Excelics EFA720A DATA SHEET Low Distortion GaAs Power FET • • • • • • +35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 7200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 120mA PER BIN RANGE ' ELECTRICAL CHARACTERISTICS (Ta = 25 C) P1dB G1dB PAE ' ' O SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f= 2GHz 6 * 6 * 6 * 6 Chip Thickness: 50 ± 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns MIN TYP 33.5 35.5 35.5 17.5 12.5 16.0 MAX UNIT dBm dB % 36 Idss Saturated Drain Current Vds=3V, Vgs=0V 1200 2040 Gm Transconductance Vds=3V, Vgs=0V 840 1100 Vp Pinch-off Voltage Vds=3V, Ids=20mA BVgd Drain Breakdown Voltage Igd=7.2mA -12 -15 V BVgs Source Breakdown Voltage Igs=7.2mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) -2.0 2640 mS -3.5 6 O MAXIMUM RATINGS AT 25 C SYMBOLS PARAMETERS ABSOLUTE 1 mA CONTINUOUS2 Drain-Source Voltage 12V 8V Gate-Source Voltage -8V -4V Drain Current Idss 2.4A Ids Forward Gate Current 180mA 30mA Igsf Input Power 34dBm @3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 23 W 19 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Vds Vgs Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com V o C/W EFA720A DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: --- S11 --MAG ANG 0.954 -139.8 0.950 -160.3 0.949 -168.0 0.949 -172.3 0.949 -175.1 0.949 -177.3 0.950 -179.1 0.950 179.4 0.951 178.1 0.951 176.9 0.952 175.7 0.953 174.7 0.953 173.6 0.954 172.7 0.955 171.7 0.956 170.7 0.957 169.8 0.957 168.9 0.958 168.0 0.959 167.1 8V, 1/2 Idss --- S21 --MAG ANG 7.651 105.9 4.004 92.2 2.694 84.8 2.027 79.1 1.624 74.1 1.354 69.5 1.161 65.2 1.016 61.0 0.903 57.0 0.812 53.1 0.737 49.3 0.675 45.6 0.621 42.0 0.575 38.5 0.535 35.1 0.499 31.8 0.468 28.6 0.439 25.5 0.413 22.6 0.389 19.7 --- S12 --MAG ANG 0.018 25.1 0.019 20.5 0.020 22.1 0.020 25.1 0.021 28.5 0.022 32.1 0.023 35.5 0.024 38.8 0.025 41.8 0.026 44.6 0.028 47.2 0.029 49.5 0.031 51.6 0.033 53.5 0.034 55.2 0.036 56.7 0.038 58.0 0.040 59.1 0.042 60.1 0.044 61.0 --- S22 --MAG ANG 0.664 -173.7 0.680 -176.3 0.685 -177.2 0.689 -177.6 0.692 -177.7 0.696 -177.8 0.700 -177.8 0.704 -177.9 0.709 -177.9 0.715 -178.0 0.720 -178.1 0.726 -178.2 0.733 -178.4 0.739 -178.6 0.746 -178.8 0.753 -179.0 0.760 -179.3 0.767 -179.6 0.774 -180.0 0.782 179.6 The data included 0.7 mils diameter Au bonding wires: 3 gate wires, 20 mils each; 3 drain wires, 12 mils each; 8 source wires, 7 mils each.