Rohm DTC023JM 100ma/50v digital transistors(with built-in resistors) Datasheet

100mA/50V Digital transistors(with built-in resistors)
DTC023JM / DTC023JEB / DTC023JUB
Dimensions (Unit : mm)
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
VMT3
Abbreviated symbol : 46
EMT3F
(3)
(1)
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
(2)
Abbreviated symbol : 46
UMT3F
0.53
0.9
(1)
0.65 0.65
1.3
0.53
0.425
2.1
Applications
Inverter, Interface, Driver
2.0
(3)
1.25
0.425
0.32
(2)
0.13
Abbreviated symbol : 46
Packaging specifications and hFE
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTC023JM
DTC023JEB
DTC023JUB
Equivalent circuit
VMT3
Taping
T2L
EMT3F
Taping
TL
UMT3F
Taping
TL
8000
3000
3000
○
-
-
○
OUT
R1
IN
R2
GND
IN
○
-
OUT
GND
R1=2.2k,R2=47k
Absolute maximum (Ta=25C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current *1
Output current
Power dissipation *2
Junction temperature
Range of storage temperature
M
Limits(DTC023J□)
EB
UB
50
12
-5
100
100
IC(max)
IO
PD
Tj
Tstg
150
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
C
C
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
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©2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.08 - Rev.A
Data Sheet
DTC023JM / DTC023JEB / DTC023JUB
Electrical characteristics (Ta=25C)
Parameter
Symbol
Input voltage
Output voltage
Min.
Typ.
VI(off)
-
-
0.5
V
VCC=5V / IO=100uA
VI(on)
1.1
-
-
V
VO=0.3V / IO=5mA
VO(on)
-
0.05
0.15
V
IO=5mA / II=0.5mA
II
-
-
3.6
mA
500
nA
VCC=50V / VI=0V
Input current
Max.
Test Conditions
Unit
VI=5V
IO(off)
-
-
DC current gain
GI
80
-
-
-
VO=10V / IO=5mA
Transition frequency *
fT
-
250
-
MHz
VCE=10V /IE=-5mA
f=100MHz
Input resistance
R1
1.54
2.2
2.86
k
Resistance ratio
R2/R1
17
21
26
-
Output current
* Characteristics of built-in transistor
Electrical characteristics curves
10
100
10
VCC=5V
OUTPUT CURRENT : IO (mA)
INPUT VOLTAGE : VI(on) (V)
VO=0.3V
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
1
0.1
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.1
0.01
0.001
0.1
1
10
0
100
0.5
OUTPUT CURRENT : IO (mA)
1
Fig.1 Input Voltage vs. Output Current
2
2.5
3
Fig.2 Input Voltage vs. Output Current
(ON characteristics)
(OFF characteristics)
1000
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
100
VO=10V
IO/II=10
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
1.5
INPUT VOLTAGE : V I(off) (V)
10
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.01
0.001
1
0.1
1
10
0.1
100
1
10
100
OUTPUT CURRENT : IO (mA)
OUTPUT CURRNET : IO (mA)
Fig.3 DC Current Gain vs. Output Current
Fig.4 Output Voltage vs. Output Current
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.08 - Rev.A
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R1120A
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