ECH8315 Ordering number : ENA1387 SANYO Semiconductors DATA SHEET ECH8315 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --30 V ±20 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) --7.5 A --40 A Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V Forward Transfer Admittance VGS(off) | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--3.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--3.5A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Ratings min typ max --30 V VDS=--30V, VGS=0V VGS=±16V, VDS=0V Marking : JS --1.2 5 Unit --1 μA ±10 μA --2.6 8.4 V S 19 25 mΩ 31 44 mΩ 35 49 mΩ Continued on next page. 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If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network D2408PE MS IM TC-00001772 No. A1387-1/4 ECH8315 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min typ Unit max 875 pF 200 pF Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz 150 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.1 ns Rise Time tr td(off) See specified Test Circuit. 33 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge See specified Test Circuit. 92 tf Qg See specified Test Circuit. 60 ns VDS=--15V, VGS=--10V, ID=--7.5A 18 nC 2.1 nC 4.7 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--15V, VGS=--10V, ID=--7.5A VDS=--15V, VGS=--10V, ID=--7.5A Diode Forward Voltage VSD IS=--7.5A, VGS=0V Package Dimensions --0.82 8 7 6 5 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top View 0.25 2.9 0.15 5 2.3 2.8 0 t o 0.02 1 2 3 4 Top view 4 1 0.65 0.3 0.9 0.25 V Electrical Connection unit : mm (typ) 7011A-002 8 --1.2 0.07 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bot t om View Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --3.5A RL=4.3Ω VIN D PW=10μs D.C.≤1% VOUT G P.G ECH8315 50Ω S No. A1387-2/4 ECH8315 --3.5 --3.0 --2.5 --2.0 VGS= --2.5V --1.5 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 RDS(on) -- VGS ID= --2A --3.5A 50 40 30 20 10 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 1.0 7 5 5°C --2 °C 75 °C 25 3 --3.5 IT14299 A --2.0 I D= , V 4.0 A = ---2.0 VGS I D= , V .5 = --4 VGS --3.5A , I D= V 0 . 0 = --1 VGS 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT14301 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 3 --0.01 --0.2 5 7 --10 IT14302 Drain Current, ID -- A 7 tf 5 3 2 tr 10 --0.6 --0.8 --1.0 --1.2 IT14303 Ciss, Coss, Crss -- VDS 3 f=1MHz 2 Ciss, Coss, Crss -- pF td(off) 100 --0.4 Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V 2 1000 Ciss 7 5 3 2 Coss Crss td(on) 100 7 5 --0.1 --3.0 --10 7 5 2 0.1 7 --0.01 --2.5 Ambient Temperature, Ta -- °C Source Current, IS -- A = Ta 50 0 --60 --16 10 7 5 --2.0 60 2 2 2 --1.5 RDS(on) -- Ta 70 VDS= --10V 3 --1.0 IT14300 | yfs | -- ID 3 --0.5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 60 0 IT14298 --25°C --0.2 25°C --0.1 Ta=25°C Forward Transfer Admittance, | yfs | -- S --3 Ta=7 5°C 0 80 Switching Time, SW Time -- ns --4 --1 Drain-to-Source Voltage, VDS -- V 0 --5 --2 --1.0 --0.5 0 --6 --25° C --4.0 25° C --4.5 --7 5°C --5.0 --8 Ta= 7 --5.5 VDS= --10V --9 .0V --3 Drain Current, ID -- A Drain Current, ID -- A --6.0 ID -- VGS --10 --6. 0V --6.5 --4.5V --15.0V --10.0V --7.0 --4.0 V --3. 5V ID -- VDS --7.5 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 7 --10 IT14304 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14305 No. A1387-3/4 ECH8315 VGS -- Qg --10 VDS= --10V ID= --7.5A --9 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --100 7 5 3 2 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 16 18 IT14306 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --40A PW≤10μs 10 1m 0μs s 10 ms ID= --7.5A DC 10 0m s op era tio n( Operation in this area is limited by RDS(on). Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 IT14307 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14308 Note on usage : Since the ECH8315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1387-4/4