Spec. No. : C351B3 Issued Date : 2003.08.20 Revised Date : Page No. : 1/4 CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC114EB3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA114EB3 Equivalent Circuit DTC114EB3 R1=10kΩ , R2=10 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature DTC114EB3 Symbol VCC VI IO IO(max.) Pd Tj Tstg Limits 50 -10~+40 50 100 300 150 -55~+150 Unit V V mA mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C351B3 Issued Date : 2003.08.20 Revised Date : Page No. : 2/4 Electrical Characteristics (Ta=25°C) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. 3 30 7 0.8 - Typ. 10 1 250 Max. 0.5 0.3 0.88 0.5 13 1.2 - Unit V V V mA µA kΩ MHz Test Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device DTC114EB3 CYStek Product Specification Spec. No. : C351B3 Issued Date : 2003.08.20 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Output Current Output Voltage vs Output Current 1000 Output Voltage---V O(on)(mV) 1000 Current Gain---GI Vo=5V 100 Io / Ii=20 100 10 10 1 10 Output Current ---Io(mA) 1 100 10 100 Output Current ---Io(mA) Output Current vs Input Voltage (OFF characteristics) Input Voltage vs Output Current (ON characteristics) 100 10 Output Current --- Io(mA) Input Voltage --- V I(on)(V) Vo=0.3V Vcc=5V 10 1 0.1 1 0.1 1 10 Output Current --- Io(mA) 100 0.1 1 Input Voltage --- VI(off)(V) 10 Power Derating Curve Power Dissipation---P D(mW) 350 300 250 200 150 100 50 0 0 DTC114EB3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification Spec. No. : C351B3 Issued Date : 2003.08.20 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-92SP Dimension E Marking : F 3 2 A D N4401 DTC114E 1 G C B 3-Lead TO-92SP Plastic Package CYStek Package Code: B3 Style: Pin 1.GND 2.OUT 3.IN *: Typical Inches DIM Min. 0.1450 0.1063 0.5000 - A B C D Max. 0.1650 0.1300 *0.1000 Millimeters Min. Max. 3.70 4.20 2.70 3.30 12.7 *2.54 DIM E F G Inches Min. 0.0160 0.0800 Max. 0.0240 *0.0150 0.1050 Millimeters Min. Max. 0.41 0.61 *0.38 2.03 2.67 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC114EB3 CYStek Product Specification