SEMICONDUCTOR E35A2CS, E35A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 Repetitive Peak Reverse Voltage : VRRM=200V. D1 Average Forward Current : IO=35A. E MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 200 V Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 450 (50Hz) A Tj -40 150 Tstg -40 150 Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DIM A1 A2 A3 B1 B2 C1 C2 D1 G F MILLIMETERS _ 0.3 10.0 + _ 0.3 13.5 + _ 0.5 24.0 + _ 0.3 8.5 + _ 0.3 10.0 + _ 0.3 2.0 + _ 0.3 5.0 + _ 0.3 2.5 + DIM D2 D3 E F G H T C2 T E35A2CR (- Type) C1 E35A2CS (+ Type) H POLARITY MILLIMETERS _ 0.3 5.0 + _ 0.3 4.5 + _ 0.3 1.9 + _ 0.3 9.0 + _ 0.3 1.0 + _ 0.5 4.4 + _ 0.3 0.6 + MR ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A - - 1.05 V Repetitive Peak Reverse Current IRRM VRRM=200V - - 50 A Reverse Recovery Time trr IF=0.1A, IR=0.1A - - 15 S Temperature Resistance Rth DC total junction to case - - 1.0 /W 2002. 10. 9 Revision No : 2 1/2 E35A2CS, E35A2CR 2002. 10. 9 Revision No : 2 2/2