf Timings for Read Operations . 39
Figure 17. CIOf Timings for Write Operations. . 39
Flash Erase and Program Operations . . . . . . . . . 40
Figure 18. Program Operation Timings. . . . . . . 41
Figure 19. Accelerated Program Timing
Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 20. Chip/Sector Erase Operation
Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 21. Back-to-back Read/Write Cycle
Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 22. Data# Polling Timings (During
Embedded Algorithms) . . . . . . . . . . . . . . . . . . . 43
Figure 23. Toggle Bit Timings (During
Embedded Algorithms) . . . . . . . . . . . . . . . . . . . 44
Figure 24. DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . 44
Temporary Sector/Sector Block Unprotect . . . . . . 45
Figure 25. Temporary Sector/Sector Block
Unprotect Timing Diagram . . . . . . . . . . . . . . . . 45
Figure 26. Sector/Sector Block Protect and
Unprotect Timing Diagram . . . . . . . . . . . . . . . . 46
Alternate CE#f Controlled Erase and Program
Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 27. Flash Alternate CE#f Controlled
Write (Erase/Program) Operation Timings . . . . 48
4
SRAM Read Cycle . . . . . . . . . . . . . . . . . . . . . . .
Figure 28. SRAM Read Cycle—Address
Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 29. SRAM Read Cycle . . . . . . . . . . . . . .
SRAM Write Cycle . . . . . . . . . . . . . . . . . . . . . . . .
Figure 30. SRAM Write Cycle—WE# Control . .
Figure 31. SRAM Write Cycle—CE1#s Control.
Figure 32. SRAM Write Cycle—UB#s and
LB#s Control . . . . . . . . . . . . . . . . . . . . . . . . . . .
Flash Erase And Programming Performance . .
Flash Latchup Characteristics. . . . . . . . . . . . . . .
Package Pin Capacitance . . . . . . . . . . . . . . . . . .
FLASH Data Retention . . . . . . . . . . . . . . . . . . . . .
SRAM Data Retention Characteristics . . . . . . . .
Figure 33. CE1#s Controlled Data Retention
Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Figure 34. CE2s Controlled Data Retention
Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . .
FLA069—69-Ball Fine-Pitch Grid Array
8 x 11 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . .
Revision A (July 10, 2000) . . . . . . . . . . . . . . . . .
Revision B (December 13, 2000) . . . . . . . . . . . .
Global . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Command Definitions . . . . . . . . . . . . . . . . . . . .
AC Characteristics—Alternate CE#f Controlled
Erase and Program Operations . . . . . . . . . . . .
Revision B+1 (March 7, 2001) . . . . . . . . . . . . . . .
Sector/Sector Block Protection/Unprotection . .
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory . . . . .
Common Flash Memory Interface (CFI) . . . . . .
Revision B+2 (March 15, 2001) . . . . . . . . . . . . . .
DS42514
49
49
50
51
51
52
53
54
54
54
54
55
55
55
56
56
57
57
57
57
57
57
57
57
57
57
57
PRODUCT SELECTOR GUIDE
Part Number
DS42514
Standard Voltage Range: VCC = 2.7–3.3 V
Flash Memory
SRAM
Max Access Time (ns)
85
85
CE# Access (ns)
85
85
OE# Access (ns)
35
45
MCP BLOCK DIAGRAM
VCCf
VSS
A0 to A19
RY/BY#
A0 to A19
A–1
WP#/ACC
RESET#
CE#f
CIOf
16 Mbit
Flash Memory
DQ0 to DQ15/A–1
DQ0 to DQ15/A–1
VCCs/VCCQ VSS/VSSQ
A0
A0 to
to A19
A17
SA
LB#s
UB#s
WE#
OE#
CE1#s
CE2s
CIOs
4 Mbit
Static RAM
DS42514
DQ0 to DQ15/A–1
5
FLASH MEMORY BLOCK DIAGRAM
RY/BY#
X-Decoder
A0–A19
WE#
CE#
CIOf
STATE
CONTROL
&
COMMAND
REGISTER
Status
DQ0–DQ15
Control
WP#/ACC
DQ0–DQ15
6
Lower Bank Address
DS42514
Lower Bank
Latches and
Control Logic
A0–A19
Y-Decoder
A0–A19
X-Decoder
DQ0–DQ15
RESET#
Upper Bank
DQ0–DQ15
A0–A19
Y-Decoder
Upper Bank Address
A0–A19
Latches and Control Logic
OE# CIOf
VCC
VSS
CONNECTION DIAGRAM
69-Ball FBGA
Top View
A1
A5
A6
A10
NC
NC
NC
NC
Flash only
SRAM only
B1
B3
B4
B5
B6
B7
B8
NC
A7
LB#s
WP#/ACC
WE#
A8
A11
C2
C3
C4
C5
C6
C7
C8
C9
A3
A6
UB#s
RESET#
CE2s
A19
A12
A15
D2
D3
D4
D6
D7
D8
D9
A2
A5
A18
NC
A9
A13
NC
E1
E2
E3
E4
E7
E8
E9
E10
NC
A1
A4
A17
A10
A14
NC
NC
F1
F2
F3
F4
F7
F8
F9
F10
NC
A0
VSS
DQ1
DQ6
SA
A16
NC
G2
G3
G4
G5
G6
G7
G8
G9
CE#f
OE#
DQ9
DQ3
DQ4
DQ13
DQ15/A-1
CIOf
H2
H3
H4
H5
H6
H7
H8
H9
CE1#s
DQ0
DQ10
VCCf
VCCs
DQ12
DQ7
VSS
Shared
D5
RY/BY#
J3
J4
J5
J6
J7
J8
DQ8
DQ2
DQ11
CIOs
DQ5
DQ14
K1
K5
K6
K10
NC
NC
NC
NC
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
DS42514
7
PIN DESCRIPTION
A0–A17
LOGIC SYMBOL
= 18 Address Inputs (Common)
18
A–1, A18–A19 = 3 Address Inputs (Flash)
SA
A0–A17
= Highest Order Address Input
(SRAM) Byte mode
A–1, A18–A19
DQ0–DQ15
= 16 Data Inputs/Outputs (Common)
SA
CE#f
= Chip Enable (Flash)
CE#s
= Chip Enable (SRAM)
OE#
= Output Enable (Common)
WE#
= Write Enable (Common)
RY/BY#
= Ready/Busy Output
UB#s
= Upper Byte Control (SRAM)
LB#s
= Lower Byte Control (SRAM)
CIOf
= I/O Configuration (Flash)
CIOf = VIH = Word mode (x16),
CIOf = VIL = Byte mode (x8)
CIOs
CE#f
16 or 8
DQ0–DQ15
CE1#s
CE2s
OE#
RY/BY#
WE#
WP#/ACC
RESET#
UB#s
LB#s
= I/O Configuration (SRAM)
CIOs = VIH = Word mode (x16),
CIOs = VIL = Byte mode (x8)
CIOf
CIOs
RESET#
= Hardware Reset Pin, Active Low
WP#/ACC
= Hardware Write Protect/
Acceleration Pin (Flash)
VCCf
= Flash 3.0 volt-only single power supply (see Product Selector Guide for
speed options and voltage supply
tolerances)
VCCs
= SRAM Power Supply
VSS
= Device Ground (Common)
NC
= Pin Not Connected Internally
ORDERING INFORMATION
Valid Combination
Order Number
Package Marking
DS42514
DS42514
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The r egis ter is a l atch us ed to s tore th e
commands, along with the address and data information needed to execute the command. The contents of
8
the register serve as inputs to the internal state machine. The state machine outputs dictate the function
of the device. Tables 1 through 3 lists the device bus
operations, the inputs and control levels they require,
and the resulting output. The following subsections describe each of these operations in further detail.
DS42514
Table 1.
Device Bus Operations—Flash Word Mode, CIOf = VIH; SRAM Word Mode, CIOs = VCC
Operation
(Notes 1, 2)
Read from Flash
Write to Flash
Standby
CE#f CE1#s CE2s OE# WE#
H
X
X
L
H
X
X
L
VCC ±
0.3 V
H
X
X
L
H
L
H
L
L
SA
LB#s UB#s RESET#
L
H
X
X
X
H
L/H
DOUT
DOUT
H
L
X
X
X
H
(Note 3)
DIN
DIN
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
H
H
X
L
X
H
H
X
X
L
H
L/H
High-Z
High-Z
Output Disable
H
X
X
L
H
X
X
L
H
X
X
L
H
X
X
L
H
X
X
L
L
Flash Hardware
Reset
X
Sector Protect
(Note 4)
L
Sector Unprotect
(Note 4)
L
Temporary Sector
Unprotect
X
Read from SRAM
Write to SRAM
H
H
L
L
H
H
WP#/ACC
DQ0– DQ7 DQ8–DQ15
(Note 3)
H
H
X
X
X
X
X
X
X
X
L
L/H
High-Z
High-Z
H
L
X
X
X
VID
L/H
DIN
X
H
L
X
X
X
VID
(Note 5)
DIN
X
X
X
X
X
X
VID
(Note 5)
DIN
High-Z
L
L
DOUT
DOUT
H
L
High-Z
DOUT
L
H
DOUT
High-Z
L
L
DIN
DIN
H
L
High-Z
DIN
L
H
DIN
High-Z
L
X
H
L
X
X
H
H
X
X
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 8.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time.
3. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by 40%.
4. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
5. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
DS42514
9
Table 2.
Operation
(Notes 1, 2)
Read from Flash
Write to Flash
Standby
Device Bus Operations—Flash Word Mode, CIOf = VIH; SRAM Byte Mode, CIOs = VSS
CE#f CE1#s CE2s OE# WE#
H
X
X
L
H
X
X
L
VCC ±
0.3 V
H
X
X
L
H
L
H
L
L
SA
WP#/ACC
LB#s
UB#s
DQ0–DQ7 DQ8–DQ15
RESET#
(Note 3) (Note 3)
(Note 4)
L
H
X
X
X
H
L/H
DOUT
DOUT
H
L
L
X
X
H
(Note 3)
DIN
DIN
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
H
H
X
L
X
H
H
X
X
L
H
L/H
High-Z
High-Z
Output Disable
H
X
X
L
H
X
X
L
H
X
X
L
H
X
X
L
H
X
X
L
L
H
H
X
X
X
X
X
X
X
X
L
L/H
High-Z
High-Z
H
L
X
X
X
VID
L/H
DIN
X
H
L
X
X
X
VID
(Note 6)
DIN
X
X
X
X
X
X
VID
(Note 6)
DIN
High-Z
Flash Hardware
Reset
X
Sector Protect
(Note 5)
L
Sector Unprotect
(Note 5)
L
Temporary Sector
Unprotect
X
Read from SRAM
H
L
H
L
H
SA
X
X
H
X
DOUT
High-Z
Write to SRAM
H
L
H
X
L
SA
X
X
H
X
DIN
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 8.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
10
DS42514
Table 3. Device Bus Operations—Flash Byte Mode, CIOf = VIL; SRAM Byte Mode, CIOs = VSS
Operation
(Notes 1, 2)
Read from Flash
Write to Flash
Standby
CE#f CE1#s CE2s
H
X
X
L
H
X
X
L
VCC ±
0.3 V
H
X
X
L
H
L
H
L
L
DQ15/
OE# WE#
A–1
SA
LB#s
UB#s
WP#/ACC
RESET#
DQ0–DQ7 DQ8–DQ15
(Note 3) (Note 3)
(Note 4)
A–1
L
H
X
X
X
H
L/H
DOUT
High-Z
A–1
H
L
X
X
X
H
(Note 3)
DIN
High-Z
X
X
X
X
X
VCC ±
0.3 V
H
High-Z
High-Z
X
H
H
X
L
X
H
H
X
X
X
L
H
L/H
High-Z
High-Z
Output Disable
H
X
X
L
H
X
X
L
H
X
X
L
H
X
X
L
H
x
X
L
L
A–1
H
H
X
X
X
X
X
X
X
X
X
L
L/H
High-Z
High-Z
H
L
X
X
X
VID
L/H
DIN
X
H
L
X
X
X
VID
(Note 6)
DIN
X
X
X
X
X
X
VID
(Note 6)
DIN
High-Z
Flash Hardware
Reset
X
Sector Protect
(Note 5)
L
Sector Unprotect
(Note 5)
L
Temporary
Sector Unprotect
X
Read from
SRAM
H
L
H
X
L
H
SA
X
X
H
X
DOUT
High-Z
Write to SRAM
H
L
H
X
X
L
SA
X
X
H
X
DIN
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 8.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
DS42514
11
Word/Byte Configuration
The CIOf pin controls whether the device data I/O pins
operate in the byte or word configuration. If the CIOf
pin is set at logic ‘1’, the device is in word configuration, DQ0–DQ15 are active and controlled by CE# and
OE#.
If the CIOf pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE#f and OE# pins to VIL. CE#f is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at V I H . The CIOf pin determines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
See “Requirements for Reading Array Data” for more
information. Refer to the AC Flash Read-Only Operations table for timing specifications and to Figure 14 for
the timing diagram. I CC1 in the DC Characteristics
table represents the active current specification for
reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE#f to VIL, and OE# to VIH.
For program operations, the CIOf pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more
information.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The
“Word/Byte Configuration” section has details on programming data to the device using both standard and
Unlock Bypass command sequences.
12
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 5–6 indicate the
address space that each sector occupies. The device
address space is divided into two banks: Bank 1 contains the boot/parameter sectors, and Bank 2 contains
the larger, code sectors of uniform size. A “bank address” is the address bits required to uniquely select a
bank. Similarly, a “sector address” is the address bits
required to uniquely select a sector.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC
Characteristics section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput
at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC pin must not
be at VHH for operations other than accelerated programming, or device damage may result. In addition,
the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more
information.
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank
of memory while programming or erasing in the other
bank of memory. An erase operation may also be suspended to read from or program to another location
within the same bank (except the sector being
erased). Figure 21 shows how read and write cycles
may be initiated for simultaneous operation with zero
latency. ICC6 and ICC7 in the DC Characteristics table
represent the current specifications for read-while-program and read-while-erase, respectively.
DS42514
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE#f and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
V IH .) If CE#f and RESET# are held at V IH , but not
within VCC ± 0.3 V, the device will be in the standby
mode, but the standby current will be greater. The device requires standard access time (t CE ) for read
access when the device is in either of these standby
modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
I CC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC +
30 ns. The automatic sleep mode is independent of
the CE#f, WE#, and OE# control signals. Standard addr es s a c ce ss ti mi ngs pr ov i de ne w dat a whe n
addresses are changed. While in sleep mode, output
data is latched and always available to the system.
I CC4 in the DC Characteristics table represents the
automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP,
the device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was
interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS ± 0.3 V, the device draws CMOS standby current (ICC4). If RESET# is
held at VIL but not within VSS ± 0.3 V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t READY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is
completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after
the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 15 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
Table 4. Device Bank Division
Device
Part Number
Am29DL163D
Bank 1
Bank 2
Megabits
Sector Sizes
Megabits
Sector Sizes
4 Mbit
Eight 8 Kbyte/4 Kword,
seven 64 Kbyte/32 Kword
12 Mbit
Twenty-four
64 Kbyte/32 Kword
DS42514
13
Bank 2
Bank 1
Am29DL163DB
Table 5. Sector Addresses for Bottom Boot Sector Devices
Sector
Sector Address
A19–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA0
00000000
8/4
000000h–001FFFh
00000h–00FFFh
SA1
00000001
8/4
002000h–003FFFh
01000h–01FFFh
SA2
00000010
8/4
004000h–005FFFh
02000h–02FFFh
SA3
00000011
8/4
006000h–007FFFh
03000h–03FFFh
SA4
00000100
8/4
008000h–009FFFh
04000h–04FFFh
SA5
00000101
8/4
00A000h–00BFFFh
05000h–05FFFh
SA6
00000110
8/4
00C000h–00DFFFh
06000h–06FFFh
SA7
00000111
8/4
00E000h–00FFFFh
07000h–07FFFh
SA8
00001XXX
64/32
010000h–01FFFFh
08000h–0FFFFh
SA9
00010XXX
64/32
020000h–02FFFFh
10000h–17FFFh
SA10
00011XXX
64/32
030000h–03FFFFh
18000h–1FFFFh
SA11
00100XXX
64/32
040000h–04FFFFh
20000h–27FFFh
SA12
00101XXX
64/32
050000h–05FFFFh
28000h–2FFFFh
SA13
00110XXX
64/32
060000h–06FFFFh
30000h–37FFFh
SA14
00111XXX
64/32
070000h–07FFFFh
38000h–3FFFFh
SA15
01000XXX
64/32
080000h–08FFFFh
40000h–47FFFh
SA16
01001XXX
64/32
090000h–09FFFFh
48000h–4FFFFh
SA17
01010XXX
64/32
0A0000h–0AFFFFh
50000h–57FFFh
SA18
01011XXX
64/32
0B0000h–0BFFFFh
58000h–5FFFFh
SA19
01100XXX
64/32
0C0000h–0CFFFFh
60000h–67FFFh
SA20
01101XXX
64/32
0D0000h–0DFFFFh
68000h–6FFFFh
SA21
01110XXX
64/32
0E0000h–0EFFFFh
70000h–77FFFh
SA22
01111XXX
64/32
0F0000h–0FFFFFh
78000h–7FFFFh
SA23
10000XXX
64/32
100000h–10FFFFh
80000h–87FFFh
SA24
10001XXX
64/32
110000h–11FFFFh
88000h–8FFFFh
SA25
10010XXX
64/32
120000h–12FFFFh
90000h–97FFFh
SA26
10011XXX
64/32
130000h–13FFFFh
98000h–9FFFFh
SA27
10100XXX
64/32
140000h–14FFFFh
A0000h–A7FFFh
SA28
10101XXX
64/32
150000h–15FFFFh
A8000h–AFFFFh
SA29
10110XXX
64/32
160000h–16FFFFh
B0000h–B7FFFh
SA30
10111XXX
64/32
170000h–17FFFFh
B8000h–BFFFFh
SA31
11000XXX
64/32
180000h–18FFFFh
C0000h–C7FFFh
SA32
11001XXX
64/32
190000h–19FFFFh
C8000h–CFFFFh
SA33
11010XXX
64/32
1A0000h–1AFFFFh
D0000h–D7FFFh
SA34
11011XXX
64/32
1B0000h–1BFFFFh
D8000h–DFFFFh
SA35
11100XXX
64/32
1C0000h–1CFFFFh
E0000h–E7FFFh
SA36
11101XXX
64/32
1D0000h–1DFFFFh
E8000h–EFFFFh
SA37
11110XXX
64/32
1E0000h–1EFFFFh
F0000h–F7FFFh
SA38
11111XXX
64/32
1F0000h–1FFFFFh
F8000h–FFFFFh
Note: The address range is A19:A-1 in byte mode (CIOf=VIL) or A19:A0 in word mode (CIOf=VIH). The bank address bits are A19 and A18 for
Am29DL163DB.
Table 6.
14
SecSi Sector Addresses for Bottom Boot Devices
Device
Sector Address
A19–A12
Sector
Size
(x8)
Address Range
(x16)
Address Range
Am29DL163DB
00000XXX
64/32
000000h–00FFFFh
00000h–07FFFh
DS42514
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be
programmed with its corresponding programming algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 12. This method
does not require V ID . Refer to the Autoselect Command Sequence section for more information.
Sector/Sector Block Protection and
Unprotection
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
7).
Table 7. Bottom Boot Sector/Sector Block
Addresses for Protection/Unprotection
Sector / Sector
Block
A19–A12
Sector / Sector Block Size
SA38
11111XXX
64 Kbytes
SA37–SA35
11110XXX,
11101XXX,
11100XXX
192 (3x64) Kbytes
SA34–SA31
110XXXXX
256 (4x64) Kbytes
SA30–SA27
101XXXXX
256 (4x64) Kbytes
SA26–SA23
100XXXXX
256 (4x64) Kbytes
SA22–SA19
011XXXXX
256 (4x64) Kbytes
Sector protection/unprotection requires VID on the RESET# pin only, and can be implemented either
in-system or via programming equipment. Figure 2
shows the algorithms and Figure 26 shows the timing
diagram. This method uses standard microprocessor
bus cycle timing. For sector unprotect, all unprotected
sectors must first be protected prior to the first sector
unprotect write cycle. Note that the sector unprotect
algorithm unprotects all sectors in parallel. All previously protected sectors must be individually
re-protected. To change data in protected sectors efficiently, the temporary sector un protect function is
available. See “Temporary Sector/Sector Block
Unprotect”.
The device is shipped with all sectors unprotected.
It is possible to determine whether a sector is protected or unprotected. See the Autoselect Mode
section for details.
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting certain boot sectors without
using VID. This function is one of two provided by the
WP#/ACC pin.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two
“outermost” 8 Kbyte boot sectors independently of
whether those sectors were protected or unprotected
using the method described in “Sector/Sector Block
Protection and Unprotection”. The two outermost 8
Kbyte boot sectors are the two sectors containing the
lowest addresses in a bottom-boot-configured device,
or the two sectors containing the highest addresses in
a top-boot-configured device.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8 Kbyte boot
sectors were last set to be protected or unprotected.
That is, sector protection or unprotection for these two
sectors depends on whether they were last protected
or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”.
SA18–SA15
010XXXXX
256 (4x64) Kbytes
SA14–SA11
001XXXXX
256 (4x64) Kbytes
SA10–SA8
00001XXX,
00010XXX,
00011XXX
192 (3x64) Kbytes
SA7
00000111
8 Kbytes
SA6
00000110
8 Kbytes
SA5
00000101
8 Kbytes
SA4
00000100
8 Kbytes
SA3
00000011
8 Kbytes
SA2
00000010
8 Kbytes
Temporary Sector/Sector Block Unprotect
SA1
00000001
8 Kbytes
SA0
00000000
8 Kbytes
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
7).
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors. Sector protection and unprotection can be implemented as follows.
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
DS42514
15
SET# pin to VID (8.5 V – 12.5 V). During this mode,
formerly protected sectors can be programmed or
erased by selecting the sector addresses. Once VID is
removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the
algorithm, and Figure 25 shows the timing diagrams,
for this feature.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
outermost boot sectors will remain protected).
2. All previously protected sectors are protected once
again.
Figure 1. Temporary Sector Unprotect Operation
16
DS42514
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
Temporary Sector
Unprotect Mode
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Yes
Yes
No
Yes
PLSCNT
= 1000?
Protect another
sector?
Device failed
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Protect
Algorithm
Sector Protect
complete
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Note: The term “sector” in the figure applies to both sectors and sector blocks.
Figure 2. In-System Sector/Sector Block Protect and Unprotect Algorithms
DS42514
17
SecSi (Secured Silicon) Sector Flash
Memory Region
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN). The SecSi Sector is 64 Kbytes in length, and
uses a SecSi Sector Indicator Bit to indicate whether
or not the SecSi Sector is locked when shipped from
the factory. This bit is permanently set at the factory
and cannot be changed, which prevents cloning of a
factory locked part. This ensures the security of the
ESN once the product is shipped to the field.
If the security feature is not required, the SecSi Sector
can be treated as an additional Flash memory space,
expanding the size of the available Flash array by 64
Kbytes. The SecSi Sector can be read, programmed,
and erased as often as required. Note that the accelerated programming (ACC) and unlock bypass functions
are not available when programming the SecSi Sector.
AMD offers the device with the SecSi Sector either
fac tor y lock ed or customer lock able. The fac tory-locked version is always protected when shipped
from the factory, and has the SecSi Sector Indicator
Bit permanently set to a “1.” The customer-lockable
version is shipped with the unprotected, allowing customers to utilize the that sector in any manner they
choose. The customer-lockable version has the SecSi
Sector Indicator Bit permanently set to a “0.” Thus, the
SecSi Sector Indicator Bit prevents customer-lockable
devices from being used to replace devices that are
factory locked.
The system accesses the SecSi Sector through a
command sequence (see “Enter SecSi Sector/Exit
SecSi Sector Command Sequence”). After the system
has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the
addresses normally occupied by the boot sectors. This
mode of operation continues until the system issues
the Exit SecSi Sector command sequence, or until
power is removed from the device. On power-up, or
following a hardware reset, the device reverts to sending commands to the boot sectors.
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
In a factory locked device, the SecSi Sector is protected when the device is shipped from the factory.
The SecSi Sector cannot be modified in any way. The
device is available preprogrammed with a random, secure ESN only
In devices that have an ESN, a Bottom Boot device
will have the 16-byte ESN in the lowest addressable
memory area at addresses 00000h–00007h in word
mode (or 000000h–00000Fh in byte mode). In the Top
Boot device the starting address of the ESN will be at
the bottom of the lowest 8 Kbyte boot sector at addresses F8000h–F8007h in word mode (or
1F0000h–1F000Fh in byte mode).
18
The SecSi Sector area can be protected using one of the
following procedures:
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This
allows in-system protection of the without raising
any device pin to a high voltage. Note that this
method is only applicable to the SecSi Sector.
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then use the alternate
method of sector protection described in the “Sector/Sector Block Protection and Unprotection”.
Once the SecSi Sector is locked and verified, the system mus t wr ite the Ex it Sec Si S ecto r Regi on
command sequence to return to reading and writing
the remainder of the array.
The SecSi Sector protection must be used with caution since, once protected, there is no procedure
available for unprotecting the SecSi Sector area and
none of the bits in the SecSi Sector memory space
can be modified in any way.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 12 for command definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V CC power-up
and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO.
The system must provide the proper signals to the
control pins to prevent unintentional writes when VCC
is greater than VLKO.
DS42514
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#f
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE#f = VIH or WE# = VIH. To initiate a write cycle,
CE#f and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE#f = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to reading array data on power-up.
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
Table 8.
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The system can read CFI information at the addresses given
in Tables 8–11. To terminate reading CFI data, the system must write the reset command. The CFI Query
mode is not accessible when the device is executing
an Embedded Program or embedded erase algorithm.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 8–11. The
system must write the reset command to return the device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the
World Wide Web at http://www.amd.com/products/nvd/overview/cfi.html. Alternatively, contact an
AMD representative for copies of these documents.
CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
DS42514
19
Table 9. System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 10.
Description
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
27h
4Eh
0015h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
001Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
20
Description
DS42514
Table 11. Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0031h
Minor version number, ASCII
45h
8Ah
0000h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Description
Silicon Revision Number (Bits 7-2)
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
94h
00XXh
(See Note)
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
0085h
4Eh
9Ch
0095h
4Fh
9Eh
000Xh
Simultaneous Operation
00 = Not Supported, X= Number of Sectors in Bank 2 (Uniform Bank)
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
Note:
The number of sectors in Bank 2 is device dependent.
DS42514
21
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 12 defines the valid register command sequences. Writing incorrect address and
data values or writing them in the improper sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#f, whichever happens later. All data is latched
on the rising edge of WE# or CE#f, whichever happens first. Refer to the AC Characteristics section for
timing diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-suspend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. After completing a programming operation
in the Erase Suspend mode, the system may once
again read array data with the same exception. See
the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Flash Read-Only Operations table provides the
read parameters, and Figure 14 shows the timing
diagram.
which the system was writing to reading array data. If
the program command sequence is written to a bank
that is in the Erase Suspend mode, writing the reset
co mmand re turn s th at ban k to the era se- su sp en d - r e ad m od e . O n c e p r o g r am m i n g b eg i n s ,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data. If a
bank entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns
that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to reading array data (or erase-suspend-read mode if that
bank was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 12 shows the address and data requirements.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively programming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the auto s el ec t c om m an d. Th e ba nk th en e nt er s th e
autoselect mode. The system may read at any address within the same bank any number of times
without initiating another autoselect command
sequence:
Reset Command
■ A read cycle at address (BA)XX00h (where BA is
the bank address) returns the manufacturer code.
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
■ A read cycle at address (BA)XX01h in word mode
(or (BA)XX02h in byte mode) returns the device
code.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the system was writing to reading array data. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
■ A read cycle to an address containing a sector address (SA) within the same bank, and the address
02h on A7–A0 in word mode (or the address 04h on
A6–A-1 in byte mode) returns 01h if the sector is
protected, or 00h if it is unprotected. (Refer to Tables 5–6 for valid sector addresses).
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
The system must write the reset command to return to
reading array data (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
22
DS42514
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi Sector command
sequence. The device continues to access the SecSi
Sector region until the system issues the four-cycle
Exit SecSi Sector command sequence. The Exit SecSi
Sector command sequence returns the device to normal operation. Table 12 shows the address and data
requirements for both command sequences. See also
“SecSi (Secured Silicon) Sector Flash Memory Region” for further information. Note that a hardware
reset (RESET#=V IL) will reset the device to reading
array data.
Byte/Word Program Command Sequence
The system may program the device by word or byte,
depending on the state of the CIOf pin. Programming
is a four-bus-cycle operation. The program command
sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or
timings. The device automatically provides internally
generated program pulses and verifies the programmed cell margin. Table 12 shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
that bank then returns to reading array data and addresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. Refer to the Write Operation Status section for information on these status
bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was success-
ful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a
“0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
That bank then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting in faster
total programming time. Table 12 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need
only contain the data 00h. The bank then returns to
the reading array data.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH any operation
other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Figure 3 illustrates the algorithm for the program operati on . Ref er t o t he Fl as h Er a se a nd P ro gr am
Operations table in the AC Characteristics section for
parameters, and Figure 18 for timing diagrams.
DS42514
23
mediately terminates the erase operation. If that
occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
START
Figure 4 illustrates the algorithm for the erase operation. Refer to the Flash Erase and Program
Operations tables in the AC Characteristics section for
par ameters , and Fi gure 20 sec tion fo r ti ming
diagrams.
Write Program
Command Sequence
Sector Erase Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then
followed by the address of the sector to be erased,
and the sector erase command. Table 12 shows the
address and data requirements for the sector erase
command sequence.
No
Yes
Increment Address
No
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
Last Address?
Yes
Programming
Completed
Note: See Table 12 for program command sequence.
Figure 3.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 12
shows the address and data requirements for the chip
erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. Refer to the Write Operation Status
section for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset im24
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than
50 µs, otherwise erasure may begin. Any sector erase
address and command following the exceeded
time-out may or may not be accepted. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector
Erase command is written. Any command other than
Se ct o r Er ase o r E ras e Sus pe n d d u ri ng t h e
time-out period resets that bank to reading array
data. The system must rewrite the command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing bank. The system can determine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank.
DS42514
Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Flash Erase and Program
Operations tables in the AC Characteristics section for
para meters , and Fig ure 2 0 sec tion for tim ing
diagrams.
Erase Suspend/Erase Resume
Commands
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend
command can be written after the chip has resumed
erasing.
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 50 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program
algorithm.
START
Write Erase
Command Sequence
(Notes 1, 2)
When the Erase Suspend command is written during
the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation.
However, when the Erase Suspend command is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for information on these status bits.
Data Poll to Erasing
Bank from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 12 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
DS42514
Figure 4. Erase Operation
25
Table 12. DS42514 Command Definitions
Read (Note 6)
Autoselect (Note 8)
Reset (Note 7)
Manufacturer ID
Device ID
Word
Byte
Word
Byte
SecSi Sector Factory
Protect (Note 9)
Word
Sector Protect Verify
(Note 10)
Word
Enter SecSi Sector Region
Exit SecSi Sector Region
Program
Unlock Bypass
Byte
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Bus Cycles (Notes 2–5)
Cycles
Command
Sequence
(Note 1)
Addr
Data
1
RA
RD
1
XXX
F0
4
4
4
4
3
4
4
3
First
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
Second
AA
AA
AA
AA
AA
AA
AA
AA
Addr
Data
2AA
55
555
2AA
55
555
2AA
55
555
2AA
55
555
2AA
55
555
2AA
55
555
2AA
55
555
2AA
55
555
Unlock Bypass Program (Note 11)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 12)
2
BA
90
XXX
00
Chip Erase
Sector Erase
Word
Byte
Word
Byte
6
6
555
AAA
555
AAA
AA
AA
Erase Suspend (Note 13)
1
BA
B0
Erase Resume (Note 14)
1
BA
30
CFI Query (Note 15)
Word
Byte
1
55
AA
2AA
55
555
2AA
55
555
Third
Addr
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
Fourth
Fifth
Data
Addr
Data
90
(BA)X00
01
90
90
90
Addr
Sixth
Data
Addr
Data
(BA)X01
(BA)X02
(BA)X03
(BA)X06
(SA)X02
(SA)X04
81/01
00/01
88
90
XXX
00
A0
PA
PD
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
98
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE#f pulse, whichever happens
later.
Notes:
1. See Tables1 through 3 for description of bus operations.
2. All values are in hexadecimal.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE#f pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A19–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased.
8.
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or SecSi Sector factory protect
information. Data bits DQ15–DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
The data is 80h for factory locked and 00h for not factory locked.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
9.
10. The data is 00h for an unprotected sector/sector block and 01h
for a protected sector/sector block.
5.
Unless otherwise noted, address bits A19–A11 are don’t cares.
6.
No unlock or command cycles required when bank is in read
mode.
7.
The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information).
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
14. The Erase Resume command is valid only during the Erase
26
DS42514
WRITE OPERATION STATUS
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5,
DQ6, and DQ7. Table 13 and the following subsections describe the function of these bits. DQ7 and DQ6
each offer a method for determining whether a program or erase operation is complete or in progress.
The device also provides a hardware-based output
signal, RY/BY#, to determine whether an Embedded
Program or Erase operation is in progress or has been
completed.
pleted the program or erase operation and DQ7 has
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ0–DQ7 will appear on successive read cycles.
Table 13 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm. Figure 22
in the AC Characteristics section shows the Data#
Polling timing diagram.
DQ7: Data# Polling
START
The Data# Polling bit, DQ7, indicates to the host system whethe r an Embed ded Pr ogr am or Er as e
algorithm is in progress or completed, or whether a
bank is in Erase Suspend. Data# Polling is valid after
the rising edge of the final WE# pulse in the command
sequence.
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then that bank returns to reading
array data.
DQ7 = Data?
No
No
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has com-
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then
the bank returns to reading array data. If not all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores
the selected sectors that are protected. However, if the
system reads DQ7 at an address within a protected
sector, the status may not be valid.
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
DS42514
Figure 5. Data# Polling Algorithm
27
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is reading array data, the standby
mode, or one of the banks is in the erase-suspend-read mode.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 13 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm. Figure 23 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 24 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
START
Table 13 shows the outputs for RY/BY#.
Read DQ7–DQ0
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
Read DQ7–DQ0
Toggle Bit
= Toggle?
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE#f to control the read cycles. When the operation is
complete, DQ6 stops toggling.
Yes
No
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data#
Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
No
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 6. Toggle Bit Algorithm
28
DS42514
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE#f to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 13 to compare outputs for DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 23 shows the toggle bit timing diagram. Figure
24 shows the differences between DQ2 and DQ6 in
graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cy-
cles, determining the status as described in the
previous paragraph. Alternatively, it may choose to
perform other system tasks. In this case, the system
must start at the beginning of the algorithm when it returns to determine the status of the operation (top of
Figure 6).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time
has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1,” indicating
that the program or erase cycle was not successfully
completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to reading array data (or
to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase command. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 13 shows the status of DQ3 relative to the other
status bits.
DS42514
29
Table 13. Write Operation Status
Status
Standard
Mode
Erase
Suspend
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend- Suspended Sector
Read
Non-Erase
Suspended Sector
Erase-Suspend-Program
DQ7
(Note 2)
DQ7#
0
Toggle
Toggle
DQ5
(Note 1)
0
0
1
No toggle
Data
DQ7#
N/A
1
DQ2
(Note 2)
No toggle
Toggle
0
N/A
Toggle
1
Data
Data
Data
Data
1
Toggle
0
N/A
N/A
0
DQ6
DQ3
RY/BY#
0
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
30
DS42514
ABSOLUTE MAXIMUM RATINGS
OPERATING RANGES
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –55°C to +125°C
Industrial (I) Devices
Ambient Temperature
with Power Applied . . . . . . . . . . . . . . –25°C to +85°C
Voltage with Respect to Ground
Ambient Temperature (TA) . . . . . . . . .–25°C to +85°C
VCCf/VCCs Supply Voltage
VCCf/VCCs for standard voltage range . . 2.7 V to 3.3 V
VCCf/VCCs (Note 1) . . . . . . . . . . . .–0.3 V to +4.0 V
OE# and RESET#
(Note 2) . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
WP#/ACC . . . . . . . . . . . . . . . . . .–0.5 V to +10.5 V
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 7. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 8.
2. Minimum DC input voltage on pins OE#, RESET#, and
WP#/ACC is –0.5 V. During voltage transitions, OE#,
WP#/ACC, and RESET# may overshoot V SS to –2.0 V
for periods of up to 20 ns. See Figure 7. Maximum DC
input voltage on pin RESET# is +12.5 V which may
overshoot to +14.0 V for periods up to 20 ns. Maximum
DC input voltage on WP#/ACC is +9.5 V which may
overshoot to +12.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
20 ns
20 ns
+0.8 V
20 ns
VCC
+2.0 V
VCC
+0.5 V
–0.5 V
–2.0 V
2.0 V
20 ns
20 ns
Figure 7. Maximum Negative
Overshoot Waveform
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
DS42514
31
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
RESET# Input Load Current
VCC = VCC max; RESET# = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ILIA
ACC Input Leakage Current
VCC = VCC max,
WP#/ACC = VACC max
ICC1f
32
Parameter Description
Flash VCC Active Read Current
(Notes 1, 2)
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
35
µA
CE#f = VIL, OE# = VIH,
Byte Mode
5 MHz
10
16
1 MHz
2
4
CE#f = VIL, OE# = VIH,
Word Mode
5 MHz
10
16
1 MHz
2
4
mA
ICC2f
Flash VCC Active Write Current
(Notes 2, 3)
CE#f = VIL, OE# = VIH, WE# = VIL
15
30
mA
ICC3f
Flash VCC Standby Current (Note 2)
VCCf = VCC max, CE#f, RESET#,
WP#/ACC = VCCf ± 0.3 V
0.2
5
µA
ICC4f
Flash VCC Reset Current (Note 2)
VCCf = VCC max, RESET# = VSS ±
0.3 V, WP#/ACC = VCCf ± 0.3 V
0.2
5
µA
ICC5f
Flash VCC Current Automatic Sleep
Mode (Notes 2, 4)
VCCf = VCC max, VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
Flash VCC Active
Read-While-Program Current (Notes CE#f = VIL, OE# = VIH
1, 2)
Byte
21
45
ICC6f
Word
21
45
ICC7f
Flash VCC Active Read-While-Erase
Current (Notes 1, 2)
CE#f = VIL, OE# = VIH
Byte
21
45
Word
21
45
ICC8f
Flash VCC Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE#f = VIL, OE#f = VIH
17
35
mA
IACC
ACC Accelerated Program Current,
Word or Byte
CE#f = VIL, OE# = VIH
ACC pin
5
10
mA
VCC pin
15
30
mA
ICC1s
SRAM VCC Active Current
VCCs = VCC max,
CE1#s = VIL,
CE2s = VIH
10 MHz
45
mA
ICC2s
SRAM VCC Active Current
CE1#s = 0.2 V,
CE2s = VCCs – 0.2V
10 MHz
45
1 MHz
5
ICC3s
SRAM VCC Standby Current
1) CE1#s = VIH, CE2s = VIH
2) CE2s = VIL
0.3
mA
ICC4s
SRAM VCC Standby Current
CE1#s ≥ VCCs – 0.2V, CE2s ≥
VCCs – 0.2V
12
µA
ICC5s
SRAM VCC Standby Current
CE2s ≤ 0.2V
12
µA
mA
mA
mA
VIL
Input Low Voltage
–0.2
0.8
V
VIH
Input High Voltage
2.4
VCC + 0.2
V
DS42514
DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
VHH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
VID
Voltage for Sector Protection,
Autoselect and Temporary Sector
Unprotect
8.5
12.5
V
VOL
Output Low Voltage
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
IOL = 4.0 mA, VCCf = VCCs =
VCC min
IOH = –2.0 mA, VCCf = VCCs =
VCC min
0.85 x
VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Flash Low VCC Lock-Out Voltage
(Note 5)
V
2.3
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
–1.0
1.0
µA
ILO
Output Leakage Current
CE1#s = VIH, CE2s = VIL or OE# =
VIH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
ICC
Operating Power Supply Current
IIO = 0 mA, CE1#s = VIL, CE2s =
WE# = VIH, VIN = VIH or VIL
3
mA
ICC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
IIO = 0 mA, CE1#s ≤ 0.2 V,
CE2 ≥ VCC – 0.2 V, VIN ≤ 0.2 V or
VIN ≥ VCC – 0.2 V
5
mA
ICC2s
Average Operating Current
Cycle time = Min., IIO = 0 mA,
100% duty, CE1#s = VIL, CE2s =
VIH, VIN = VIL = or VIH
45
mA
VOL
Output Low Voltage
IOL = 2.1 mA
0.4
V
VOH
Output High Voltage
IOH = –1.0 mA
ISB
Standby Current (TTL)
CE1#s = VIH, CE2 = VIL, Other
inputs = VIH or VIL
0.3
mA
Standby Current (CMOS)
CE1#s ≥ VCC – 0.2 V, CE2 ≥ VCC –
0.2 V (CE1#s controlled) or CE2 ≤
0.2 V (CE2s controlled), CIOs =
VSS or VCC, Other input = 0 ~ VCC
12
µA
ISB1
DS42514
2.4
V
33
DC CHARACTERISTICS
Zero-Power Flash
25
Supply Current in mA
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.3 V
10
2.7 V
Supply Current in mA
8
6
4
2
0
1
2
3
Frequency in MHz
Note: T = 25 °C
Figure 10.
34
Typical ICC1 vs. Frequency
DS42514
4
5
TEST CONDITIONS
Table 14. Test Specifications
3.3 V
2.7 kΩ
Device
Under
Test
CL
6.2 kΩ
Test Condition
85 ns
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement reference
levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 11.
Unit
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
KS000010-PAL
3.0 V
Input
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 12. Input Waveforms and Measurement Levels
DS42514
35
AC CHARACTERISTICS
SRAM CE#s Timing
Parameter
Speed
Test Setup
JEDEC
Std
Description
—
tCCR
CE#s Recover Time
Unit
85
—
Min
E#f
tCCR
tCCR
tCCR
tCCR
E1#s
E2s
Figure 13.
36
Timing Diagram for Alternating Between SRAM to Flash
DS42514
0
ns
AC CHARACTERISTICS
Flash Read-Only Operations
Parameter
85 ns Speed
Test Setup
JEDEC
Std
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
Unit
Min
Max
85
ns
CE#f, OE# = VIL
85
ns
OE# = VIL
85
ns
Output Enable to Output Delay
35
ns
tDF
Chip Enable to Output High Z (Note 1)
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE#f or OE#,
Whichever Occurs First
tOEH
Read
Output Enable Hold Time
Toggle and
(Note 1)
Data# Polling
0
ns
0
ns
10
ns
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 14 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#f
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 14.
Read Operation Timings
DS42514
37
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
Description
JEDEC
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#f, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#f, OE#
RESET#
tRP
Figure 15. Reset Timings
38
85 ns
Std
DS42514
AC CHARACTERISTICS
Flash Word/Byte Configuration (CIOf)
Parameter
JEDEC
Std
85 ns Speed
Description
Min
Typ
Max
Unit
tELFL/tELFH
CE#f to CIOf Switching Low or High
5
ns
tFLQZ
CIOf Switching Low to Output HIGH Z
30
ns
tFHQV
CIOf Switching High to Output Active
85
ns
CE#f
OE#
CIOf
CIOf
Switching
from word
to byte
mode
tELFL
Data Output
(DQ0–DQ14)
DQ0–DQ14
Address
Input
DQ15
Output
DQ15/A-1
Data Output
(DQ0–DQ7)
tFLQZ
tELFH
CIOf
CIOf
Switching
from byte
to word
mode
Data Output
(DQ0–DQ7)
DQ0–DQ14
Address
Input
DQ15/A-1
Data Output
(DQ0–DQ14)
DQ15
Output
tFHQV
Figure 16.
CIOf Timings for Read Operations
CE#f
The falling edge of the last WE# signal
WE#
CIOf
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 17.
CIOf Timings for Write Operations
DS42514
39
AC CHARACTERISTICS
Flash Erase and Program Operations
Parameter
85 ns Speed
Unit
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
85
ns
tAVWL
tAS
Address Setup Time (WE# to Address)
0
ns
tASO
Address Setup Time to OE# or CE#f low during toggle bit
polling
15
ns
tAH
Address Hold Time (WE# to Address)
45
ns
tAHT
Address Hold Time From CE#f or OE# high during toggle bit
polling
0
ns
tDVWH
tDS
Data Setup Time
35
ns
tWHDX
tDH
Data Hold Time
0
ns
Read
0
ns
tOEH
OE# Hold Time
Toggle and Data# Polling
10
ns
tOEPH
Output Enable High during toggle bit polling
20
tGHEL
tGHEL
Read Recovery Time Before Write (OE# High to CE#f Low)
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
0
ns
tWLEL
tWS
WE# Setup Time (CE#f to WE#)
0
ns
tELWL
tCS
CE#f Setup Time (WE# to CE#f)
0
ns
tEHWH
tWH
WE# Hold Time (CE#f to WE#)
0
ns
tWHEH
tCH
CE#f Hold Time (CE#f to WE#)
0
ns
tWLWH
tWP
Write Pulse Width
35
ns
tELEH
tCP
CE#f Pulse Width
35
ns
tWHDL
tWPH
Write Pulse Width High
30
ns
tSR/W
Latency Between Read and Write Operations
0
ns
tWLAX
Min
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
20
Byte
5
Word
7
Max
20
ns
µs
4
µs
0.7
sec
tVCS
VCCf Setup Time (Note 1)
50
µs
tRB
Write Recovery Time from RY/BY#
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
40
Typ
DS42514
90
ns
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#f
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
VCCf
tVCS
otes:
. PA = program address, PD = program data, DOUT is the true data at the program address.
. Illustration shows device in word mode.
Figure 18.
Program Operation Timings
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
Figure 19.
tVHH
Accelerated Program Timing Diagram
DS42514
41
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#f
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCCf
otes:
. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
. These waveforms are for the word mode.
Figure 20.
42
Chip/Sector Erase Operation Timings
DS42514
AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#f
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
CE#f Controlled Write Cycles
Figure 21. Back-to-back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#f
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 22.
Data# Polling Timings (During Embedded Algorithms)
DS42514
43
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#f
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle
Figure 23.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f to
toggle DQ2 and DQ6.
Figure 24.
44
DQ2 vs. DQ6
DS42514
AC CHARACTERISTICS
Temporary Sector/Sector Block Unprotect
Parameter
JEDEC
85 ns Speed
Unit
Min
500
ns
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary
Sector/Sector Block Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector/Sector Block Unprotect
Min
4
µs
Std
Description
tVIDR
VID Rise and Fall Time (See Note)
tVHH
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#f
WE#
tRRB
tRSP
RY/BY#
Figure 25. Temporary Sector/Sector Block Unprotect Timing Diagram
DS42514
45
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector/Sector Block Protect or Unprotect
Data
60h
60h
Verify
40h
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#f
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 26. Sector/Sector Block Protect and Unprotect Timing Diagram
46
DS42514
Valid*
Status
AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Parameter
85 ns Speed
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
85
ns
tAVWL
tAS
Address Setup Time (WE# to Address)
0
ns
tASO
Address Setup Time to CE#f Low During Toggle
Bit Polling
15
ns
tAH
Address Hold Time
45
ns
tAHT
Address Hold time from CE#f or OE# High During
Toggle Bit Polling
0
ns
tDVEH
tDS
Data Setup Time
35
ns
tEHDX
tDH
Data Hold Time
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
0
ns
tWLEL
tWS
WE# Setup Time
0
ns
tEHWH
tWH
WE# Hold Time
0
ns
tELEH
tCP
CE#f Pulse Width
35
ns
tEHEL
tCPH
CE#f Pulse Width High
35
ns
tWHWH1
tWHWH1
Programming Operation
(Note 2)
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
tELAX
Min
Typ
Byte
5
Word
7
Max
Unit
µs
4
µs
0.7
sec
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
DS42514
47
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#f
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
48
DS42514
AC CHARACTERISTICS
SRAM Read Cycle
Parameter
Symbol
Description
Min
Max
tRC
Read Cycle Time
tAA
Address Access Time
85
ns
tCO1, tCO2
Chip Enable to Output
85
ns
tOE
Output Enable Access Time
45
ns
tBA
LB#s, UB#s to Valid Output
85
ns
tLZ1, tLZ2
85
Unit
ns
Chip Enable (CE1#s Low and CE2s High) to Low-Z Output
10
ns
tBLZ
UB#, LB# Enable to Low-Z Output
10
ns
tOLZ
Output Enable to Low-Z Output
5
ns
Chip disable to High-Z Output
0
25
ns
tBHZ
UB#s, LB#s Disable to High-Z Output
0
25
ns
tOHZ
Output Disable to High-Z Output
0
25
ns
tOH
Output Data Hold from Address Change
15
tHZ1, tHZ2
ns
tRC
ddress
tOH
ata Out
tAA
Data Valid
Previous Data Valid
Note: CE1#s = OE# = VIL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL
Figure 28. SRAM Read Cycle—Address Controlled
DS42514
49
AC CHARACTERISTICS
tRC
Address
tAA
tCO1
CS#1
CS2
tCO2
tHZ
tBA
UB#, LB#
tBHZ
tOE
OE#
Data Out
tOH
High-Z
tOLZ
tBLZ
tLZ
Figure 29.
tOHZ
Data Valid
SRAM Read Cycle
Notes:
1. WE# = VIH, if CIOs is low, ignore UB#s/LB#s timing.
2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device
interconnection.
50
DS42514
AC CHARACTERISTICS
SRAM Write Cycle
Parameter
Symbol
Description
Min
Max
Unit
tWC
Write Cycle Time
85
ns
tCw
Chip Enable to End of Write
70
ns
tAS
Address Setup Time
0
ns
tAW
Address Valid to End of Write
70
ns
tBW
UB#s, LB#s to End of Write
70
ns
tWP
Write Pulse Time
60
ns
tWR
Write Recovery Time
0
ns
tWHZ
Write to Output High-Z
0
tDW
Data to Write Time Overlap
35
ns
tDH
Data Hold from Write Time
0
ns
tOW
End Write to Output Low-Z
5
ns
25
ns
tWC
Address
tCW
(See Note 1)
CS1#s
tWR (See Note 2)
tAW
CS2s
tCW
(See Note 1)
tBW
UB#s, LB#s
WE#
Data In
tWP
(See Note 4)
tAS
(See Note 3)
tDW
High-Z
High-Z
Data Valid
tBW
Data Out
tDH
tOW
Data Undefined
Notes:
1. WE# controlled, if CIOs is low, ignore UB#s and LB#s timing.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 30. SRAM Write Cycle—WE# Control
DS42514
51
AC CHARACTERISTICS
tWC
Address
tAS (See Note 2 ) tCW
(See Note 3)
tWR (See Note 4)
CE1#s
tAW
CE2s
tBW
UB#s, LB#s
tWP
(See Note 5)
WE#
tDW
Data Valid
Data In
Data Out
tDH
High-Z
High-Z
Notes:
1. CE1#s controlled, if CIOs is low, ignore UB#s and LB#s timing.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 31. SRAM Write Cycle—CE1#s Control
52
DS42514
AC CHARACTERISTICS
tWC
Address
tCW
(See Note 2)
CE1#s
tWR (See Note 3)
tAW
tCW (See Note 2)
CE2s
UB#s, LB#s
tBW
tAS
(See Note 4)
WE#
tWP
(See Note 5)
tDW
Data In
Data Out
tDH
Data Valid
High-Z
High-Z
Notes:
1. UB#s and LB#s controlled, CIOs must be high.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 32. SRAM Write Cycle—UB#s and LB#s Control
DS42514
53
FLASH ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Chip Erase Time
27
Excludes 00h programming
prior to erasure (Note 4)
Byte Program Time
5
150
µs
Word Program Time
7
210
µs
Accelerated Byte/Word Program Time
4
120
µs
Byte Mode
9
27
Word Mode
6
18
Chip Program Time
(Note 3)
sec
Excludes system level
overhead (Note 5)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
12 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
FLASH LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including OE# and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Parameter
Symbol
CIN
Description
Input Capacitance
Test Setup
Typ
Max
Unit
VIN = 0
11
14
pF
VOUT = 0
12
16
pF
COUT
Output Capacitance
CIN2
Control Pin Capacitance
VIN = 0
14
16
pF
CIN3
WP#/ACC Pin Capacitance
VIN = 0
17
20
pF
Note: 7.Test conditions TA = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
54
DS42514
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
SRAM DATA RETENTION CHARACTERISTICS
Parameter
Symbol
Parameter Description
VDR
VCC for Data Retention
CS1#s ≥ VCC – 0.2 V (See Note)
VDH
Data Retention Current
VCC = 1.5 V, CE1#s ≥ VCC – 0.2 V
(See Note)
tSDR
Data Retention Set-Up Time
tRDR
Recovery Time
Test Setup
Min
See data retention waveforms
Typ
1.5
0.5
Max
Unit
3.3
V
5
µA
0
ns
tRC
ns
Note: CE1#s ≥ VCC – 0.2 V, CE2s ≥ VCC – 0.2 V (CE1#s controlled) or CE2s ≤ 0.2 V (CE2s controlled), CIOs = VSS or VCC.
VCC
Data Retention Mode
tSDR
tRDR
2.7V
2.2V
VDR
CE1#s ≥ VCC - 0.2 V
CE1#s
GND
Figure 33. CE1#s Controlled Data Retention Mode
Data Retention Mode
VCC
2.7 V
CE2s
tSDR
tRDR
VDR
CE2s £ 0.2 V
0.4 V
GND
Figure 34.
CE2s Controlled Data Retention Mode
DS42514
55
PHYSICAL DIMENSIONS
FLA069—69-Ball Fine-Pitch Grid Array 8 x 11 mm
11.00 BSC
A
0.15 C
(2x)
DATUM B
8.00 BSC
B
1.40 (max)
Pin A1
Corner Index Mark
DATUM A
0.15 C
(2x)
0.97
1.07
0.20 C
C
0.20 (min)
7.20 BSC
0.80
0.40
10
9
8
7
7.20 BSC
6
0.40
5
4
0.80
3
2
1
K
J H G
F
E D C
B
A
0.25 (69x)
0.35
0.15 M C A B
0.08 M C
56
DS42514
0.08 C
REVISION SUMMARY
Revision B+1 (March 7, 2001)
Revision A (July 10, 2000)
Initial release as Preliminary Draft.
Sector/Sector Block Protection/Unprotection
Revision B (December 13, 2000)
Global
Deleted Preliminary status from document. Added
table of contents.
Command Definitions
Table 12, Command Definitions: The SecSi Sector Indicator Bit values have changed from 80h and 00h to
81h and 01h, respectively.
Added to second paragraph: “Note that the sector unprotect algorithm unprotects all sectors in parallel. All
previously protected sectors must be individually
re-protected. To change data in protected sectors efficiently, the temporary sector unprotect function is
available. See “Temporary Sector/Sector Block
Unprotect”.”
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
Added to end of first paragraph: “Note that the accelerated programming (ACC) and unlock bypass functions
are not available when programming the SecSi Sector.”
AC Characteristics—Alternate CE#f Controlled
Erase and Program Operations
t WHWH1 Programming Operation: Corrected typical
byte value of 9 µs to 5 µs and the typical word value of
11 µs to 7 µs.
t WHWH1 Accelerated Programming Operation: Corrected typical value of 7 µs to 4 µs.
Common Flash Memory Interface (CFI)
Added to second paragraph: “The CFI Query mode is
not accessible when the device is executing an Embedded Program or embedded erase algorithm.”
Revision B+2 (March 15, 2001)
Added “Am29DL163D Bottom Boot” to the product description on the top portion of the first page.
Trademarks
Copyright © 2001 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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