Single P-channel MOSFET ELM34403AA-N ■General description ■Features ELM34403AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-55V Id=-4.5A Rds(on) < 80mΩ (Vgs=-10V) Rds(on) < 150mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -55 V Gate-source voltage Vgs ±20 -4.5 V Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg A -3.5 -20 A 2.5 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. Max. 50 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 SOURCE GATE 5 6 DRAIN DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM34403AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-36V,Vgs=0V,Ta=125°C -10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max. body-diode continuous current -55 Vds=-44V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -1.0 -20 -1.5 μA ±250 nA -2.5 V A Vgs=-10V, Id=-4.5A 60 80 mΩ Vgs=-4.5V, Id=-3.5A 90 150 mΩ Vds=-10V, Id=-4.5A Is=If, Vgs=0V 9 -1 S V Is -1.3 A Ism -2.6 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=0V, Vds=-30V, f=1MHz Vgs=-10V, Vds=-27.5V Id=-4.5A Vgs=-10V, Vds=-20V td(off) Id=-1A, Rgen=6Ω 1 1 3 pF 90 40 pF pF 15.0 2.5 nC nC 2 2 3.0 7 14 nC ns 2 2 10 20 ns 2 19 34 ns 2 22 ns ns 2 tf trr If=-3.5A, dIf/dt=100A/μs 12 15.5 Body diode reverse recovery charge Qrr If=-3.5A, dIf/dt=100A/μs 7.9 4-2 1 760 Turn-off fall time Body diode reverse recovery time NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 1 nC NIKO-SEM P8006EVG P-Channel Level MOSFET Enhancement SingleLogic P-channel SOP-8 Lead-Free Mode Field Effect Transistor ELM34403AA-N ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 -Is - Reverse Drain Current(A) V GS = 0V 10 1 T A = 125° C 0.1 25° C -55° C 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 4-3 SEP-30-2004 NIKO-SEM P-Channel Logic Level Enhancement Single P-channel MOSFET Mode Field Effect Transistor ELM34403AA-N 4-4 P8006EVG SOP-8 Lead-Free