ECH8310 Ordering number : ENA1430A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8310 General-Purpose Switching Device Applications Features • • • 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Unit --30 V ±20 V --9 A --60 A 1.5 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7011A-002 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8310-TL-H Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 5 JM 4 1 0.65 0.9 0.25 2.3 Lot No. TL 0.3 Electrical Connection 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 0 t o 0.02 Bot t om View SANYO : ECH8 8 7 6 5 1 2 3 4 http://semicon.sanyo.com/en/network 60612 TKIM/O1409PE TK IM TC-00002092 No. A1430-1/7 ECH8310 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min typ ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --30 VDS=--10V, ID=--1mA VDS=--10V, ID=--4.5A --1.2 Unit max V --1 μA ±10 μA --2.6 12 ID=--4.5A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4.0V V S 9 13 17 mΩ 12 20 28 mΩ 23 32.5 mΩ 13.5 1400 pF 350 pF Crss 250 pF Turn-ON Delay Time td(on) 10 ns Rise Time tr 45 ns Turn-OFF Delay Time td(off) 134 ns Fall Time tf 87 ns Total Gate Charge Qg 28 nC Gate-to-Source Charge Qgs 4 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--9A 6 IS=--9A, VGS=0V --0.8 nC --1.2 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --4.5A RL=3.3Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8310 P.G 50Ω S Ordering Information Device ECH8310-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1430-2/7 ECH8310 ID -- VDS --4 --3 --5 --4 --3 --2 --2 --1 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 80 --0.9 0 --1.0 --25°C --5 --6 25° C 2.5V V GS= -- Ta=7 5°C --6 Drain Current, ID -- A --7 --6.0 V Drain Current, ID -- A --7 VDS= --10V --8 --4.5 --8 ID -- VGS --9 --4.0 V V --3.5 V --10.0V--8.0V --9 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V IT15075 RDS(on) -- Ta 40 --3.5 IT14478 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 40 30 20 10 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Ta 2 ° 25 1.0 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 C 75° C 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 2 0 20 40 60 80 100 120 IS -- VSD 140 160 IT14480 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Ciss, Coss, Crss -- VDS --0.9 --1.0 IT14482 f=1MHz 3 7 5 3 tr td(on) 10 --20 VGS=0V 5 tf 2 --40 Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V td(off) 100 5 --0.01 7 5 3 2 --0.001 --0.2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 10 IT14481 SW Time -- ID 3 15 Ambient Temperature, Ta -- °C 2 °C -25 = 20 2 3 A .0 = --2 , ID V 5 . = --4 VGS 4.5A I D= -, V 0 . = --10 VGS = VGS 0 --60 --16 VDS= --10V 10 7 5 25 IT14479 | yfs | -- ID 5 2.0A = -, ID V 0 . --4 --25 °C 50 30 C --4.5A 25° ID= --2A 60 35 Ta= 75° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 2 Ciss 1000 7 5 Coss 3 Crss 2 7 5 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 2 IT14483 100 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14484 No. A1430-3/7 ECH8310 VGS -- Qg VDS= --15V ID= --9A --8 --6 --4 --2 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 ASO 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 30 IT14485 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 IDP= --60A PW≤10μs 1m s 10 ID= --9A DC ms 10 0m s op era tio Operation in this area is limited by RDS(on). n( Ta = 25 °C ) --0.1 7 5 Ta=25°C 3 2 Single pulse 2 --0.01 When mounted on ceramic substrate (900mm ×0.8mm) --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 Drain-to-Source Voltage, VDS -- V IT14500 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14486 No. A1430-4/7 ECH8310 Embossed Taping Specification ECH8310-TL-H No. A1430-5/7 ECH8310 Outline Drawing ECH8310-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1430-6/7 ECH8310 Note on usage : Since the ECH8310 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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