EC4305C Ordering number : ENA0874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4305C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS --30 ±20 V V ID --200 mA mA Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --800 Allowable Power Dissipation PD Mounted on a glass-epoxy printed circuit board (145✕80✕1.6mm) 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --30 V VDS=--30V, VGS=0V --1 µA ±10 µA IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--100µA --1.2 ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--100mA 150 ID=--100mA, VGS=--10V 1.4 1.9 Ω RDS(on)2 Ciss ID=--50mA, VGS=--4V 2.8 4.0 Ω VDS=--10V, f=1MHz 22 pF Output Capacitance Coss VDS=--10V, f=1MHz 6.0 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 3.5 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance --2.6 250 V mS Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1407PE TI IM TC-00001005 No. A0874-1/4 EC4305C Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min typ Unit max td(on) tr See specified Test Circuit. 34 ns See specified Test Circuit. 59 ns td(off) tf See specified Test Circuit. 435 ns See specified Test Circuit. 250 ns 1.6 nC 0.5 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--200mA VDS=--10V, VGS=--10V, ID=--200mA VDS=--10V, VGS=--10V, ID=--200mA Diode Forward Voltage VSD IS=--200mA, VGS=0V Package Dimensions 0.1 --0.86 Type No. Indication nC --1.2 V Electrical Connection unit : mm (typ) 7036-001 Polarity mark (Top) Top View AL 0.8 Gate Drain 3 4 1.0 Top view Source *Electrodes : on the bottom Top view Polarity mark (Top) 2 1 Polarity Discriminating Mark 0.6 Drain Gate Source 0.5 0.3 0.2 2 4 3 1 : Gate 2 : Source 3 : Drain 4 : Drain 0.6 1 SANYO : ECSP1008-4 Bottom View Switching Time Test Circuit VDD= --15V VIN 0V --10V ID= --100mA RL=150Ω VOUT VIN D PW=10µs D.C.≤1% Rg G P.G EC4305C 50Ω S Rg=5kΩ No. A0874-2/4 EC4305C ID -- VDS --160 --140 --120 --2.5V --100 --80 --60 --120 --100 --80 --60 --20 --25 °C VGS= --2.0V --20 Ta= 7 --40 --40 --2.0 --2.5 0 0 --0.1 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 8 7 6 5 --100mA 4 ID= --50mA 2 --3.0 --3.5 --4.0 IT11210 RDS(on) -- Ta 6 9 --1.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 3 --0.5 IT11209 RDS(on) -- VGS 10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --140 2 5°C 5°C --15 .0 Drain Current, ID -- mA --160 VDS= --10V --180 Drain Current, ID -- mA V -10.0V --180 ID -- VGS --200 --6. -8.0V 0V --4 .0V --200 5 4 A --50m , I D= --4V 3 = VGS 2 mA = --100 --10V, I D = V GS 1 1 0 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 5 ⏐yfs⏐ -- ID 2 C 5° 100 ° 75 7 25 C °C 5 3 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 Drain Current, ID -- A 5 7 --1.0 IT11213 40 60 80 100 120 140 160 IT11212 VGS=0V --0.1 7 5 3 2 --0.01 7 5 3 2 --0.0001 --0.2 td(off) 2 100 7 --1.0 --1.2 IT11214 f=1MHz Ciss tf 3 --0.8 3 Ciss, Coss, Crss -- pF 5 --0.6 Ciss, Coss, Crss -- VDS 5 VDD= --15V VGS= --10V 7 --0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 Switching Time, SW Time -- ns 20 --0.001 7 5 3 2 2 10 --0.001 0 IS -- VSD --1.0 7 5 3 2 3 --2 --20 Ambient Temperature, Ta -- °C VDS= --10V = Ta --40 IT11211 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- mS 7 0 --60 --16 C --6 --25° --4 25°C --2 Ta= 75° C 0 tr 2 10 7 Coss 5 Crss 3 5 td(on) 2 3 2 --0.01 1.0 2 3 5 7 --0.1 2 Drain Current, ID -- A 3 5 7 IT11215 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT11216 No. A0874-3/4 EC4305C VGS -- Qg --10 Allowable Power Dissipation, PD -- W Gate-to-Source Voltage, VGS -- V --9 PD -- Ta 0.20 VDS= --10V ID= --200mA --8 --7 --6 --5 --4 --3 --2 --1 Mounted on a glass-epoxy printed circuit board (145✕80✕1.6mm) 0.15 0.10 0.05 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT11217 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12737 Note on usage : Since the EC4305C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice. PS No. A0874-4/4