SEMICONDUCTOR E50A2CBS, E50A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ·Average Forward Current : IO=50A. ·Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS E50A2CBR (+ Type) (- Type) K H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC E I SYMBOL RATING UNIT Average Forward Current IF(AV) 50 A Peak 1 Cycle Surge Current IFSM 380 (60Hz) A Repetitive Peak Revese Voltage VRRM 200 V Tj -40～215 ℃ Tstg -40～215 ℃ Junction Temperature Storage Temperature Range DIM A B C D E F G H I J K MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 _ 0.04 Φ1.3 + _ 0.2 4.2+ _ 0.2 8.0 + TYP 0.5 _ 0.2 Φ10.0 + _ 0.1x45 0.4+ 8.5 MAX 0.2+0.1 _ 0.5 28.35+ J D F G B B-PF ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 1.05 V 200 - - V Forward Voltage VF IFM=100A Reverse Voltage VR IR=5mA Reverse Current IR VR=200V - - 50 μA ΔVF IFM=100A, IM=100mA, Pw=100ms - - 80 mV HIR Ta=150℃, VR=200V - - 2.5 mA Reverse Recovery Time trr IF=100mA, IR=100mA - - 15 μs Temperature Resistance Rth DC total Junction to case - - 0.6 ℃/W Transient Thermal Resistance Reverse Leakage Current Under High Temperature 2002. 4. 9 Revision No : 2 1/1