Z ibo Seno Electronic Engineering Co., Ltd. EGP20A – EGP20M 2.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! ! ! ! ! Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.40 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version D DO-15 Dim Min Max A 25.4 — B 5.50 7.62 C 0.71 0.864 D 2.60 3.60 All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 55°C Symbol EGP 20A EGP 20B EGP 20D EGP 20F EGP 20G EGP 20J EGP 20K EGP 20M Unit VRRM VRWM VR 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Forward Voltage @IF = 2.0A VFM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage 1.0 1.3 1.7 5.0 100 V µA Reverse Recovery Time (Note 2) trr 50 75 nS Typical Junction Capacitance (Note 3) Cj 60 40 pF Operating Temperature Range Tj -65 to +150 °C TSTG -65 to +150 °C Storage Temperature Range *Glass passivated forms are available upon request Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. EGP20A – EGP20M 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. EGP20A – EGP20M 2.5 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0 25 75 50 100 125 150 175 10 EGP20A-EGP20F EGP20G 2.0 EGP20J-EGP20M 1.0 Tj = 25°C Pulse width = 300µs 0.01 0.6 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 60 100 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 1.0 0.8 40 20 0 Tj = 25°C f = 1.0MHz EGP20A-EGP20G 10 EGP20J-EGP20M 1 1 10 100 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit EGP20A – EGP20M 2 of 2 www.senocn.com Alldatasheet