EMLSI EM7643SU16HP-45LF 4m x 16bit asynchronous / page mode stram Datasheet

Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
Document Title
4M x 16Bit Asynchronous / Page Mode StRAM
Revision History
Revision No.
0.0
History
Draft Date
Initial Draft
Oct. 23 , 2007
Remark
Preliminary
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
Zip Code : 690-717
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to
your questions about device. If you have any questions, please contact the EMLSI office.
1
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
4M x16 Bit Async./Page StRAM
FEATURES
GENERAL DISCRIPTION
- Single power supply voltage of 2.6 to 3.3V
- Direct TTL compativility for all inputs and outputs.
- Deep power-down mode : Memory cell data invalid.
- Supplied in KGD(Known Good Die) form.
- Page operation mode
Page read operation by 8 words.
- Logic compatible with SRAM R/W pin.
- Standby Current
Standby 150 uA
Deep power-down standby 10uA
- Access Time
The EM7643SU16H is a 64M-bit StRAM organized as 4M
words by 16 bits. It provides high density, high speed and
low power. The device operates single power supply. The
device also features SRAM-like W/R timing whereby the
device is controlled by CE1, OE and WE on asynchronous. The device has the page access operation. Page
size is 8 words. The device also supports deep powerdown mode, realizing low-power standby.
Access Time
65ns
CE1 Access Time
65ns
OE Access Time
25ns
Page Access Time
20NS
PAD DESCRIPTION
SYMBOL
DESCRIPTION
A0~A21
Address input
A0~A2
Page Address input
CE1
Chip Enable Input1, Low : Enable
CE2
Chip Enable Input2, High:Enable,
Low:Enter Power Down mode
WE
Write Enable input, Low :Enable
OE
Output Enable input, Low :Enable
LB
Lower byte write control
UB
Upper byte write control
DQ0~DQ15
Data inputs/outputs
VDD
Device Power supply
VSS
VSS must be connected ground
VDDQ
I/O Power supply
VSSQ
VSS must be connected ground
NC
Not Connection
2
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
FUNCTION BLOCK DIAGRAM
VDD
GND
MEMORY CELL ARRAY
DATA OUTPUT
BUFFER
ROW ADDRESS DECODER
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
ROW ADDRESS BUFFER
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DATA INPUT
BUFFER
CE
DATA OUTPUT
BUFFER
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DATA INPUT
BUFFER
Sense AMP
COLUMN ADDRESS
DECODER
REFRESH
CONTROL
REFRESH
ADDRESS
COUNTER
COLUMN ADDRESS
BUFFER
A0 A1 A2 A3 A4 A5 A6 A7
CONTROL SIGNAL
GENERATOR
CE
WE
OE
UB
LB
CE1
CE
CE2
3
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
OPERATION MODE
CE1 CE2
OE
WE
LB
UB
Add DQ0 to DQ7 DQ8 to DQ15
L
H
L
H
L
L
X
Data Out
Data Out
L
H
L
H
L
H
X
Data Out
L
H
L
H
H
L
X
L
H
X
L
L
L
L
H
X
L
L
L
H
X
L
L
H
H
H
H
H
L
Mode
Power
Read(Word)
IDD0
High-Z
Read(Lower Byte)
IDD0
High-Z
Data Out
Read(Upper Byte)
IDD0
X
Data In
Data In
Write(Word)
IDD0
H
X
Data In
Invalid
Write(Lower Byte)
IDD0
H
L
X
Invalid
Data In
Write(Upper Byte)
IDD0
H
X
X
X
High-Z
High-Z
Outputs Disabled
IDD0
X
X
X
X
X
High-Z
High-Z
Standby
IDDS
X
X
X
X
X
High-Z
High-Z
Deep Power-down
Standby
IDDSD
Note: X means don’t care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS (SEE NOTE1)
SYMBOL
VDD
VIN
VOUT
Topr.
Tstrg.
PD
IOUT
RATING
Device Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Stroage Temperature
Power Dissipation
Short Circuit Output Current
VALUE
-1.0 to 3.6
-1.0 to 3.6
-1.0 to 3.6
-25 to 85
-55 to 150
0.6
50
UNIT
V
V
V
℃
℃
W
mA
DC RECOMMENDED OPERATING CONDITIONS(Ta = -25℃ to 85 ℃)
SYMBOL
PARAMETER
MIN
TYP
Max
VDD
Device Power Supply Voltage
2.6
2.75
3.3
VIH
Input High Voltage
0.8*VDD
-
VDD + 0.3
VIL
Input Low Voltage
-0.3
-
0.15*VDD
Unit
V
VIH(Max) VDD+1.0V with 10ns pulse width
VIL(Min)-1.0V with 10ns pulse width
4
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
DC CHARACTERISTICS(Ta = -25℃ to 85 ℃, VDD=2.6 to 3.3V) (SEE NOTE 3 to 4)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=0 to VDD
-1
-
1
uA
Output leakage current
ILO
Output disable, VOUT= 0V to VDD
-1
-
1
uA
Operating current
IDDO1
tRC= Min, CE1=VIL , CE2=VIH , IOUT=0mA
-
-
50
mA
Page Access Operating
current
IDDO2
tPC = Min, CE1=VIL, CE2=VIH , IOUT=0mA,
Page add. cycling.
-
-
25
mA
0.8*VDD
-
-
V
Output high voltage
VOH
IOH = -0.5mA
Output low voltage
VOL
IOL = 1.0mA, VCC=VCCmin
-
-
0.15*VCCQ
V
Standby Current (CMOS)
IDDS
CE1>VDD-0.2V, CE2=VDD -0.2V
-
-
150
uA
-
-
10
uA
Deep Power-down
Standby Curret
VDDSD
(*1, *2)
CE2 = 0.2V
Note
*1. Max VIL of signals(i.e. A0~A21, DQ1~DQ16, CE1#, CE2, WE#, OE#, LB#, UB#) can be 0.2V to 0.616V.
*2. For deep power-down, CE2<=0.2V is essential. If max VIL of CE2 is from 0.2V to 0.616V, the 10uA deep-power
current will not be guaranteed, and the deep-power current might go high as 20uA.
CAPACITANCE (f =1MHz, TA=25oC)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=VSS
-
10
pF
Ouput capacitance
COUT
VOUT=VSS
-
30
pF
Note : This parameter is sampled periodically and is not 100% tested
5
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
AC TEST CONDITIONS
PARAMETER
CONDITION
Output load
50 ohm+0.5 * VDD
Input pulse level
VDD-0.2V, 0.2V
Timing measurements
VDD * 0.5
Reference level
VDD * 0.5
tR, tF
5 ns
AC CHARACTERISTICS (Vcc = 2.6 to 3.3V, Gnd = 0V, TA = -25oC to +85oC) (SEE NOTE 5-11)
Speed
Parameter List
Symbol
Min
65
Max
10000
Unit
tRC
Read Cycle Time
ns
tACC
Address Access Time
-
65
ns
tCO
Chip Enable(CE1) Access Time
-
65
ns
tOE
Output Enable Access Time
-
25
ns
tBA
Data Byte Control Access Time
-
65
ns
tCOE
Chip Enable Low to Output Active
10
-
ns
tOEE
Output Enable Low to Output Active
0
-
ns
tBE
Data Byte Control Low to Output Active
0
-
ns
tOD
Chip Enable High to Ouput High-Z
-
20
ns
Output Enable High to Output High-Z
-
20
ns
tBD
Data Byte Control High to Output High-Z
-
20
ns
tOH
Output Data Hold Time
5
-
ns
tPM
Page Mode Time
65
10000
ns
tPC
Page Mode Cycle Time
20
-
ns
tODO
tAA
Page Mode Address Access Time
-
20
ns
tAOH
Page Mode Output Data Hold Time
5
-
ns
tWC
Write Cycle Time
65
10000
ns
tWP
Write Pulse Width
50
-
ns
tCW
Chip Enable to End of Write
65
-
ns
tBW
Data Byte Control to End of Write
60
-
ns
tAW
Address Valid to End of Write
60
-
ns
tAS
Address Set-up Time
0
-
ns
tWR
Write Recovery Time
0
-
ns
tCEH
Chip Enable High Pulse Width
10
-
ns
tWEH
Write Enable High Pulse Width
6
-
ns
tODW
WE Low to Output High-Z
-
20
ns
tOEW
WE High to Output Active
0
-
ns
tDS
Data Set-up Time
30
-
ns
tDH
Data Hold Time
0
-
ns
tCS
CE2 Set-up Time
0
-
ns
tCH
CE2 Hold Time
300
-
us
tDPD
CE2 Pulse Width
10
-
ms
tCHC
CE2 Hold from CE1
0
-
ns
tCHP
CE2 Hold from Power On
30
-
us
6
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
TIMING WAVEFORM OF READ CYCLE
tRC
Address
A0 to A21
tOH
tACC
tCO
CE1
CE2
tOD
OE
tODO
WE
UB, LB
Dout
DQ0 ~ DQ15
tOEE
tBE
tBD
Valid Data
High-Z
High-Z
tCOE
TIMING WAVEFORM OF PAGE READ CYCLE (8 words access)
tPM
Address
A0 to A2
tRC
tPC
tPC
Address
A3 to A21
CE1
CE2
tOE
OE
WE
tBA
UB, LB
Dout
DQ0 ~ DQ15
tOEE
tBE
High-Z
tCOE
tACC
tAOH
Dout
tAA
tACC
tAOH
Dout
tAOH
Dout
tAA
tOD
tBD
Dout
High-Z
tOH
tODO
7
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
TIMING WAVEFORM OF WRITE CYCLE1 (WE CONTROLLED) (SEE NOTE 8)
tWC
Address
A0 to A21
tAW
tWEH
tWP
WE
tAS
tCW
tWR
CE1
tCH
CE2
tBW
tWR
UB, LB
tODW
Dout
DQ0 ~ DQ15
tOEW
High - Z
(See Note 10)
tDS
Din
DQ0 ~ DQ15
(See Note11)
tDH
Valid Data
(See Note 9)
(See Note 9)
TIMING WAVEFORM OF WRITE CYCLE 2 (CE CONTROLLED) (SEE NOTE 8)
tWC
Address
A0 to A21
tAW
tWR
tWP
WE
tCW
CE1
tCH
tWR
tCEH
tAS
CE2
tBW
tWR
UB, LB
tODW
Dout
DQ0 ~ DQ15
High - Z
High - Z
tBE
tDS
tCOE
Din
DQ0 ~ DQ15
tDH
Valid Data
(See Note9)
8
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
DEEP POWER-DOWN TIMING
CE1
tDPD
CE2
tCS
tCH
POWER_ON TIMING
VDD
VDD min
CE1
tCHC
CE2
tCHP
tCH
PROVISIONS OF ADDRESS SKEW
Read
In case, multiple invalid address cycles shorter than tRC_min sustain over 10us in a active status, as least one valid address cycle over
tRC_min must be needed during 10us.
over 10 us
CE1
WE
Address
tRCmin
Write
In case, multiple invalid address cycles shorter than tWC_min sustain over 10us in a active status, as least one valid address cycle over
tRC_min with tWP_min must be needed during 10us.
over 10 us
CE1
tWPmin
WE
Address
tWCmin
9
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
Notes :
1. Stresses greater than listed under “Absolute Maximum Ratings” may cause permanet damage to the device.
2. All voltages are reference to VSS.
3. IDD0 depends on the cycle time.
4. IDD0 depends on output loading. Specified values are defined with the output open condition.
5. AC measurement are assumed tR, tF = 5ns.
6. Parameters tOD, tODO, tBD and tODW define the time at which the output goes the open condition and are not
output voltage reference levels
7. Data cannot be retained at deep power-down stand-by mode.
8. If OE is high during the write cycle, the outputs will remain at high impedence.
9. During the output state of DQ signals, input signals of reverse polarity must not be applied.
10. If CE1 or LB / UB goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedence.
11. If CE1 or LB./UB goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high impedence.
10
Rev. 0.0
Preliminary
EM7643SU16H
4Mx16 Async. / Page StRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X X - XX XX
1. EMLSI Memory
12. Power
2. Device Type
11. Speed
3. Density
10. PKG
9. Option
4. Function
8. Version
5. Technology
7. Organization
6. Operating Voltage
8. Version
Blank ----------------- Mother die
A ----------------------- 2’nd generation
B ----------------------- 3’rd generation
C ----------------------- 4’th generation
D ----------------------- 5’th generation
1. Memory Component
2. Device Type
6 ---------------------- Low Power SRAM
7 ---------------------- STRAM
C ---------------------- CellularRAM
9. Option
Blank ---- No optional mode
H ----------- Demultiplexed with DPD
J ------------ Demultiplexed with DPD & RBC
K ------------ Multiplexed with RBC
L ------------ Multiplexed with DPD & RBC
3. Density
4 ----------------------- 4M
8 ----------------------- 8M
16 --------------------- 16M
32 --------------------- 32M
64 --------------------- 64M
28 --------------------- 128M
4. Function
2 ----Multiplexed async.
3-----Demultiplexed async. with page mode
4-----Demultiplexed async. with direct DPD
5-----Multiplexed sync.
6-----Optional mux/demuxed sync.
5. Technology
S ----------------------- Single Transistor & Trench Cell
10. Package
Blank ---------------------- Wafer
S
---------------------- 32 sTSOP1
T
---------------------- 32 TSOP1
U
---------------------- 44 TSOP2
P
---------------------- 48 FPBGA
Z
---------------------- 52 FPBGA
Y
---------------------- 54 FPBGA
V
---------------------- 90 FPBGA
11. Speed (@async.)
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
90 ---------------------- 90ns
10 --------------------- 100ns
12 --------------------- 120ns
6. Operating Voltage
V ----------------------- 3.3V
U ----------------------- 3.0V
S ----------------------- 2.5V
R ----------------------- 2.0V
P ----------------------- 1.8V
L ----------------------- 1.5V
7. Organization
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
12. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power
(Pb-Free&Green)
L ---------------------- Low Power
11
Rev. 0.0
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