Excelics EIA/EIB1818-2P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 2W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1818-2P SYMBOLS PARAMETERS/TEST CONDITIONS P1dB MIN TYP Output Power at 1dB Compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) 32.0 G1dB Gain at 1dB Compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) 5.5 PAE Power Added Efficiency at 1dB compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Id1dB Drain Current at 1dB Compression EIB1818-2P MAX MAX UNIT MIN TYP 33.0 32.0 32.5 dBm 6.0 4.5 5.0 dB 25 20 % 880 850 mA 40 46* dBm rd IP3 Output 3 Order Intercept Point f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Idss Saturated Drain Current Vds=3V, Vgs=0V Gm Transconductance Vds=3V, Vgs=0V Vp Pinch-off Voltage Vds=3V, Ids=12mA BVgd Drain Breakdown Voltage Igd=4.8mA Rth Thermal Resistance (Au-Sn Eutectic Attach) 1100 1440 1700 1100 1360 1500 -1.0 -13 1700 700 -2.5 -2.0 -15 -15 8 8 mS -3.5 *Typical –45dBc IM3 at Pout=23dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss Idss Igsf Forward Gate Current 180mA 30mA Pin Input Power 32dBm @ 3dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature -65/175oC -65/150oC Total Power Dissipation 17W 14.2W Pt mA Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com V V o C/W