100mA/50V Digital transistors(with built-in resistors) DTC014TM / DTC014TEB / DTC014TUB Dimensions (Unit : mm) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. VMT3 Abbreviated symbol : 10 EMT3F (3) Structure NPN epitaxial planar silicon transistor (Resistor built-in type) (1) (2) Abbreviated symbol : 10 UMT3F 2.0 0.53 0.9 1.25 (3) 0.425 2.1 0.425 0.32 (1) 0.53 Applications Inverter, Interface, Driver (2) 0.65 0.65 1.3 0.13 Abbreviated symbol : 10 Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) DTC014TM DTC014TEB DTC014TUB Equivalent circuit VMT3 Taping T2L EMT3F Taping TL UMT3F Taping TL 8000 3000 3000 ○ - ○ - ○ R1 C B : ベース C : コレクタ E : エミッタ E B R 1=10k Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation * Junction temperature Range of storage temperature Symbol M VCBO VCEO VEBO IC PD Tj Tstg Limits(DTC014T□) EB UB 50 50 5 100 150 200 150 -55 to +150 Unit V V V mA mW C C * Each terminal mounted on a reference land www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.08 - Rev.A Data Sheet DTC014TM / DTC014TEB / DTC014TUB Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Collector-Base breakdown voltage BVCBO 50 - - V IC=50A Collector-Emitter breakdown voltage BVCEO 50 - - V IC=1mA Emitter-Base breakdown voltage BVEBO 5 - - V IE=50A ICBO - - 500 nA VCB=50V Collector cut-off current Emitter cut-off current Collector-Emitter saturation voltage DC current gain Max. Test Conditions Unit IEBO - - 500 nA VEB=4V VCE(sat) - 0.05 0.15 V IC=5mA/ IB=0.5mA hFE 100 - 600 - VCE=10V / IC=5mA VCE=10V / IE=-5mA f=100MHz Transition frequency * fT - 250 - MHz Input resistance R1 7 10 13 k * Characteristics of built-in transistor DC CURRENT GAIN : hFE 1000 VCE=10V 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 10 1 0.1 1 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristics curves 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ic/IB=10 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 0.1 0.01 0.001 0.1 COLLECTOR CURRENT : IC (mA) Fig.1 DC Current Gain vs. Collector Current 1 1 10 100 COLLECTOR CURRNET : IC (mA) Fig.2 Collector Saturation Voltage vs. Collector Current 2/2 2011.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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