DSS3540M 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2540M) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free, "Green" Device (Note 2) DFN1006-3 • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0009 grams (Approximate) C B B C E E Bottom View Top View Device Schematic Device Symbol Ordering Information (Note 3) Product DSS3540M-7 DSS3540M-7B Notes: Marking TD TD Reel size (inches) 7 7 Tape width (mm) 8mm 8mm Quantity per reel 3,000 10,000 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DSS3540M-7 DSS3540M-7B TD TD Top View Dot Denotes Collector Side Top View Bar Denotes Base and Emitter Side DSS3540M Document number: DS31821 Rev. 2 - 2 1 of 5 www.diodes.com TD = Product Type Marking Code January 2011 © Diodes Incorporated DSS3540M Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value -40 -40 -6 -500 -1 -100 Unit V V V mA A mA Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 RθJA(t) = r(t) * RθJA RθJA = 500°C/W D = 0.1 P(pk) D = 0.05 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 1,000 100 1,000 10,000 0.30 Single Pulse 0.25 RθJA(t) = r(t) * RθJA RθJA = 500°C/W 100 PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) t1 TJ - TA = P * RθJA(t) 10 1 0.20 0.15 0.10 0.05 0.1 1E-06 0 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation DSS3540M Document number: DS31821 Rev. 2 - 2 2 of 5 www.diodes.com RθJA = 500°C/W 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4) January 2011 © Diodes Incorporated DSS3540M Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO -40 -40 -6 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Emitter Cutoff Current ON CHARACTERISTICS (Note 5) IEBO ⎯ ⎯ ⎯ ⎯ ⎯ -100 -50 -100 V V V nA μA nA DC Current Gain hFE 200 150 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -50 -130 -200 -350 mV 700 -1.2 -1.1 mΩ V V VCE = -2V, IC = -10mA VCE = -2V, IC = -100mA VCE = -2V, IC = -500mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5mA IC = -200mA, IB = -10mA IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE = -2V, IC = -100mA ⎯ ⎯ 10 ⎯ pF MHz VCB = -10V, f = 1.0MHz VCE = -5V, IC = -100mA, f = 100MHz Collector-Emitter Saturation Voltage VCE(sat) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product RCE(sat) VBE(sat) VBE(on) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Cobo fT ⎯ 100 IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -30V, IE = 0 VCB = -30V, IE = 0, TA = 150°C VEB = -5V, IC = 0 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 1.0 800 0.9 700 0.8 T A = 150°C 0.7 IB = -5mA 0.6 IB = -4mA 0.5 IB = -3mA 0.4 IB = -2mA 0.3 0.2 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) Notes: Test Condition 500 T A = 125°C TA = 85°C 400 300 TA = 25°C 200 IB = -1mA TA = -55°C 100 0.1 0 600 0 0 0.1 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DSS3540M Document number: DS31821 Rev. 2 - 2 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 3 of 5 www.diodes.com January 2011 © Diodes Incorporated DSS3540M -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 0.1 T A = 150°C TA = 125°C T A = 85°C TA = 25°C T A = -55°C 0.01 0.1 1.2 IC/IB = 20 1.0 0.8 TA = -55°C 0.6 TA = 25°C T A = 85°C 0.4 TA = 125°C T A = 150°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 IC/IB = 20 VCE = -2V 1.0 -RCE(SAT), COLLECTOR-EMITTER SATURATION RESISTANCE (Ω) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 0.8 T A = -55°C 0.6 TA = 25°C 0.4 T A = 85°C 0.2 T A = 150°C TA = 125°C 100 10 TA = -55°C TA = 25°C 1 T A = 150°C TA = 85°C T A = 125°C 0 0.1 0.1 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Collector-Emitter Saturation Resistance vs. Collector Current 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current Package Outline Dimensions A A1 D b1 E e b2 L2 DSS3540M Document number: DS31821 Rev. 2 - 2 L3 DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 4 of 5 www.diodes.com January 2011 © Diodes Incorporated DSS3540M Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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