Intel E28F200BV-B60 2-mbit smartvoltage boot block flash memory family Datasheet

E
SEE NEW DESIGN RECOMMENDATIONS
REFERENCE ONLY
2-MBIT SmartVoltage BOOT BLOCK
FLASH MEMORY FAMILY
28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B
n
n
n
n
n
n
n
Intel SmartVoltage Technology
 5 V or 12 V Program/Erase
 3.3 V or 5 V Read Operation
Very High-Performance Read
 5 V: 60 ns Access Time
 3 V: 110 ns Access Time
Low Power Consumption
 Max 60 mA Read Current at 5 V
 Max 30 mA Read Current at
3.3 V–3.6 V
x8/x16-Selectable Input/Output Bus
 28F200 for High Performance 16- or
32-bit CPUs
x8-Only Input/Output Architecture
 28F002B for Space-Constrained
8-bit Applications
Optimized Array Blocking Architecture
 One 16-KB Protected Boot Block
 Two 8-KB Parameter Blocks
 96-KB and 128-KB Main Blocks
 Top or Bottom Boot Locations
Extended Temperature Operation
 –40 °C to +85 °C
n
n
n
n
n
n
n
n
n
Extended Block Erase Cycling
 100,000 Cycles at Commercial Temp
 10,000 Cycles at Extended Temp
Automated Word/Byte Program and
Block Erase
 Command User Interface
 Status Registers
 Erase Suspend Capability
SRAM-Compatible Write Interface
Automatic Power Savings Feature
Reset/Deep Power-Down Input
 0.2 µA ICCTypical
 Provides Reset for Boot Operations
Hardware Data Protection Feature
 Absolute Hardware-Protection for
Boot Block
 Write Lockout during Power
Transitions
Industry-Standard Surface Mount
Packaging
 40-, 48-, 56-Lead TSOP
 44-Lead PSOP
Footprint Upgradeable to 4-Mbit and
8-Mbit Boot Block Flash Memories
ETOX™ IV Flash Technology
New Design Recommendations:
For new 2.7 V–3.6 V VCC designs with this device, Intel recommends using the Smart 3 Advanced Boot
Block. Reference Smart 3 Advanced Boot Block 4-Mbit, 8-Mbit, 16-Mbit Flash Memory Family datasheet,
order number 290580.
For new 5 V VCC designs with this device, Intel recommends using the 2-Mbit Smart 5 Boot Block. Reference
Smart 5 Flash Memory Family 2, 4, 8 Mbit datasheet, order number 290599.
These documents are also available at Intel’s website, http://www.intel.com/design/flcomp.
December 1997
Order Number: 290531-005
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B may contain design defects or errors known as errata. Current
characterized errata are available on request.
*Third-party brands and names are the property of their respective owners.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 5937
Denver, CO 8021-9808
or call 1-800-548-4725
or visit Intel’s website at http://www.intel.com
COPYRIGHT © INTEL CORPORATION, 1997
*Third-party brands and names are the property of their respective owners..
CG-041493
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
CONTENTS
PAGE
1.0 PRODUCT FAMILY OVERVIEW.....................5
1.1 New Features in the SmartVoltage Products 5
1.2 Main Features ..............................................5
1.3 Applications..................................................6
1.4 Pinouts.........................................................7
1.5 Pin Descriptions .........................................11
2.0 PRODUCT DESCRIPTION............................13
2.1 Memory Blocking Organization...................13
2.1.1 One 16-KB Boot Block.........................13
2.1.2 Two 8-KB Parameter Blocks................13
2.1.3 One 96-KB + One 128-KB Main Block.13
3.0 PRODUCT FAMILY PRINCIPLES OF
OPERATION ................................................15
3.1 Bus Operations ..........................................15
3.2 Read Operations ........................................15
3.2.1 Read Array ..........................................15
3.2.2 Intelligent Identifiers ............................17
3.3 Write Operations ........................................17
3.3.1 Command User Interface (CUI) ...........17
3.3.2 Status Register....................................20
3.3.3 Program Mode.....................................21
3.3.4 Erase Mode .........................................21
3.4 Boot Block Locking ....................................22
3.4.1 VPP = VIL for Complete Protection .......22
3.4.2 WP# = VIL for Boot Block Locking .......22
3.4.3 RP# = VHH or WP# = VIH for Boot Block
Unlocking ...........................................22
3.4.4 Upgrade Note for 8-Mbit 44-PSOP
Package .............................................22
3.5 Power Consumption...................................26
3.5.1 Active Power .......................................26
3.5.2 Automatic Power Savings (APS) .........26
3.5.3 Standby Power ....................................26
3.5.4 Deep Power-Down Mode.....................26
PAGE
3.6 Power-Up/Down Operation.........................26
3.6.1 RP# Connected To System Reset .......26
3.6.2 VCC, VPP AND RP# Transitions............27
3.7 Power Supply Decoupling ..........................27
3.7.1 VPP Trace On Printed Circuit Boards ..27
4.0 ELECTRICAL SPECIFICATIONS..................28
4.1 Absolute Maximum Ratings ........................28
4.2 Commercial Operating Conditions ..............28
4.2.1 Applying VCC Voltages.........................29
4.3 Capacitance ...............................................29
4.4 DC Characteristics—Commercial ...............30
4.5 AC Characteristics—Commercial ...............34
4.6 AC Characteristics—WE#-Controlled Write
Operations—Commercial ..........................37
4.7 AC Characteristics—CE#-Controlled Write
Operations—Commercial ..........................40
4.8 Erase and Program Timings—Commercial.43
4.9 Extended Operating Conditions..................43
4.9.1 Applying VCC Voltages.........................44
4.10 Capacitance .............................................44
4.11 DC Characteristics—Extended
Temperature Operations............................45
4.12 AC Characteristics—Read Only
Operations—Extended Temperature .........49
4.13 AC Characteristics—WE#-Controlled Write
Operations— Extended Temperature ........50
4.14 AC Characteristics—CE#-Controlled Write
Operations— Extended Temperature ........52
4.15 Erase and Program Timings—Extended
Temperature..............................................53
5.0 ORDERING INFORMATION..........................54
6.0 ADDITIONAL INFORMATION .......................55
Related Intel Information ..................................55
SEE NEW DESIGN RECOMMENDATIONS
3
2-MBIT SmartVoltage BOOT BLOCK FAMILY
REVISION HISTORY
Number
E
Description
-001
Initial release of datasheet.
-002
Status changed from Product Preview to Preliminary
28F200CV/CE/BE references and information added throughout.
2.7 V CE/BE specs added throughout.
The following sections have been changed or rewritten: 1.1, 3.0, 3.2.1, 3.2.2, 3.3.1,
3.3.1.1, 3.3.2, 3.3.2.1, 3.3.3, 3.3.4, 3.6.2.
Note 2 added to Figure 3 to clarify 28F008B pinout vs. 28F008SA.
Sentence about program and erase WSM timeout deleted from Section 3.3.3, 3.3.4.
Erroneous arrows leading out of error states deleted from flowcharts in Figs. 9, 10.
Sections 5.1, 6.1 changed to “Applying VCC Voltages.” These sections completely
changed to clarify VCC ramp requirements.
IPPD 3.3 V Commercial spec changed from 10 to 5 µA.
Capacitance tables added after commercial and extended DC Characteristics tables.
Test and slew rate notes added to Figs. 12, 13, 19, 20, 21.
Test configuration drawings (Fig. 14, 22) consolidated into one, with component
values in table. (Component values also rounded off).
tELFL, tELFH, tAVFL changed from 7 to 5 ns for 3.3 V BV-60 commercial and 3.3 V
TBV-80 extended, 10 to 5 ns for 3.3 V BV-80 and BV-120 commercial.
tWHAX and tEHAX changed from 10 to 0 ns.
tPHWL changed from 1000 ns to 800 ns for 3.3 V BV-80, BV-120 commercial.
tPHEL changed from 1000 ns to 800 ns for 3.3 V BV-60, BV-80, and BV-120 commercial.
-003
Applying VCC voltages (Sections 5.1 and 6.1) rewritten for clarity.
Minor cosmetic changes/edits.
-004
Corrections: “This pin not available on 44-PSOP” inaccurate statement removed from pin
description for WP# pin; Spec “tQWL” corrected to “tQVVL;” intelligent identifier values
corrected; Intel386™ EX block diagram updated because new 386 specs require less
glue logic.
Max program times for parameter and 96-KB main block added.
Specs tELFL and tELFH changed from 5 ns (max) to 0 ns (min).
Specs tEHQZ and tHQZ improved.
New specs tPLPH and tPLQZ added from Specification Update document (297612).
-005
Corrections: Figure 4, corrected pin designation 3 to “NC” from A17 on PA28F200.
Corrected typographical errors in Ordering Information.
Added New Design Recommendations section to cover page.
Updated Erase Suspend/Resume Flowchart
4
SEE NEW DESIGN RECOMMENDATIONS
E
1.0
2-MBIT SmartVoltage BOOT BLOCK FAMILY
•
PRODUCT FAMILY OVERVIEW
This datasheet contains the specifications for the
two branches of products in the SmartVoltage
2-Mbit boot block flash memory family. These
-BV/CV suffix products offer 3.0 V–3.6 V operation
and also operate at 5 V for high-speed access
times. Throughout this datasheet, the 28F200
refers to all x8/x16 2-Mbit products, while
28F002B refers to all x8 2-Mbit boot block
products. Section 1.0 provides an overview of the
flash memory family including applications, pinouts
and pin descriptions. Sections 2.0 and 3.0
describe the memory organization and operation
for these products. Section 4.0 contains the
family’s operating specifications. Finally, Sections
5.0 and 6.0 provide ordering and document
reference information.
1.1
If you are using BX/BL 12 V VPP boot block
products today, you should account for the
differences listed above and also allow for
connecting 5 V to VPP and disconnecting 12 V
from VPP line, if 5 V writes are desired.
1.2
The SmartVoltage boot block flash memory family
offers identical operation with the BX/BL 12 V
program products, except for the differences listed
below. All other functions are equivalent to current
products, including signatures, write commands,
and pinouts.
WP# pin has replaced a DU (Don’t Use) pin.
Connect the WP# pin to control signal or to
VCC or GND (in this case, a logic-level signal
can be placed on DU pin). Refer to Tables 2
and 9 to see how the WP# pin works.
•
5 V program/erase operation has been added.
If switching VPP for write protection, switch to
GND (not 5 V) for complete write protection.
To take advantage of 5 V write-capability,
allow for connecting 5 V to VPP and
disconnecting 12 V from VPP line.
Main Features
Intel’s SmartVoltage technology is the most
flexible voltage solution in the flash industry,
providing two discrete voltage supply pins: VCC for
read operation, and VPP for program and erase
operation. Discrete supply pins allow system
designers to use the optimal voltage levels for
their design. This product family, specifically the
28F200BV/CV, and 28F002BV provide program/
erase capability at 5 V or 12 V. The 28F200BV/CV
and 28F002BV allow reads with VCC at 3.3 V ±
0.3 V or 5 V. Since many designs read from the
flash memory a large percentage of the time, read
operation using the 3.3 V ranges can provide great
power savings. If read performance is an issue,
however, 5 V VCC provides faster read access
times.
New Features in the
SmartVoltage Products
•
Enhanced
circuits
optimize
low
VCC
performance, allowing operation down to
VCC = 3.0 V.
For program and erase operations, 5 V VPP
operation eliminates the need for in system
voltage converters, while 12 V VPP operation
provides faster program and erase for situations
where 12 V is available, such as manufacturing or
designs where 12 V is in-system. For design
simplicity, however, just hook up VCC and VPP to
the same 5 V ± 10% source.
The 28F200/28F002B boot block flash memory
family is a high-performance, 2-Mbit (2,097,152
bit) flash memory family organized as either
256 Kwords of 16 bits each (28F200 only) or
512 Kbytes of 8 bits each (28F200 and 28F002B).
Table 1. SmartVoltage Provides Total Voltage Flexibility
Product
Bus
VCC
VPP
Name
Width
3.3 V ± 0.3 V
5 V ± 5%
5 V ± 10%
5 V ± 10%
12 V ± 5%
28F002BV-T/B
x8
√
√
√
√
28F200BV-T/B
x8 or x16
√
√
√
√
28F200CV-T/B
x8 or x16
√
√
√
√
SEE NEW DESIGN RECOMMENDATIONS
5
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
Separately erasable blocks, including a hardwarelockable boot block (16,384 bytes), two parameter
blocks (8,192 bytes each) and main blocks (one
block of 98,304 bytes and one block of 131,072
bytes), define the boot block flash family
architecture. See Figures 7 and 8 for memory
maps. Each block can be independently erased and
programmed 100,000 times at commercial
temperature or 10,000 times at extended
temperature.
The boot block is located at either the top (denoted
by -T suffix) or the bottom (-B suffix) of the address
map in order to accommodate different
microprocessor protocols for boot code location.
The hardware-lockable boot block provides
complete code security for the kernel code required
for system initialization. Locking and unlocking of
the boot block is controlled by WP# and/or RP#
(see Section 3.4 for details).
The Command User Interface (CUI) serves as the
interface
between
the
microprocessor
or
microcontroller and the internal operation of the
boot block flash memory products. The internal
Write State Machine (WSM) automatically executes
the algorithms and timings necessary for program
and erase operations, including verifications,
thereby unburdening the microprocessor or
microcontroller of these tasks. The Status Register
(SR) indicates the status of the WSM and whether it
successfully completed the desired program or
erase operation.
Program and Erase Automation allows program and
erase operations to be executed using an industrystandard two-write command sequence to the CUI.
Data programming is performed in word (28F200
family) or byte (28F200 or 28F002B families)
increments. Each byte or word in the flash memory
can be programmed independently of other memory
locations, unlike erases, which erase all locations
within a block simultaneously.
The 2-Mbit SmartVoltage boot block flash memory
family is also designed with an Automatic Power
Savings (APS) feature which minimizes system
battery current drain, allowing for very low power
designs. To provide even greater power savings,
the boot block family includes a deep power-down
mode which minimizes power consumption by
turning most of the flash memory’s circuitry off. This
mode is controlled by the RP# pin and its usage is
discussed in Section 3.5, along with other power
consumption issues.
6
Additionally, the RP# pin provides protection
against unwanted command writes due to invalid
system bus conditions that may occur during
system reset and power-up/down sequences. For
example, when the flash memory powers-up, it
automatically defaults to the read array mode, but
during a warm system reset, where power
continues uninterrupted to the system components,
the flash memory could remain in a non-read mode,
such as erase. Consequently, the system Reset
signal should be tied to RP# to reset the memory to
normal read mode upon activation of the Reset
signal. See Section 3.6.
The 28F200 provides both byte-wide or word-wide
input/output, which is controlled by the BYTE# pin.
Please see Table 2 and Figure 16 for a detailed
description of BYTE# operations, especially the
usage of the DQ15/A–1 pin.
The 28F200 products are available in a
ROM/EPROM-compatible pinout and housed in the
44-lead PSOP (Plastic Small Outline) package, the
48-lead TSOP (Thin Small Outline, 1.2 mm thick)
package and the 56-lead TSOP as shown in
Figures 4, 5 and 6, respectively. The 28F002
products are available in the 40-lead TSOP
package as shown in Figure 3.
Refer to the DC Characteristics, Section 4.4
(commercial temperature) and Section 4.11
(extended temperature), for complete current and
voltage specifications. Refer to the AC
Characteristics,
Section
4.5
(commercial
temperature) and Section 4.12 (extended
temperature), for read, write and erase performance
specifications.
1.3
Applications
The 2-Mbit boot block flash memory family
combines
high-density,
low-power,
highperformance, cost-effective flash memories with
blocking and hardware protection capabilities. Their
flexibility and versatility reduce costs throughout the
product life cycle. Flash memory is ideal for Just-InTime production flow, reducing system inventory
and costs, and eliminating component handling
during the production phase.
When your product is in the end-user’s hands, and
updates or feature enhancements become
necessary, flash memory reduces the update costs
by allowing user-performed code changes instead
of costly product returns or technician calls.
SEE NEW DESIGN RECOMMENDATIONS
E
The 2-Mbit boot block flash memory family provides
full-function, blocked flash memories suitable for a
wide range of applications. These applications
include extended PC BIOS and ROM-able
applications storage, digital cellular phone program
and data storage, telecommunication boot/firmware,
printer firmware/font storage and various other
embedded applications where program and data
storage are required.
Reprogrammable systems, such as personal
computers, are ideal applications for the 2-Mbit
flash memory products. Increasing software
sophistication greatens the probability that a code
update will be required after the PC is shipped. For
example, the emerging of “plug and play” standard
in desktop and portable PCs enables autoconfiguration of ISA and PCI add-in cards.
However, since the plug and play specification
continues to evolve, a flash BIOS provides a costeffective capability to update existing PCs. In
addition, the parameter blocks are ideal for storing
the
required
auto-configuration
parameters,
allowing you to integrate the BIOS PROM and
parameter storage EEPROM into a single
component, reducing parts costs while increasing
functionality.
The 2-Mbit flash memory products are also
excellent design solutions for digital cellular phone
and telecommunication switching applications
requiring very low power consumption, highperformance, high-density storage capability,
modular software designs, and a small form factor
package. The 2-Mbit’s blocking scheme allows for
easy segmentation of the embedded code with
16 Kbytes of hardware-protected boot code, four
2-MBIT SmartVoltage BOOT BLOCK FAMILY
main blocks of program code and two parameter
blocks of 8 Kbytes each for frequently updated data
storage and diagnostic messages (e.g., phone
numbers, authorization codes).
Intel’s boot block architecture provides a flexible
voltage solution for the different design needs of
various applications. The asymmetrically-blocked
memory map allows the integration of several
memory components into a single flash device. The
boot block provides a secure boot PROM; the
parameter
blocks
can
emulate
EEPROM
functionality for parameter store with proper
software techniques; and the main blocks provide
code and data storage with access times fast
enough to execute code in place, decreasing RAM
requirements.
1.4
Pinouts
Intel’s SmartVoltage Boot Block architecture
provides upgrade paths in every package pinout to
the 4 or 8-Mbit density. The 28F002B 40-lead
TSOP pinout for space-constrained designs is
shown in Figure 3. The 28F200 44-lead PSOP
pinout follows the industry-standard ROM/EPROM
pinout, as shown in Figure 4. For designs that
require x16 operation but have space concerns,
refer to the 48-lead pinout in Figure 5. Furthermore,
the 28F200 56-lead TSOP pinout shown in Figure 6
provides compatibility with BX/BL family product
packages.
Pinouts for the corresponding 4-Mbit and 8-Mbit
components are also provided for convenient
reference. 2-Mbit pinouts are given on the chip
illustration in the center, with 4-Mbit and 8-Mbit
pinouts going outward from the center.
SEE NEW DESIGN RECOMMENDATIONS
7
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
A[17:1]
A[16:0]
CS#
CE#
RD#
OE#
WR#
WE#
i386™ EX CPU
(25 MHz)
28F200BV-60
D[15:0]
D[15:0]
RESET
RP#
RESET
NOTE:
A data bus buffer may be needed for processor speeds above 25 MHz.
0530_01
Figure 1. 28F200 Interface to Intel386™ EX Microprocessor
A[16:17]
ADDRESS
LATCHES
LE
A8-A15
A0 -A17
80C188EB
ALE
AD0-AD7
28F002-T
ADDRESS
LATCHES
LE
DQ0 -DQ7
UCS#
VCC
CE#
10K Ω
WR#
RD#
RESIN#
System Reset
VCC
WE#
OE#
RP#
P1.X
VPP
P1.X
WP#
0530_02
Figure 2. 28F002B Interface to Intel80C188EB 8-Bit Embedded Microprocessor
8
SEE NEW DESIGN RECOMMENDATIONS
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
28F008B 28F004B
A16
A15
A14
A13
A12
A11
A9
A8
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
VPP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
WE#
RP#
VPP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
28F004B 28F008B
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
VPP
WP#
NC
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
28F002B
Boot Block
40-Lead TSOP
10 mm x 20 mm
TOP VIEW
A17
A17
A17
GND
NC
NC
A10
DQ7
DQ6
DQ5
DQ4
VCC
GND
NC
NC
A10
DQ7
DQ6
DQ5
DQ4
VCC
GND
NC
A 19
NC
NC
NC
VCC
A10
DQ7
DQ6
DQ5
DQ4
VCC
VCC
VCC
DQ3
DQ2
DQ1
DQ0
DQ3
DQ2
DQ1
DQ0
DQ3
DQ2
DQ1
DQ0
A0
A0
A0
OE#
GND
CE#
OE#
GND
CE#
OE#
GND
CE#
0530_03
Figure 3. The 40-Lead TSOP Offers the Smallest Form Factor for Space-Constrained Applications
28F800
VPP
A 18
A 17
28F400
28F800
RP#
WE#
RP#
WE#
RP#
WE#
A8
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
A8
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
A8
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
BYTE#
GND
BYTE#
GND
DQ15/A-1
DQ 7
DQ 14
DQ 6
DQ 13
DQ 5
DQ 12
DQ 4
VCC
DQ15/A-1
DQ 7
DQ 14
DQ 6
DQ 13
DQ 5
DQ 12
DQ 4
VCC
28F400
VPP
V PP
WP#
WP#
NC
A7
A6
A5
A4
A3
A2
A1
A0
A 17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
GND
OE#
CE#
GND
OE#
CE#
GND
OE#
DQ 0
DQ 8
DQ 1
DQ 9
DQ 2
DQ 10
DQ 3
DQ 11
DQ 0
DQ 8
DQ 1
DQ 9
DQ 2
DQ 10
DQ 3
DQ 11
DQ 0
DQ 8
DQ 1
DQ 9
DQ 2
DQ 10
DQ 3
DQ 11
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PA28F200
BOOT BLOCK
44-Lead PSOP
0.525" x 1.110"
TOP VIEW
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BYTE#
GND
DQ15/A-1
DQ 7
DQ 14
DQ 6
DQ 13
DQ 5
DQ 12
DQ 4
VCC
0530_04
NOTE: Pin 2 is WP# on 2- and 4-Mbit devices but A18 on the 8-Mbit because no other pins were available for the high order
address. Thus, the 8-Mbit in the 44-lead PSOP cannot unlock the boot block without RP# = VHH (12 V). To allow upgrades to
the 8 Mbit from 2/2 Mbit in this package, design pin 2 to control WP# at the 2/4 Mbit level and A18 at the 8-Mbit density. See
Section 3.4 for details.
Figure 4. The 44-Lead PSOP Offers a Convenient Upgrade from JEDEC ROM Standards
SEE NEW DESIGN RECOMMENDATIONS
9
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
28F800 28F400
28F400
A15
A14
A13
A12
A11
A10
A9
A8
A15
A14
A13
A12
A11
A10
A9
A8
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
NC
NC
WE#
RP#
NC
NC
WE#
RP#
VPP
VPP
VPP
WP#
NC
WP#
NC
NC
WP#
NC
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A17
A7
A6
A5
A4
A3
A2
A
A7
A6
A5
A4
A3
A2
A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
28F200
Boot Block
48-Lead TSOP
12 mm x 20 mm
TOP VIEW
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
28F800
A16
A16
BYTE#
BYTE#
GND
GND
/A
DQ15 -1 DQ15/A-1
DQ7
DQ7
DQ14
DQ14
DQ6
DQ6
DQ13
DQ13
DQ5
DQ5
DQ12
DQ12
DQ 4
DQ 4
BYTE#
GND
DQ15 /A -1
OE#
GND
CE#
OE#
GND
CE#
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
A0
A0
OE#
GND
CE#
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ 4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
A0
0530_05
Figure 5. The 48-Lead TSOP Offers the Smallest Form Factor for x16 Operation
28F400
NC
NC
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
NC
NC
VPP
WP#
NC
A 17
A7
A6
A5
A4
A3
A2
A1
NC
28F400
NC
NC
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
NC
NC
VPP
WP#
NC
NC
A7
A6
A5
A4
A3
A2
A1
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
28F200
Boot Block
56-Lead TSOP
14 mm x 20 mm
TOP VIEW
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
NC
A16
BYTE#
GND
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
GND
CE#
A0
NC
NC
NC
A16
BYTE#
GND
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
GND
CE#
A0
NC
NC
0530_06
Figure 6. The 56-Lead TSOP Offers Compatibility between 2 and 4 Mbits
10
SEE NEW DESIGN RECOMMENDATIONS
E
1.5
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Pin Descriptions
Table 2. 28F200/002 Pin Descriptions
Symbol
Type
Name and Function
A0–A17
INPUT
ADDRESS INPUTS for memory addresses. Addresses are internally latched
during a write cycle. The 28F200 only has A0– A16 pins, while
the 28F002B has A0– A17.
A9
INPUT
ADDRESS INPUT: When A9 is at V HH the signature mode is accessed. During
this mode, A0 decodes between the manufacturer and device IDs. When BYTE#
is at a logic low, only the lower byte of the signatures are read. DQ 15/A–1 is a
don’t care in the signature mode when BYTE# is low.
DQ0–DQ7
INPUT/ DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle
OUTPUT during a Program command. Inputs commands to the Command User Interface
when CE# and WE# are active. Data is internally latched during the write cycle.
Outputs array, Intelligent Identifier and status register data. The data pins float to
tri-state when the chip is de-selected or the outputs are disabled.
DQ8–DQ15
INPUT/ DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle
OUTPUT during a Program command. Data is internally latched during the write cycle.
Outputs array data. The data pins float to tri-state when the chip is de-selected or
the outputs are disabled as in the byte-wide mode (BYTE# = “0”). In the byte-wide
mode DQ15/A–1 becomes the lowest order address for data output on DQ0–DQ7.
The 28F002B does not include these DQ8–DQ15 pins.
CE#
INPUT
CHIP ENABLE: Activates the device’s control logic, input buffers, decoders and
sense amplifiers. CE# is active low. CE# high de-selects the memory device and
reduces power consumption to standby levels. If CE# and RP# are high, but not
at a CMOS high level, the standby current will increase due to current flow
through the CE# and RP# input stages.
OE#
INPUT
OUTPUT ENABLE: Enables the device’s outputs through the data buffers during
a read cycle. OE# is active low.
WE#
INPUT
WRITE ENABLE: Controls writes to the Command Register and array blocks.
WE# is active low. Addresses and data are latched on the rising edge of the WE#
pulse.
RP#
INPUT
RESET/DEEP POWER-DOWN: Uses three voltage levels (V IL, VIH, and VHH) to
control two different functions: reset/deep power-down mode and boot block
unlocking. It is backwards-compatible with the BX/BL/BV products.
When RP# is at logic low, the device is in reset/deep power-down mode,
which puts the outputs at High-Z, resets the Write State Machine, and draws
minimum current.
When RP# is at logic high, the device is in standard operation. When RP#
transitions from logic-low to logic-high, the device defaults to the read array mode.
When RP# is at VHH, the boot block is unlocked and can be programmed or
erased. This overrides any control from the WP# input.
SEE NEW DESIGN RECOMMENDATIONS
11
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Table 2. 28F200/002 Pin Descriptions
Symbol
WP#
Type
INPUT
E
Name and Function
WRITE PROTECT: Provides a method for unlocking the boot block in a system
without a 12 V supply.
When WP# is at logic low, the boot block is locked, preventing program and
erase operations to the boot block. If a program or erase operation is attempted
on the boot block when WP# is low, the corresponding status bit (bit 4 for
program, bit 5 for erase) will be set in the status register to indicate the operation
failed.
When WP# is at logic high, the boot block is unlocked and can be
programmed or erased.
NOTE: This feature is overridden and the boot block unlocked when RP# is at
VHH. See Section 3.4 for details on write protection.
BYTE#
INPUT
BYTE# ENABLE: Not available on 28F002B. Controls whether the device
operates in the byte-wide mode (x8) or the word-wide mode (x16). BYTE# pin
must be controlled at CMOS levels to meet the CMOS current specification in the
standby mode.
When BYTE# is at logic low, the byte-wide mode is enabled, where data is
read and programmed on DQ0–DQ7 and DQ15/A–1 becomes the lowest order
address that decodes between the upper and lower byte. DQ8–DQ14 are tri-stated
during the byte-wide mode.
When BYTE# is at logic high, the word-wide mode is enabled, where data is
read and programmed on DQ0–DQ15.
VCC
DEVICE POWER SUPPLY: 5.0 V ± 10%, 3.3 V ± 0.3 V, 2.7 V–3.6 V (BE/CE
only)
VPP
PROGRAM/ERASE POWER SUPPLY: For erasing memory array blocks or
programming data in each block, a voltage either of 5 V ± 10% or 12 V ± 5% must
be applied to this pin. When VPP < VPPLK all blocks are locked and protected
against Program and Erase commands.
GND
GROUND: For all internal circuitry.
NC
NO CONNECT: Pin may be driven or left floating.
12
SEE NEW DESIGN RECOMMENDATIONS
E
2.0
2.1
PRODUCT DESCRIPTION
Memory Blocking Organization
This product family features an asymmetricallyblocked architecture providing system memory
integration. Each erase block can be erased
independently of the others up to 100,000 times for
commercial temperature or up to 10,000 times for
extended temperature. The block sizes have been
chosen to optimize their functionality for common
applications of nonvolatile storage. The combination
of block sizes in the boot block architecture allow
the integration of several memories into a single
chip. For the address locations of the blocks, see
the memory maps in Figures 4 and 5.
2.1.1
ONE 16-KB BOOT BLOCK
The boot block is intended to replace a dedicated
boot PROM in a microprocessor or microcontrollerbased system. The 16-Kbyte (16,384 bytes) boot
block is located at either the top (denoted by -T
suffix) or the bottom (-B suffix) of the address map
to accommodate different microprocessor protocols
for boot code location. This boot block features
hardware controllable write-protection to protect the
crucial microprocessor boot code from accidental
modification. The protection of the boot block is
controlled using a combination of the VPP, RP#, and
WP# pins, as is detailed in Section 3.4.
2-MBIT SmartVoltage BOOT BLOCK FAMILY
2.1.2
TWO 8-KB PARAMETER BLOCKS
The boot block architecture includes parameter
blocks to facilitate storage of frequently updated
small parameters that would normally require an
EEPROM. By using software techniques, the byterewrite functionality of EEPROMs can be emulated.
These techniques are detailed in Intel’s application
note AP-604, Using Intel’s Boot Block Flash
Memory Parameter Blocks to Replace EEPROM.
Each boot block component contains two parameter
blocks of 8 Kbytes (8,192 bytes) each. The
parameter blocks are not write-protectable.
2.1.3
ONE 96-KB + ONE 128-KB MAIN
BLOCK
After the allocation of address space to the boot
and parameter blocks, the remainder is divided into
main blocks for data or code storage. Each 2-Mbit
device contains one 96-Kbyte (98,304 byte) block
and one 128-Kbyte (131,072 byte) block. See the
memory maps for each device for more information.
SEE NEW DESIGN RECOMMENDATIONS
13
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
28F200-T
1FFFFH
16-Kbyte BOOT BLOCK
1E000H
1DFFFH
1D000H
1CFFFH
1C000H
1BFFFH
8-Kbyte PARAMETER BLOCK
28F200-B
1FFFFH
128-Kbyte MAIN BLOCK
10000H
0FFFFH
96-Kbyte MAIN BLOCK
8-Kbyte PARAMETER BLOCK
96-Kbyte MAIN BLOCK
10000H
0FFFFH
128-Kbyte MAIN BLOCK
00000H
04000H
03FFFH
03000H
02FFFH
02000H
01FFFH
8-Kbyte PARAMETER BLOCK
8-Kbyte PARAMETER BLOCK
16-Kbyte BOOT BLOCK
00000H
0530_07
NOTE: In x8 operation, the least significant system address should be connected to A-1. Memory maps are shown for x16
operation.
Figure 7. Word-Wide x16-Mode Memory Maps
28F002-T
3FFFFH
3C000H
3BFFFH
3A000H
39FFFH
38000H
37FFFH
16-Kbyte BOOT BLOCK
8-Kbyte PARAMETER BLOCK
3FFFFH
128-Kbyte MAIN BLOCK
20000H
1FFFFH
96-Kbyte MAIN BLOCK
8-Kbyte PARAMETER BLOCK
96-Kbyte MAIN BLOCK
20000H
1FFFFH
128-Kbyte MAIN BLOCK
00000H
28F002-B
08000H
07FFFH
06000H
05FFFH
04000H
03FFFH
8-Kbyte PARAMETER BLOCK
8-Kbyte PARAMETER BLOCK
16-Kbyte BOOT BLOCK
00000H
0530_08
NOTE: These memory maps apply to the 28F002B or the 28F200 in x8 mode.
Figure 8. Byte-Wide x8-Mode Memory Maps
14
SEE NEW DESIGN RECOMMENDATIONS
E
3.0
PRODUCT FAMILY PRINCIPLES
OF OPERATION
2-MBIT SmartVoltage BOOT BLOCK FAMILY
3.2
Read Operations
3.2.1
READ ARRAY
Flash memory combines EPROM functionality with
in-circuit electrical program and erase. The boot
block flash family utilizes a Command User
Interface (CUI) and automated algorithms to
simplify program and erase operations. The CUI
allows for 100% TTL-level control inputs, fixed
power supplies during erasure and programming,
and maximum EPROM compatibility.
When RP# transitions from VIL (reset) to VIH, the
device will be in the read array mode and will
respond to the read control inputs (CE#, address
inputs, and OE#) without any commands being
written to the CUI.
When VPP < VPPLK, the device will only successfully
execute the following commands: Read Array,
Read Status Register, Clear Status Register and
intelligent identifier mode. The device provides
standard EPROM read, standby and output disable
operations. Manufacturer identification and device
identification data can be accessed through the CUI
or through the standard EPROM A9 high voltage
access (VID) for PROM programming equipment.
•
RP# must be logic high (VIH)
•
WE# must be logic high (VIH)
•
BYTE# must be logic high or logic low
•
CE# must be logic low (VIL)
•
OE must be logic low (V IL)
The same EPROM read, standby and output
disable functions are available when 5 V or 12 V is
applied to the VPP pin. In addition, 5 V or 12 V on
VPP allows program and erase of the device. All
functions associated with altering memory contents:
Program and Erase, Intelligent Identifier Read, and
Read Status are accessed via the CUI.
The internal Write State Machine (WSM) completely
automates program and erase, beginning operation
signaled by the CUI and reporting status through
the status register. The CUI handles the WE#
interface to the data and address latches, as well
as system status requests during WSM operation.
3.1
When the device is in the read array mode, five
control signals must be controlled to obtain data at
the outputs.
In addition, the address of the desired location must
be applied to the address pins. Refer to Figures 15
and 16 for the exact sequence and timing of these
signals.
If the device is not in read array mode, as would be
the case after a program or erase operation, the
Read Mode command (FFH) must be written to the
CUI before reads can take place.
During system design, consideration should be
taken to ensure address and control inputs meet
required input slew rates of <10 ns as defined in
Figures 12 and 13.
Bus Operations
Flash memory reads, erases and programs insystem via the local CPU. All bus cycles to or from
the
flash
memory
conform
to
standard
microprocessor bus cycles. These bus operations
are summarized in Tables 3 and 4.
SEE NEW DESIGN RECOMMENDATIONS
15
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Table 3. Bus Operations for Word-Wide Mode (BYTE# = VIH)
Mode
Notes
RP#
CE#
OE#
WE#
A9
A0
VPP
DQ0–15
1,2,3
VIH
VIL
VIL
VIH
X
X
X
DOUT
Output Disable
VIH
VIL
VIH
VIH
X
X
X
High Z
Standby
VIH
VIH
X
X
X
X
X
High Z
Read
Deep Power-Down
9
VIL
X
X
X
X
X
X
High Z
Intelligent Identifier
(Mfr)
4
VIH
VIL
VIL
VIH
VID
VIL
X
0089 H
Intelligent Identifier
(Device)
4,5
VIH
VIL
VIL
VIH
VID
VIH
X
See
Table 5
6,7,8
VIH
VIL
VIH
VIL
X
X
X
DIN
Write
Table 4. Bus Operations for Byte-Wide Mode (BYTE# = VIL)
Mode
Notes
RP#
CE#
OE#
WE#
A9
A0
A–1
VPP
DQ0–7
DQ8–14
1,2,3
VIH
VIL
VIL
VIH
X
X
X
X
DOUT
High Z
Output
Disable
VIH
VIL
VIH
VIH
X
X
X
X
High Z
High Z
Standby
VIH
VIH
X
X
X
X
X
X
High Z
High Z
Read
Deep PowerDown
9
VIL
X
X
X
X
X
X
X
High Z
High Z
Intelligent
Identifier (Mfr)
4
VIH
VIL
VIL
VIH
VID
VIL
X
X
89H
High Z
4,5
VIH
VIL
VIL
VIH
VID
VIH
X
X
See
Table
5
High Z
6,7,8
VIH
VIL
VIH
VIL
X
X
X
X
DIN
High Z
Intelligent
Identifier
(Device)
Write
NOTES:
1. Refer to DC Characteristics.
2. X can be VIL, VIH for control pins and addresses, VPPLK or VPPH for VPP.
3. See DC Characteristics for VPPLK, VPPH1, VPPH2, VHH, VID voltages.
4. Manufacturer and device codes may also be accessed via a CUI write sequence, A1–A16 = X, A1–A17 = X.
5. See Table 5 for device IDs.
6. Refer to Table 7 for valid DIN during a write operation.
7. Command writes for block erase or word/byte program are only executed when VPP = VPPH1 or VPPH2.
8. To program or erase the boot block, hold RP# at VHH or WP# at VIH. See Section 3.4.
9. RP# must be at GND ± 0.2 V to meet the maximum deep power-down current specified.
16
SEE NEW DESIGN RECOMMENDATIONS
E
3.2.2
2-MBIT SmartVoltage BOOT BLOCK FAMILY
INTELLIGENT IDENTIFIERS
3.3
To read the manufacturer and device codes, the
device must be in intelligent identifier read mode,
which can be reached using two methods: by
writing the Intelligent Identifier command (90H) or
by taking the A9 pin to VID. Once in intelligent
identifier read mode, A0 = 0 outputs the manufacturer’s identification code and A0 = 1 outputs the
device code. In byte-wide mode, only the lower byte
of the above signatures is read (DQ15/A–1 is a
“don’t care” in this mode). See Table 5 for product
signatures. To return to read array mode, write a
Read Array command (FFH).
Table 5. Intelligent Identifier Table
Product
Mfr. ID
Device ID
-T
-B
(Top Boot) (Bottom Boot)
28F200
0089 H
2274 H
2275 H
28F002
89 H
7C H
7D H
3.3.1
Write Operations
COMMAND USER INTERFACE (CUI)
The Command User Interface (CUI) is the interface
between the microprocessor and the internal chip
controller. Commands are written to the CUI using
standard microprocessor write timings. The
available commands are Read Array, Read
Intelligent Identifier, Read Status Register, Clear
Status Register, Erase and Program (summarized
in Tables 6 and 7). The three read modes are read
array, intelligent identifier read, and status register
read. For Program or Erase commands, the CUI
informs the Write State Machine (WSM) that a
program or erase has been requested. During the
execution of a Program command, the WSM will
control the programming sequences and the CUI
will only respond to status reads. During an erase
cycle, the CUI will respond to status reads and
erase suspend. After the WSM has completed its
task, it will set the WSM Status bit to a “1” (ready),
which indicates that the CUI can respond to its full
command set. Note that after the WSM has
returned control to the CUI, the CUI will stay in the
current command state until it receives another
command.
3.3.1.1
Command Function Description
Device operations are selected by writing specific
commands into the CUI. Tables 6 and 7 define the
available commands.
SEE NEW DESIGN RECOMMENDATIONS
17
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Table 6. Command Codes and Descriptions
Code Device Mode
Description
00
Invalid/
Reserved
Unassigned commands that should not be used. Intel reserves the right to redefine
these codes for future functions.
FF
Read Array
Places the device in read array mode, so that array data will be output on the data
pins.
40
Program
Set-Up
Sets the CUI into a state such that the next write will latch the Address and Data
registers on the rising edge and begin the program algorithm. The device then
defaults to the read status mode, where the device outputs status register data
when OE# is enabled. To read the array, issue a Read Array command.
To cancel a program operation after issuing a Program Set-Up command, write all
1’s (FFH for x8, FFFFH for x16) to the CUI. This will return to read status register
mode after a standard program time without modifying array contents. If a program
operation has already been initiated to the WSM this command cannot cancel that
operation in progress.
10
Alternate
Prog Set-Up
20
Erase
Set-Up
D0
Erase
Resume/
Erase
Confirm
If the previous command was an Erase Set-Up command, then the CUI will latch
address and data, and begin erasing the block indicated on the address pins.
During erase, the device will respond only to the Read Status Register and Erase
Suspend commands and will output status register data when OE# is toggled low.
Status register data is updated by toggling either OE# or CE# low.
B0
Erase
Suspend
Valid only while an erase operation is in progress and will be ignored in any other
circumstance. Issuing this command will begin to suspend erase operation. The
status register will indicate when the device reaches erase suspend mode. In this
mode, the CUI will respond only to the Read Array, Read Status Register, and
Erase Resume commands and the WSM will also set the WSM Status bit to a “1”
(ready). The WSM will continue to idle in the SUSPEND state, regardless of the
state of all input control pins except RP#, which will immediately shut down the
WSM and the remainder of the chip, if it is made active. During a suspend
operation, the data and address latches will remain closed, but the address pads
are able to drive the address into the read path. See Section 3.3.4.1.
70
Read Status
Register
Puts the device into the read status register mode, so that reading the device
outputs status register data, regardless of the address presented to the device.
The device automatically enters this mode after program or erase has completed.
This is one of the two commands that is executable while the WSM is operating.
See Section 3.3.2.
18
(See 40H/Program Set-Up)
Prepares the CUI for the Erase Confirm command. If the next command is not an
Erase Confirm command, then the CUI will set both the Program Status (SR.4) and
Erase Status (SR.5) bits of the status register to a “1,” place the device into the
read status register state, and wait for another command without modifying array
contents. This can be used to cancel an erase operation after the Erase Set-Up
command has been issued. If an operation has already been initiated to the WSM
this can not cancel that operation in progress.
SEE NEW DESIGN RECOMMENDATIONS
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Table 6. Command Codes and Descriptions (Continued)
Code Device Mode
50
Clear Status
Register
Description
The WSM can only set the Program Status and Erase Status bits in the status
register to “1;” it cannot clear them to “0.”
The status register operates in this fashion for two reasons. The first is to give the
host CPU the flexibility to read the status bits at any time. Second, when
programming a string of bytes, a single status register query after programming the
string may be more efficient, since it will return the accumulated error status of the
entire string. See Section 3.3.2.1.
90
Intelligent
Identifier
Puts the device into the intelligent identifier read mode, so that reading the device
will output the manufacturer and device codes. (A0 = 0 for manufacturer,
A0 = 1 for device, all other address inputs are ignored). See Section 3.2.2.
Table 7. Command Bus Definitions
First Bus Cycle (1)
Command
Read Array
Intelligent Identifier
Read Status Register
Note
Oper
Addr
Data
1
Write
X
FFH
1, 2, 4
Write
X
3
Write
Clear Status Register
Oper
Addr
Data
90H
Read
IA
IID
X
70H
Read
X
SRD
Write
X
50H
40H/10H
Write
PA
PD
Write
BA
D0H
Word/Byte Program
1, 6, 7
Write
PA
Block Erase/Confirm
1, 5
Write
BA
20H
Erase Suspend
Write
X
B0H
Erase Resume
Write
X
D0H
ADDRESS
BA= Block Address
IA= Identifier Address
PA= Program Address
X= Don’t Care
Second Bus Cycle (1)
DATA
SRD= Status Register Data
IID= Identifier Data
PD= Program Data
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
Bus operations are defined in Tables 3 and 4.
IA = Identifier Address: A0 = 0 for manufacturer code, A0 = 1 for device code.
SRD = Data read from status register.
IID = Intelligent Identifier Data. Following the Intelligent Identifier command, two read operations access manufacturer and
device codes.
BA = Address within the block being erased.
PA = Address to be programmed. PD = Data to be programmed at location PA.
Either 40H or 10H commands is valid.
When writing commands to the device, the upper data bus [DQ8–DQ15] = X (28F200 only) which is either VIL or VIH, to
minimize current draw.
SEE NEW DESIGN RECOMMENDATIONS
19
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Table 8. Status Register Bit Definition
WSMS
ESS
ES
DWS
VPPS
R
R
R
7
6
5
4
3
2
1
0
NOTES:
SR.7 = WRITE STATE MACHINE STATUS
1 = Ready
(WSMS)
0 = Busy
Check Write State Machine bit first to determine
Word/Byte program or Block Erase completion,
before checking Program or Erase Status bits.
SR.6 = ERASE-SUSPEND STATUS (ESS)
1 = Erase Suspended
0 = Erase In Progress/Completed
When Erase Suspend is issued, WSM halts
execution and sets both WSMS and ESS bits to
“1.” ESS bit remains set to “1” until an Erase
Resume command is issued.
SR.5 = ERASE STATUS (ES)
1 = Error In Block Erasure
0 = Successful Block Erase
When this bit is set to “1,” WSM has applied the
max number of erase pulses to the block and is
still unable to verify successful block erasure.
SR.4 = PROGRAM STATUS (DWS)
1 = Error in Byte/Word Program
0 = Successful Byte/Word Program
When this bit is set to “1,” WSM has attempted
but failed to program a byte or word.
SR.3 = VPP STATUS (VPPS)
1 = VPP Low Detect, Operation Abort
0 = VPP OK
The VPP Status bit does not provide continuous
indication of VPP level. The WSM interrogates VPP
level only after the Program or Erase command
sequences have been entered, and informs the
system if V PP has not been switched on. The VPP
Status bit is not guaranteed to report accurate
feedback between VPPLK and VPPH.
SR.2–SR.0 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
These bits are reserved for future use and should
be masked out when polling the status register.
3.3.2
STATUS REGISTER
The device status register indicates when a
program or erase operation is complete, and the
success or failure of that operation. To read the
status register write the Read Status (70H)
command to the CUI. This causes all subsequent
read operations to output data from the status
register until another command is written to the
CUI. To return to reading from the array, issue a
Read Array (FFH) command.
The status register bits are output on DQ0–DQ7, in
both byte-wide (x8) or word-wide (x16) mode. In the
word-wide mode the upper byte, DQ8–DQ15,
outputs 00H during a Read Status command. In the
byte-wide mode, DQ8–DQ14 are tri-stated and
DQ15/A–1 retains the low order address function.
20
Important: The contents of the status register
are latched on the falling edge of OE# or CE#,
whichever occurs last in the read cycle. This
prevents possible bus errors which might occur if
status register contents change while being read.
CE# or OE# must be toggled with each subsequent
status read, or the status register will not indicate
completion of a program or erase operation.
When the WSM is active, the SR.7 register will
indicate the status of the WSM, and will also hold
the bits indicating whether or not the WSM was
successful in performing the desired operation.
SEE NEW DESIGN RECOMMENDATIONS
E
3.3.2.1
Clearing the Status Register
The WSM sets status bits 3 through 7 to “1,” and
clears bits 6 and 7 to “0,” but cannot clear status
bits 3 through 5 to “0.” Bits 3 through 5 can only be
cleared by the controlling CPU through the use of
the Clear Status Register (50H) command, because
these bits indicate various error conditions. By
allowing the system software to control the resetting
of these bits, several operations may be performed
(such as cumulatively programming several bytes
or erasing multiple blocks in sequence) before
reading the status register to determine if an error
occurred during that series. Clear the status register
before beginning another command or sequence.
Note, again, that a Read Array command must be
issued before data can be read from the memory or
intelligent identifier.
3.3.3
2-MBIT SmartVoltage BOOT BLOCK FAMILY
The status register should be cleared before
attempting the next operation. Any CUI instruction
can follow after programming is completed;
however, reads from the memory array or intelligent
identifier cannot be accomplished until the CUI is
given the appropriate command.
3.3.4
ERASE MODE
To erase a block, write the Erase Set-Up and Erase
Confirm commands to the CUI, along with the
addresses identifying the block to be erased. These
addresses are latched internally when the Erase
Confirm command is issued. Block erasure results
in all bits within the block being set to “1.” Only one
block can be erased at a time.
The WSM will execute a sequence of internally
timed events to:
PROGRAM MODE
Programming is executed using a two-write
sequence. The Program Set-Up command is written
to the CUI followed by a second write which
specifies the address and data to be programmed.
The WSM will execute a sequence of internally
timed events to:
1. Program the desired bits of the addressed
memory word or byte.
2. Verify that the desired bits are sufficiently
programmed.
Programming of the memory results in specific bits
within a byte or word being changed to a “0.”
If the user attempts to program “1”s, there will be no
change of the memory cell content and no error
occurs.
The status register indicates programming status:
while the program sequence is executing, bit 7 of
the status register is a “0.” The status register can
be polled by toggling either CE# or OE#. While
programming, the only valid command is Read
Status Register.
When programming is complete, the program status
bits should be checked. If the programming
operation was unsuccessful, bit 4 of the status
register is set to a “1” to indicate a Program Failure.
If bit 3 is set to a “1,” then VPP was not within
acceptable limits, and the WSM did not execute the
programming sequence.
1. Program all bits within the block to “0.”
2. Verify that all bits within the block are
sufficiently programmed to “0.”
3. Erase all bits within the block to “1.”
4. Verify that all bits within the block are
sufficiently erased.
While the erase sequence is executing, bit 7 of the
status register is a “0.”
When the status register indicates that erasure is
complete, check the erase status bit to verify that
the erase operation was successful. If the erase
operation was unsuccessful, bit 5 of the status
register will be set to a “1,” indicating an Erase
Failure. If VPP was not within acceptable limits after
the Erase Confirm command is issued, the WSM
will not execute an erase sequence; instead, bit 5 of
the status register is set to a “1” to indicate an
Erase Failure, and bit 3 is set to a “1” to identify that
VPP supply voltage was not within acceptable limits.
Clear the status register before attempting the next
operation. Any CUI instruction can follow after
erasure is completed; however, reads from the
memory array, status register, or intelligent
identifier cannot be accomplished until the CUI is
given the Read Array command.
SEE NEW DESIGN RECOMMENDATIONS
21
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
3.3.4.1
Suspending and Resuming Erase
Since an erase operation requires on the order of
seconds to complete, an Erase Suspend command
is provided to allow erase-sequence interruption in
order to read data from another block of the
memory. Once the erase sequence is started,
writing the Erase Suspend command to the CUI
requests that the WSM pause the erase sequence
at a predetermined point in the erase algorithm. The
status register will indicate if/when the erase
operation has been suspended.
3.4.2
WP# = VIL FOR BOOT BLOCK
LOCKING
When WP# = VIL, the boot block is locked and any
program or erase operation to the boot block will
result in an error in the status register. All other
blocks remain unlocked in this condition and can be
programmed or erased normally. Note that this
feature is overridden and the boot block unlocked
when RP# = VHH.
RP# = VHH OR WP# = VIH FOR BOOT
BLOCK UNLOCKING
3.4.3
At this point, a Read Array command can be written
to the CUI in order to read data from blocks other
than that which is being suspended. The only other
valid command at this time is the Erase Resume
command or Read Status Register command.
2. RP# = VHH
During erase suspend mode, the chip can go into a
pseudo-standby mode by taking CE# to VIH, which
reduces active current draw.
If both or either of these two conditions are met, the
boot block will be unlocked and can be
programmed or erased.
To resume the erase operation, enable the chip by
taking CE# to VIL, then issuing the Erase Resume
command, which continues the erase sequence to
completion. As with the end of a standard erase
operation, the status register must be read, cleared,
and the next instruction issued in order to continue.
3.4
Boot Block Locking
The boot block family architecture features a
hardware-lockable boot block so that the kernel
code for the system can be kept secure while the
parameter and main blocks are programmed and
erased independently as necessary. Only the boot
block can be locked independently from the other
blocks. The truth table, Table 9, clearly defines the
write protection methods.
3.4.1
VPP = VIL FOR COMPLETE
PROTECTION
For complete write protection of all blocks in the
flash device, the VPP programming voltage can be
held low. When VPP is below VPPLK, any program or
erase operation will result in a error in the status
register.
22
Two methods can be used to unlock the boot block:
1. WP# = VIH
3.4.4
UPGRADE NOTE FOR 8-MBIT
44-PSOP PACKAGE
If upgradability to 8 Mbit is required, note that the
8-Mbit in the 44-PSOP does not have a WP#
because no pins were available for the 8-Mbit
upgrade address. Thus, in this density-package
combination only, VHH (12 V) on RP# is required to
unlock the boot block. Unlocking with a logic-level
signal is not possible. If this functionality is
required, and 12 V is not available, consider using
the 48-TSOP package, which has a WP# pin and
can be unlocked with a logic-level signal. All other
density-package combinations have WP# pins.
Table 9. Write Protection Truth Table
VPP
RP#
WP#
Write Protection
Provided
VIL
X
X
All Blocks Locked
≥ VPPLK
VIL
X
All Blocks Locked
(Reset)
≥ VPPLK
VHH
X
All Blocks Unlocked
≥ VPPLK
VIH
VIL
Boot Block Locked
≥ VPPLK
VIH
VIH
All Blocks Unlocked
SEE NEW DESIGN RECOMMENDATIONS
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Start
Bus
Operation
Command
Write 40H,
Word/Byte Address
Write
Setup
Program
Data = 40H
Addr = Word/Byte to Program
Write
Program
Data = Data to Program
Addr = Location to Program
Write Word/Byte
Data/Address
Comments
Status Register Data Toggle CE#
or OE# to Update SRD
Read
Read
Status Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
NO
Repeat for subsequent word/byte program operations.
SR Full Status Check can be done after each word/byte program,
or after a sequence of word/byte programs.
Write FFH after the last program operation to reset device to
read array mode.
SR.7 = 1
?
YES
Full Status
Check if Desired
Word/Byte Program
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
1
SR.3 =
1
0
Word/Byte Program
Successful
Comments
Standby
Check SR.3
1 = VPP Low Detect
Standby
Check SR.4
1 = Word/Byte Program Error
VPP Range Error
0
SR.4 =
Command
Word/Byte Program
Error
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
SR.4 is only cleared by the Clear Status Register Command, in cases
where multiple bytes are programmed before full status is checked.
If error is detected, clear the Status Register before attempting retry or
other error recovery.
0530_09
Figure 9. Automated Word/Byte Programming Flowchart
SEE NEW DESIGN RECOMMENDATIONS
23
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Start
Bus
Operation
Write 20H,
Block Address
Write
Erase Setup
Data = 20H
Addr = Within Block to Be Erased
Write
Erase
Confirm
Data = D0H
Addr = Within Block to Be Erased
Write D0H and
Block Address
Status Register Data Toggle CE#
or OE# to Update Status Register
Read
Read Status
Register
Suspend Erase
Loop
NO
0
SR.7 =
Suspend
Erase
Comments
Command
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
YES
Repeat for subsequent block erasures.
Full Status Check can be done after each block erase, or after a
sequence of block erasures.
Write FFH after the last operation to reset device to read array mode.
1
Full Status
Check if Desired
Block Erase
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
SR.3 =
1
1
Comments
Standby
Check SR.3
1 = VPP Low Detect
Standby
Check SR.4,5
Both 1 = Command Sequence Error
Standby
Check SR.5
1 = Block Erase Error
VPP Range Error
0
SR.4,5 =
Command
Command Sequence
Error
0
SR.3 MUST be cleared, if set during an erase attempt, before further
attempts are allowed by the Write State Machine.
1
SR.5 =
0
Block Erase Successful
Block Erase Error
SR.5 is only cleared by the Clear Status Register Command, in
cases where multiple blocks are erase before full status is checked.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
0530_10
Figure 10. Automated Block Erase Flowchart
24
SEE NEW DESIGN RECOMMENDATIONS
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Bus
Operation
Start
Write
Command
Comments
Program
Data = B0H
Erase Suspend
Suspend
Addr = X
Write B0H
Write
Read
Write 70H
Read Status
Standby
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Addr = X
Standby
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
Read
Read Status Register
0
SR.7 =
1
0
SR.6 =
Erase Completed
Data=70H
Addr=X
Standby
Write
Read Array
Write
Read
Read Array
Read
Write
Program
Resume
Write
Erase Resume
1
Write FFH
Check SR.6
1 = Erase Suspended
0 = Erase Completed
Data = FFH
Addr = X
Read array data from block
other than the one being
programmed.
Data = D0H
Addr = X
Read Array Data
No
Done
Reading
Yes
Write D0H
Write FFH
Erase Resumed
Read Array Data
0530_11
Figure 11. Erase Suspend/Resume Flowchart
SEE NEW DESIGN RECOMMENDATIONS
25
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
3.5
3.5.1
Power Consumption
ACTIVE POWER
With CE# at a logic-low level and RP# at a logichigh level, the device is placed in the active mode.
Refer to the DC Characteristics table for ICC current
values.
3.5.2
AUTOMATIC POWER SAVINGS (APS)
Automatic Power Savings (APS) provides lowpower operation during active mode. Power
Reduction Control (PRC) circuitry allows the device
to put itself into a low current state when not being
accessed. After data is read from the memory
array, PRC logic controls the device’s power
consumption by entering the APS mode where
typical ICC current is less than 1 mA. The device
stays in this static state with outputs valid until a
new location is read.
3.5.3
STANDBY POWER
With CE# at a logic-high level (VIH), and the CUI in
read mode, the memory is placed in standby mode,
which disables much of the device’s circuitry and
substantially reduces power consumption. Outputs
(DQ0–DQ15 or DQ0–DQ7) are placed in a highimpedance state independent of the status of the
OE# signal. When CE# is at logic-high level during
erase or program operations, the device will
continue to perform the operation and consume
corresponding active power until the operation is
completed.
During erase or program modes, RP# low will abort
either erase or program operations, but the memory
contents are no longer valid as the data has been
corrupted by the RP# function. As in the read mode
above, all internal circuitry is turned off to achieve
the power savings.
RP# transitions to VIL, or turning power off to the
device will clear the status register.
3.6
The device is protected against accidental block
erasure or programming during power transitions.
Power supply sequencing is not required, since the
device is indifferent as to which power supply, VPP
or VCC, powers-up first. The CUI is reset to the read
mode after power-up, but the system must drop
CE# low or present a new address to ensure valid
data at the outputs.
A system designer must guard against spurious
writes when VCC voltages are above VLKO and VPP
is active. Since both WE# and CE# must be low for
a command write, driving either signal to VIH will
inhibit writes to the device. The CUI architecture
provides additional protection since alteration of
memory contents can only occur after successful
completion of the two-step command sequences.
The device is also disabled until RP# is brought to
VIH, regardless of the state of its control inputs. By
holding the device in reset (RP# connected to
system PowerGood) during power-up/down, invalid
bus conditions during power-up can be masked,
providing yet another level of memory protection.
3.6.1
3.5.4
DEEP POWER-DOWN MODE
The SmartVoltage boot block family supports a low
typical ICC in deep power-down mode, which turns
off all circuits to save power. This mode is activated
by the RP# pin when it is at a logic-low (GND ±
0.2 V).
NOTE
Note: BYTE# pin must be at CMOS levels to
meet the ICCD specification.
During read modes, the RP# pin going low deselects the memory and places the output drivers in
a high impedance state. Recovery from the deep
power-down state, requires a minimum access time
of tPHQV (see AC Characteristics table).
26
Power-Up/Down Operation
RP# CONNECTED TO SYSTEM
RESET
The use of RP# during system reset is important
with automated program/erase devices because the
system expects to read from the flash memory
when it comes out of reset. If a CPU reset occurs
without a flash memory reset, proper CPU
initialization would not occur because the flash
memory may be providing status information
instead of array data. Intel’s Flash memories allow
proper CPU initialization following a system reset
by connecting the RP# pin to the same RESET#
signal that resets the system CPU.
SEE NEW DESIGN RECOMMENDATIONS
E
3.6.2
2-MBIT SmartVoltage BOOT BLOCK FAMILY
VCC, VPP AND RP# TRANSITIONS
The CUI latches commands as issued by system
software and is not altered by VPP or CE#
transitions or WSM actions. Its default state upon
power-up, after exit from deep power-down mode,
or after VCC transitions above VLKO (lockout
voltage), is read array mode.
After any word/byte program or block erase
operation is complete and even after VPP transitions
down to VPPLK, the CUI must be reset to read array
mode via the Read Array command if accesses to
the flash memory are desired.
Please refer to Intel’s application note AP-617
Additional Flash Data Protection Using VPP, RP#,
and WP# for a circuit-level description of how to
implement the protection discussed in Section 3.6.
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require careful device decoupling methods. System
designers should consider three supply current
issues:
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 µF ceramic
capacitor connected between each VCC and GND,
and between its VPP and GND. These highfrequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
VPP TRACE ON PRINTED CIRCUIT
BOARDS
Designing for in-system programming of the flash
memory requires special consideration of the VPP
power supply trace by the printed circuit board
designer. The VPP pin supplies the flash memory
cells current for programming and erasing. One
should use similar trace widths and layout
considerations given to the VCC power supply trace.
Adequate VPP supply traces, and decoupling
capacitors placed adjacent to the component, will
decrease spikes and overshoots.
1. Standby current levels (ICCS)
2. Active current levels (I CCR)
3. Transient peaks produced by falling and rising
edges of CE#.
NOTE:
Table headings in the DC and AC characteristics tables (i.e., BV-60, BV-80, BV-120, TBV-80, TBE120) refer to the specific products listed below. See Section 5.0 for more information on product
naming and line items.
Abbreviation
Applicable Product Names
BV-60
E28F002BV-T60, E28F002BV-B60, PA28F200BV-T60, PA28F200BV-B60,
E28F200CV-T60, E28F200CV-B60, E28F200BV-T60, E28F200BV-B60
BV-80
E28F002BV-T80, E28F002BV-B80, PA28F200BV-T80, PA28F200BV-B80,
E28F200CV-T80, E28F200CV-B80, E28F200BV-T80, E28F200BV-B80
BV-120
E28F002BV-T120, E28F002BV-B120, PA28F200BV-T120, PA28F200BV-B120
TBV-80
TE28F002BV-T80, TE28F002BV-B80, TB28F200BV-T80, TB28F200BV-B80,
TE28F200CV-T80, TE28F200CV-B80, TE28F200BV-T80, TE28F200BV-B80
SEE NEW DESIGN RECOMMENDATIONS
27
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.0
ELECTRICAL SPECIFICATIONS
4.1
Absolute Maximum Ratings*
Commercial Operating Temperature
During Read .............................. 0 °C to +70 °C
During Block Erase
and Word/Byte Program ............ 0 °C to +70 °C
Temperature Under Bias ....... –10 °C to +80 °C
Extended Operating Temperature
NOTICE: This datasheet contains preliminary information on
new products in production. Do not finalize a design with
this information. Revised information will be published when
the product is available. Verify with your local Intel Sales
office that you have the latest datasheet before finalizing a
design.
* WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent damage. These
are stress ratings only. Operation beyond the "Operating
Conditions" is not recommended and extended exposure
beyond the "Operating Conditions" may effect device
reliability.
During Read .......................... –40 °C to +85 °C
During Block Erase
and Word/Byte Program ........ –40 °C to +85 °C
Temperature Under Bias ....... –40 °C to +85 °C
Storage Temperature................. –65 °C to +125 °C
NOTES:
1.
Operating temperature is for commercial product
defined by this specification.
Minimum DC voltage is –0.5 V on input/output pins.
During transitions, this level may undershoot to –2.0 V
for periods
<20 ns. Maximum DC voltage on input/output pins is
VCC + 0.5 V which, during transitions, may overshoot to
VCC + 2.0 V for periods <20 ns.
Maximum DC voltage on VPP may overshoot to +14.0 V
for periods <20 ns. Maximum DC voltage on RP# or A9
may overshoot to 13.5 V for periods <20 ns.
Output shorted for no more than one second. No more
than one output shorted at a time.
2.
Voltage on Any Pin
(except VCC, VPP, A9 and RP#)
with Respect to GND ........... –2.0 V to +7.0 V (2)
Voltage on Pin RP# or Pin A9
with Respect to GND ....... –2.0 V to +13.5 V(2,3)
3.
VPP Program Voltage with Respect
to GND during Block Erase
4.
and Word/Byte Program .. –2.0 V to +14.0 V(2,3)
VCC Supply Voltage
with Respect to GND ........... –2.0 V to +7.0 V (2)
Output Short Circuit Current....................100 mA (4)
4.2
Commercial Operating Conditions
Table 10. Commercial Temperature and VCC Operating Conditions
Symbol
Parameter
Notes
TA
Operating Temperature
VCC
3.3 V VCC Supply Voltage (± 0.3 V)
Min
Max
Units
0
+70
°C
3.0
3.6
Volts
5 V VCC Supply Voltage (10%)
1
4.50
5.50
Volts
5 V VCC Supply Voltage (5%)
2
4.75
5.25
Volts
NOTES:
1. 10% VCC specifications apply to the 60 ns, 80 ns and 120 ns product versions in their standard test configuration.
2. 5% VCC specifications apply to the 60 ns version in its high-speed test configuration.
28
SEE NEW DESIGN RECOMMENDATIONS
E
4.2.1
2-MBIT SmartVoltage BOOT BLOCK FAMILY
APPLYING VCC VOLTAGES
required. If VCC ramps faster than 1V/100 µs (0.01
V/µs), then a delay of 2 µs is required before
initiating device operation. RP# = GND is
recommended during power-up to protect against
spurious write signals when VCC is between VLKO
and VCCMIN.
When applying VCC voltage to the device, a delay
may be required before initiating device operation,
depending on the VCC ramp rate. If VCC ramps
slower than 1V/100 µs (0.01 V/µs) then no delay is
VCC Ramp Rate
Required Timing
≤ 1V/100 µs
No delay required.
> 1V/100 µs
A delay time of 2 µs is required before any device operation is initiated, including read
operations, command writes, program operations, and erase operations. This delay is
measured beginning from the time VCC reaches VCCMIN (3.0 V for 3.3 ± 0.3 V operation;
and 4.5 V for 5 V operation).
NOTES:
1. These requirements must be strictly followed to guarantee all other read and write specifications.
2. To switch between 3.3 V and 5 V operation, the system should first transition VCC from the existing voltage range to GND,
and then to the new voltage. Any time the VCC supply drops below VCCMIN, the chip may be reset, aborting any operations
pending or in progress.
3. These guidelines must be followed for any VCC transition from GND.
4.3
Capacitance
TA = 25 °C, f = 1 MHz
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Note
Typ
Max
Unit
1
6
8
pF
VIN = 0 V
Conditions
1, 2
10
12
pF
VOUT = 0 V
NOTES:
1. Sampled, not 100% tested.
2. For the 28F002B, address pin A10 follows the COUT capacitance numbers.
SEE NEW DESIGN RECOMMENDATIONS
29
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.4
DC Characteristics—Commercial
BV-60
BV-80
BV-120
Prod
Sym
Parameter
VCC
3.3 ± 0.3 V
Note
Typ
Max
5 V ± 10%
Typ
Unit
Test Conditions
Max
IIL
Input Load Current
1
± 1.0
± 1.0
µA
VCC = VCC Max
VIN = VCC or GND
ILO
Output Leakage Current
1
± 10
± 10
µA
VCC = VCC Max
VIN = VCC or GND
ICCS
VCC Standby Current
ICCD
VCC Deep Power-Down
Current
ICCR
VCC Read Current for
Word or Byte
ICCW
ICCE
30
VCC Program Current for
Word or Byte
VCC Erase Current
0.4
1.5
0.8
2.0
mA
VCC = VCC Max
CE# = RP# = BYTE# =
WP# = VIH
60
110
50
130
µA
VCC = VCC Max
CE# = RP# = VCC ±
0.2 V
1
0.2
8
0.2
8
µA
1,5,6
15
30
50
60
mA
VCC = VCC Max
VIN = VCC or GND
RP# = GND ± 0.2 V
CMOS INPUTS
VCC = VCC Max
CE# = GND, OE# = VCC
f = 10 MHz (5 V),
5 MHz (3.3 V)
IOUT = 0 mA, Inputs =
GND ± 0.2 V or VCC
± 0.2 V
15
30
55
65
mA
TTL INPUTS
VCC = VCC Max
CE# = VIL, OE# = VIH
f = 10 MHz (5 V),
5 MHz (3.3 V)
IOUT = 0 mA, Inputs =
VIL or VIH
13
30
30
50
mA
VPP = VPPH1 (at 5 V)
Program in Progress
10
25
30
45
mA
VPP = VPPH2 (at 12 V)
Program in Progress
13
30
18
35
mA
10
25
18
30
mA
VPP = VPPH1 (at 5 V)
Block Erase in Progress
VPP = VPPH2 (at 12 V)
Block Erase in Progress
1,3
1,4
1,4
SEE NEW DESIGN RECOMMENDATIONS
E
4.4
2-MBIT SmartVoltage BOOT BLOCK FAMILY
DC Characteristics—Commercial (Continued)
BV-60
BV-80
BV-120
Prod
Sym
Parameter
VCC
3.3 ± 0.3 V
5 V ± 10%
Note
Typ
Max
Typ
Max
Unit
Test Conditions
ICCES
VCC Erase Suspend
Current
1,2
3
8.0
5
10
mA
CE# = VIH
Block Erase Suspend
IPPS
VPP Standby Current
1
± 0.5
± 15
± 0.5
± 10
µA
VPP < VPPH2
IPPD
VPP Deep Power-Down
Current
1
0.2
5.0
0.2
5.0
µA
RP# = GND ± 0.2 V
IPPR
VPP Read Current
1
50
200
30
200
µA
VPP ≥ VPPH2
IPPW
VPP Program Current for
Word or Byte
1,4
13
30
13
25
mA
VPP = VPPH1 (at 5 V)
Program in Progress
8
25
8
20
13
30
10
20
mA
8
25
5
15
VPP = VPPH2 (at 12 V)
Program in Progress
VPP = VPPH1 (at 5 V)
Block Erase in Progress
VPP = VPPH2 (at 12 V)
Block Erase in Progress
50
200
30
200
µA
VPP = VPPH
Block Erase Suspend in
Progress
IPPE
VPP Erase Current
1,4
IPPES
VPP Erase
Suspend Current
IRP#
RP# Boot Block Unlock
Current
1,4
500
500
µA
RP# = VHH
IID
A9 Intelligent
Identifier Current
1,4
500
500
µA
A9 = VID
1
SEE NEW DESIGN RECOMMENDATIONS
31
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.4
DC Characteristics—Commercial (Continued)
BV-60
BV-80
BV-120
Prod
Sym
Parameter
VCC
3.3 ± 0.3 V
5 V ± 10%
Note
Min
Max
Min
Max
Unit
Test Conditions
VID
A9 Intelligent Identifier
Voltage
11.4
12.6
11.4
12.6
V
VIL
Input Low Voltage
–0.5
0.8
–0.5
0.8
V
VIH
Input High Voltage
2.0
VCC +
0.5V
2.0
VCC +
0.5V
V
VOL
Output Low Voltage
0.45
V
VCC = VCC Min
IOL = 5.8 mA
VOH1
Output High Voltage (TTL)
VOH2
Output High Voltage (CMOS)
VPPLK VPP Lock-Out Voltage
0.45
2.4
V
VCC = VCC Min
IOH = –2.5 mA
0.85 ×
VCC
0.85 ×
VCC
V
VCC–
0.4V
VCC–
0.4V
VCC = VCC Min
IOH = –2.5 mA
VCC = VCC Min
IOH = –100 µA
V
0.0
1.5
0.0
1.5
V
Total Write Protect
VPPH1 VPP (Prog/Erase Operations)
4.5
5.5
4.5
5.5
V
VPP at 5 V
VPPH2 VPP (Prog/Erase Operations)
11.4
12.6
11.4
12.6
V
VPP at 12 V
VLKO
VCC Erase/Prog Lock Voltage
VHH
RP# Unlock Voltage
3
2.4
8
2.0
11.4
2.0
12.6
11.4
V
12.6
V
Boot Block Unlock
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, T = +25 °C. These currents are valid for all
product versions (packages and speeds).
2. ICCES is specified with the device deselected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Block erases and word/byte programs are inhibited when VPP = VPPLK, and not guaranteed in the range between VPPH1 and
VPPLK.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces ICCR to less than 1 mA typical, in static operation.
6. CMOS Inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.
7. For the 28F002B, address pin A10 follows the COUT capacitance numbers.
8. For all BV/CV parts, VLKO = 2.0 V for both 3.3 V and 5 V operations.
32
SEE NEW DESIGN RECOMMENDATIONS
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
3.0
INPUT
1.5
TEST POINTS
OUTPUT
1.5
0.0
NOTE:
AC test inputs are driven at 3.0 V for a logic “1” and 0.0 V for a logic “0.” Input timing begins, and output timing ends, at 1.5 V.
Input rise and fall times (10% to 90%) <10 ns.
0530_12
Figure 12. 3.3 V Inputs and Measurement Points
2.4
2.0
2.0
INPUT
OUTPUT
TEST POINTS
0.8
0.45
0.8
NOTE:
AC test inputs are driven at VOH (2.4 VTTL) for a logic “1” and VOL (0.45 VTTL) for a logic “0.” Input timing begins at VIH (2.0 VTTL)
and VIL (0.8 VTTL) . Output timing ends at VIH and VIL. Input rise and fall times (10% to 90%) <10 ns.
0530_13
Figure 13. 5 V Inputs and Measurement Points
Test Configuration Component Values
VCC
Test Configuration
R1
DEVICE
UNDER
TEST
OUT
CL
CL (pF) R1 (Ω) R2 (Ω)
3.3 V Standard Test
50
990
770
5 V Standard Test
100
580
390
5 V High-Speed Test
30
580
390
NOTE: CL includes jig capacitance.
R2
0530_14
NOTE: See table for component values.
Figure 14. Test Configuration
SEE NEW DESIGN RECOMMENDATIONS
33
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.5
AC Characteristics—Commercial
Prod
Sym
Parameter
BV-60
VCC
3.3 ± 0.3 V(5)
5 V ± 5%(6)
5 V ± 10%(7)
Load
50 pF
30 pF
100 pF
Note
Min
Max
Max
Max
Read Cycle Time
tAVQV
Address to Output Delay
tELQV
CE# to Output Delay
tPHQV
RP# to Output Delay
tGLQV
OE# to Output Delay
2
tELQX
CE# to Output in Low Z
3
tEHQZ
CE# to Output in High Z
3
tGLQX
OE# to Output in Low Z
3
tGHQZ
OE# to Output in High Z
3
tOH
Output Hold from Address,
CE#, or OE# Change,
Whichever Occurs First
3
0
0
0
ns
tELFL
tELFH
CE# Low to BYTE# High or
Low
3
0
0
0
ns
tAVFL
Address to BYTE# High or
Low
3
5
5
5
ns
tFLQV
tFHQV
BYTE# to Output Delay
3,4
110
60
70
ns
tFLQZ
BYTE# Low to Output in
High Z
3
45
20
25
ns
tPLPH
Reset Pulse Width Low
8
tPLQZ
RP# Low to Output High-Z
2
60
Min
tAVAV
34
110
Min
Unit
70
ns
110
60
70
ns
110
60
70
ns
0.8
0.45
0.45
µs
65
30
35
ns
0
0
45
0
0
20
0
45
150
20
0
20
60
150
ns
ns
20
60
60
ns
ns
ns
60
ns
SEE NEW DESIGN RECOMMENDATIONS
E
4.5
2-MBIT SmartVoltage BOOT BLOCK FAMILY
AC Characteristics—Commercial (Continued)
Prod
Sym
Parameter
VCC
BV-80
Load
Notes
BV-120
3.3 ± 0.3V(5) 5V ± 10%(7) 3.3 ± 0.3V(5) 5V ± 10%(7) Unit
50 pF
Min
100 pF
Max
150
Min
Max
Min
100 pF
Max
180
Min
Max
tAVAV
Read Cycle Time
tAVQV
Address to Output Delay
tELQV
CE# to Output Delay
tPHQV
RP# to Output Delay
tGLQV
OE# to Output Delay
2
tELQX
CE# to Output in Low Z
3
tEHQZ
CE# to Output in High Z
3
tGLQX
OE# to Output in Low Z
3
tGHQZ
OE# to Output in High Z
3
tOH
Output Hold from Address,
CE#, or OE# Change,
Whichever Occurs First
3
0
0
0
0
ns
tELFL
tELFH
CE# Low to BYTE# High or
Low
3
0
0
0
0
ns
tAVFL
Address to BYTE# High or
Low
3
5
5
5
5
ns
tFLQV
tFHQV
BYTE# to Output Delay
3,4
150
80
180
120
ns
tFLQZ
BYTE# Low to Output in
High Z
3
60
30
60
30
ns
tPLPH
Reset Pulse Width Low
8
tPLQZ
RP# Low to Output High-Z
2
80
50 pF
120
ns
150
80
180
120
ns
150
80
180
120
ns
0.8
0.45
0.8
0.45
µs
90
40
90
40
ns
0
0
45
0
0
20
0
45
150
45
0
20
60
150
0
25
0
45
150
60
ns
ns
20
60
150
ns
ns
ns
60
ns
NOTES:
1. See AC Input/Output Reference Waveform for timing measurements.
2. OE# may be delayed up to tCE–tOE after the falling edge of CE# without impact on tCE.
3. Sampled, but not 100% tested.
4. tFLQV, BYTE# switching low to valid output delay will be equal to tAVQV, measured from the time DQ15/A–1 becomes valid.
5. See Test Configuration (Figure 14), 3.3 V Standard Test component values.
6. See Test Configuration (Figure 14), 5 V High-Speed Test component values.
7. See Test Configuration (Figure 14), 5 V Standard Test component values.
8. The specification tPLPH is the minimum time that RP# must be held low in order to product a valid reset of the device.
SEE NEW DESIGN RECOMMENDATIONS
35
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
ADDRESSES (A)
CE# (E)
Data
Valid
Device and
Address Selection
VIH
Standby
Address Stable
VIL
VIH
t AVAV
VIL
VIH
t EHQZ
OE# (G)
VIL
VIH
tGHQZ
WE# (W)
t GLQX
VIL
VOH
DATA (D/Q)
VOL
RP#(P)
t GLQV
t ELQX
High Z
t OH
t ELQV
High Z
Valid Output
t AVQV
VIH
t PHQV
VIL
0530_15
Figure 15. AC Waveforms for Read Operations
VIH
ADDRESSES (A)
VIL
CE# (E)
Standby
Address Stable
t AVAV
VIH
VIL
OE# (G)
Data
Valid
Device
Address Selection
t EHQZ
t AVFL
VIH
t ELFL
VIL
BYTE# (F)
t GHQZ
VIH
VIL
VOH
DATA (D/Q)
t GLQV
t ELQV
t GLQX
High Z
t ELQX
Data Output
on DQ0-DQ7
(DQ0-DQ7)
VOL
DATA (D/Q)
VOH
High Z
VOL
(DQ15/A-1)
High Z
t AVQV
t FLQZ
High Z
High Z
Data Output
on DQ8-DQ14
(DQ8-DQ14)
VOH
t OH
Data Output
on DQ0-DQ7
t AVQV
Data Output
on DQ15
Address Input
High Z
VOL
0530_16
Figure 16. BYTE# Timing Diagram for Read Operations
36
SEE NEW DESIGN RECOMMENDATIONS
E
4.6
2-MBIT SmartVoltage BOOT BLOCK FAMILY
AC Characteristics—WE#-Controlled Write Operations(1)—Commercial
Prod
Sym
Parameter
BV-60
VCC
3.3 ± 0.3 V(9)
5 V ± 5%(10)
5 V ± 10%(10)
Load
50 pF
30 pF
100 pF
Note
Min
Max
Min
Max
Min
Unit
Max
tAVAV
Write Cycle Time
110
60
70
ns
tPHWL
RP# Setup to WE# Going Low
0.8
0.45
0.45
µs
tELWL
CE# Setup to WE# Going Low
0
0
0
ns
tPHHWH
Boot Block Lock Setup to WE#
Going High
6,8
200
100
100
ns
tVPWH
VPP Setup to WE# Going High
5,8
200
100
100
ns
tAVWH
Address Setup to WE# Going
High
3
90
50
50
ns
tDVWH
Data Setup to WE# Going High
4
90
50
50
ns
tWLWH
WE# Pulse Width
90
50
50
ns
tWHDX
Data Hold Time from WE# High
4
0
0
0
ns
tWHAX
Address Hold Time from WE#
High
3
0
0
0
ns
tWHEH
CE# Hold Time from WE# High
0
0
0
ns
tWHWL
WE# Pulse Width High
20
10
20
ns
tWHQV1
Duration of Word/Byte Program
6
6
6
µs
tWHQV2
Duration of Erase (Boot)
2,5,6
0.3
0.3
0.3
s
tWHQV3
Duration of Erase (Parameter)
2,5
0.3
0.3
0.3
s
tWHQV4
Duration of Erase (Main)
2,5
0.6
0.6
0.6
s
tQVVL
VPP Hold from Valid SRD
5,8
0
0
0
ns
tQVPH
RP# VHH Hold from Valid SRD
6,8
0
0
0
ns
tPHBR
Boot-Block Lock Delay
7,8
2,5
200
SEE NEW DESIGN RECOMMENDATIONS
100
100
ns
37
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.6
AC Characteristics—WE#-Controlled Write Operations(1)—Commercial
(Continued)
Prod
Sym
Parameter
VCC
BV-80
3.3 ±0.3V(9)
Load
Notes
50 pF
Min
Max
BV-120
5V±10%(11)
3.3 ± 0.3V(9)
100 pF
Min
Max
50 pF
Min
Max
5V±10%(11) Unit
100 pF
Min
Max
tAVAV
Write Cycle Time
150
80
180
120
ns
tPHWL
RP# Setup to WE# Going
Low
0.8
0.45
0.8
0.45
µs
tELWL
CE# Setup to WE# Going
Low
0
0
0
0
ns
tPHHWH
Boot Block Lock Setup to
WE# Going High
6,8
200
100
200
100
ns
tVPWH
VPP Setup to WE# Going
High
5,8
200
100
200
100
ns
tAVWH
Address Setup to WE#
Going High
3
120
50
150
50
ns
tDVWH
Data Setup to WE# Going
High
4
120
50
150
50
ns
tWLWH
WE# Pulse Width
120
50
150
50
ns
tWHDX
Data Hold Time from
WE# High
4
0
0
0
0
ns
tWHAX
Address Hold Time from
WE# High
3
0
0
0
0
ns
tWHEH
CE# Hold Time from WE#
High
0
0
0
0
ns
tWHWL
WE# Pulse Width High
30
30
30
30
ns
tWHQV1
Word/Byte Program Time
2,5
6
6
6
6
µs
tWHQV2
Erase Duration (Boot)
2,5,6
0.3
0.3
0.3
0.3
s
tWHQV3
Erase Duration (Param)
2,5
0.3
0.3
0.3
0.3
s
tWHQV4
Erase Duration (Main)
2,5
0.6
0.6
0.6
0.6
s
tQVVL
VPP Hold from Valid SRD
5,8
0
0
0
0
ns
tQVPH
RP# VHH Hold from Valid
SRD
6,8
0
0
0
0
ns
tPHBR
Boot-Block Lock Delay
7,8
38
200
100
200
100
ns
SEE NEW DESIGN RECOMMENDATIONS
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
NOTES:
1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC
Characteristics during read mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally
which includes verify and margining operations.
3. Refer to command definition table for valid AIN. (Table 7)
4. Refer to command definition table for valid DIN. (Table 7)
5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1).
6. For boot block program/erase, RP# should be held at VHH or WP# should be held at VIH until operation completes
successfully.
7. Time tPHBR is required for successful locking of the boot block.
8. Sampled, but not 100% tested.
9. See Test Configuration (Figure 14), 3.3 V Standard Test component values.
10. See Test Configuration (Figure 14), 5 V High-Speed Test component values.
11. See Test Configuration (Figure 14), 5 V Standard Test component values.
VIH
1
2
AIN
ADDRESSES (A)
CE# (E)
OE# (G)
3
VIL
VIH
t AVAV
VIL
t
VIH ELWL
4
5
6
AIN
tAVWH
tWHAX
tWHEH
VIL
VIH
t WHWL
t WHQV1,2,3,4
WE# (W)
VIL
VIH
DATA (D/Q)
High Z
VIL
6.5V
VHH
RP# (P)
VIH
t PHWL
t WLWH
t DVWH
t WHDX
DIN
DIN
Valid
SRD
DIN
t PHHWH
tQVPH
t VPWH
t QVVL
VIL
VIH
WP#
VIL
VPPH 2
VPPH1
V (V) V
PP
PPLK
VIL
NOTES:
1. VCC Power-Up and Standby.
2. Write program or Erase Set-Up Command.
3. Write Valid Address and Data (Program) or Erase Confirm Command.
4. Automated Program or Erase Delay.
5. Read Status Register Data.
6. Write Read Array Command.
0530_17
Figure 17. AC Waveforms for Write Operations (WE#–Controlled Writes)
SEE NEW DESIGN RECOMMENDATIONS
39
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.7
AC Characteristics—CE#-Controlled Write Operations(1, 12)—Commercial
Prod
Sym
Parameter
BV-60
VCC
3.3 ± 0.3 V(9)
5 V ± 5%(10)
5 V ± 10%(11)
Load
50 pF
30 pF
100 pF
Note
Min
Max
Min
Max
Min
Unit
Max
tAVAV
Write Cycle Time
110
60
70
ns
tPHEL
RP# High Recovery to CE#
Going Low
0.8
0.45
0.45
µs
tWLEL
WE# Setup to CE# Going Low
0
0
0
ns
tPHHEH
Boot Block Lock Setup to CE#
Going High
6,8
200
100
100
ns
tVPEH
VPP Setup to CE# Going High
5,8
200
100
100
ns
tAVEH
Address Setup to CE# Going
High
3
90
50
50
ns
tDVEH
Data Setup to CE# Going High
4
90
50
50
ns
tELEH
CE# Pulse Width
90
50
50
ns
tEHDX
Data Hold Time from CE# High
4
0
0
0
ns
tEHAX
Address Hold Time from CE#
High
3
0
0
0
ns
tEHWH
WE # Hold Time from CE# High
0
0
0
ns
tEHEL
CE# Pulse Width High
20
10
20
ns
tEHQV1
Duration of Word/Byte
Programming Operation
2,5
6
6
6
µs
tEHQV2
Erase Duration (Boot)
2,5,6
0.3
0.3
0.3
s
tEHQV3
Erase Duration (Param)
2,5
0.3
0.3
0.3
s
tEHQV4
Erase Duration(Main)
2,5
0.6
0.6
0.6
s
tQVVL
VPP Hold from Valid SRD
5,8
0
0
0
ns
tQVPH
RP# VHH Hold from
Valid SRD
6,8
0
0
0
ns
tPHBR
Boot-Block Lock Delay
7,8
40
200
100
100
ns
SEE NEW DESIGN RECOMMENDATIONS
E
4.7
2-MBIT SmartVoltage BOOT BLOCK FAMILY
AC Characteristics—CE#-Controlled Write Operations(1, 12)—Commercial
(Continued)
Prod
Sym
Parameter
VCC
BV-80
3.3 ± 0.3V(9)
Load
Notes
50 pF
Min
Max
BV-120
5V±10%(11)
3.3 ± 0.3V(9)
100 pF
Min
Max
50 pF
Min
Max
5V±10%(11) Unit
100 pF
Min
Max
tAVAV
Write Cycle Time
150
80
180
120
ns
tPHEL
RP# High Recovery to
CE# Going Low
0.8
0.45
0.8
0.45
µs
tWLEL
WE# Setup to CE# Going
Low
0
0
0
0
ns
tPHHEH
Boot Block Lock Setup to
CE# Going High
6,8
200
100
200
100
ns
tVPEH
VPP Setup to CE# Going
High
5,8
200
100
200
100
ns
tAVEH
Address Setup to CE#
Going High
3
120
50
150
50
ns
tDVEH
Data Setup to CE# Going
High
4
120
50
150
50
ns
tELEH
CE# Pulse Width
120
50
150
50
ns
tEHDX
Data Hold Time from CE#
High
4
0
0
0
0
ns
tEHAX
Address Hold Time from
CE# High
3
0
0
0
0
ns
tEHWH
WE # Hold Time from
CE# High
0
0
0
0
ns
tEHEL
CE# Pulse Width High
30
30
30
30
ns
tEHQV1
Duration of Word/Byte
Programming Operation
2,5
6
6
6
6
µs
tEHQV2
Erase Duration (Boot)
2,5,6
0.3
0.3
0.3
0.3
s
tEHQV3
Erase Duration (Param)
2,5
0.3
0.3
0.3
0.3
s
tEHQV4
Erase Duration(Main)
2,5
0.6
0.6
0.6
0.6
s
tQVVL
VPP Hold from Valid SRD
5,8
0
0
0
0
ns
tQVPH
RP# VHH Hold from
Valid SRD
6,8
0
0
0
0
ns
tPHBR
Boot-Block Lock Delay
7,8
200
SEE NEW DESIGN RECOMMENDATIONS
100
200
100
ns
41
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
NOTES:
See AC Characteristics—WE#-Controlled Write Operations for notes 1 through 11.
12. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE# in systems where
CE# defines the write pulse-width (within a longer WE# timing waveform), all set-up, hold and inactive WE# times should
be measured relative to the CE# waveform.
1
VIH
2
3
AIN
ADDRESSES (A)
VIL
VIH
4
5
6
AIN
t AVAV
t AVEH
t EHAX
WE# (W)
VIL
OE# (G)
VIH
t WLEL
tEHWH
VIL
t
VIH
t EHQV1,2,3,4
EHEL
CE# (E)
VIL
VIH
DATA (D/Q)
High Z
VIL
6.5V
RP# (P)
VHH
t PHEL
t ELEH
t DVEH
t EHDX
DIN
DIN
Valid
SRD
tPHHEH
tQVPH
t VPEH
t QVVL
DIN
VIH
VIL
VIH
WP#
VIL
VPPH 2
VPPH1
V (V) V
PP
PPLK
VIL
NOTES:
1. VCC Power-Up and Standby.
2. Write program or Erase Set-Up Command.
3. Write Valid Address and Data (Program) or Erase Confirm Command.
4. Automated Program or Erase Delay.
5. Read Status Register Data.
6. Write Read Array Command.
0530_18
Figure 18. Alternate AC Waveforms for Write Operations (CE#–Controlled Writes)
42
SEE NEW DESIGN RECOMMENDATIONS
E
4.8
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Erase and Program Timings—Commercial
TA = 0 °C to +70 °C
5 V ± 10%
VPP
12 V ± 5%
3.3 ± 0.3 V
5 V ± 10%
3.3 ± 0.3 V
5 V ± 10%
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Unit
Boot/Parameter Block Erase Time
0.84
7
0.8
7
0.44
7
0.34
7
s
Main Block Erase Time
2.4
14
1.9
14
1.3
14
1.1
14
s
Main Block Program Time (Byte)
1.7
1.8
1.6
1.2
s
Main Block Program Time (Word)
1.1
0.9
0.8
0.6
s
Byte Program Time
10
10
8
8
µs
Word Program Time
13
13
8
8
µs
VCC
Parameter
NOTES:
1. All numbers are sampled, not 100% tested.
2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of VCC and VPP. See Note 3 for typical conditions.
3. Typical conditions are +25 °C with VCC and VPP at the center of the specified voltage range. Production programming using
VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.
4. Contact your Intel representative for information regarding maximum byte/word program specifications.
4.9
Extended Operating Conditions
Table 11. Extended Temperature and VCC Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
–40
+85
°C
TA
Operating Temperature
VCC
3.3 V VCC Supply Voltage (± 0.3 V)
1
3.0
3.6
Volts
5 V VCC Supply Voltage (10%)
2
4.50
5.50
Volts
NOTES:
1. AC specifications are valid at both voltage ranges. See DC Characteristics tables for voltage range-specific specifications.
2. 10% VCC specifications apply to 80 ns and 120 ns versions in their standard test configuration.
SEE NEW DESIGN RECOMMENDATIONS
43
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.9.1
APPLYING VCC VOLTAGES
required. If VCC ramps faster than 1V/100 µs (0.01
V/µs), then a delay of 2 µs is required before
initiating device operation. RP# = GND is
recommended during power-up to protect against
spurious write signals when VCC is between VLKO
and VCCMIN.
When applying VCC voltage to the device, a delay
may be required before initiating device operation,
depending on the VCC ramp rate. If VCC ramps
slower than 1V/100 µs (0.01 V/µs) then no delay is
VCC Ramp Rate
Required Timing
≤ 1V/100 µs
No delay required.
> 1V/100 µs
A delay time of 2 µs is required before any device operation is initiated, including read
operations, command writes, program operations, and erase operations. This delay is
measured beginning from the time VCC reaches VCCMIN ( 3.0 V for 3.3 ± 0.3 V operation;
and 4.5 V for 5 V operation).
NOTES:
1. These requirements must be strictly followed to guarantee all other read and write specifications.
2. To switch between 3.3 V and 5 V operation, the system should first transition VCC from the existing voltage range to GND,
and then to the new voltage. Any time the VCC supply drops below VCCMIN, the chip may be reset, aborting any operations
pending or in progress.
3. These guidelines must be followed for any VCC transition from GND.
4.10
Capacitance
TA = 25 °C, f = 1 MHz
Note
Typ
Max
Unit
CIN
Symbol
Input Capacitance
Parameter
1
6
8
pF
VIN = 0V
Conditions
COUT
Output Capacitance
1
10
12
pF
VOUT = 0V
NOTE:
1. Sampled, not 100% tested.
44
SEE NEW DESIGN RECOMMENDATIONS
E
4.11
Sym
2-MBIT SmartVoltage BOOT BLOCK FAMILY
DC Characteristics—Extended Temperature Operations
Parameter
Prod
TBV-80
TBV-80
TBE-120
VCC
3.3 ± 0.3 V
5 V ± 10%
Typ
Typ
Notes
Max
Unit
Test Conditions
Max
IIL
Input Load Current
1
± 1.0
± 1.0
µA
VCC = VCCMax
VIN = VCC or GND
ILO
Output Leakage Current
1
± 10
± 10
µA
VCC = VCC Max
VIN = VCC or GND
ICCS
VCC Standby Current
150
µA
CMOS Levels
VCC = VCC Max
1,3
60
110
70
CE# = RP# = WP# =
VCC ± 0.2 V
0.4
1.5
0.8
2.5
mA
TTL Levels
VCC = VCC Max
CE# = RP# = BYTE#
= VIH
ICCD
VCC Deep Power-Down
Current
ICCR
VCC Read Current for
Word or Byte
1
0.2
8
0.2
8
µA
1,5,6
15
30
50
65
mA
15
30
55
70
mA
SEE NEW DESIGN RECOMMENDATIONS
VCC = VCC Max
VIN = VCC or GND
RP# = GND ± 0.2 V
CMOS INPUTS
VCC = VCC Max
CE = VIL
f = 10 MHz (5 V)
5 MHz (3.3 V)
IOUT = 0 mA
Inputs = GND ± 0.2 V
or VCC ± 0.2 V
TTL INPUTS
VCC = VCC Max
CE# = VIL
f = 10 MHz (5 V)
5 MHz (3.3 V)
IOUT = 0 mA
Inputs = VIL or VIH
45
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.11
Sym
ICCW
ICCE
DC Characteristics—Extended Temperature Operations (Continued)
Parameter
VCC Program Current
for Word or Byte
VCC Erase Current
Prod
TBV-80
TBV-80
TBE-120
VCC
3.3 ± 0.3 V
5 V ± 10%
Note
Typ
Max
Typ
Max
1,4
13
30
30
10
25
13
1,4
Unit
Test Conditions
50
mA
30
45
mA
30
22
45
mA
10
25
18
40
mA
VPP = VPPH1 (at 5 V)
Program in Progress
VPP = VPPH2 (at 12 V)
Program in Progress
VPP = VPPH1 (at 5 V)
Block Erase in
Progress
VPP = VPPH2 (at 12 V)
Block Erase in
Progress
ICCES
VCC Erase Suspend
Current
1,2
3
8.0
5
12.0
mA
CE# = VIH
Block Erase Suspend
VPP = VPPH1 (at 5 V)
IPPS
VPP Standby Current
1
±5
± 15
±5
± 15
µA
VPP < VPPH2
IPPD
VPP Deep Power-Down
Current
VPP Read Current
1
0.2
10
0.2
10
µA
RP# = GND ± 0.2 V
1
50
200
50
200
µA
VPP ≥ VPPH2
1,4
13
30
13
30
mA
VPP = VPPH1 (at 5 V)
8
25
8
25
mA
VPP = VPPH2 (at 12 V)
13
30
15
25
mA
8
25
10
20
mA
50
200
50
200
µA
VPP = VPPH1 (at 5 V)
Block Erase in
Progress
VPP = VPPH2 (at 12 V)
Block Erase in
Progress
VPP = VPPH
Block Erase Suspend
in Progress
RP# = VHH
VPP = 12 V
IPPR
IPPW
IPPE
VPP Program Current
for Word or Byte
VPP Erase Current
1,4
IPPES
VPP Erase Suspend
Current
IRP#
RP# Boot Block Unlock
Current
1,4
500
500
µA
IID
A9 Intelligent Identifier
Current
1,4
500
500
µA
46
1
A9 = VID
SEE NEW DESIGN RECOMMENDATIONS
E
4.11
Sym
2-MBIT SmartVoltage BOOT BLOCK FAMILY
DC Characteristics—Extended Temperature Operations (Continued)
Parameter
Prod
TBV-80
TBV-80
TBE-120
VCC
3.3 ± 0.3 V
5 V ± 10%
Typ
Max
Typ
Max
Notes
Unit
Test Conditions
VID
A9 Intelligent Identifier
Voltage
11.4
12.6
11.4
12.6
V
VIL
Input Low Voltage
–0.5
0.8
–0.5
0.8
V
VIH
Input High Voltage
2.0
VCC
±
0.5V
2.0
VCC
±
0.5V
V
VOL
Output Low Voltage
0.45
V
VCC = VCC Min
IOL = 5.8 mA (5 V)
2 mA (3.3 V)
VPP = 12V
VOH1
Output High Voltage (TTL)
2.4
2.4
V
VOH2
Output High Voltage
0.85
×
VCC
0.85
×
VCC
V
VCC = VCC Min
IOH = –2.5 mA
VCC = VCC Min
IOH = –2.5 mA
VCC–
VCC–
V
VCC = VCC Min
IOH = –100 µA
0.4V
0.4V
0.45
(CMOS)
VPP Lock-Out Voltage
0.0
1.5
0.0
1.5
V
Complete Write
Protection
VPPH1 VPP during Program/Erase
4.5
5.5
4.5
5.5
V
VPP at 5 V
VPPH2 Operations
11.4
12.6
11.4
12.6
V
VPP at 12 V
VPPLK
VLKO
VCC Program/Erase
Lock Voltage
VHH
RP# Unlock Voltage
3
8
2.0
11.4
2.0
12.6
11.4
V
12.6
V
VPP = 12 V
Boot Block Program/
Erase
SEE NEW DESIGN RECOMMENDATIONS
47
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, T = +25 °C. These currents are valid for all
product versions (packages and speeds).
2. ICCES is specified with device de-selected. If device is read while in erase suspend, current draw is sum of ICCES and ICCR.
3. Block erases and word/byte programs inhibited when VPP = VPPLK, and not guaranteed in the range between VPPH1 and
VPPLK.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces ICCR to less than 1 mA typical, in static operation.
6. CMOS Inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.
7. For the 28F002B address pin A10 follows the COUT capacitance numbers.
8. For all BV/CV parts, VLKO = 2.0 V for 3.3 V and 5.0 V operations.
3.0
INPUT
1.5
TEST POINTS
OUTPUT
1.5
0.0
0530_12
NOTE:
AC test inputs are driven at 3.0 V for a logic “1” and 0.0 V for a logic “0.” Input timing begins, and output timing ends, at 1.5 V.
Input rise and fall times (10% to 90%) <10 ns.
Figure 19. 3.3 V Input Range and Measurement Points
2.4
2.0
2.0
INPUT
OUTPUT
TEST POINTS
0.8
0.45
0.8
0530_13
NOTE:
AC test inputs are driven at VOH (2.4 VTTL) for a logic “1” and VOL (0.45 VTTL) for a logic “0.” Input timing begins at VIH (2.0 VTTL)
and VIL (0.8 VTTL). Output timing ends at VIH and VIL. Input rise and fall times (10% to 90%) < 10 ns.
Figure 20. 5 V Input Range and Measurement Points
VCC
Test Configuration Component Values
Test Configuration
R1
DEVICE
UNDER
TEST
OUT
CL
CL (pF) R1 (Ω) R2 (Ω)
3.3 V Standard Test
50
990
770
5 V Standard Test
100
580
390
NOTE: CL includes jig capacitance.
R2
0530_14
NOTE: See table for component values.
Figure 21. Test Configuration
48
SEE NEW DESIGN RECOMMENDATIONS
E
4.12
2-MBIT SmartVoltage BOOT BLOCK FAMILY
AC Characteristics—Read Only Operations(1)—Extended Temperature
Symbol
Parameter
Prod
TBV-80
TBV-80
TBE-120
VCC
3.3 ± 0.3 V(5)
5 V ± 10%(6)
Load
50 pF
100 pF
Notes
Min
Max
110
Min
Unit
Max
tAVAV
Read Cycle Time
tAVQV
Address to Output Delay
tELQV
CE# to Output Delay
tPHQV
RP# to Output Delay
tGLQV
OE# to Output Delay
2
tELQX
CE# to Output in Low Z
3
tEHQZ
CE# to Output in High Z
3
tGLQX
OE# to Output in Low Z
3
tGHQZ
OE# to Output in High Z
3
tOH
Output Hold from Address, CE#,
or OE# Change, Whichever
Occurs First
3
0
0
ns
tELFL
tELFH
CE# Low to BYTE# High or Low
3
0
0
ns
tAVFL
Address to BYTE# High or Low
3
5
5
ns
tFLQV
BYTE# to Output Delay
3,4
110
80
ns
30
ns
2
80
ns
110
80
ns
110
80
ns
0.8
0.45
µs
65
40
ns
0
0
45
0
ns
25
0
45
ns
ns
25
ns
tFHQV
tFLQZ
BYTE# Low to Output in High Z
3
tPLPH
Reset Pulse Width
7
tPLQZ
RP# Low to Output High-Z
45
150
60
150
ns
60
ns
NOTES:
1. See AC Input/Output Reference Waveform for timing measurements.
2. OE# may be delayed up to tCE–tOE after the falling edge of CE# without impact on tCE.
3. Sampled, but not 100% tested.
4. tFLQV, BYTE# switching low to valid output delay will be equal to tAVQV, measured from the time DQ15/A–1 becomes valid.
5. See Test Configuration (Figure 21), 3.6 V and 3.3 ± 0.3 V Standard Test component values.
6. See Test Configuration (Figure 21), 5 V Standard Test component values.
7. The specification tPLPH is the minimum time that RP# must be held low in order to product a valid reset of the device.
SEE NEW DESIGN RECOMMENDATIONS
49
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.13
AC Characteristics—WE#-Controlled Write Operations(1)—
Extended Temperature
Sym
Parameter
Prod
TBV-80
TBV-80
TBE-120
VCC
3.3 ±0.3 V(9)
5 V±10%(10)
Load
50 pF
100 pF
Notes
50
Min
Max
Min
Unit
Max
tAVAV
Write Cycle Time
110
80
ns
tPHWL
RP# High Recovery to WE# Going Low
0.8
0.45
µs
tELWL
CE# Setup to WE# Going Low
0
0
ns
tPHHWH
Boot Block Lock Setup to WE# Going High
6,8
200
100
ns
tVPWH
VPP Setup to WE# Going High
5,8
200
100
ns
tAVWH
Address Setup to WE# Going High
3
90
60
ns
tDVWH
Data Setup to WE# Going High
4
70
60
ns
tWLWH
WE# Pulse Width
90
60
ns
tWHDX
Data Hold Time from WE# High
4
0
0
ns
tWHAX
Address Hold Time from WE# High
3
0
0
ns
tWHEH
CE# Hold Time from WE# High
0
0
ns
tWHWL
WE# Pulse Width High
20
20
ns
tWHQV1
Word/Byte Program Time
tWHQV2
Erase Duration (Boot)
tWHQV3
2,5,8
6
6
µs
2,5,6,8
0.3
0.3
s
Erase Duration (Param)
2,5,8
0.3
0.3
s
tWHQV4
Erase Duration (Main)
2,5,8
0.6
0.6
s
tQVVL
VPP Hold from Valid SRD
5,8
0
0
ns
tQVPH
RP# VHH Hold from Valid SRD
6,8
0
0
ns
tPHBR
Boot-Block Lock Delay
7,8
200
100
ns
SEE NEW DESIGN RECOMMENDATIONS
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
NOTES:
1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC
Characteristics during read mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally
which includes verify and margining operations.
3. Refer to command definition table for valid AIN. (Table 7)
4. Refer to command definition table for valid DIN. (Table 7)
5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1)
6. For boot block program/erase, RP# should be held at VHH or WP# should be held at VIH until operation completes
successfully.
7. Time tPHBR is required for successful locking of the boot block.
8. Sampled, but not 100% tested.
9. See Test Configuration (Figure 21), 3.6 V and 3.3 ± 0.3 V Standard Test component values.
10. See Test Configuration (Figure 21), 5 V Standard Test component values.
SEE NEW DESIGN RECOMMENDATIONS
51
2-MBIT SmartVoltage BOOT BLOCK FAMILY
4.14
AC Characteristics—CE#-Controlled Write Operations(1, 11)—
Extended Temperature
Sym
Parameter
E
Prod
TBV-80
TBV-80
TBE-120
VCC
3.3 ±0.3 V(9)
5 V±10%(10)
Load
50 pF
100 pF
Notes
Min
Max
Min
Unit
Max
tAVAV
Write Cycle Time
110
80
ns
tPHEL
RP# High Recovery to CE# Going Low
0.8
0.45
µs
tWLEL
WE# Setup to CE# Going Low
0
0
ns
tPHHEH
Boot Block Lock Setup to CE# Going High
6,8
200
100
ns
tVPEH
VPP Setup to CE# Going High
5,8
200
100
ns
tAVEH
Address Setup to CE# Going High
90
60
ns
tDVEH
Data Setup to CE# Going High
3
70
60
ns
tELEH
CE# Pulse Width
4
90
60
ns
tEHDX
Data Hold Time from CE# High
0
0
ns
tEHAX
Address Hold Time from CE# High
4
0
0
ns
tEHWH
WE# Hold Time from CE# High
3
0
0
ns
tEHEL
CE# Pulse Width High
20
20
ns
tEHQV1
Word/Byte Program Time
2,5
6
6
µs
tEHQV2
Erase Duration (Boot)
2,5,6
0.3
0.3
s
tEHQV3
Erase Duration (Param)
2,5
0.3
0.3
s
tEHQV4
Erase Duration (Main)
2,5
0.6
0.6
s
tQVVL
VPP Hold from Valid SRD
5,8
0
0
ns
tQVPH
RP# VHH Hold from Valid SRD
6,8
0
0
ns
tPHBR
Boot-Block Lock Delay
7,8
200
100
ns
NOTES:
See AC Characteristics—WE#-Controlled Write Operations for notes 1 through 10.
11. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE# in systems where CE#
defines the write pulse-width (within a longer WE# timing waveform), all set-up, hold and inactive WE# times should be
measured relative to the CE# waveform.
52
SEE NEW DESIGN RECOMMENDATIONS
E
4.15
2-MBIT SmartVoltage BOOT BLOCK FAMILY
Erase and Program Timings—Extended Temperature
TA = –40 °C to +85 °C
5 V ± 10%
VPP
12 V ± 5%
3.3 ± 0.3 V
5 V ± 10%
3.3 ± 0.3 V
5 V ± 10%
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Unit
Boot/Parameter Block Erase Time
0.84
7
0.8
7
0.44
7
0.34
7
s
Main Block Erase Time
2.4
14
1.9
14
1.3
14
1.1
14
s
Main Block Program Time (Byte)
1.7
1.4
1.6
1.2
s
Main Block Program Time (Word)
1.1
0.9
0.8
0.6
s
Byte Program Time
10
10
8
8
µs
Word Program Time
13
13
8
8
µs
VCC
Parameter
NOTES:
1. All numbers are sampled, not 100% tested.
2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of VCC and VPP. See Note 3 for typical conditions.
3. Typical conditions are +25 °C with VCC and VPP at the center of the specified voltage range. Production programming using
VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.
4. Contact your Intel representative for information regarding maximum byte/word program specifications.
SEE NEW DESIGN RECOMMENDATIONS
53
E
2-MBIT SmartVoltage BOOT BLOCK FAMILY
5.0
ORDERING INFORMATION
T E 2 8 F 2 0 0 CV - T 8 0
Operating Temperature
T = Extended Temp
Blank = Commercial Temp
(ns)
Access Speed
BV/CV:VCC = 5V
T =Top Boot
B =Bottom Boot
Package
E = TSOP
PA = 44-Lead PSOP
TB = Ext. Temp 44-Lead PSOP
(VPP/VCC)
Voltage Options
V = (5 or 12 / 3.3 or 5)
Product line designator
for all Intel Flash products
Architecture
B = Boot Block
C = Compact 48-Lead TSO
Boot Block
Density / Organization
00X = x8-only (X = 1, 2, 4, 8)
X00= x8/x16 Selectable (X = 2, 4, 8)
0530_23
VALID COMBINATIONS:
Commercial
Extended
40-Lead TSOP
E28F002BVT60
E28F002BVB60
E28F002BVT80
E28F002BVB80
E28F002BVT120
E28F002BVB120
TE28F002BVT80
TE28F002BVB80
44-Lead PSOP
PA28F200BVT60
PA28F200BVB60
PA28F200BVT80
PA28F200BVB80
PA28F200BVT120
PA28F200BVB120
TB28F200BVT80
TB28F200BVB80
48-Lead TSOP
E28F200CVT60
E28F200CVB60
E28F200CVT80
E28F200CVB80
56-Lead TSOP
E28F200BVT60
E28F200BVB60
E28F200BVT80
E28F200BVB80
TE28F200CVT80
TE28F200CVB80
TE28F200BVT80
TE28F200BVB80
Summary of Line Items
VCC
Name
VPP
3.3 V
5V
5V
12 V
28F002BV
√
√
√
√
28F200BV
√
√
√
√
28F200CV
√
√
√
√
54
2.7 V
40-Ld 44-Ld 48-Ld 56-Ld
0 °C –
–40 °C –
TSOP PSOP TSOP TSOP
+70 °C
+85 °C
√
√
√
√
√
√
√
√
√
√
SEE NEW DESIGN RECOMMENDATIONS
E
6.0
2-MBIT SmartVoltage BOOT BLOCK FAMILY
ADDITIONAL INFORMATION
Related Intel Information(1,2)
Order
Number
Document
290530
4-Mbit SmartVoltage Boot Block Flash Memory Family Datasheet
290539
8-Mbit SmartVoltage Boot Block Flash Memory Family Datasheet
290599
Smart 5 Boot Block Flash Memory Family 2, 4, 8 Mbit Datasheet
290580
Smart 3 Advanced Boot Block 4-Mbit, 8-Mbit, 16-Mbit Flash Memory Family Datasheet
292200
AP-642 Designing for Upgrade to Smart 3 Advanced Boot Block Flash Memory
292172
AP-617 Additional Flash Data Protection Using VPP, RP#, and WP#
292148
AP-604 Using Intel’s Boot Block Flash Memory Parameter Blocks to Replace EEPROM
292194
AB-65 Migrating SmartVoltage Boot Block Flash Designs to Smart 5 Flash
297612
28F200BV/CV 28F002BV Specification Update
NOTES:
1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should
contact their local Intel or distribution sales office.
2. Visit Intel’s World Wide Web home page at http://www.Intel.com for technical documentation and tools.
SEE NEW DESIGN RECOMMENDATIONS
55
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