ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET ECH8668 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Symbol Conditions N-channel VDSS VGSS ID IDP PD Channel Temperature PT Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% P-channel Unit 20 --20 V ±10 ±10 V 7.5 --5 A 40 --40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C W Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage ID=1mA, VGS=0V Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Cutoff Voltage VGS(off) VDS=10V, ID=1mA Zero-Gate Voltage Drain Current 20 VDS=20V, VGS=0V VGS=±8V, VDS=0V Marking : TP 0.5 V 1 μA ±10 μA 1.3 V Continued on next page. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2809PE TK IM TC-00002167 No. A1510-1/6 ECH8668 Continued from preceding page. Parameter Forward Transfer Admittance Symbol Ratings min Unit max VDS=10V, ID=4A ID=4A, VGS=4.5V RDS(on)2 RDS(on)3 Input Capacitance Ciss VDS=10V, f=1MHz 1060 pF Output Capacitance Coss VDS=10V, f=1MHz 180 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 135 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 17.5 ns See specified Test Circuit. 120 ns See specified Test Circuit. 68 ns Fall Time td(off) tf See specified Test Circuit. 80 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=7.5A 10.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=7.5A 2.1 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=7.5A 2.9 Diode Forward Voltage VSD IS=7.5A, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA RDS(on)1 ID=--3A, VGS=--4.5V 29 38 mΩ RDS(on)2 41 58 mΩ 64 98 mΩ Rise Time Turn-OFF Delay Time 4.2 typ RDS(on)1 Static Drain-to-Source On-State Resistance | yfs | Conditions 7 S 13 17 mΩ ID=2A, VGS=2.5V 18 26 mΩ ID=0.5A, VGS=1.8V 30 48 mΩ 0.74 nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance --20 V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--3A --0.4 4.9 --1.3 8.3 V S RDS(on)3 ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Input Capacitance Ciss VDS=--10V, f=1MHz 960 pF Output Capacitance Coss VDS=--10V, f=1MHz 180 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 140 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr See specified Test Circuit. 55 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 92 ns Fall Time tf See specified Test Circuit. 68 ns 11 nC Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=--10V, VGS=--4.5V, ID=--5A VDS=--10V, VGS=--4.5V, ID=--5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4.5V, ID=--5A 2.8 nC Diode Forward Voltage VSD IS=--5A, VGS=0V --0.82 --1.2 V No. A1510-2/6 ECH8668 Package Dimensions Electrical Connection unit : mm (typ) 7011A-001 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top View 0.25 2.9 0.15 8 5 2.3 2.8 0 t o 0.02 1 0.25 2 3 Top view 4 4 1 0.65 0.9 0.3 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bot t om View Switching Time Test Circuit [N-channel] VDD=10V VIN ID=4A RL=2.5Ω VIN D PW=10μs D.C.≤1% VOUT ECH8668 V 3.0 2.5 VGS=1.5V 2.0 1.5 5 4 3 2 1.0 0.5 0 6 1 0 0.1 0.2 0.3 0.4 Drain-to-Source Voltage, VDS -- V 0.5 IT12483 0 0 0.5 1.0 --25°C 3.0V 3.5 7 Ta=75 °C 4.0 [Nch] VDS=10V 9 Drain Current, ID -- A 4.5 S ID -- VGS 10 2.0 2.5V 4.0V 5.0 50Ω 8 6.0V 5.5 [Nch] 8.0V Drain Current, ID -- A 6.0 VOUT ECH8668 P.G S ID -- VDS 7.5 6.5 D PW=10μs D.C.≤1% G 50Ω 7.0 ID= --3A RL=3.33Ω VIN G P.G VDD= --10V VIN 0V --4V 25°C 4V 0V [P-channel] 1.5 2.0 Gate-to-Source Voltage, VGS -- V 2.5 IT12484 No. A1510-3/6 ECH8668 RDS(on) -- VGS 40 [Nch] RDS(on) -- Ta 40 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 30 ID=2A 25 4A 20 15 10 5 0 0 2 4 6 8 2A = V, I D 20 =2.5 VGS 15 =4A V, I D 0 . 4 = VGS I =4A 4.5V, D V GS= 10 5 --40 --20 0 20 40 60 80 100 120 140 160 IT12486 IS -- VSD 10 7 5 [Nch] VGS=0V 3 3 C 5° 2 = Ta 1.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Nch] 5 --2 °C 75 °C 25 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 1000 0.01 5 7 10 IT12487 Drain Current, ID -- A [Nch] 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=4V 7 0.9 1.0 IT12488 [Nch] f=1MHz 2 Ciss 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 25 Ambient Temperature, Ta -- °C VDS=10V 7 =4A , ID V 1 . =3 VGS IT12485 | yfs | -- ID 10 30 0 --60 10 Gate-to-Source Voltage, VGS -- V 35 Ta=7 5°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 2 td(off) 100 7 tf 5 tr 3 7 5 3 Coss Crss 2 100 td(on) 2 1000 7 10 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A [Nch] 7 5 3 2 VDS=10V ID=7.5A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 0 2 4 8 Total Gate Charge, Qg -- nC 9 10 11 IT12491 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 5 10 IT12489 VGS -- Qg 4.5 7 10 7 5 3 2 ASO 0.1 7 5 3 2 20 IT12490 [Nch] PW≤10μs 10 1m 0μs s IDP=40A ID=7.5A 10 DC ms 10 0m op s era tio 1.0 7 5 3 2 18 n( Ta =2 5° C) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT14781 No. A1510-4/6 ECH8668 [Pch] ID -- VGS --8 --2 --5 --4 --3 --2 --1 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V IT13073 RDS(on) -- VGS 140 --0.9 25° --1 VGS= --1.2V 0 C --25°C --1.5V --6 Ta= 75° C Drain Current, ID -- A --7 --3 0 [Pch] VGS= --10V 8V --1. --2.0 --2.5V --4.5V --8.0V Drain Current, ID -- A --4 V ID -- VDS --5 [Pch] IT13074 RDS(on) -- Ta 100 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 ID= --0.5A 80 --1.5A --3.0A 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V °C -25 = °C Ta 75 C 5° 1.0 2 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A SW Time -- ID 1000 --20 0 20 40 60 80 100 120 140 160 IT13076 IS -- VSD [Pch] VGS=0V --1.0 7 5 3 2 --0.1 7 5 5 [Pch] 3 2 td(off) 100 tf 7 5 3 tr 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 3 --1.2 IT13078 [Pch] f=1MHz 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --40 3 2 --0.01 5 7 --10 IT13077 VDD= --10V VGS= --4V 7 10 7 --0.01 20 3 2 2 0.1 --0.01 40 --10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Pch] 7 5 2 --1.5A , I D= --2.5V = V GS --3.0A V, I D= .5 4 -V GS= Ambient Temperature, Ta -- °C 10 3 60 0 --60 --8 VDS= --10V 2 A --0.5 ,I = --1.8V D = S VG IT13075 | yfs | -- ID 3 80 Ta= 75°C 25°C --25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 120 Ciss 1000 7 5 3 Coss Crss 2 td(on) 100 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT13079 7 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT13080 No. A1510-5/6 ECH8668 VGS -- Qg [Pch] --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC PD -- Ta 1.8 Allowable Power Dissipation, PD -- W --100 7 5 3 2 VDS= --10V ID= --5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 9 10 11 IT13081 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO [Pch] IDP= --40A PW≤10μs 10 0 1 m μs s 10 ID= --5A DC ms 10 op 0m s era tio n( Ta = 25 °C Operation in this area is limited by RDS(on). ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 IT13082 [Nch/Pch] When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13083 Note on usage : Since the ECH8668 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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