ECH8662 Ordering number : ENA1259A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8662 General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 40 V ±10 V 6.5 A PW≤10μs, duty cycle≤1% 40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8662-TL-H Top View 0.25 2.9 Packing Type : TL 8 TH 5 Lot No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 0 t o 0.02 0.25 Marking 0.15 Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 52312 TKIM/70908PE TIIM TC-00001419 No. A1259-1/7 ECH8662 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=40V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 VDS=10V, ID=3.5A 3.9 RDS(on)1 ID=3.5A, VGS=4.5V 23 30 mΩ RDS(on)2 ID=3.5A, VGS=4V 25 33 mΩ RDS(on)3 ID=1.5A, VGS=2.5V 30 42 mΩ Input Capacitance Ciss 1130 pF Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 77 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 60 pF Turn-ON Delay Time td(on) 14 ns Rise Time tr 34 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 40 See specified Test Circuit. VDS=20V, VGS=4.5V, ID=6.5A IS=6.5A, VGS=0V V 1 μA ±10 μA 1.3 6.5 V S 93 ns 55 ns 12 nC 2.2 nC 3.4 nC 0.85 1.2 V Switching Time Test Circuit 4.5V 0V VDD=20V VIN ID=3.5A RL=5.7Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8662 P.G 50Ω S Ordering Information Device ECH8662-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1259-2/7 ECH8662 ID -- VDS 4.0 3.5 1.5V 3.0 2.5 2.0 1.5 6 5 4 3 2 1.0 1 VGS=1.2V 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=1.5A 3.5A 36 27 18 9 0 0 1 2 3 4 5 6 7 .5A =1 I D 3.5A , .5V , I D= =2 .5A S .0V G =3 V =4 I , D S VG .5V =4 S VG 36 27 18 9 --40 --20 0 20 40 60 80 100 120 1.0 7 5 = Ta °C 25 -- °C 75 °C 3 2 25 0.1 7 5 3 2 140 160 IT13828 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0 5 7 10 IT13829 0.4 0.6 0.8 1.0 1.2 IT13830 Ciss, Coss, Crss -- VDS 3 VDD=20V VGS=4.5V 2 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 f=1MHz 2 Ciss 1000 td(off) 100 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 45 2 3 2 2.5 IT13826 Ambient Temperature, Ta -- °C VDS=10V 0.01 0.001 2 3 2.0 54 IT13827 | yfs | -- ID 1.5 RDS(on) -- Ta 0 --60 8 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 1.0 63 54 45 0.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 63 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 IT13825 Ta=7 5°C 25°C --25° C 0 10 7 5 25°C -25°C 4.5 7 Ta=7 5°C Drain Current, ID -- A 5.0 VDS=10V 8 Drain Current, ID -- A 5.5 ID -- VGS 9 1.8 V 6.0 2.5V 2.0V 8.0V 4.5V 4.0V 6.5 7 tf 5 3 tr 2 td(on) 5 3 2 100 Coss 7 Crss 5 10 7 0.1 7 3 2 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13831 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 40 IT13832 No. A1259-3/7 ECH8662 VGS -- Qg 5.0 VDS=20V ID=6.5A 4.5 4.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT13833 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO PW≤10μs IDP=40A 10 0μ s 1m s ID=6.5A 10m s DC 10 0m op s tio n( Operation in this Ta= area is limited by RDS(on). 25 °C ) era Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT13834 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.3 1.2 To t al 1.0 0.8 Di ss 1u nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13835 No. A1259-4/7 ECH8662 Embossed Taping Specification ECH8662-TL-H No. A1259-5/7 ECH8662 Outline Drawing ECH8662-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1259-6/7 ECH8662 Note on usage : Since the ECH8662 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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