Panasonic DSC7003 Silicon npn epitaxial planar type for low frequency output amplification Datasheet

This product complies with the RoHS Directive (EU 2002/95/EC).
DSC7003
Silicon NPN epitaxial planar type
For low frequency output amplification
Complementary to DSA7003
DSC8003 in MiniP3 type package
 Features
 Package
 Low collector-emitter saturation voltage VCE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Code
MiniP3-F2-B
Package dimension clicks here.→
Click!
 Packaging
DSC7003×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
°C
Tstg
–55 to +150
°C
Storage temperature
 Pin Name
1. Base
2. Collector
3. Emitter
 Marking Symbol: 5A
cm2
Note) Printed circuit board: Copper foil area of 1
or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for PC is 0.5 W
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 mA, IE = 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 mA, IC = 0
5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
hFE1
Forward current transfer ratio *1
*2
hFE2
0.1
VCE = 10 V, IC = 500 mA
120
VCE = 5 V, IC = 1 A
50
340
mA

Collector-emitter saturation voltage *1
VCE(sat)
IC = 500 mA, IB = 50 mA
0.15
0.4
V
Base-emitter saturation voltage *1
VBE(sat)
IC = 500 mA, IB = 50 mA
0.9
1.2
V
fT
VCE = 10 V, IC = 50 mA
170
VCB = 10 V, IE = 0, f = 1 MHz
10
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
MHz
20
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
R
S
0
Rank
R
S
No-rank
hFE1
120 to 240
170 to 340
120 to 340
Marking Symbol
5AR
5AS
5A
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2012
Ver. DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC7003
DSC7003_PC-Ta
DSC7003_IC-VCE
PC  Ta
IB = 8 mA
1 000
Collector current IC (mA)
1 000
750
500
250
6 mA
800
5 mA
4 mA
600
3 mA
400
2 mA
200
0
40
80
120
160
0
200
Ambient temperature Ta (°C)
1 mA
0
2
4
VCE = 10 V
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
1
0.1
25°C
25°C
Ta = 85°C
−30°C
800
600
400
10
100
0
0
0.2
0.4
0.6
fT  IC
Transition frequency fT (MHz)
250
VCE = 10 V
Ta = 25°C
150
100
50
10
102
0.8
1.0
Base-emitter voltage VBE (V)
DSC7003_fT-IC
1
100
50
0
1
103
Collector current IC (mA)
Ver. DED
10
102
103
Collector current IC (mA)
Cob  VCB
200
Collector current IC (mA)
200
−30°C
DSC7003_Cob-VCB
−30°C
1
150
12
1 200
1 000
0.01
0.1
10
25°C
IC  VBE
IC / IB = 10
Ta = 85°C
8
200
DSC7003_IC-VBE
VCE(sat)  IC
10
6
Ta = 85°C
250
Collector-emitter voltage VCE (V)
DSC7003_VCEsat-IC
2
7 mA
Forward current transfer ratio hFE
300
Ta = 25°C
0
hFE  IC
1 200
1.2
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Collector power dissipation PC (mW)
1 250
0
DSC7003_hFE-IC
IC  VCE
IE = 0
f = 1 MHz
Ta = 25°C
20
15
10
5
0
1
10
100
Collector-base voltage VCB (V)
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