EM620FV16B Series Low Power, 128Kx16 SRAM Document Title 128K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft June 7, 2007 0.1 0.1 Revision Remove BYTE option information June 15, 2007 0.2 0.2 Revision Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns), tOE-55(30ns to 25ns), tWP-55(45ns to 40ns), tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns), ICC(2mA to 3mA), ICC1(2mA to 3mA) July 2, 2007 0.3 0.3 Revision VIH level change from 2.0V to 2.2V Aug. 16, 2007 Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Remark Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 EM620FV16B Series Low Power, 128Kx16 SRAM 128K x16 Bit Low Power and Low Voltage CMOS Static RAM FEATURES - Process Technology : 0.15µm Full CMOS - Organization :128K x16 - Power Supply Voltage => EM620FV16B : 2.7~3.6V - Low Data Retention Voltage : 1.5V - Three state output and TTL Compatible - Packaged product designed for 45/55/70ns 29 56 EM620FV16B (Dual C/S) + GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bare silicon - Typical Die Thickness = 725um +/-15um - Typical top-level metallization : => Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms - Topside Passivation : => Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms - Wafer diameter : 8 inch (0.0) EMLSI LOGO 1 OPTIONS - C1/W1 : DC Probed Die/Wafer @ Hot Temp - C2/W2 : DC/AC Probed Die/Wafer @ Hot Temp 28 y x Pre-charge Circuit A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 Name Function Name Function CS1,CS2 Chip select inputs Vcc Power Supply OE Output Enable input Vss Ground Row Select PAD DESCRIPTIONS VCC I/O0 ~ I/O7 I/O8 ~ I/O15 WE Write Enable input UB Upper Byte (I/O8~15) A0~A16 Address Inputs LB Lower Byte (I/O0~7) I/O0~I/O15 Data Inputs/Outputs NC No Connection Data Cont Data Cont VSS Memory Array 1024 x 2048 I/O Circuit Column Select A10 A11 A12 A13 A14 A15 A16 WE OE UB LB CS1 CS2 Control Logic BONDING INSTRUCTIONS The 2M full CMOS SRAM die has total 56pads. Refer to the bond pad location and identification table for X, Y coordinates. EMLSI recommends using a bond wire on back side of die onto Vss bond pad for improved noise immunity. 2 EM620FV16B Series Low Power, 128Kx16 SRAM FUNCTIONAL SPECIFICATIONS There are 3 classifications for EMLSI die and wafers products, which are C1 and C2 for die and W1 and W2 for wafer, respectively. Each die and wafer support dedicated characteristics and probe the electrical parameters within their specifications. Followings are brief information for die and wafer classifications. Please refer to packaged specifications for more information but these parameters are not guaranteed at bare die and wafer. − C1 LEVEL DIE OR W1 LEVEL WAFER The DC parameters are measured by specification for C1 level die or W1 level wafer. The DC parameters measured at 70°C temperature, which called ‘Hot DC Sorting’ Other parameters are not guaranteed and warranted including device reliability. Please refer to qualification report for device reliability and package level datasheets for electrical parameters. − C2 LEVEL DIE OR W2 LEVEL WAFER The DC parameters and selected AC parameters are measured with for C2 level die or W2 level wafer. The DC characteristics of C2 die and W2 wafer is tested based on DC specifications of C1 level die and W1 level wafer. The DC and specified AC parameters are tested at 70°C temperature, which called ‘Hot DC & Selective AC Sorting’. Other parameters are not guaranteed and warranted including device reliability. Please refer to qualification report for device reliability and package level datasheets for electrical parameters. C2 level die and W2 level wafer probe following AC parameter. − tRC, tAA, tCO − tWC, tCW PACKAGING Individual device will be packed in anti-static trays. − Chip Trays : A 2-inch square waffle style carrier for die with separate compartments for each die. Commonly referred to as a waffle pack, each tray has a cavity size selected for the device that allows for easy loading and unloading and prevents rotation. The tray itself is made of conductive material to reduce the danger of damage to the die from electrostatic discharge. The chip carriers will be labeled with the following information : − EMLSI wafer lot number − EMLSI part number − Quantity − Jar Packing : Jar packing is made by EMLSI and used by many customers that we deliver the requested die as wafer. The pack is consisted of clean paper to wrap the wafer, high cushioned sponge between wafers and hardly fragile plastic box with sponge. Each pack has typically 24 wafers and then several packs are put into larger box depending on amounts of wafers. Bond Pad #1 at Top Die orientation in chip carriers STORAGE AND HANDLING EMLSI recommends the die stored in a controlled environment with filtered nitrogen. The carrier must be opened at ESD safe environment when inspection and assembly. 3 EM620FV16B Series Low Power, 128Kx16 SRAM ABSOLUTE MAXIMUM RATINGS * Parameter Symbol Voltage on Any Pin Relative to Vss Minimum Unit VIN, VOUT -0.2 to 4.0V V Voltage on Vcc supply relative to Vss VCC -0.2 to 4.0V V Power Dissipation PD 1.0 W Operating Temperature TA -40 to 85 o C * Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper- ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. FUNCTIONAL DESCRIPTION CS1 CS2 OE WE LB UB I/O0-7 I/O8-15 Mode Power H X X X X X High-Z High-Z Deselected Stand by X L X X X X High-Z High-Z Deselected Stand by X X X X H H High-Z High-Z Deselected Stand by L H H H L X High-Z High-Z Output Disabled Active L H H H X L High-Z High-Z Output Disabled Active L H L H L H Data Out High-Z Lower Byte Read Active L H L H H L High-Z Data Out Upper Byte Read Active L H L H L L Data Out Data Out Word Read Active L H X L L H Data In High-Z Lower Byte Write Active L H X L H L High-Z Data In Upper Byte Write Active L H X L L L Data In Data In Word Write Active Note: X means don’t care. (Must be low or high state) 4 EM620FV16B Series Low Power, 128Kx16 SRAM RECOMMENDED DC OPERATING CONDITIONS 1) Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.3 3.6 V Ground VSS 0 0 0 V Input high voltage VIH 2.2 - VCC + 0.22) V Input low voltage VIL -0.23) - 0.6 V 1. 2. 3. 4. TA= -40 to 85oC, otherwise specified Overshoot: VCC +2.0 V in case of pulse width < 20ns Undershoot: -2.0 V in case of pulse width < 20ns Overshoot and undershoot are sampled, not 100% tested. CAPACITANCE1) (f =1MHz, TA=25oC) Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Ouput capacitance CIO VIO=0V - 10 pF 1. Capacitance is sampled, not 100% tested DC AND OPERATING CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=VSS to VCC -1 - 1 uA Output leakage current ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH VIO=VSS to VCC -1 - 1 uA Operating power supply ICC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL - - 3 mA ICC1 Cycle time=1µs, 100% duty, IIO=0mA, CS1<0.2V, LB<0.2V or/and UB<0.2V, CS2>VCC-0.2V, VIN<0.2V or VIN>VCC-0.2V - - 3 mA 45ns - - 35 ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL , VIN=VIL or VIH 55ns - - 30 70ns - - 25 Average operating current mA Output low voltage VOL IOL = 2.1mA - - 0.4 V Output high voltage VOH IOH = -1.0mA 2.4 - - V Standby Current (TTL) ISB - - 0.3 mA - 11) 10 uA Standby Current (CMOS) ISB1 CS1=VIH, CS2=VIL, Other inputs=VIH or VIL CS1>VCC-0.2V, CS2>VCC-0.2V (CS1 controlled) or 0V<CS2<0.2V (CS2 controlled), Other inputs = 0~VCC (Typ. condition : VCC=3.3V @ 25oC) (Max. condition : VCC=3.6V @ 85oC) NOTES 1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested. 5 LF EM620FV16B Series Low Power, 128Kx16 SRAM AC OPERATING CONDITIONS VTM3) Test Conditions (Test Load and Test Input/Output Reference) R12) Input Pulse Level : 0.4 to 2.2V Input Rise and Fall Time : 5ns Input and Output reference Voltage : 1.5V Output Load (See right) : CL1) = 100pF + 1 TTL CL1) = 30pF + 1 TTL (only 45ns part) 1. Including scope and Jig capacitance 2. R1=3070 ohm, R2=3150 ohm 3. VTM=2.8V R22) CL1) READ CYCLE (Vcc =3.0 to 3.6V, Gnd = 0V, TA = -40oC to +85oC) Parameter Symbol 45ns 55ns 70ns Min Max Min Max Min Max Unit Read cycle time tRC 45 - 55 - 70 - ns Address access time tAA - 45 - 55 - 70 ns Chip select to output tCO1, tCO2 - 45 - 55 - 70 ns Output enable to valid output tOE - 25 - 25 - 35 ns UB, LB access time tBA 70 ns Chip select to low-Z output 45 55 tLZ1, tLZ2 10 - 10 - 10 - ns UB, LB enable to low-Z output tBLZ 5 - 10 - 10 - ns Output enable to low-Z output tOLZ 5 - 5 - 5 - ns tHZ1, tHZ2 0 20 0 20 0 25 ns UB, LB disable to high-Z output tBHZ 0 15 0 20 0 25 ns Output disable to high-Z output tOHZ 0 15 0 20 0 25 ns Output hold from address change tOH 10 - 10 - 10 - ns Chip disable to high-Z output WRITE CYCLE (Vcc =3.0 to 3.6V, Gnd = 0V, TA = -40oC to +85oC) Parameter Symbol 45ns 55ns 70ns Unit Min Max Min Max Min Max tWC 45 - 55 - 70 - ns tCW1, tCW2 45 - 45 - 60 - ns Address setup time tAS 0 - 0 - 0 - ns Address valid to end of write tAW 45 - 45 - 60 - ns UB, LB valid to end of write tBW 45 - 45 - 60 - ns Write pulse width tWP 35 - 40 - 50 - ns Write recovery time tWR 0 - 0 - 0 - ns Write to ouput high-Z tWHZ 0 15 0 20 0 20 ns Data to write time overlap tDW 25 Data hold from write time tDH 0 - 0 - 0 - ns End write to output low-Z tOW 5 - 5 - 5 - ns Write cycle time Chip select to end of write 6 25 30 ns EM620FV16B Series Low Power, 128Kx16 SRAM TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL) tRC Address tAA tOH Data Out Data Valid Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH) tRC Address tAA tOH tCO CS1 CS2 tHZ tBA UB,LB tBHZ tOE OE Data Out High-Z tOHZ tOLZ Data Valid tBLZ tWHZ tLZ NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. 7 EM620FV16B Series Low Power, 128Kx16 SRAM TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED) tWC Address tCW(2) tWR(4) CS1 CS2 tAW tBW UB,LB tWP(1) WE tAS(3) Data in tDH tDW High-Z High-Z Data Valid tWHZ Data out tOW Data Undefined TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 CONTROLLED) tWC Address tAS(3) tCW(2) tWR(4) CS1 CS2 tAW tBW UB,LB tWP(1) WE tDW Data in Data out Data Valid High-Z High-Z 8 tDH EM620FV16B Series Low Power, 128Kx16 SRAM TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 CONTROLLED) tWC Address tCW(2) tWR(4) CS1 tAS(3) CS2 tAW tWP(1) WE tDW Data in Data out tDH Data Valid High-Z High-Z TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED) tWC Address tCW(2) tWR(4) CS1 CS2 tAW tBW UB,LB tWP(1) tAS(3) WE tDW Data in Data out tDH Data Valid High-Z High-Z NOTES (WRITE CYCLE) 1. A write occurs during the overlap(tWP) of low CS1 a high CS2 and low WE. A write begins at the lastest transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition when CS1 goes high, CS2 goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the CS1 going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS1 or WE going high. 9 EM620FV16B Series Low Power, 128Kx16 SRAM DATA RETENTION CHARACTERISTICS Parameter Symbol VCC for Data Retention VDR Data Retention Current IDR Chip Deselect to Data Retention Time tSDR Operation Recovery Time tRDR Test Condition ISB1 Test Condition (Chip Disabled) 1) VCC=1.5V, ISB1 Test Condition (Chip Disabled) 1) See data retention wave form Min Typ2) Max Unit 1.5 - 3.6 V - 0.5 - µA 0 - - tRC - - NOTES 1. See the ISB1 measurement condition of data sheet page 5. 2. Typical value is measured at TA=25oC and not 100% tested. DATA RETENTION WAVE FORM tSDR Data Retention Mode tRDR Vcc 3.0V 2.2V VDR CS1 > Vcc-0.2V CS1 GND Data Retention Mode Vcc 3.0V CS2 tRDR tSDR VDR 0.4V CS2 < 0.2V GND 10 ns EM620FV16B Series Low Power, 128Kx16 SRAM SRAM PART CODING SYSTEM EM X XX X X X XX X X - XX XX 1. EMLSI Memory 11. Power 2. Product Type 10. Speed 3. Density 4. Function 9. Package 5. Technology 8. Generation 6. Operating Voltage 7. Organization 1. Memory Component EM --------------------- Memory 7. Organization 8 ---------------------- x8 bit 16 ---------------------- x16 bit 2. Product Type 6 ------------------------ SRAM 8. Generation Blank ----------------- 1st generation A ----------------------- 2nd generation B ----------------------- 3rd generation C ----------------------- 4th generation D ----------------------- 5th generation E ----------------------- 6th generation F ----------------------- 7th generation G ---------------------- 8th generation 3. Density 1 ------------------------- 1M 2 ------------------------- 2M 4 ------------------------- 4M 8 ------------------------- 8M 4. Function 0 ----------------------- Dual CS 1 ----------------------- Single CS 2 ----------------------- Multiplexed 3 ------------- Single CS / LBB, UBB(tBA=tOE) 4 ------------- Single CS / LBB, UBB(tBA=tCO) 5 ------------- Dual CS / LBB, UBB(tBA=tOE) 6 ------------- Dual CS / LBB, UBB(tBA=tCO) 9. Package Blank ---------------- KGD, 48&36FpBGA S ---------------------- 32sTSOP1 T ---------------------- 32 TSOP1 U ---------------------- 44 TSOP2 10. Speed 45 ---------------------55 ---------------------70 ---------------------85 ---------------------10 ---------------------12 ---------------------- 5. Technology F ------------------------- Full CMOS 6. Operating Voltage T ------------------------- 5.0V V ------------------------- 3.3V U ------------------------- 3.0V S ------------------------- 2.5V R ------------------------- 2.0V P ------------------------- 1.8V 45ns 55ns 70ns 85ns 100ns 120ns 11. Power LL ---------------------- Low Low Power LF ---------------------- Low Low Power(Pb-Free & Green) L ---------------------- Low Power S ---------------------- Standard Power 11