IXYS DWLP23-03A Rectifier diodes & fred Datasheet

Contents
Page
Symbols and Definitions
Nomenclature
General Information
Assembly Instructions
FRED, Rectifier Diode and Thyristor Chips in Planar Design
2
2
3
4
5
IGBT Chips
VCES
G-Series, Low VCE(sat) B2 Types
G-Series, Fast C2 Types
S-Series, SCSOA Capability, Fast Types
E-Series, Improved NPT³ technology
600 ...1200 V
600 V
600 V
1200 ... 1700 V
IC
7 ... 20 A
7 ... 20 A
10 ... 20 A
20 ... 150 A
6
6
6
7
MOSFET Chips
VDSS
HiPerFETTM Power MOSFET
PolarHTTM MOSFET, very Low RDS(on)
P-Channel Power MOSFET
N-Channel Depletion Mode MOSFET
70 ...1200 V
55 ... 300 V
-100 ...-600 V
500 ...1000 V
RDS(on)
0.005 ... 4.5 Ω
0.015 ... 0.135 Ω
0.06 ... 1.2 Ω
30 ... 110 Ω
Layouts
8-10
11
12
12
13-17
Bipolar Chips
VRRM / VDRM
Rectifier Diodes
FREDs
Low Leakage FREDs
SONIC-FRDTM Diodes
GaAs Schottky Diodes
Schottky Diodes
Phase Control Thyristors
Fast Rectifier Diodes
1200 ... 1800 V
600 ... 1200 V
200 ... 1200 V
600 ... 1800 V
100 ... 600 V
8 ... 200 V
800 ... 2200 V
1600 ... 1800 V
IF(AV)M / IT(AV)M
12 ... 416 A
8 ... 244 A
9 ... 148 A
12 ... 150 A
3.5 ... 25 A
28 ... 145 A
15 ... 540 A
10 ... 26 A
18-19
20-21
22-23
24-25
26-27
28-31
32-33
34
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates
What is DCB/DAB?
35
DCB Specification
36
1
IXYS reserves the right to change limits, test conditions and dimensions
Chip-Shortform2004.pmd
1
26.10.2004, 12:44
Symbols and Definitions
Cies
Ciss
-di/dt
IC
ID
IF
IF(AV)M
IFSM
IGT
IR
IRM
IT
IT(AV)M
ITSM
RDS(on)
Rthjc
rT
Tcase
Th
tfi
Tj, T(vj)
Tjm, T(vj)m
trr
VCE(sat)
VCES
VDRM
VDSS
VF
VR
VRRM
VT
VT0
Input capacitance of IGBT
Input capacitance of MOSFET
Rate of decrease of forward current
DC collector current
Drain current
Forward current of diode
Maximum average forward current at specified Th
Peak one cycle surge forward current
Gate trigger current
Reverse current
Maximum peak recovery current
Forward current of thyristor
Maximum average on-state current of a thyristor
at specified Th
Maximum surge current of a thyristor
Static drain-source on-state resistance
Thermal resistance junction to case
Slope resistance of a thyristor or diode
(for power loss calculations)
Case temperature
Heatsink temperature
Current fall time with inductive load
Junction temperature
Maximum junction temperature
Reverse recovery time of a diode
Collector-emitter saturation voltage
Maximum collector-emitter voltage
Maximum repetitive forward blocking
voltage of thyristor
Drain-source break-down voltage
Forward voltage of diode
Reverse voltage
Maximum peak reverse voltage of thyristor or
diode
On-state voltage of thyristor
Threshold voltage of thyristors or diodes (for
power loss calculation only)
Nomenclature
IGBT and MOSFET Discrete
IXSD 40N60A
(Example)
IX
IXYS
Die technology
NPT3 IGBT
HiPerFETTM Power MOSFET
Fast IGBT
IGBT with SCSOA capability
Standard Power MOSFET
Unassembled chip (die)
E
F
G
S
T
D
40
Current rating, 40 = 40 A
N
P
N-channel type
P-channel type
60
Voltage class, 60 = 600 V
xx
A
Q
Q2
P
L
-A
B
C
Diode and Thyristor Chips
C-DWEP 69-12
(Diode Example)
C
Package type
D
Chip function
D = Silicon rectifier diode
W
Unassembled chip
EP
Process designator
EP = Epitaxial rectifier diode
N = Rectifier diode, cathode on top
P = Rectifier diode, anode on top
FN = Fast Rectifier diode, cathode on top
FP = Fast Rectifier diode, anode on top
69
-12
Registration No.:
001947 TS2/765/17557
Registration No.:
001947
Chip and DCB Ceramic Substrates Data book
Edition 2004
© IXYS Semiconductor GmbH
Chip-Shortform2004.pmd
(Thyristor Example)
Package type
Chip function
C = Silicon phase control thyristor
Unassembled chip
P
Process designator
P = Planar passivated chip
cathode on top
All Rights reserved
2
Voltage class, 12 = 1200 V
W
W
As far as patents or other rights of third parties are concerned, liability is only
assumed for chips and DCB parts per se, not for applications, processes and
circuits implemented with components or assemblies. Terms of delivery and the
right to change design or specifications are reserved.
Current rating value of one chip in A
W-CWP 55-12/18
C
Published by IXYS Semiconductor GmbH
Marketing Communications
Edisonstraße 15, D-68623 Lampertheim
MOSFET
Prime RDS(on) for standard MOSFET
Low gate charge die
Low gate charge die, 2nd generation
PolarHTTM Power MOSFET
Linear Mode MOSFET
IGBT
No letter, low VCE(sat)
Or A2, std speed type
Or B2, high speed type
Or C2, very high speed type
55
12/18
Current rating value of one chip in A
Voltage class, 12/18 = 1200 up to 1800 V
© 2004 IXYS All rights reserved
2
26.10.2004, 12:44
General Informations for Chips
When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip
attach process are very important to the reliability and performance of the final product. This brochure provides several guidelines
that describe recommended chip attachment pro-cedures. These methods have been used successfully for many years at IXYS.
Available forms of chip packings
IXYS offers various options.
Please order from one of the following possibilities:
Packaging Options
Delivery form
C-...*
Chips in tray (Waffle Pack);
Electrically tested
T-...*
Chips in wafer, unsawed;
Bipolar = 5" (125 mm∅) wafer; Electrically tested, rejects are inked
W-...*
Chips in wafer on foil, sawed;
Bipolar = 5" (125 mm∅) wafer; Electrically tested, rejects are inked
...* must be amended by the exact chip type designation.
Packing, Storage and Handling
Chips should be transported in their original containers. All chip transfer to other containers or for assembly should be done only with
rubber-tipped vacuum pencils. Contact with human skin (or with a tool that has been touched by hand) leaves an oily residue that may
adversely impact subsequent chip attach or reliability.
At temperatures below 104°F (40°C), there is no limitation on storage time for chips in sealed original packages. Chips removed from
original packages should be assembled immediately. The wetting ability of the contact metallization with solder can be preserved by
storage in a clean and dry nitrogen atmosphere.
The IGBT and MOSFET Chips are electrostatic discharge (ESD) sensitive. Normal ESD precautions for handling must be observed.
Prior to chip attach, all testing and handling of the chips must be done at ESD safe work stations according to DIN IEC 47(CO) 701.
Ionized air blowers are recommended for added ESD protection.
Contamination of the chips degrades the assembly results.Finger prints, dust or oily deposits on the surface of the chips have to be
absolutely avoided.
Rough mechanical treatment can cause damage to the chip.
Electrical Tests
The electrical properties listed in the data sheet presume correctly assembled chips. Testing of non-assembled chips requires the
following precautions:
- High currents have to be supplied homogeneously to the whole metallized contact area.
- Kelvin probes must be used to test voltages at high currents
- Applying the full specified blocking or reverse voltage may cause arcing across the glass passivated junction termination, because
the electrical field on top of the passivation glass causes ionization of the surrounding air. This phenomenon can be avoided by using
inert fluids or by increasing the pressure of the gas surrounding the chip to values above 30 psig (2 bars).
General Rules for Assembly
The linear thermal expansion coefficient of silicon is very small compared to usual contact metals. If a large area metallized silicon
chip is directly soldered to a metal like copper, enormous shear stress is caused by temperature changes (e.g. when cooling down from
the solder temperature or by heating during working conditions) which can disrupt the solder mountdown.
If it is found that larger chips are cracking during mountdown or in the application, then the use of a low thermal expansion coefficient
buffer layer, e.g. tungsten, molybdenum or Trimetal®, for strain relief should be considered. An alternative solution is to soft-solder these
larger chips to DCB ceramic substrates because of their matching thermal expansion coefficients.
3
IXYS reserves the right to change limits, test conditions and dimensions
Chip-Shortform2004.pmd
3
26.10.2004, 12:44
Assembly Instructions
MOS/IGBT Chips
Recommended Solder System
IXYS recommends a soft solder chip attach using a solder composition of 92.5 % Pb, 5 % Sn and 2.5 % Ag. The maximum chip attach
temperature is 460°C for MOSFET and 360°C for HiPerFETTM and IGBT.
Wire Bonding
It is recommended to use wire of diameter not greater than 0.38 mm (0.015") for bonding to the source emitter and gate pads. Multiple
wires should be used in place of thicker wire to handle high drain or emitter currents. See tables for number of recommended wire
bonds. At smaller gate pads 0.15 mm is recommended.
Thermal Response Testing
To assure good chip attach processing, thermal response testing per MIL STD 750, Method 3161 or equivalent should be performed.
Bipolar Chips
Assembling
IXYS bipolar semiconductor chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, either
the same metallization scheme or an alumunium layer sufficiently thick for ultrasonic bonding. Note that the last layer of metal for
soldering is pure silver.
Regardless of their type all chips possess the same glass passivated junction termination system on top of the chip. For that reason
they can be easily chip bonded or they can all be simply soldered to a flat contacting electrode in accordance to the General Rules on
Page 3. All kinds of the usual soft solders with melting points below 660°F (350°C) can be used thanks to their pure silver top metal.
Solders with high melting points are preferable due to their better power cycling capability, i.e. they are more resistant to thermal
fatigue.
Soldering temperature should not exceed 750°F (400°C). The maximum temperature should not be applied for more than five
minutes.
As already mentioned above the electrical properties quoted in the data sheets can only be obtained with properly assembled chips.
This is only possible when all contact materials to be soldered together are well wetted and the solder is practically free of voids.
A simple means to achieve good solder connections is to use a belt furnace running with a process gas containing at least 10 %
Hydrogen in Nitrogen.
Other approved methods are also allowed, provided that the above mentioned temperature-time-limits are not exceeded and
temperature shocks above 930°F/min (500 K/min) are avoided.
We do not recommend the use of fluxes for soldering!
Ultrasonic Wire Bonding
Chips provided with a thick aluminium layer are designed for ultrasonic wire bonding. Wire diameters up to 500 µm can be used
dependent on chip types. Setting wires in parallel and application of stitch bonding lead to surge current ratings comparable to
soldered chips.
Coating
Although the chips are glass passivated, they must be protected against arcing and environmental influences. The coating material
that is in contact with the chip surface must have the following properties:
- elasticity (to prevent mechanical stress)
- high purity, no contamination with alkali metals
- good adhesion to metals and glass passivation.
4
Chip-Shortform2004.pmd
© 2004 IXYS All rights reserved
4
26.10.2004, 12:44
FRED, Rectifier Diode and Thyristor Chips in Planar Design
Fast Recovery Epitaxial Diodes (FRED)
Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
diodes. At increasing switching frequencies, the proper functioning and efficiency of the power switch, aside from conduction losses,
is determined by the turn-off behavior of the diode (characterized by Qrr, IRM and trr - Fig. 1.
The reverse current character-istic following the peak reverse current IRM is
another very im-portant property. The slope of the decaying reverse current
dirr/dt results from design para- meters (technology and dif-fusion of the
FRED chip Fig. 2. In a circuit this current slope, in conjunction with parasitic
induc-tances (e.g. connecting leads, causes over-voltage spikes and high
frequency interference vol-tages.The higher the dirr/dt ("hard recovery" or
"snap-off" behavior) the higher is the resulting additional stress for both the
diode and the paralleled switch. A slow decay of the reverse current ("soft
recovery" behavior), is the most desirable characteristic, and this is designed
into all FRED. The wide range of available blocking voltages makes it
possible to apply these FRED as output rectifiers in switch-mode power
supplies (SMPS) as well as protective and free-wheeling diodes for power
switches in inverters and welding power supplies.
Fig. 1: Current and voltage during turn-on and
turn-off switching of fast diodes
Glasspassivation
Rectifier Diode and Thyristor Chips
The figures 3 a-c show cross sectional views of the diode and thyristor
chips in the passivation area. All thyristor and diode chips (DWN, DWFN,
CWP) are fabricated using separation diffusion processes so that all
junctions terminate on the topside of the chip. Now the entire bottom
surfaces of all chips are available for soldering onto a DCB or other ceramic
substrate without a molybdenum strain buffer. The elimination of the strain
buffer and its solder joint reduces thermal resistance and increases
blocking voltage stability. The junction termination areas are passivated
with glass, whose thermal expansion coefficient matches that of silicon. All
silicon chips increasingly use planar technology with guard rings and
channel stoppers to reduce electric fields on the chip surface.
The contact areas of the chips have vapor deposited metal layers which
contribute substantially to their high power cycle capability. All chips are
processed on silicon wafers of 5" diameter and diced after a wafer sample
test which auto-matically marks chips not meeting the electrical specification.
The chip geometry is square or rectangular.
Fig. 3a-c
Cross sections of Chips in the passivation area
a) Diode chip, type DWN, DWFN
b) Diode chip, type DWP, DWFP
c) Thyristor chip, type CWP
Guard ring
Anode
A no de
E pitax ie Slayer
ch ich t n - nEpitaxy
S ub stra t n+ n+
Substrate
Cathode
K atho de
Metalization
Fig. 2: Cross section of glassivated planar epitaxial
diode chip with seperation diffusion (type DWEP)
Guard ring
p
n
n+
Fig. 3b)
Glasspassivation
Glasspassivation
Metalization
Emitter
Fig. 3a)
Glasspassivation
Guard ring
Channelstopper
Fig. 3c)
Metalization
Metalization
5
IXYS reserves the right to change limits, test conditions and dimensions
Chip-Shortform2004.pmd
5
26.10.2004, 12:44
Chip-Shortform2004.pmd
Rectifier Diodes
TVJM
V
IR
VRRM
TVJ M
typ. mA
DWN 5
DWP 5
800 1200
0.7
0.7
150
DWN 2
DWN 9
DWN 17
DWP 17
DWN 21
DWP 21
DWN 35
DWP 35
DWN 50
DWP 50
DWN 75
DWP 75
DWN 110
DWP 110
DWN 340
1200 1800
DWN 108
DWN 347
1600 2200
Type
VRRM
IF(AV)M
RthJC 1
VF
TVJ =
rect. d = 0.5
Reverse Recovery
@-di/dt
IRM
@IF
25°C; VR = 100 V
A
A
A/µs
18
typ.
K/W
25°C
V
125°C
V
12
12
2.80
2.80
1.14
1.14
1.14
1.14
7
7
140
140
tbd
tbd
tbd
tbd
tbd
tbd
0.7
1.0
1.5
1.5
3.0
3.0
1.5
1.5
2.0
2.0
2.0
2.0
3.5
3.5
15.0
12
20
31
31
42
41
59
58
78
76
115
118
253
253
416
2.80
1.80
1.10
1.10
0.90
0.90
0.65
0.65
0.50
0.50
0.33
0.35
0.16
0.16
0.10
1.14
1.28
1.34
1.37
1.33
1.35
1.24
1.25
1.31
1.33
1.26
1.27
1.18
1.18
1.09
1.14
1.28
1.34
1.37
1.33
1.35
1.24
1.25
1.31
1.33
1.26
1.27
1.18
1.18
1.09
7
30
50
50
80
80
80
80
150
150
200
200
300
300
300
150
300
320
320
500
500
630
630
900
900
1500
1500
3200
3200
5900
tbd
tbd
tbd
tbd
tbd
tbd
11
11
12
12
24
24
45
45
235
tbd
tbd
tbd
tbd
tbd
tbd
50
50
50
50
50
50
50
50
30
tbd
tbd
tbd
tbd
tbd
tbd
0.64
0.64
1
1
3
3
6
6
50
3.5
3.5
253
788
0.16
0.05
1.18
1.10
1.18
1.10
300
600
3200
10500
45
45
50
40
6
50
°C
TC = 100°C
A
IFSM
@IF
A
A
26.10.2004, 12:44
1 Mounted on DCB
© 2004 IXYS All rights reserved
18
Chip-Shortform2004.pmd
19
DWN 5
DWP 5
•
•
26.10.2004, 12:44
DWN 2
DWN 9
DWN 17
DWP 17
DWN 21
DWP 21
DWN 35
DWP 35
DWN 50
DWP 50
DWN 75
DWP 75
DWN 110
DWP 110
DWN 340
•
•
•
•
•
•
•
•
•
DWN 108
DWN 347
•
•
Tolerance
bondable
Type
solderable
Rectifier Diodes
•
•
•
•
•
•
•
•
•
•
•
•
•
Chips
per
Wafer
Dimensions
Sithickn.
A
mm
B
mm
mm
1123
716
4.40
4.40
2.10
2.10
0.265
0.265
1204
684
518
518
346
346
259
259
198
198
125
125
58
58
32
2.95
3.90
4.45
4.45
5.40
5.40
6.20
6.20
7.10
7.10
8.70
8.70
12.30
12.30
16.20
2.95
3.90
4.45
4.45
5.40
5.40
6.20
6.20
7.10
7.10
8.70
8.70
12.30
12.30
16.20
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
58
16
12.30
25.30
12.30
18.50
0.315
0.315
-0.1
-0.1
±5%
DWN
DWP
© 2004 IXYS All rights reserved
19
Chip-Shortform2004.pmd
FRED - Fast Recovery Epitaxial Diodes
Type
VRRM
V
20
IR
VRRM
125°C
mA
TVJM
150
°C
IF(AV)M
rect. d = 0.5
TC = 100°C
A
RthJC 1
VF
typ.
K/W
TVJ =
25°C
V
54
91
244
0.9
tbd
0.4
1.09
1.03
1.12
IFSM
@IF
IRM
25°C; VR = 100 V
A
Reverse Recovery
@-di/dt
@IF
trr
VR = 30 V
typ. ns
V
@
°C
A
A
0.84
0.87
0.87
150
150
150
30
100
125
300
475
1200
4
4
2
50
100
12.5
100
100
25
35
35
tbd
@IF
@-di/dt
A
A/µs
1
1
1
100
200
350
26.10.2004, 12:44
DWEP 27-02
DWEP 37-02
DWEP 77-02
200
5.0
11.0
20.0
DWEP 8-06
DWEP 12-06
DWEP 15-06
DWEP 23-06
DWEP 25-06
DWEP 35-06
DWEP 55-06
DWEP 75-06
600
1.5
1.5
3.0
7.0
7.0
14.0
17.0
20.0
tbd
8
12
30
30
60
80
162
2.5
2.5
1.6
0.9
0.9
0.8
0.7
0.4
1.65
1.45
1.65
1.53
1.53
1.73
1.58
1.31
1.48
1.31
1.48
1.33
1.38
1.48
1.38
1.10
150
150
150
150
150
150
125
125
8
8
16
30
43
70
75
75
50
100
100
250
300
550
600
1000
5
5
5
5
5
5
5
20
12
25
25
50
50
100
100
80
100
100
100
100
100
100
100
200
tbd
35
35
35
35
35
35
35
tbd
tbd
50
50
100
100
200
200
350
DWEP 3-10
DWEP 10-10
DWEP 18-10
DWEP 20-10
DWEP 30-10
DWEP 50-10
DWEP 70-10
1000
2.0
4.0
7.0
7.0
14.0
17.0
20.0
tbd
12
30
30
60
82
129
2.5
1.6
0.9
0.9
0.8
0.7
0.4
2.65
2.65
2.43
2.35
2.24
2.12
1.89
2.09
2.09
2.04
1.99
1.79
1.68
1.57
150
150
150
150
150
125
125
6
12
30
36
60
50
75
40
75
200
200
500
500
800
7
5
7
7
7
6
14
12
25
50
50
100
50
80
100
100
100
100
100
120
200
tbd
35
35
35
35
35
35
tbd
tbd
50
100
100
200
200
350
DWEP 6-12
DWEP 9-12
DWEP 17-12
DWEP 19-12
DWEP 29-12
DWEP 49-12
DWEP 69-12
1200
2.0
4.0
7.0
7.0
14.0
17.0
20.0
tbd
12
30
30
60
77
123
2.5
1.6
0.9
0.9
0.7
0.7
0.4
2.55
2.55
2.60
2.50
2.35
2.19
1.77
2.19
2.19
2.19
2.19
1.94
1.89
1.54
150
150
150
150
150
125
125
5
12
30
30
60
50
75
80
75
200
200
500
500
800
7
5
7
7
7
9
20
10
25
50
50
100
50
75
100
100
100
100
100
100
200
tbd
50
40
40
40
40
40
tbd
tbd
50
100
100
200
200
350
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1 Mounted on DCB
© 2004 IXYS All rights reserved
20
Chip-Shortform2004.pmd
FRED - Fast Recovery Epitaxial Diodes
DWEP 8-06
DWEP 12-06
DWEP 15-06
DWEP 23-06
DWEP 25-06
DWEP 35-06
DWEP 55-06
DWEP 75-06
26.10.2004, 12:44
DWEP 3-10
DWEP 10-10
DWEP 18-10
DWEP 20-10
DWEP 30-10
DWEP 50-10
DWEP 70-10
DWEP 6-12
DWEP 9-12
DWEP 17-12
DWEP 19-12
DWEP 29-12
DWEP 49-12
DWEP 69-12
Tolerance
Dimensions
Sithickn.
bondable
21
DWEP 27-02
DWEP 37-02
DWEP 77-02
Chips
per
Wafer
solderable
Type
•
•
•
•
518
257
151
4.45
6.20
8.91
4.45
6.20
7.22
0.35
0.35
0.35
•
•
•
•
•
•
•
•
1612
1851
990
531
518
257
230
151
3.60
2.40
3.25
5.50
4.45
6.20
8.65
8.91
1.80
2.40
3.25
3.50
4.45
6.20
4.95
7.22
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
•
•
•
•
•
•
•
1612
990
531
518
257
230
151
1.80
3.25
5.50
4.45
6.20
8.65
8.91
3.60
3.25
3.50
4.45
6.20
4.95
7.22
0.35
0.35
0.35
0.35
0.35
0.35
0.35
•
•
•
•
•
•
•
1851
990
531
518
257
230
151
2.40
3.25
5.50
4.45
6.20
8.65
8.91
2.40
3.25
3.50
4.45
6.20
4.95
7.22
0.35
0.35
0.35
0.35
0.35
0.35
0.35
-0.1
-0.1
±5%
•
•
•
•
•
•
•
•
•
•
•
•
•
A
mm
B
mm
mm
© 2004 IXYS All rights reserved
21
Chip-Shortform2004.pmd
Low Leakage Fast Recovery Epitaxial Diodes
Type
VRRM
V
IR
VRRM
TVJ M
mA
TVJM
175
°C
IF(AV)M
rect. d = 0.5
TC= 100°C
A
R thJC 1
22
typ.
K/W
VF
TVJ =
25°C
175°C
V
V
IFSM
A
IRM
25°C; VR = 100 V
A
14
29
25
46
2.50
1.60
1.60
0.90
1.21
0.99
1.13
1.10
0.75
0.74
0.78
0.80
5
12
12
30
80
140
140
325
2.4
2.4
1.1
2.0
10
25
25
50
100
100
100
100
25
25
25
25
@IF
A
Reverse Recovery
@IF
@-di/dt
trr
VR = 30 V
typ. ns
@IF
@-di/dt
A
A/µs
1
1
1
1
50
100
100
200
26.10.2004, 12:44
DWLP 4-02
DWLP 15-02
DWLP 15-02B
DWLP 25-02
200
0.20
0.50
0.50
0.20
DWLP 4-03
DWLP 8-03
DWLP 15-03
DWLP 15-03A
DWLP 23-03
DWLP 23-03A
DWLP 55-03
DWLP 75-03
300
0.20
0.25
0.50
0.50
1.00
1.00
2.50
4.00
13
15
25
29
51
41
72
117
2.80
2.50
1.60
1.60
0.90
0.90
0.65
0.40
1.63
1.45
1.44
1.26
1.19
1.49
1.42
1.43
0.96
0.95
0.94
0.60
0.77
0.99
0.91
0.92
5
6
12
12
30
30
60
100
40
60
110
110
300
300
600
1000
1.3
1.4
1.4
1.4
3.0
1.9
2.8
3.2
10
12
25
25
50
50
130
200
100
100
100
100
100
100
100
100
30
30
30
30
30
25
30
30
1
1
1
1
1
1
1
1
50
50
100
100
200
200
300
400
DWLP 8-04
DWLP 15-04
DWLP 23-04
DWLP 55-04
DWLP 75-04
DWLP 150-04
400
0.25
0.50
1.00
2.50
4.00
8.50
14
24
46
67
117
148
2.50
1.60
0.90
0.65
0.40
0.35
1.40
1.40
1.43
1.12
1.39
6.14
0.91
0.90
0.93
0.81
0.89
9.72
6
12
30
60
100
300
60
110
300
600
1000
1200
1.4
2.5
2.5
3.5
4.0
9.5
12
25
50
130
200
200
100
100
100
100
100
100
30
30
30
30
30
30
1
1
1
1
1
1
50
100
200
300
400
800
DWLP 4-06
DWLP 8-06A
DWLP 8-06B
DWLP 15-06A
DWLP 15-06B
DWLP 23-06A
DWLP 23-06B
DWLP 55-06
DWLP 75-06
600
0.20
0.25
0.25
0.50
0.50
1.00
2.00
2.50
4.00
11
12
11
21
16
40
30
62
99
2.80
2.50
2.50
1.60
1.60
0.90
0.90
0.65
0.40
1.97
1.95
2.39
1.95
2.38
1.54
2.45
1.92
1.93
1.14
1.13
1.25
1.12
1.23
1.10
1.35
1.10
1.11
5
6
6
12
12
30
30
60
100
40
50
50
110
110
250
250
600
1000
2.6
2.6
1.4
2.9
1.5
3.5
2.0
4.0
4.5
10
12
12
25
25
50
50
130
200
100
100
100
100
100
100
100
100
100
30
35
30
35
35
35
30
35
35
1
1
1
1
1
1
1
1
1
50
50
50
100
100
200
200
300
400
1200
0.25
0.50
1.00
2.50
4.00
9
14
29
48
78
2.50
1.60
0.90
0.65
0.40
2.61
2.45
2.68
2.54
2.56
1.46
1.52
1.52
1.40
1.42
6
12
30
60
100
40
90
200
500
800
5.0
5.7
6.7
7.0
7.4
12
25
50
130
200
100
100
100
100
100
40
40
40
40
40
1
1
1
1
1
50
100
200
300
400
DWLP 8-12
DWLP 15-12
DWLP 23-12
DWLP 55-12
DWLP 75-12
1 Mounted on DCB
© 2004 IXYS All rights reserved
22
Chip-Shortform2004.pmd
bondable
solderable
Low Leakage Fast Recovery Epitaxial Diodes
Chips
per
Wafer
DWLP 4-02
DWLP 15-02
DWLP 15-02B
DWLP 25-02
•
•
•
•
1960
990
990
518
3.00
3.25
3.25
4.45
1.80
3.25
3.25
4.45
0.37
0.37
0.37
0.37
DWLP 4-03
DWLP 8-03
DWLP 15-03
DWLP 15-03A
DWLP 23-03
DWLP 23-03A
DWLP 55-03
DWLP 75-03
•
•
•
•
•
•
•
•
1960
1612
990
990
531
531
230
151
3.00
3.60
3.25
3.25
5.50
5.50
8.65
8.91
1.80
1.80
3.25
3.25
3.50
3.50
4.95
7.22
0.37
0.37
0.37
0.37
0.37
0.37
0.37
0.37
•
•
•
•
•
•
•
•
•
1612
990
531
230
151
74
3.60
3.25
5.50
8.65
8.91
13.00
1.80
3.25
3.50
4.95
7.22
9.77
0.38
0.38
0.38
0.38
0.38
0.38
•
•
•
•
•
•
•
•
•
•
•
1960
1612
1612
990
990
531
531
230
151
3.00
3.60
3.60
3.25
3.25
5.50
5.50
8.65
8.91
1.80
1.80
1.80
3.25
3.25
3.50
3.50
4.95
7.22
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
•
•
•
•
•
1612
990
531
230
151
3.60
3.25
5.50
8.65
8.91
1.80
3.25
3.50
4.95
7.22
0.46
0.46
0.46
0.46
0.46
-0.1
-0.1
±5%
Type
23
26.10.2004, 12:44
DWLP 8-04
DWLP 15-04
DWLP 23-04
DWLP 55-04
DWLP 75-04
DWLP 150-04
DWLP 4-06
DWLP 8-06A
DWLP 8-06B
DWLP 15-06A
DWLP 15-06B
DWLP 23-06A
DWLP 23-06B
DWLP 55-06
DWLP 75-06
DWLP 8-12
DWLP 15-12
DWLP 23-12
DWLP 55-12
DWLP 75-12
Tolerance
•
•
Dimensions
Sithickn.
A
mm
B
mm
mm
© 2004 IXYS All rights reserved
23
Chip-Shortform2004.pmd
SONIC-FRDTM Diodes
Type
VRRM
V
24
DWHP 8-06 F
DWHP 15-06 F
DWHP 23-06 F
DWHP 56-06 F
DWHP 69-06 F
DWHP 150-06 F
in design
600
in design
IR
VRRM
125°C
typ. mA
TVJM
tbd
tbd
tbd
tbd
tbd
tbd
150
°C
IF(AV)M
rect. d = 0.5
TC = 100°C
A
RthJC 1
typ.
K/W
VF
TVJ =
25°C
150°C
V
V
A
A
IRM
25°C
typ. A
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
0.90
0.65
0.40
tbd
tbd
tbd
1.94
2.04
2.05
tbd
tbd
tbd
1.68
1.78
1.80
tbd
tbd
tbd
20
60
100
tbd
tbd
tbd
200
450
750
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
20
60
100
tbd
tbd
tbd
200
450
750
tbd
IFSM
@IF
Reverse Recovery
@IF
trr
typ.
ns
A
@-di/dt
A/µs
26.10.2004, 12:44
DWHFP 15-12 F
DWHFP 23-12 F
DWHFP 56-12 F
DWHFP 56-12 S
DWHFP 69-12 F
DWHFP 69-12 S
DWHFP 150-12 S
1200
0.1
0.2
0.6
0.6
1
1
1.5
12
17
29
37
47
60
150
0.90
0.90
0.65
0.65
0.40
0.40
tbd
3.08
2.97
3.15
2.12
3.17
2.13
2.00
2.61
2.49
2.70
1.98
2.72
1.99
1.87
10
20
60
60
100
100
150
100
200
450
450
750
750
1150
tbd
7
18
28
36
53
54
tbd
65
50
175
125
330
170
10
20
60
60
100
100
150
100
200
450
tbd
750
750
1150
DLFP 55-17 S
DLFP 68-17 S
DLFP 150-17 S
DLFP 200-17 S
1700
0.6
1
1.8
tbd
31
51
tbd
tbd
0.65
0.40
0.22
tbd
2.35
2.34
1.95
tbd
2.46
2.44
2.03
tbd
60
100
tbd
tbd
350
650
1150
tbd
30
50
78
tbd
tbd
150
350
tbd
60
100
150
tbd
400
600
1150
tbd
DLFP 15-16/18 F
DLFP 25-16/18 F
DLFP 55-16/18 F
DLFP 68-16/18 F
16001800
0.1
0.2
0.6
1
12
16
27
44
0.90
0.90
0.65
0.40
3.01
2.86
2.90
2.89
3.08
2.90
2.94
2.93
10
20
60
100
50
150
350
650
tbd
21
30
50
tbd
180
330
240
10
20
60
100
50
450
450
800
1 Mounted on DCB
© 2004 IXYS All rights reserved
24
Chip-Shortform2004.pmd
25
bondable
Type
solderable
SONIC-FRDTM Diodes
Chips
per
Wafer
Dimensions
A
mm
B
mm
26.10.2004, 12:44
DWHP 8-06 F
DWHP 15-06 F
DWHP 23-06 F
DWHP 56-06 F
DWHP 69-06 F
DWHP 150-06 F
•
•
•
•
•
•
tbd
968
532
231
152
88
3.60
3.25
5.50
8.65
8.91
11.40
1.80
3.25
3.50
4.95
7.22
9.40
DWHFP 15-12 F
DWHFP 23-12 F
DWHFP 56-12 F
DWHFP 56-12 S
DWHFP 69-12 F
DWHFP 69-12 S
DWHFP 150-12 S
•
•
•
•
•
•
•
968
532
231
231
152
152
88
3.25
5.50
8.65
8.65
8.91
8.91
11.40
3.25
3.50
4.95
4.95
7.22
7.22
9.40
DLFP 55-17 S
DLFP 68-17 S
DLFP 150-17 S
DLFP 200-17 S
•
•
•
•
231
152
88
59
8.65
8.91
11.40
12.40
4.95
7.22
9.40
12.40
DLFP 15-16/18 F
DLFP 25-16/18 F
DLFP 55-16/18 F
DLFP 68-16/18 F
•
•
•
•
968
532
231
152
3.25
4.45
8.65
8.91
3.25
4.45
4.95
7.22
-0.1
-0.1
Tolerance
Sithickn.
mm
0.180
0.265
±5%
© 2004 IXYS All rights reserved
25
Chip-Shortform2004.pmd
GaAs Schottky Diodes
Type
VRRM
TVJM
26
IF(AV)M
rect.
d = 0.5
A
RthJC
TC = 90°C
typ.
K/W
VF typ
TVJ =
25°C
125°C
V
V
8.5
25.0
10.12
5.20
0.62
0.99
0.54
0.94
2.0
10.0
700
< 10
19.0
19.0
12.5
80.0
@IF
A
IR typ
@VRRM
125°C
µA
Cj
0,5*VRRM
125°C
pF
IFSM
A
26.10.2004, 12:44
V
°C
DWGS04-01A
DWGS10-01C
100
175
DWGS04-018A
DWGS04-018C
DWGS10-018A
DWGS10-018C
DWGS20-018A
DWGS20-018C
180
5.0
8,4
11.0
15.0
17.0
23.0
10.12
10.12
5.20
5.20
3.70
3.70
0.85
1.25
0.80
1.21
0.80
1.24
0.85
1.02
0.80
1.04
0.80
1.07
2.0
4.0
5.0
10.0
7.5
20.0
700
< 10
1300
< 10
2000
< 10
8.8
8.8
22.0
22.0
33.0
33.0
12.5
32.0
30.0
80.0
50.0
120.0
DWGS04-025A
DWGS04-025C
DWGS10-025A
DWGS10-025C
DWGS20-025A
DWGS20-025C
250
3.9
7.8
9.0
14.0
13.0
20.0
10.12
10.12
5.20
5.20
3.70
3.70
1.30
1.26
1.25
1.26
1.25
1.24
1.30
1.05
1.25
1.07
1.25
1.10
2.0
4.0
5.0
10.0
7.5
20.0
700
< 10
1300
< 10
2000
< 10
6.4
6.4
18.0
18.0
26.0
26.0
12.5
32.0
30.0
80.0
50.0
120.0
DWGS04-03A
DWGS04-03C
DWGS10-03A
DWGS10-03C
DWGS20-03C
300
3.5
6.0
8.0
17.5
25.0
10.12
10.12
5.20
5.20
3.70
1.60
1,56
1.60
1.56
1,56
1.60
1,10
1.60
1.11
1,14
2.0
4.0
5.0
10.0
20.0
700
< 10
1300
10
15
3.7
3.7
9.0
9.0
14.0
12.5
32.0
30.0
80.0
120.0
© 2004 IXYS All rights reserved
26
Chip-Shortform2004.pmd
bondable
27
solderable
GaAs Schottky Diodes
C hips
pe r
W a fe r
D im e ns ions
A
mm
B
mm
26.10.2004, 12:44
D W GS 0 4 -0 1 A
D W GS 1 0 -0 1 C
•
•
4060
2126
1 .3 0
2 .1 0
1 .3 0
1 .6 0
D W GS 0 4 -0 1 8 A
D W GS 0 4 -0 1 8 C
D W GS 1 0 -0 1 8 A
D W GS 1 0 -0 1 8 C
D W GS 2 0 -0 1 8 A
D W GS 2 0 -0 1 8 C
•
•
•
•
•
•
4060
4060
2126
2126
1480
1480
1 .3 0
1 .3 0
2 .1 0
2 .1 0
3 .0 0
3 .0 0
1 .3 0
1 .3 0
1 .6 0
1 .6 0
1 .6 0
1 .6 0
D W GS 0 4 -0 2 5 A
D W GS 0 4 -0 2 5 C
D W GS 1 0 -0 2 5 A
D W GS 1 0 -0 2 5 C
D W GS 2 0 -0 2 5 A
D W GS 2 0 -0 2 5 C
•
•
•
•
•
•
4060
4060
2126
2126
1480
1480
1 .3 0
1 .3 0
2 .1 0
2 .1 0
3 .0 0
3 .0 0
1 .3 0
1 .3 0
1 .6 0
1 .6 0
1 .6 0
1 .6 0
D W GS 0 4 -0 3 A
D W GS 0 4 -0 3 C
D W GS 1 0 -0 3 A
D W GS 1 0 -0 3 C
D W GS 2 0 -0 3 C
•
•
•
•
•
4060
4060
2126
2126
1480
1 .3 0
1 .3 0
2 .1 0
2 .1 0
3 .0 0
1 .3 0
1 .3 0
1 .6 0
1 .6 0
1 .6 0
-0 .1
-0 .1
Tole ra nc e
© 2004 IXYS All rights reserved
27
Chip-Shortform2004.pmd
Schottky Diodes
V
IR
VRRM
125°C
1)
= 100°C
mA
DWS 39-08D
8
145
DWS 9-15B
DWS 19-15B
DWS 29-15B
15
tbd
65
98
DWS 7-30B
DWS 17-30B
DWS 27-30B
DWS 37-30B
DWS 217-30B
30
Type
28
DWS 3-45B
DWS 4-45A
DWS 13-45B
DWS 14-45A
DWS 23-45B
DWS 24-45A
DWS 33-45B
DWS 34-45A
VRRM
45
tbd
tbd
82
102
65
28
32
42
47
63
68
89
95
°C
IF(AV)M
rect. d = 0.5
TC = 125°C
1)
= 100°C
A
1)
150
145
1)
150
150
150
tbd
65
98
tbd
150
150
150
150
tbd
tbd
82
102
65
150
175
150
175
150
175
150
175
28
32
42
47
63
68
89
95
1)
1)
1)
1)
1)
1)
1)
1)
TVJM
RthJC 1
typ.
25°C
VF
TVJ =
A version: 150°C
B version: 125°C
V
IFSM
@IF
IRM
25°C
Reverse Recovery
@IF
@-di/dt
trr
typ.
K/W
V
A
A
A
ns
A
A/µs
1)
0.8
0.31
0.18
60
1000
tbd
tbd
50
200
1)
1.7
1.4
1.1
0.40
0.39
0.39
0.28
0.24
0.25
10
20
40
160
350
660
tbd
tbd
tbd
tbd
tbd
tbd
tbd
20
40
tbd
200
200
tbd
1.4
1.1
0.8
1.2
0.63
tbd
0.42
0.40
0.41
0.43
tbd
0.29
0.27
0.30
10
20
40
40
28
tbd
330
520
800
420
tbd
2.40
tbd
tbd
5.50
tbd
tbd
tbd
tbd
tbd
tbd
20
40
50
30
tbd
200
200
200
200
1.7
1.7
1.4
1.4
1.1
1.1
0.8
0.8
0.48
0.66
0.48
0.66
0.48
0.66
0.48
0.66
0.41
0.50
0.41
0.50
0.42
0.50
0.41
0.51
10
10
20
20
40
40
60
60
160
140
320
280
640
550
900
800
1.00
1.00
1.40
1.50
2.00
2.00
2.60
2.50
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
10
10
20
20
40
40
50
50
200
200
200
200
200
200
200
200
1)
1)
1)
1)
1)
1)
1)
1)
26.10.2004, 12:44
1 Mounted on DCB
© 2004 IXYS All rights reserved
28
Chip-Shortform2004.pmd
Schottky Diodes
DWS 39-08D
bondable
29
solderable
Type
•
Chips
per
Wafer
Dimensions
A
Sithickn.
B
mm
mm
mm
343
5.40
5.40
0.25/0.43
26.10.2004, 12:44
DWS 9-15B
DWS 19-15B
DWS 29-15B
•
•
•
1886
990
515
2.40
3.25
4.45
2.40
3.25
4.45
0.25/0.43
DWS 7-30B
DWS 17-30B
DWS 27-30B
DWS 37-30B
DWS 217-30B
•
•
•
•
•
2857
990
515
515
729
2.40
3.25
4.45
5.40
3.25
2.40
3.25
4.45
5.40
4.45
0.25
DWS 3-45B
DWS 4-45A
DWS 13-45B
DWS 14-45A
DWS 23-45B
DWS 24-45A
DWS 33-45B
DWS 34-45A
•
•
•
•
•
•
•
•
2857
1886
1515
990
757
757
515
515
2.40
2.40
3.25
3.25
4.45
4.45
5.40
5.40
2.40
2.40
3.25
3.25
4.45
4.45
5.40
5.40
-0.1
-0.1
Tolerance
•
•
•
±5%
© 2004 IXYS All rights reserved
29
Chip-Shortform2004.pmd
Schottky Diodes
Type
IR
VRRM
125°C
VRRM
1)
30
V
= 100°C
mA
tbd
43
63
82
TVJM
IF(AV)M
rect. d = 0.5
TC = 125°C
1)
RthJC 1
typ.
25°C
VF
TVJ =
150°C
IFSM
@IF
IRM
25°C
Reverse Recovery
@IF
@-di/dt
trr
typ.
°C
= 100°C
A
K/W
V
A
A
A
ns
A
A/µs
175
150
150
150
tbd
43
63
82
1.7
1.4
1.1
0.8
tbd
0.60
0.59
0.53
tbd
0.60
0.50
0.48
10
20
40
60
170
320
660
900
tbd
tbd
tbd
2.50
tbd
tbd
tbd
tbd
tbd
20
40
50
tbd
200
200
200
150
175
66
91
1.1
0.8
0.70
0.74
0.55
0.58
40
60
660
700
1.50
2.00
tbd
tbd
40
50
200
200
V
DWS 5-60A
DWS 15-60B
DWS 25-60B
DWS 35-60B
60
DWS 25-80B
DWS 36-80A
80
66
91
DWS 2-100A
DWS 12-100A
DWS 22-100A
DWS 32-100A
100
32
45
65
92
175
175
175
175
32
45
65
92
1.7
1.4
1.1
0.8
0.77
0.78
0.78
0.77
0.57
0.57
0.58
0.57
10
20
40
60
120
230
450
700
2.00
2.30
2.60
3.40
tbd
tbd
tbd
tbd
10
20
40
50
200
200
200
200
DWS 1-150A
DWS 11-150A
DWS 21-150A
DWS 31-150A
150
30
43
60
85
175
175
175
175
30
43
60
85
1.7
1.4
1.1
0.8
0.81
0.81
0.81
0.81
0.62
0.62
0.63
0.62
10
20
40
60
120
200
450
700
3.00
4.00
tbd
4.50
tbd
tbd
tbd
tbd
10
20
40
50
200
200
200
200
DWS 1-180A
180
30
175
30
1.7
0.81
0.62
10
120
3.50
tbd
10
200
DWS 30-200A
200
tbd
175
tbd
0.8
0.00
0.00
60
700
5.00
tbd
50
200
1)
1)
1)
26.10.2004, 12:44
1 Mounted on DCB
© 2004 IXYS All rights reserved
30
Chip-Shortform2004.pmd
Schottky Diodes
bondable
31
solderable
Type
Chips
per
Wafer
Dimensions
A
Sithickn.
B
26.10.2004, 12:44
mm
mm
mm
DWS 5-60A
DWS 15-60B
DWS 25-60B
DWS 35-60B
•
•
•
•
2857
990
757
515
2.40
3.25
4.45
5.40
2.40
3.25
4.45
5.40
0.25
DWS 25-80B
DWS 36-80A
•
•
515
343
4.45
5.40
4.45
5.40
DWS 2-100A
DWS 12-100A
DWS 22-100A
DWS 32-100A
•
•
•
•
1886
990
757
515
2.40
3.25
4.45
5.40
2.40
3.25
4.45
5.40
DWS 1-150A
DWS 11-150A
DWS 21-150A
DWS 31-150A
•
•
•
•
2857
1515
757
515
2.40
3.25
4.45
5.40
2.40
3.25
4.45
5.40
DWS 1-180A
•
1886
2.40
2.40
DWS 30-200A
•
515
5.40
5.40
-0.1
-0.1
Tolerance
•
±5%
© 2004 IXYS All rights reserved
31
Chip-Shortform2004.pmd
Phase Control Thyristors
Type
VDRM
VRRM
IR
VRRM
TVJ M
IT(AV)M
rect. d = 0.5
TC = 100°C
RthJC 1
VT
TVJ =
@IT
25°C 150°C
ITSM
non-rep.
tp = 10ms
K/W
V
V
A
A
1.7
1.7
1.7
0.7
1.55
1.53
1.53
1.46
1.41
1.53
1.53
1.49
20
44
44
150
200
300
300
1200
tbd
60
60
100
tbd
20
20
10
tbd
16
16
50
50
40
80
80
75
100
100
100
10
10
10
10
25
61
36
tbd
tbd
1.2
1.1
0.9
0.9
0.9
1.40
1.56
1.55
1.33
1.33
1.41
1.57
1.57
tbd
1.31
45
80
80
60
60
400
520
520
600
600
150
150
150
60
60
10
20
15
20
20
11
15
20
25
25
100
100
100
100
100
150
150
450
200
200
10
10
10
10
10
20
20
20
20
30
40
40
60
125
tbd
tbd
tbd
204
372
tbd
540
0.5
0.6
0.5
0.4
0.2
0.2
0.2
0.1
1.53
1.38
1.29
1.35
1.21
1.22
1.21
1.17
1.58
1.38
1.26
1.35
1.16
1.17
1.17
1.11
200
200
200
300
350
450
600
600
1150
1500
1900
2400
4750
5200
7000
9500
150
150
150
185
150
150
200
200
20
20
20
20
20
20
50
50
120
150
150
150
160
300
300
300
200
200
200
200
200
200
150
150
450
450
450
450
300
300
200
200
10
10
10
10
30
30
30
30
20
40
60
tbd
tbd
520
0.2
0.2
0.1
1.55
1.26
1.34
tbd
tbd
1.34
300
300
600
1700
6000
8000
185
150
200
20
20
50
150
160
300
150
150
150
200
200
200
30
30
30
1)
32
IL
IH
RGK = ∝
@tp
VD = 6 V TVJ = 25°C
TVJ = 25°C
mA
µs
ns
tq
VR = 100V, VD = 2/3 VDRM
tp = 200µs, di/dt = -10A/µs
TVJ = TVJM
µs
TVJM
26.10.2004, 12:44
V
mA
°C
= 75°C
A
CWP 7-CG
CWP 8
CWP 8-CG
CWP 35
800 1200
5
4
4
20
125
150
150
150
15
tbd
tbd
tbd
CWP 16-CG
CWP 21-CG
CWP 22-CG
CWP 24
CWP 25-CG
1200 1600 -
8
12
12
20
20
150
CWP 41
CWP 50
CWP 55
CWP 71
CWP 130
CWP 180
CWP 341
CWP 347
1200 1800
CWP 69
CWP 339
CWP 345
1600 2200
1)
max.
dv/dt
V/µs
@IT
A
1 Mounted on DCB
© 2004 IXYS All rights reserved
32
Chip-Shortform2004.pmd
Phase Control Thyristors
bondable
solderable
Type
Chips
per
Wafer
Dimensions
B
F
G
mm
mm
mm
•
•
•
•
•
518
375
375
125
4.45
5.20
5.20
8.70
4.45
5.20
5.20
8.70
1.80
1.80
1.80
0.90
0.90
1.00
0.2
0.2
-
1.1
1.1
-
1.6
1.6
-
0.38
0.38
0.32
0.38
•
•
•
•
•
•
•
•
•
•
239
196
196
196
196
6.50
7.10
7.10
7.10
7.10
6.50
7.10
7.10
7.10
7.10
1.80
-
1.00
-
0.2
0.2
0.2
0.2
1.1
1.1
1.1
1.1
1.6
1.6
1.6
1.6
0.38
0.38
0.38
0.32
0.32
CWP 41
CWP 50
CWP 55
CWP 71
CWP 130
CWP 180
CWP 341
CWP 347
•
•
•
•
•
•
•
•
•
•
•
•
•
•
94
74
58
50
29
20
16
13
10.00
13.00
12.30
13.40
19.05
20.55
25.30
23.40
10.00
9.77
12.30
13.40
15.40
17.65
18.50
23.40
2.30
2.30
2.30
2.30
3.46
3.50
3.50
3.50
1.50
1.50
1.50
1.50
2.50
2.50
2.50
2.50
-
-
-
0.38
0.38
0.38
0.38
0.38
0.38
0.38
0.38
CWP 69
CWP 339
CWP 345
•
•
•
50
16
13
13.40
18.50
23.40
13.40
25.30
23.40
2.30
3.50
3.50
1.50
2.50
2.50
-
-
-
0.46
0.46
0.46
-0.1
-0.1
-0.1
+0.1
-0.1
+0.1
+0.1
±5%
33
mm
Corner Gate
J
L
M
mm
mm
mm
CWP 7-CG
CWP 8
CWP 8-CG
CWP 35
•
•
CWP 16-CG
CWP 21-CG
CWP 22-CG
CWP 24
CWP 25-CG
26.10.2004, 12:44
Tolerance
A
Sithickn.
mm
...-CG types
© 2004 IXYS All rights reserved
33
Chip-Shortform2004.pmd
Fast Rectifier Diodes
Type
VRRM
V
34
1600 1800
DWFN 2-16/18
DWFN 9-16/18
DWFN 17-16/18
DWFP 17-16/18
DWFN 21-16/18
DWFN 35-16/18
IR
VRRM
TVJ M
typ. mA
TVJM
2
4
5
5
8
10
125
°C
IF(AV)M
rect. d = 0.5
RthJC 1
TC = 75°C
A
typ.
K/W
VF
TVJ =
25°C
125°C
V
V
10
16
17
17
23
26
2.9
1.6
1.3
1.3
0.9
0.7
1.79
1.98
1.89
2.10
1.98
1.88
tbd
tbd
tbd
tbd
tbd
tbd
IFSM
@IF
A
10
30
55
55
70
80
@IF
A
IRM
25°C
A
75
160
300
300
400
500
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
Reverse Recovery
@-di/dt
@IF
trr
typ.
µs
A
tbd
tbd
tbd
tbd
tbd
tbd
1.5
1.5
1.5
1.5
1.5
1.5
4
8
10
10
15
25
@-di/dt
A/µs
5
5
10
10
15
25
26.10.2004, 12:44
DWFN 2-16/18
DWFN 9-16/18
DWFN 17-16/18
DWFP 17-16/18
DWFN 21-16/18
DWFN 35-16/18
Tolerance
bondable
Type
solderable
1 Mounted on DCB
•
•
•
•
•
•
•
•
Chips
per
Wafer
1204
684
518
239
346
259
Dimensions
Sithickn.
A
mm
B
mm
mm
2.95
3.90
4.45
4.45
5.40
6.20
2.95
3.90
4.45
4.45
5.40
6.20
0.265
0.265
0.265
0.265
0.265
0.265
-0.1
-0.1
±5%
DWFN
DWFP
© 2004 IXYS All rights reserved
34