Photomicrosensor (Transmissive)
EE-SV3 Series
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available.
• Solder terminal models EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS
• PCB terminal models EE-SV3-B/-SV3-C/-SV3-D/-SV3-G
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25°C)
Center mark
Item
Emitter
Four,
R1
Four, 0.25
Four, R1
Two,
3.2±0.2 dia.
holes
Four, 1.5
Two,
3.2±0.2 dia.
holes
2.54±0.2
Cross section AA
Model
K
Aperture (a x b)
EE-SV3(-B)
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Terminal No.
Name
A
Anode
K
C
E
Dimensions
Cathode
Collector
Emitter
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
50 mA (see note 1)
Pulse forward
current
IFP
1 A (see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
100 mW (see note 1)
Operating
Topr
–25°C to 85°C
Storage
Tstg
–30°C to 100°C
Soldering temperature
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
C
E
Rated value
IF
Collector dissipation PC
Ambient
temperature
Unless otherwise specified, the
tolerances are as shown below.
A
Detector
2.54±0.2
Cross section AA
Internal Circuit
Four, 0.5
Symbol
Forward current
■ Ordering Information
Description
Aperture (a x b)
Photomicrosensor
(transmissive)
Model
2.1 x 0.5
EE-SV3(-B)
2.1 x 1.0
EE-SV3-C(S)
2.1 x 0.2
EE-SV3-D(S)
0.5 x 2.1
EE-SV3-G(S)
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
EE-SV3(-B)
Emitter
Detector
EE-SV3-D(S)
EE-SV3-G(S)
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 µA typ., 10 µA max.
VR = 4 V
Peak emission wavelength λP
940 nm typ.
Light current
IL
0.5 to 14 mA
Dark current
ID
2 nA typ., 200 nA max.
IF = 20 mA
1 to 28 mA
0.1 mA min.
0.5 to 14 mA
IF = 20 mA,
VCE = 10 V
VCE = 10 V,
0 lx
Leakage current
ILEAK
---
Collector–Emitter
saturated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
Peak spectral sensitivity
wavelength
λP
850 nm typ.
VCE = 10 V
VCC = 5 V,
RL = 100 Ω,
IL = 5 mA
Rising time
tr
4 µs typ.
Falling time
tf
4 µs typ.
224
EE-SV3-C(S)
Condition
Photomicrosensor (Transmissive) EE-SV3
---
Series
---
0.1 V typ.,
0.4 V max.
IF = 20 mA,
IL = 0.1 mA
■ Engineering Data
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Collector−Emitter voltage VCE (V)
VCC = 5 V
Ta = 25°C
IF = 20 mA
VCE = 10 V
Ta = 25°C
−
d
0
+
Center of optical axis
Distance d (mm)
Light current IL (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Center of optical axis
Sensing Position Characteristics
(EE-SV3-C(S))
IF = 20 mA
VCE = 10 V
Ta = 25°C
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Sensing Position Characteristics
(EE-SV3(-B))
Distance d (mm)
Relative light current IL (%)
Relative light current IL (%)
Sensing Position Characteristics
(EE-SV3-G(S))
IF = 20 mA
VCE = 5 V
Sensing Position Characteristics
(EE-SV3-D(S))
Load resistance RL (kΩ)
Ta = 25°C
VCE = 10 V
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (µs)
Response Time vs. Load Resistance Characteristics (Typical)
Ta = 70°C
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Relative light current IL (%)
Light current IL (mA)
Ta = 25°C
Ta = 25°C
Forward voltage VF (V)
Ambient temperature Ta (°C)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SV3(-B))
Ta = −30°C
Dark current ID (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Relative light current IL (%)
IF
Forward Current vs. Forward
Voltage Characteristics (Typical)
Forward current IF (mA)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
Center of optical axis
Distance d (mm)
Response Time Measurement
Circuit
Input
Center of optical axis
Output
90 %
10 %
Input
Output
Distance d (mm)
Photomicrosensor (Transmissive) EE-SV3
Series
225
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Complete “Terms and Conditions of Sale” for product purchase and use are on Omron’s website
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ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.
To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527.
OMRON ELECTRONIC
COMPONENTS LLC
55 E. Commerce Drive, Suite B
Schaumburg, IL 60173
847-882-2288
Cat. No. JB301-E3-01
3/05
OMRON CANADA, INC.
OMRON ON-LINE
885 Milner Avenue
Toronto, Ontario M1B 5V8
Global - http://www.omron.com
USA - http://www.components.omron.com
Canada - http://www.omron.ca
416-286-6465
Specifications subject to change without notice
Printed in USA