DinTek DTS6400 N-channel 60-v (d-s) mosfet halogen-free Datasheet

N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.026 at VGS = 10 V
4.5
0.036 at VGS = 4.5 V
2.1
VDS (V)
60
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Qg (Typ.)
2.3 nC
APPLICATIONS
• Battery Switch
• DC/DC Converter
TO-236
(SSOT23)
G
1
S
2
3
D
Top View
DTS6400
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Limit
60
± 20
4.5
1.8
ID
2.9b, c
1.5b, c
8
1.39
0.91b, c
6
1.8
1.66
1.06
1.09b, c
0.7b, c
- 55 to 150
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
≤5s
Maximum Junction-to-Ambientb, d
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
RthJA
RthJF
Typical
90
60
Maximum
115
75
Unit
°C/W
1
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
55
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
-5
1
8
µA
A
VGS = 10 V, ID = 1.9 A
0.019
0.026
VGS = 4.5 V, ID = 1.7 A
0.026
0.036
VDS = 15V, ID = 1.9 A
5
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
190
tr
Rise Time
td(off)
Turn-Off Delay Time
VDS = 30 V, VGS = 4.5 V, ID = 1.9 A
f = 1 MHz
VDD = 30 V, RL = 20 Ω
ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
VDD = 30 V, RL = 20 Ω
ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω
tf
Fall Time
4.5
6.8
2.3
3.5
0.8
nC
1
tf
Fall Time
pF
15
VDS = 30 V, VGS = 10 V, ID = 1.9 A
td(on)
Turn-On Delay Time
26
VDS = 30 V, VGS = 0 V, f = 1 MHz
0.6
2.8
5.6
4
6
10
15
10
15
7
10.5
15
23
16
24
11
17
11
17
Ω
ns
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
2.39
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
8
IS = 1.5 A
IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
15
23
ns
10
15
nC
12
3
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
10
VGS = 10 thru 5 V
8
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 4 V
6
4
3
TC = - 55 °C
2
TC = 125 °C
1
2
VGS = 3 V
TC = 25 °C
VGS = 2 V
0
0
1
2
3
4
0
0.0
5
0.7
2.1
2.8
3.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
300
240
0.24
VGS = 4.5 V
0.18
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.4
VGS = 10 V
180
120
0.12
60
Coss
0.06
Crss
0
0
2
4
6
8
10
0
10
20
30
40
50
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
60
2.0
8
VGS = 10 V, ID = 4.5 A
6
VDS = 48 V
4
2
(Normalized)
1.7
VDS = 30 V
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 4.5 A
1.4
VGS = 4.5 V, ID = 1.7 A
1.1
0.8
0
0
1
2
3
4
5
0.5
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.35
10
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 4.5 A
TJ = 25 °C
1
0.1
0.0
0.30
TJ = 125 °C
0.25
0.20
TJ = 25 °C
0.15
0.10
0.2
0.4
0.6
0.8
1.0
3
1.2
4
5
VSD - Source-to-Drain Voltage (V)
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.4
10
8
2.1
Power (W)
VGS(th) (V)
ID = 250 µA
1.8
TA = 25 °C
Single Pulse
6
4
1.5
2
1.2
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
Threshold Voltage
Single Pulse Power
10
Limited by R DS(on)*
I D - Drain Current (A)
100 µs
1
1 ms
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
1 s, 10 s
DC
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area
4
10
Time (s)
TJ - Temperature (°C)
100
100
600
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
I D - Drain Current (A)
4
30
2
1
0.0
25
0
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
2.0
1.2
1.6
Power (W)
Power (W)
0.9
1.2
0.8
0.6
0.3
0.4
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 130 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
.
6
1
10
Package Information
www.din-tek.jp
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.95 BSC
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
1
Application Note
www.din-tek.jp
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
1
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
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1
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