UNISONIC TECHNOLOGIES CO., DTA143E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BULT-IN RESISTORS) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input They also have the advantage of almost completely eliminating parasitic effects. * Only the on / off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT *Pb-free plating product number:DTA143EL IN AE3 R2 PIN CONFIGURATION PIN NO. PIN NAME 1 GND 2 OUT 3 IN GND (+) IN TO-92 MARKING OUT R1 1 OUT GND (+) ORDERING INFORMATION Order Number Normal Lead free DTA143E-T92-B DTA143EL-T92-B DTA143E-T92-K DTA143EL-T92-K www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Package Packing TO-92 TO-92 Tape Box Bulk 1 Ver.A QW-R201-080.A DTA143E PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCC VIN Io IC(max) PD TJ TSTG RATINGS -50 -30~+10 -100 -100 300 150 -40 ~ +150 UNIT V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER SYMBOL VI(off) Input Voltage VI(ON) Output Voltage VO(ON) Input Current II Output Current IO(off) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT *Transition frequency of the device TEST CONDITIONS VCC= -5V, IO=-100μA VO= -0.3V, IO= -20mA IO/II= -10mA / -0.5 mA VI= -5V VCC= -50V , VI=0V VO= -5V, IO= -10mA VCE= -10 V, IE= 5mA, f=100MHz * UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX -0.5 UNIT -0.1 -0.3 -1.8 -0.5 V mA μA 4.7 1 250 6.11 1.2 kΩ -3 20 3.29 0.8 V MHz 2 Ver.A QW-R201-080.A DTA143E PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS ■ Input voltage vs.output current (ON characterristics) Output current vs Input voltage (OFF characterristics) -10m -100 Vo= -0.3V -20 Output Current, Io (A) Input Voltage, VI (ON) (V) -50 -10 Ta=-40℃ 25℃ 100℃ -5 -2 -1 -200μ -100μ -50μ -20μ -10μ -5μ -500m -200m -2μ -100m -100μ -200μ -500 μ-1m -2m -5m -10m -20m -1μ 0 -50m -100 m Output Current, Io (A) -1.5 -2.0 -2.5 -3.0 -1 Vo= -5V -500m 500 Ta=100℃ 25℃ -40℃ Io/II=20 Ta=100℃ 25℃ -40℃ -200 m Output Voltage, VO(ON) V DC Current Gain, GI -1.0 Output voltage vs. output current 1K 100 -0.5 INPUT VOLTAGE, Vi(off) (V) DC current gain vs.output current 200 Vcc= -5V -5m Ta=100℃ 25℃ -2m -40℃ -1m -500μ 50 20 10 5 100m -50m -20m -10m -5m -2m 2 1 -100 μ -200 μ -500μ-1m -2m -5m -10m -20m -50m -100m Output Current, Io (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -1m -100μ -200μ -500μ-1m -2m -5m -10m -20m -50m -100m Output Current, Io (A) 3 Ver.A QW-R201-080.A DTA143E PNP EPITAXIAL SILICON TRANSISTOR U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 Ver.A QW-R201-080.A